, E STU CCU ELL , AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS (100% Probed Parameters) __ Bicso _ BYceo _ BVEso . hee Ic Vee Ic EEOMETRY TYPE DESCRIPTION Mia. @ is ain. et Ic. Min. @ 3) Min, Way. (mi) Volts Mow. THC-2484 NPN Low Level 60 OL 60 10 6 01 100 500 01 5 50 mA TE THC-4123 NPN Gen. 40 01 30 1 5 01 50 150 2 1 200 mA SK JHC-4124 Purpose 30 01 25 ] 5 01 120 =360 2 1 200 mA SK THC-4125 PNP Gen. 30 01 30 1 4 1 50 150 2 1 200 mA SL THC-4126 Purpose 25 01 25 1 4 .O1 120 = 360 2 1 200 mA SL THC-40D4 NPN Silicon 607 Jl 45 10 5 ll 50 150 100 2 1A Ss THC-40D5 Power 60t al 45 10 5 JA 120 360 100 2 1A ss THC-41D4 PNP Silicon 60t Al 45 10 5 Jl 50 150 100 2 LA 8Z THC-4105 Power 60 wl 45 10 5 Jl 120 360 1002 1A 8Z THC-40010 NPN Silicon 90t dA 75 10 5 al 50 150 100.2 1A Ss THC-40D11 Power 90+ a 75 10 5 Al 120 360 100 2 1A $s THC-41D10 PNP Silicon 90t ll 75 10 5 Jl 50 150 100 2 1A $Z THC-41D11 Power 90t sl 75 10 5 a 120 = 360 1002 1A $Z THC-4205 NPN Silicon 55t 01 45 100 5 al 40 120 200061 3A vc THC-42011 Power 901 01 80 = 100 5 a 40 12006200) 11 3A VC THC-43C5 PNP Silicon 55t .O1 45 100 3 aI 40 120 200 1 3A VZ THC-43C11 Power got OL 80 6100 5 l 40 120 200 1 3A YZ THC-2605 PNP Low Level 70 O01 60 10 6 01 joc} 8=6300~Sft(CO 5 200 mA ST THC-3877 NPN Low Level! 70 1.0 70 1 4 10 20 =. 250 2 45 50 mA TE tBVces PRO-ELECTRON TRANSISTOR CHIPS Pro-Electron chip types are available in geometries as listed. Type Geometry Type Geometry Type Geometry Type Geometry BC182A BC308A Ta BC416B SL or SM BCI67A SE or TV BC182B BC3088 Ta BC416C SL or SM BC167B SE or TV BC212A Ta BC308C TQ BC32716 Tz BC168A SE or TV BC212B Ta BC309B Ta BC327~25 TZ BC168B SE or TV BC309C Ta BC32740 TZ BC168C SE or TV BC237A TN 7 BC237B TN BC4138 SE or TE BC328-~16 TZ BC169B SE or TV BC413C SE BC32825 TZ BC169C SE or TV BC238A . or TE BC238B TN BC414B SE or TE BC328~40 TZ BC257A SL or SM BC238C TN BC414C SE or TE BC33716 TY BC257B SL or SM BC239B TN BC337-25 TY BC258A SL or SM BC239C TN BC415A SL or SM BC33740 TY BC258B SL or SM BC415B SL or SM BC338--16 TY BC258C SL or SM BC307A, Ta BC415C SL or SM BC338-25 TY BC259B SL or SM BC307B Ta BC416A SL or SM BC338--40 TY BC259C SL or SM a QUALITY ASSURANCE PROVISIONS All Sprague transistor chips (dice) are 100% D-C probe-tested to the minimum specifications listed, and they are guaranteed to an LTPD of 10%. Process design insures that the mounted chips will produce a high yield per E!A registered specifica- tions, and other design parameters. When required, samples can be mounted on standard pack- ages permitting performance of Group A and/or Group B inspection. Generic data is available on request. Visual inspection is 100%. Examples of defects looked for include aluminum defects, foreign matter, ink, oxide defects, peeling or missing gold backing and defects in the scribing. ABSOLUTE MAXIMUM RATINGS @ Storage Temperature Range: 65 to + 200C @ Junction Temperature, Operating: + 200C @ Die Mount Temperature (2 minutes): + 425C @ Power Dissipation: Limited by 6,.,