BPV23F, BPV23FL www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES * Package type: leaded * Package form: side view * Dimensions (in mm): 4.5 x 5 x 6 * Radiant sensitive area (in mm2): 4.4 * High radiant sensitivity * Daylight blocking filter matched with 940 nm emitters * Fast response times 94 8633 * Angle of half sensitivity: = 60 * Compliant to PoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note ** Please see document "Vishay Material Category Policy": www.vishay.com/doc?99902 DESCRIPTION BPV23F is a PIN photodiode with high speed and high radiant sensitivity in a black, plastic package with side view lens and daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. The lens achieves 80 % of sensitivity improvement in comparison with flat package. BPV23FL has long leads, other specifications like BPV23F. APPLICATIONS * High speed detector for infrared radiation * Infrared remote control and free air data transmission systems, e.g. in combination with TSALxxxx series IR emitters PRODUCT SUMMARY Ira (A) (deg) 0.5 (nm) BPV23F 63 60 870 to 1050 BPV23FL 63 60 870 to 1050 PACKAGE FORM COMPONENT ORDERING INFORMATION PACKAGING REMARKS BPV23F Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view BPV23FL Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view, long leads ORDERING CODE ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb 25 C Junction temperature Operating temperature range Thermal resistance junction/ambient Rev. 1.8, 24-Aug-11 VALUE VR 60 UNIT V PV 215 mW Tj 100 C Tamb - 40 to + 100 C C Tstg - 40 to + 100 t5s Tsd 260 C Connected with Cu wire, 0.14 mm2 RthJA 350 K/W Storage temperature range Soldering temperature SYMBOL Document Number: 81510 1 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPV23F, BPV23FL www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) TEST CONDITION SYMBOL IF = 50 mA VF IR = 100 A, E = 0 V(BR) VR = 10 V, E = 0 Iro VR = 0 V, f = 1 MHz, E = 0 CD 48 VR= 12 V, f = 1 MHz RS 900 Open circuit voltage Ee = 1 mW/cm2, = 950 nm Vo 390 mV Temperature coefficient of Vo Ee = 1 mW/cm2, = 950 nm TKVo - 2.6 mV/K Short circuit current Ee = 1 mW/cm2, = 950 nm Ik 60 A Reverse light current Ee = 1 mW/cm2, = 950 nm, VR = 5 V Ira 63 A TKIra 0.2 %/K VR = 5 V, = 870 nm s() 0.35 A/W VR = 5 V, = 950 nm s() 0.6 A/W Angle of half sensitivity 60 deg Wavelength of peak sensitivity p 950 nm 0.5 870 to 1050 nm = 950 nm 90 % VR = 10 V, = 950 nm NEP 4 x 10-14 W/ Hz PARAMETER Forward voltage Breakdown voltage Reverse dark current Diode capacitance Serial resistance Ee = 1 Temperature coefficient of Ira Absolute spectral sensitivity = 950 nm, VR = 10 V mW/cm2, Range of spectral bandwidth Quantum efficiency Noise equivalent power MIN. TYP. MAX. UNIT 1 1.3 V 2 30 nA 60 V 45 pF Detectivity VR = 10 V, = 950 nm D* 5 x 1012 cmHz/W Rise time VR = 10 V, RL = 1 k, = 820 nm tr 70 ns Fall time VR = 10 V, RL = 1 k, = 820 nm tf 70 ns VR = 12 V, RL = 1 k, = 870 nm fc 4 MHz VR = 12 V, RL = 1 k, = 950 nm fc 1 MHz Cut-off frequency BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) I ra rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 1000 100 10 VR = 10 V 1 20 94 8403 40 60 80 Tamb - Ambient Temperature (C) VR = 5 V = 950 nm 1.2 1.0 0.8 0.6 0 100 Fig. 1 - Reverse Dark Current vs. Ambient Temperature Rev. 1.8, 24-Aug-11 1.4 94 8409 20 40 60 80 100 Tamb - Ambient Temperature (C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Document Number: 81510 2 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPV23F, BPV23FL www.vishay.com Vishay Semiconductors S ()rel - Relative Spectral Sensitivity 100 10 VR = 5 V = 950 nm 1 0.1 0.01 0.1 1 0.8 0.6 0.4 0.2 0 750 850 950 Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 0 100 Srel - Relative Sensitivity 0.5 mW/cm2 10 10 20 30 1 mW/cm2 = 950 nm 1150 1050 - Wavelength (nm) 94 8408 Fig. 3 - Reverse Light Current vs. Irradiance Ira - Reverse Light Current (A) 1.0 10 Ee - Irradiance (mW/cm2) 94 8424 1.2 0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 40 1.0 0.9 50 0.8 60 70 0.7 0.02 mW/cm2 - Angular Displacement Ira - Reverse Light Current (A) 1000 80 1 0.1 94 8425 1 10 VR - Reverse Voltage (V) 100 0.6 0.4 0.2 0 94 8413 Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement CD - Diode Capacitance (pF) 80 E=0 f = 1 MHz 60 40 20 0 0.1 94 8423 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage Rev. 1.8, 24-Aug-11 Document Number: 81510 3 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPV23F, BPV23FL www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: BPV23F 5 0.15 3.2 0.2 (2.4) 0.2 0.3 6 R 2.25 (sphere) 18.8 0.5 8.6 0.3 < 0.7 2.5 4.5 + 0.1 - 0.3 0.65 + 0.1 - 0.2 0.1 3.4 +- 0.3 Area not plane A C 0.45 + 0.2 - 0.1 0.4 + 0.15 2.54 nom. 1.1 technical drawings according to DIN specifications 0.2 Drawing-No.: 6.544-5199.01-4 Issue: 2; 19.06.01 95 11475 PACKAGE DIMENSIONS in millimeters: BPV23FL 5 3.2 0.2 (2.4) 4.5 0.2 0.3 R 2.2 here ) 10.8 6 5 (sp 32.5 0.5 0.3 < 0.7 2.5 0.15 + 0.1 - 0.3 0.75 - 0.12 0.1 3.4 +- 0.3 Area not plane A C 0.63 0.1 2.54 nom. 0.4 0.1 1.1 0.2 technical drawings according to DIN specifications Drawing-No.: 6.544-5236.01-4 Issue: 2; 07.07.97 96 12205 Rev. 1.8, 24-Aug-11 Document Number: 81510 4 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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