PD - 97529 IRLML6246TRPbF HEXFET(R) Power MOSFET VDS VGS Max 20 12 RDS(on) max 46 m : 66 m : (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) V V * ' 6 Micro3TM (SOT-23) IRLML6246TRPbF Application(s) * Load/ System Switch Features and Benefits Benefits Features Industry-standard SOT-23 Package RoHS compliant containing no lead, no bromide and no halogen Multi-vendor compatibility Environmentally friendly results in Absolute Maximum Ratings Max. Units VDS Symbol Drain-Source Voltage 20 V ID @ TA = 25C Continuous Drain Current, VGS @ 10V 4.1 ID @ TA = 70C Continuous Drain Current, VGS @ 10V 3.3 IDM Pulsed Drain Current 16 PD @TA = 25C Maximum Power Dissipation 1.3 PD @TA = 70C Maximum Power Dissipation 0.8 Linear Derating Factor 0.01 W/C Gate-to-Source Voltage 12 V -55 to + 150 C VGS TJ, TSTG Parameter Junction and Storage Temperature Range A W Thermal Resistance Symbol Parameter e RJA Junction-to-Ambient RJA Junction-to-Ambient (t<10s) f Typ. Max. --- 100 --- 99 Units C/W ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page 10 www.irf.com 1 7/8/10 IRLML6246TRPbF Electric Characteristics @ TJ = 25C (unless otherwise specified) Symbol V(BR)DSS Parameter Drain-to-Source Breakdown Voltage Min. Typ. Max. Units 20 --- --- --- 0.03 --- --- 30 46 --- 45 66 0.5 0.8 1.1 --- --- 1.0 --- --- 150 Gate-to-Source Forward Leakage --- --- 100 Gate-to-Source Reverse Leakage --- --- -100 RG Internal Gate Resistance --- 4.0 --- gfs Forward Transconductance 10 --- --- S Qg Total Gate Charge --- 3.5 --- Qgs Gate-to-Source Charge --- 0.26 --- Qgd Gate-to-Drain ("Miller") Charge --- 1.7 --- VGS = 4.5V td(on) Turn-On Delay Time --- 3.6 --- VDD tr Rise Time --- 4.9 --- td(off) Turn-Off Delay Time --- 11 --- tf Fall Time --- 6.0 --- Ciss Input Capacitance --- 290 --- Coss Output Capacitance --- 64 --- Crss Reverse Transfer Capacitance --- 41 --- V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS IGSS Drain-to-Source Leakage Current V Conditions VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m V A nA d = 3.3A d VGS = 4.5V, ID = 4.1A VGS = 2.5V, ID VDS = VGS, ID = 5A VDS =16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125C VGS = 12V VGS = -12V VDS = 10V, ID = 4.1A ID = 4.1A nC ns VDS =10V d =10Vd ID = 1.0A RG = 6.8 VGS = 4.5V VGS = 0V pF VDS = 16V = 1.0MHz Source - Drain Ratings and Characteristics Symbol IS Parameter Continuous Source Current (Body Diode) ISM Pulsed Source Current c (Body Diode) Min. Typ. Max. Units --- --- 1.3 --- --- 16 Conditions MOSFET symbol A D showing the G integral reverse S p-n junction diode. VSD Diode Forward Voltage --- --- 1.2 V TJ = 25C, IS = 4.1A, VGS = 0V trr Reverse Recovery Time --- 8.6 13 ns TJ = 25C, VR = 15V, IF=1.3A Qrr Reverse Recovery Charge --- 2.8 4.2 nC di/dt = 100A/s 2 d d www.irf.com IRLML6246TRPbF 100 100 60s PULSE WIDTH Tj = 150C 10 1 TOP 1.5V 0.1 BOTTOM VGS 10V 4.5V 3.0V 2.5V 2.3V 2.0V 1.8V 1.5V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 60s PULSE WIDTH Tj = 25C 10 1 1.5V BOTTOM VGS 10V 4.5V 3.0V 2.5V 2.3V 2.0V 1.8V 1.5V 0.1 0.01 0.1 1 10 0.1 100 1 10 100 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 2.0 10 TJ = 150C 1 TJ = 25C V DS = 15V 60s PULSE WIDTH 0.1 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) TOP ID = 4.1A VGS = 4.5V 1.5 1.0 0.5 1.0 1.5 2.0 2.5 3.0 V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 3.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRLML6246TRPbF 10000 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED ID= 4.1A V GS, Gate-to-Source Voltage (V) C rss = C gd C, Capacitance (pF) C oss = C ds + C gd 1000 Ciss Coss 100 Crss V DS= 10V V DS= 4.0V 10.0 10 8.0 6.0 4.0 2.0 0.0 1 10 100 0.0 2.0 V DS, Drain-to-Source Voltage (V) ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 TJ = 150C TJ = 25C 0 V GS = 0V 0.4 0.6 0.8 1.0 V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 8.0 OPERATION IN THIS AREA LIMITED BY RDS(on) 10 100sec 1msec 1 10msec 0.1 TA = 25C Tj = 150C Single Pulse 0.01 0.0 0.2 6.0 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1 4.0 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 4 V DS= 16V 12.0 1.2 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRLML6246TRPbF 5.0 RD V DS VGS ID , Drain Current (A) 4.0 D.U.T. RG + - VDD 3.0 VGS Pulse Width 1 s Duty Factor 0.1 % 2.0 Fig 10a. Switching Time Test Circuit 1.0 VDS 0.0 90% 25 50 75 100 125 150 TA , Ambient Temperature (C) 10% VGS Fig 9. Maximum Drain Current Vs. Ambient Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response ( Z thJA ) 1000 100 D = 0.50 0.20 0.10 0.05 10 0.02 0.01 1 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 80 RDS(on), Drain-to -Source On Resistance ( m) RDS(on), Drain-to -Source On Resistance (m) IRLML6246TRPbF ID = 4.1A 60 TJ = 125C 40 TJ = 25C 20 0 1 2 3 4 5 6 7 8 9 10 11 12 120 100 80 Vgs = 4.5V 60 Vgs = 10V 40 20 0 5 10 15 20 25 30 ID, Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 13. Typical On-Resistance Vs. Drain Current Fig 12. Typical On-Resistance Vs. Gate Voltage Id Vds Vgs L Vgs(th) Qgodr Qgd 0 20K 1K VCC S Qgs2 Qgs1 Fig 14a. Basic Gate Charge Waveform 6 DUT Fig 14b. Gate Charge Test Circuit www.irf.com IRLML6246TRPbF 100 80 1.0 0.5 Power (W) V GS(th) , Gate threshold Voltage (V) 1.5 ID = 10uA ID = 250uA 60 40 20 0.0 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( C ) Fig 15. Typical Threshold Voltage Vs. Junction Temperature www.irf.com 0 1E-005 0.0001 0.001 0.01 0.1 1 10 Time (sec) Fig 16. Typical Power Vs. Time 7 IRLML6246TRPbF Micro3TM(SOT-23) Package Outline Dimensions are shown in millimeters (inches) DIMENSIONS A 6 5 SYMBOL D A A1 A2 b c D E E1 e e1 L L1 L2 A A2 3 6 C E E1 1 2 0.15 [0.006] M C B A 0.10 [0.004] C A1 5 B 3X b e 0.20 [0.008] M C B A NOTES: e1 H 4 L1 Recommended Footprint c L2 0.972 0.950 0.802 3X L 7 1.900 MILLIMETERS INCHES MIN MAX MIN 0.89 0.01 0.88 0.30 0.08 2.80 2.10 1.20 0.95 1.90 0.40 0.54 0.25 0 1.12 0.10 1.02 0.50 0.20 3.04 2.64 1.40 BSC BSC 0.60 REF BSC 8 MAX 0.0004 %6& %6& REF BSC 0 8 2.742 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. Micro3TM(SOT-23) Part Marking Information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ote: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com IRLML6246TRPbF Micro3TM(SOT-23) Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 ( .080 ) 1.95 ( .077 ) 1.6 ( .062 ) 1.5 ( .060 ) 4.1 ( .161 ) 3.9 ( .154 ) TR FEED DIRECTION 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.32 ( .051 ) 1.12 ( .045 ) 8.3 ( .326 ) 7.9 ( .312 ) 0.35 ( .013 ) 0.25 ( .010 ) 1.1 ( .043 ) 0.9 ( .036 ) 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 9 IRLML6246TRPbF Orderable part number Package Type IRLML6246TRPbF Micro3TM(SOT-23) Qualification information Qualification level Moisture Sensitivity Level Consumer (per JEDEC JESD47F Micro3TM(SOT-23) RoHS compliant Note Standard Pack Form Quantity Tape and Reel 3000 guidelines ) MSL1 (per IPC/JEDEC J-STD-020D ) Yes Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%. Surface mounted on 1 in square Cu board Refer to application note #AN-994. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/2010 10 www.irf.com