FM400TU-2A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 6-PACK High Power MOSFET Module 200 Amperes/100 Volts A D F G G Q H K L P AB E AE J 7 B N P X (11 PLACES) Z AB AC R AD N L M 1 13 14 T W B A S AF U TC MEASURED POINT 6 12 Z V AA Z W AA Z Y Q K M M V U X C C TERMINAL CODE U V 1 SUP 2 SVP 3 SWP P 4 SUN 5 SVN A (7) GUP (8) GVP (9) GWP (1) SUP (2) SVP (3) SWP U V 6 SWN 7 GUP 8 GVP (13) 9 GWP 10 GUN W 11 GVN 12 GWN (14) B (10) GUN (11) GVN (12) GWN (4) SUN (5) SVN (6) SWN N 13 TH1 14 TH2 Housing Type Tyco Electronics P/N A: 917354-1 B: 177898-1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N P Q Inches 4.33 3.54 1.38 3.82 3.15 3.27 0.26 0.48 0.51 0.65 0.63 1.26 0.35 0.45 0.16 Millimeters 110.0 90.0 35.0 97.0 80.0 83.0 6.5 12.0 12.9 16.5 16.0 32.0 8.8 11.5 4.0 Dimensions R S T U V W X Y Z AA AB AC AD AE AF Inches 0.79 1.50 2.64 1.02 0.98 0.36 Dia. 0.25 Rad. 0.25 0.57 0.55 1.18 0.69 0.47 0.61 0.18 Millimeters 20.0 38.0 67.0 26.0 25.0 9.1 Dia. 6.5 Rad. 6.5 14.5 14.0 30.0 17.5 12.0 15.5 4.5 Description: Powerex MOSFET Modules are designed for use in low voltage switching applications. Each module consists of 6 MOSFET switches with low Rds(on) and a fast recovery body diode to yield low loss. All components and interconnects are isolated from the heat sink baseplate. This offers simplified system assembly and thermal management. Features: Low ESW(off) and Low Rds(on) Super-Fast Recovery FreeWheel Diode Thermistor for TC Sensing Parallel Legs to make a Dual Module at 3X the Rating Positive Locking Connectors Easy Bus Bar Layout Due to Flow Through Power Design Applications: Forklift Off road Electric Vehicle Welder UPS Chopper Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. FM400TU-2A is a 100V (VDSS), 200 Ampere 6-Pack High Power MOSFET Module. Type FM 07/12 Rev. 1 Current Rating Amperes VDSS Volts 200 100 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com FM400TU-2A 6-Pack High Power MOSFET Module 200 Amperes/100 Volts Absolute Maximum Ratings, Tj = 25C unless otherwise specified Ratings Channel Temperature Storage Temperature Symbol FM400TU-2A Units Tj -40 to 150 C Tstg -40 to 125 C VDSS 100 Volts Gate-Source Voltage (D-E Short) VGSS 20 Volts Drain Current (TC = 25C) ID(rms) 200 Arms Peak Drain Current (Pulse) IDM 400* Amperes Avalanche Current (L = 10H, Pulse) IDA 200* Amperes Drain-Source Voltage (G-S Short) Source Current (TC = 25C)** IS(rms) 200 Arms Peak Source Current (Pulse)** ISM 400* Amperes Maximum Power Dissipation (TC = 25C, Tj < 150C)*** PD 650 Watts Maximum Peak Power Dissipation (TC' = 25C, Tj < 150C)*** PD 880 Watts Mounting Torque, M6 Main Terminal -- 40 in-lb Mounting Torque, M6 Mounting -- 40 in-lb -- 600 Grams VISO 2500 Volts Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that device channel temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, source-to-drain free-wheel diode (FWDi). ***TC' measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. 2 07/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com FM400TU-2A 6-Pack High Power MOSFET Module 200 Amperes/100 Volts Electrical Characteristics, Tj = 25C unless otherwise specified Characteristics Drain-Cutoff Current Gate-Source Threshold Voltage Gate Leakage Current Static Drain-Source On-State Resistance Symbol Test Conditions Min. Typ. Max. Units IDSS VDS = VDSS, VGS = 0V -- -- 1.0 mA VGS(th) ID = 20mA, VDS = 10V 4.7 6.0 7.3 Volts IGSS VGS = VGSS, VDS = 0V -- -- 0.5 A rDS(on) (Chip) Static Drain-Source On-State Voltage VDS(on) (Chip) Lead Resistance Rlead Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge QG Turn-on Delay Time td(on) ID = 200A, VGS = 15V, Tj = 25C -- 1.45 2.0 m ID = 200A, VGS = 15V, Tj = 125C -- 2.5 -- m ID = 200A, VGS = 15V, Tj = 25C -- 0.29 0.4 Volts ID = 200A, VGS = 15V, Tj = 125C -- 0.5 -- Volts ID = 200A, Terminal-Chip, Tj = 25C -- 0.8 -- m ID = 200A, Terminal-Chip, Tj = 125C -- 1.12 -- m -- -- 75 nF -- -- 10 nF VDS = 10V, VGS = 0V -- -- VDD = 48V, ID = 200A, VGS = 15V -- 1200 -- -- 400 ns VDD = 48V, ID = 200A, -- -- 400 ns td(off) VGS1 = VGS2 = 15V, RG = 6.3, -- -- 450 ns tf Inductive Load Switching Operation, -- -- 300 ns Diode Reverse Recovery Time** trr IS = 200A -- -- 250 ns Diode Reverse Recovery Charge** Qrr -- 6.0 -- C Source-Drain Voltage VSD -- -- 1.3 Volts Rise Time Turn-off Delay Time Fall Time tr IS = 200A, VGS = 0V 6 nF -- nC **Represents characteristics of the anti-parallel, source-to-drain free-wheel diode (FWDi). 07/12 Rev. 1 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com FM400TU-2A 6-Pack High Power MOSFET Module 200 Amperes/100 Volts Thermal and Mechanical Characteristics, Tj = 25C unless otherwise specified Characteristics Symbol Thermal Resistance, Channel to Case Rth(j-c) Test Conditions Min. Typ. Max. Units MOSFET part (1/6 Module) -- -- 0.19 C/W -- -- 0.142 C/W TC Reference Point per Outline Drawing Thermal Resistance, Channel to Case Rth(j-c') MOSFET part (1/6 Module) Measured Point is Just Under the Chips. Contact Thermal Resistance Rth(c-f) Per 1/6 Module, Thermal Grease Applied -- 0.1 -- C/W Symbol Test Conditions Min. Typ. Max. Units Thermistors Part Characteristics Resistance* Rth TC = 25C -- 100 -- k B Constant* B Resistance at 25C, 50C -- 4000 -- K *B = (InR1 - InR2) / (1/T1 - 1/T2) R1: Resistance at T1(K), R2: Resistance at T2(K) 4 07/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com FM400TU-2A 6-Pack High Power MOSFET Module 200 Amperes/100 Volts OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 400 15 12 10 VGS = 20V 300 DRAIN CURRENT, ID, (AMPERES) DRAIN CURRENT, ID, (AMPERES) 400 9 200 100 300 200 100 VDS = 10V Tj = 25C Tj = 125oC Tj = 25C 0 DRAIN-SOURCE ON-STATE VOLTAGE, VDS(ON), (VOLTS) 2.0 0.2 0.4 0.6 0.8 0 1.0 5 7 9 DRAIN-SOURCE ON-STATE VOLTAGE VS. GATE BIAS CHARACTERISTICS (TYPICAL ) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL - INVERTER PART) 1.0 ID = 400A 0.5 ID = 200A 102 VGS = 0V Tj = 25C Tj = 125oC ID = 100A 5 10 15 GATE-SOURCE VOLTAGE, VGS, (VOLTS) 07/12 Rev. 1 15 103 Tj = 25C 0 13 GATE-SOURCE, VGS, (VOLTS) 1.5 0 11 DRAIN-SOURCE VOLTAGE, VDS, (VOLTS) SOURCE CURRENT, IS, (AMPERES) 0 20 101 0.5 0.6 0.7 0.8 0.9 1.0 SOURCE-DRAIN VOLTAGE, VSD, VOLTS) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com FM400TU-2A 6-Pack High Power MOSFET Module 200 Amperes/100 Volts CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 Coss Crss VGS = 0V SWITCHING LOSS, ESW(on), ESW(off), Err, (mJ/PULSE) 100 10-1 101 100 100 101 trr 102 Irr VDD = 48V VGS = 15V RG = 6.3 Tj = 25C INDUCTIVE LOAD 101 100 101 102 102 103 DRAIN-SOURCE VOLTAGE, VDS, (VOLTS) SOURCE CURRENT, IS, (AMPERES) SWITCHING LOSS VS. DRAIN CURRENT (TYPICAL) SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) VDD = 48V VGS = 15V RG = 6.3 Tj = 125C INDUCTIVE LOAD ESW(off) ESW(on) Err 10-1 10-2 101 102 DRAIN CURRENT, ID, (AMPERES) 6 REVERSE RECOVERY CURRENT, trr, Irr, (ns) Ciss SWITCHING LOSS, ESW(on), ESW(off), Err, (mJ/PULSE) CAPACITANCE, Cies, Coes, Crss, (nF) 102 103 102 VDD = 48V VGS = 15V ID = 200A 101 ESW(on) ESW(off) 100 Err 10-1 Tj = 125C INDUCTIVE LOAD 10-2 0 10 20 30 40 50 60 70 GATE RESISTANCE, RG, () 07/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com FM400TU-2A 6-Pack High Power MOSFET Module 200 Amperes/100 Volts SWITCHING TIME VS. GATE RESISTANCE (TYPICAL ) SWITCHING TIME VS. DRAIN CURRENT (TYPICAL ) 104 103 103 tf VDD = 48V VGS = 15V ID = 200A Tj = 125C INDUCTIVE LOAD 102 101 0 GATE-SOURCE VOLTAGE, VGS, (VOLTS) 20 10 20 30 40 50 60 tr tf VDD = 48V VGS = 15V RG = 6.3 Tj = 125C INDUCTIVE LOAD 102 103 DRAIN CURRENT, ID, (AMPERES) GATE CHARGE CHARACTERISTICS (TYPICAL ) GATE THRESHOLD VOLTAGE VS. TEMPERATURE (TYPICAL ) VDD = 24V VDD = 48V 10 5 300 600 900 1200 1500 1800 GATE CHARGE, QG, (nC) 07/12 Rev. 1 td(on) 102 101 101 70 ID = 200A 0 td(off) GATE RESISTANCE, RG, () 15 0 SWITCHING TIMES, (ns) td(off) tr GATE-THRESHOLD VOLTAGE, VGS(th), (VOLTS) SWITCHING TIME, (ns) td(on) 7 6 5 4 3 2 1 0 VGS = 10V ID = 20mA 0 20 40 60 80 100 120 140 160 CHANNEL TEMPERATURE, Tj, (C) 7 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com DRAIN-SOURCE ON-STATE VOLTAGE VS. TEMPERATURE (TYPICAL ) DRAIN-SOURCE ON-STATE RESISTANCE, rDS(ON), (m) 3.5 ID = 200A VGS = 12V VGS = 15V 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 CHANNEL TEMPERATURE, Tj, (C) 8 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth * (NORMALIZED VALUE) FM400TU-2A 6-Pack High Power MOSFET Module 200 Amperes/100 Volts 100 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) 10-2 10-1 100 101 10-1 10-1 10-2 10-2 10-3 Single Pulse TC = 25C 10-5 10-4 10-3 10-3 TIME, (s) 07/12 Rev. 1