1N4448
SMALL SIGNAL
SWITCHING DIODES
Features
Mechanical Data
· Silicon epitaxial planar diode
· Fast switching diodes
· 500mW power dissipation
· This diode is also available in the Mini-MELF case with
the type designation LL4448
· Case: DO-35 glass case
· Weight: Approx. 0.13 gram
Maximum Ratings And Electrical Characteristics
Electrical characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified)
(Ratings at 25℃ ambient temperature unless otherwise specified)
Symbol Value Units
Average rectified current, Half wave rectification with
Resistive load at T
A
=25℃ and F≥50Hz mA150
1)
Surge forward current at t<1S and T
J
=25℃
℃
-65 to +175
Storage temperature range
℃
Reverse Voltage Volts75
V
R
I
AV
I
FSM 500
T
STG
Junction temperature
T
J175
mA
1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Peak Reverse Voltage Volts100
V
RM
Power dissipation at T
A
=25℃mW
500
1)
Ptot
Symbols Units
Leakage current at V
R
=20V
at V
R
=75V
at V
R
=20V, T
J
=150℃
nA
μA
μA
Junction Capacitance at V
R
=V
F
=0V
I
R
I
R
I
R
C
J
Min.
Thermal resistance, junction to Ambient
Typ. Max.
25
5
50
4
350
1)
K/W
Forward voltage at I
F
=5mA
at I
F
=10mA
V
V
0.72
1
V
F
V
F
Rθ
JA
pF
Reverse Recovery time from I
F
=10mA to I
R
=1mA,
V
R
=6V, R
L
=100Ω4 ns
trr
1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Reverse breakdown voltage tested with 100μA Pulse V100
V
(BR)R
Rectification efficiency at f=100MHz, V
RF
=2V 0.45
η
Dimensions in inches and (millimeters)
DO-35(GLASS)
1.083(27.5)
MIN.
1.083(27.5)
MIN.
0.154(3.9)
MAX.
0.020(0.52)
MAX.
DIA.
0.075(1.9)
MAX.
DIA.
FIG.1-FORWARD CHARACTERISTICS
TJ=25℃
TJ=100℃
10 2V
IF
VF
mA
1
10-
1
10-
2
10
2
10
3
10
FIG.2- DYNAMIC FORWARD RESISTANCE
VERSUS FORWARD CURRENT
r
F
IF
T
J
= 25
℃
f=1KHz
110-1
10-2 102
10
103
1
102
104
10
mA
FIG.3-ADMISSIBLE POWER DISSIPATION
VERSUS AMBIENT TEMPERATURE
1000 200 ℃
TA
Ptot
0
100
300
200
1000
900
800
700
600
500
400
mW
FIG. 4-RELATIVE CAPACITANCE VERSUS
VOLTAGE
T
J
= 25
℃
f=1MHz
20 10V864
0.7
0.8
1.0
0.9
1.1
VR
Ctot(VR)
Ctot(OV)
RATINGS AND CHARACTERISTIC CURVES 1N4448
Ω
FIG.5 - RECTIFICATION EFFICIENCY MEASUREMENT
CIRCUIT
VO
5K
2nF
VRF=2V
D.U.T.
60
FIG.6 - LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATURE
1000 200 ℃
nA
10
3
1
10
2
10
4
10
V
R
= 50V
FIG.7 - ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
tp
110-
1
10-
2
10S10-3
10-5 10-4
0.1
1
100
10
IFRM
A
V=tp/T T=1/fp
tp IFRM
T
n=0
0.1
0.5
0.2
RATINGS AND CHARACTERISTIC CURVES 1N4448
Ω
Ω
