MSC1015MP
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The MSC1015MP is a gold-metallized, epitaxial, silicon NPN power
transistor designed for applications requiring high peak power and
low duty cycles, such as IFF, DME, and TACAN. It is packaged in the
.280" input-matched stripline package, resulting in improved
broadband performance and low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 65 V
VCES Collector-Emitter Voltage 65 V
VEBO Emitter-Base Voltage 3.5 V
IC Device Current 1.5 A
PDISS Power Dissipation 87.5 W
TJ Junction Temperature + 200 °°C
TSTG Storage Temperature –65 to +150 °°C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance 2 °°C/W
FeaturesFeatures
• DESIGNED FOR HIGH POWER PULSED IFF, DME,
TACAN APPLICATIONS
• 20 W (typ.) IFF 1030 – 1090 MHz
• 15 W (min.) DME 1025 – 1150 MHz
• 15 W (typ.) TACAN 960 –1215 MHz
• REFRACTORY GOLD METALLIZATION
• EMITTER BALLASTING AND LOW THERMAL
RESISTANCE FOR RELIABILITY AND RUGGEDNESS
• 20:1 LOAD VSWR CAPABILITY AT SPECIFIED
OPERATING CONDITIONS
• INPUT MATCHED, COMMON BASE CONFIGURATION
RF AND MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MSC1015MP
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)C)
STATIC Value
Symbol Test Conditions Min. Typ. Max. Units
BVCBO IC = 10 mA IE = 0 mA 65 V
BVCES IC = 25 mA VBE = 0 V 65 V
BVEBO IE = 1 mA IC = 0 mA 3.5 V
ICES VCE = 50 V IE = 0 mA 2
hFE VCE = 5 V IC = .1 A 10 200
DYNAMIC Value
Symbol Test Conditions Min. Typ. Max. Units
POUT f = 1025 – 1150 MHz PIN = 1.5 W VCE = 50 V 15 W
GP f = 1025 – 1150 MHz PIN = 1.5 W VCE = 50 V 10 dB
çC f = 1025 – 1150 MHz PIN = 1.5 W VCE = 50 V 30 %
Note: Pulse width = 10µSec
Duty Cycle = 1%
IMPEDANCE DATAIMPEDANCE DATA
Freq. (MHz) ZIN (ΩΩ) ZCL (ΩΩ)
960 2.5 + j 12.5 17.0 + j 15.5
1030 3.5 + j 12.5 17.0 + j 14.5
1090 3.0 + j 13.5 19.5 + j 12.5
1150 3.5 + j 14.0 18.0 + j 12.0
1215 5.0 + j 17.0 16.0 + j 12.0
MSC1015MP
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA
