7/8/10
IRLML6246TRPbF
HEXFET® Power MOSFET
PD - 97529
www.irf.com 1
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 10
Application(s)
Micro3TM (SOT-23)
IRLML6246TRPbF
'
6
*
• Load/ System Switch
Features and Benefits
Features Benefits
VDS 20 V
VGS Max ± 12 V
RDS(on) max
(@VGS = 4.5V) 46 m
:
RDS(on) max
(@VGS = 2.5V) 66 m
:
Absolute Maximum Ratings
Symbol Parameter Units
VDS Drain-Source Voltage V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TA = 25°C Maximum Power Dissipation
PD @TA = 70°C Maximum Power Dissipation
Linear Derating Factor W/°C
VGS Gate-to-Source Voltage V
TJ, TSTG Junction and Storage Temperature Range °C
Thermal Resistance
Symbol Parameter Typ. Max. Units
RθJA Junction-to-Ambient
e
––– 100
RθJA Junction-to-Ambient (t<10s)
f
––– 99
W
°C/W
A
Max.
4.1
3.3
-55 to + 150
± 12
0.01
20
1.3
0.8
16
Industry-standard SOT-23 Package Multi-vendor compatibility
RoHS compliant containing no lead, no bromide and no halogen results in Environmentally friendly
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D
S
G
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C
––– 30 46
––– 45 66
VGS(th) Gate Threshold Voltage 0.5 0.8 1.1 V
IDSS ––– ––– 1.0
––– ––– 150
IGSS Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
RGInternal Gate Resistance ––– 4.0 ––– Ω
gfs Forward Transconductance 10 ––– ––– S
QgTotal Gate Charge ––– 3.5 –––
Qgs Gate-to-Source Charge ––– 0.26 –––
Qgd Gate-to-Drain ("Miller") Charge ––– 1.7 –––
td(on) Turn-On Delay Time ––– 3.6 –––
trRise Time ––– 4.9 –––
td(off) Turn-Off Delay Time ––– 11 –––
tfFall Time ––– 6.0 –––
Ciss Input Capacitance ––– 290 –––
Coss Output Capacitance ––– 64 –––
Crss Reverse Transfer Capacitance ––– 41 –––
Source - Drain Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units
ISContinuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
c
VSD Diode Forward Voltage ––– ––– 1.2 V
trr Reverse Recovery Time ––– 8.6 13 ns
Qrr Reverse Recovery Charge ––– 2.8 4.2 nC
––– –––
––– –––
pF
A
1.3
16
VDD =10V
d
nA
nC
ns
VDS = VGS, ID = 5μA
VDS =16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
RDS(on) VGS = 2.5V, ID = 3.3A
d
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current μA
mΩ
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 4.1A
d
MOSFET symbol
showing the
VDS =10V
Conditions
VGS = 4.5V
VGS = 0V
VDS = 16V
ƒ = 1.0MHz
RG = 6.8Ω
VGS = 4.5V
d
di/dt = 100A/μs
d
VGS = 12V
VGS = -12V
TJ = 25°C, IS = 4.1A, VGS = 0V
d
integral reverse
p-n junction diode.
VDS = 10V, ID = 4.1A
ID = 4.1A
ID = 1.0A
TJ = 25°C, VR = 15V, IF=1.3A
IRLML6246TRPbF
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Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
ID, Drain-to-Source Current (A)
≤60μs PULSE WIDTH
Tj = 25°C
1.5V
VGS
TOP 10V
4.5V
3.0V
2.5V
2.3V
2.0V
1.8V
BOTTOM 1.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
≤60μs PULSE WIDTH
Tj = 150°C
1.5V
VGS
TOP 10V
4.5V
3.0V
2.5V
2.3V
2.0V
1.8V
BOTTOM 1.5V
1.0 1.5 2.0 2.5 3.0 3.5
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 150°C
VDS = 15V
≤60μs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 4.1A
VGS = 4.5V
IRLML6246TRPbF
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Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
0.0
0
1
10
100
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
ID, Drain-to-Source Current (A)
TA = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS(on)
100μsec
0.0 2.0 4.0 6.0 8.0
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VGS, Gate-to-Source Voltage (V)
VDS= 16V
VDS= 10V
VDS= 4.0V
ID= 4.1A
IRLML6246TRPbF
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Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
VGS
+
-
VDD
25 50 75 100 125 150
TA , Ambient Temperature (°C)
0.0
1.0
2.0
3.0
4.0
5.0
ID , Drain Current (A)
1E-006 1E-005 0.0001 0.001 0.01 0.1 110
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
1000
Thermal Response ( Z thJA )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
IRLML6246TRPbF
6www.irf.com
Fig 13. Typical On-Resistance Vs. Drain
Current
Fig 12. Typical On-Resistance Vs. Gate
Voltage
Fig 14b. Gate Charge Test Circuit
Fig 14a. Basic Gate Charge Waveform
1K
VCC
DUT
0
L
S
20K
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2QgdQgodr
0 5 10 15 20 25 30
ID, Drain Current (A)
20
40
60
80
100
120
RDS(on), Drain-to -Source On Resistance (mΩ)
Vgs = 10V
Vgs = 4.5V
0 1 2 3 4 5 6 7 8 9 10 11 12
VGS, Gate -to -Source Voltage (V)
20
40
60
80
RDS(on)
, Drain-to -Source On Resistance (m
Ω)
ID = 4.1A
TJ = 25°C
TJ = 125°C
IRLML6246TRPbF
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Fig 15. Typical Threshold Voltage Vs.
Junction Temperature
Fig 16. Typical Power Vs. Time
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
0.0
0.5
1.0
1.5
VGS(th), Gate threshold Voltage (V)
ID = 10uA
ID = 250uA
1E-005 0.0001 0.001 0.01 0.1 110
Time (sec)
0
20
40
60
80
100
Power (W)
IRLML6246TRPbF
8www.irf.com
Micro3™(SOT-23) Part Marking Information
Micro3™(SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
e
E1
E
D
A
B
0.15 [0.006]
e1
12
3
MCBA
5
6
6
5
NOTES:
b
A1 3X
A
A2
ABC
M0.20 [0.008]
0.10 [0.004] C
C
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
0.89 1.12
SYMBOL MAXMIN
A1
b
0.01 0.10
c
0.30 0.50
D
0.08 0.20
E
2.80 3.04
E1
2.10 2.64
e
1.20 1.40
A
0.95 BSC
L0.40 0.60
08
MILLIMETERS
A2 0.88 1.02
e1 1.90 BSC
REF0.54L1
BSC0.25
L2
BSC
REF
%6&
INCHES
80
%6&
0.0004
MIN MAX
DIMENSIONS
0.972
1.900
Recommended Footprint
0.802
0.950 2.742
3X L
c
L2
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IRLML6246TRPbF
www.irf.com 9
Micro3™(SOT-23) Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
TR
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
1.6 ( .062 )
1.5 ( .060 ) 1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
1.1 ( .043 )
0.9 ( .036 )
4.1 ( .161 )
3.9 ( .154 ) 0.35 ( .013 )
0.25 ( .010 )
8.3 ( .326 )
7.9 ( .312 )
1.32 ( .051 )
1.12 ( .045 )
9.90 ( .390 )
8.40 ( .331 )
178.00
( 7.008 )
MAX.
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
IRLML6246TRPbF
10 www.irf.com
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2010
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board
Refer to application note #AN-994.
MSL1
(per IPC/JEDEC J-STD-020D††† )
RoHS compliant Yes
Micro3™(SOT-23)
Qualification information†
Moisture Sensitivity Level
Qualification level
Consumer††
(per JEDEC JESD47F ††† guidelines )
Note
Form Quantity
IRLML6246TRPbF Micro3™
(
SOT-23
)
Tape and Reel 3000
Orderable part number Package Type Standard Pack
