SMALL SIGNAL SWITCHING DIODES 1N4448 Features * Silicon epitaxial planar diode DO-35(GLASS) * Fast switching diodes * 500mW power dissipation 0.075(1.9) MAX. DIA. * This diode is also available in the Mini-MELF case with the type designation LL4448 1.083(27.5) MIN. 0.154(3.9) MAX. Mechanical Data 1.083(27.5) MIN. 0.020(0.52) MAX. DIA. * Case: DO-35 glass case * Weight: Approx. 0.13 gram Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics (Ratings at 25 ambient temperature unless otherwise specified) Symbol VR VRM Reverse Voltage Peak Reverse Voltage Average rectified current, Half wave rectification with Resistive load at TA=25 and F50Hz IAV Surge forward current at t<1S and TJ=25 Power dissipation at TA=25 Junction temperature Value Units 75 Volts 100 Volts 1501) mA IFSM Ptot 500 mA 5001) mW TJ 175 Storage temperature range TSTG 1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35) -65 to +175 Electrical characteristics (Ratings at 25 ambient temperature unless otherwise specified) Forward voltage Leakage current at IF=5mA at IF=10mA at VR=20V at VR=75V at VR=20V, TJ=150 Junction Capacitance at VR=VF=0V Reverse breakdown voltage tested with 100A Pulse Reverse Recovery time from IF=10mA to IR=1mA, VR=6V, RL=100 Thermal resistance, junction to Ambient Rectification efficiency at f=100MHz, VRF=2V Symbols VF VF IR IR IR CJ V(BR)R Min. Typ. Max. Units 0.72 1 25 5 50 V V nA A A 4 pF 100 V trr 4 ns RJA 3501) K/W 0.45 1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35) RATINGS AND CHARACTERISTIC CURVES 1N4448 FIG.2- DYNAMIC FORWARD RESISTANCE VERSUS FORWARD CURRENT FIG.1-FORWARD CHARACTERISTICS mA 103 104 TJ= 25 f=1KHz 102 103 IF TJ=100 rF TJ=25 10 102 1 10 10-1 10-2 0 1 1 2V 10-2 10-1 1 VF 102 10 mA IF FIG.3-ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE FIG. 4-RELATIVE CAPACITANCE VERSUS VOLTAGE mW 1000 900 1.1 TJ= 25 f=1MHz 800 700 Ptot Ctot(VR) Ctot(OV) 600 500 1.0 0.9 400 300 0.8 200 100 0.7 0 0 200 100 TA 0 2 4 6 8 VR 10V RATINGS AND CHARACTERISTIC CURVES 1N4448 FIG.5 - RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT FIG.6 - LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE nA 104 D.U.T. 103 60 2nF VRF=2V 5K VO 102 10 VR= 50V 1 0 200 100 FIG.7 - ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION A 100 V=tp/T IFRM n=0 IFRM tp 10 T=1/fp 0.1 T 0.2 0.5 1 0.1 10-5 10-4 10-3 10-2 10-1 tp 1 10S