CAUTION / WARNING * The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. * Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements in the performance, reliability, or manufacturability of its products. Before placing an order, Sanken advises its customers to obtain the latest version of the relevant information to verify that the information being relied upon is current. * Application and operation examples described in this catalog are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken or any third party which may result from its use. * When using the products herein, the applicability and suitability of such products for the intended purpose or object shall be reviewed at the users responsibility. * Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction. * Sanken products listed in this catalog are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Before placing an order, the user's written consent to the specifications is requested. * The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited. * Anti radioactive ray design is not considered for the products listed herein. * This publication shall not be reproduced in whole or in part without prior written approval from Sanken. * Gallium arsenide is used in some of the products listed in this publication. These products are dangerous if they are burned or smashed in the process of disposal. It is also dangerous to drink the liquid or inhale the gas generated by such products when chemically disposed. 1 Product Groups Regulator High-side power switch Low-side power switch Motor driver IC Hall-Effect IC Custom IC Transistor MOS FET Rectifier Diode for alternator High-voltage diode for igniter Power Zener diode General-purpose diode LED (visible & infrared) 2 Applications [Power Train Control] Engine * Fuel injection * Ignition control * Air ratio control * Emission purification control * Idling control * Knocking and EGR control * Variable valve timing control Transmission * Fully electronic control * CVT control Alternator [Carbody Control and Safety] 4WD 4WS ABS Power steering Auto cruising Traction control Stability control Airbag HID Head Lamp [Compartment Equipment] Automatic air conditioner Power window Keyless entry Panel, Multi-media * Meter display * Car audio * Navigation * VICS 3 Contents Application Note for Regulator ICs Dropper Type Regulator ICs * With Output ON/OFF Control * 3-terminal * 2-output 5 Switching Type Regulator ICs SI-3001S SI-3003S SI-3101S SI-3201S High-side Power Switch ICs * With Diagnostic Function * With Diagnostic Function , Built-in Zener Diode * Surface-mount 2-circuits * 3-circuits * 4-circuits SI-5151S SI-5153S SDH04 SLA2501M SLA2502M SI-5152S SI-5154S SPF5003 SPF5007 SPF5002A SPF5012 SLA4708M SI-5300 SLA2402M SPF5009 Low-side Switch ICs * Surface-mount 4-circuits * Surface-mount 4-circuits with Output Monitor Stepper-motor Driver IC Full-bridge PWM Motor Driver IC High Voltage Driver ICs for HID Lamps 8 SI-3102S 10 14 SI-5155S 16 22 SPF5004 26 32 36 40 44 46 48 SLA2403M 52 Hall-Effect ICs 60 Custom IC 62 Transistors and MOS FETs * Index by Application * Index by Load * Power Transistor 2SA1488/1488A 2SA1567 2SC3852 2SC4024 2SD2141 2SD2382 FP812 MN611S * Power Transistor Array STA315A STA335A STA463C STA464C * Surface-mount Power Transistor Array SDA03 SDA04 * MOS FET 2SK2701 FKV460 FKV560S FKV660 * MOS FET Array STA508A STA509A * Surface-mount MOS FET Array SDK06 SDK08 Thyristor with built-in reverse diode for HID lamp ignition Rectifier Diode for Alternator High-voltage Diode for Igniter Power Zener Diode General-purpose Diode General-purpose Diode - External Dimensions General-purpose Diode - Taping Specifications General-purpose LEDs General-purpose LED - External Dimensions Index by Part No. 4 6 64 65 2SA1568 2SC4065 2SD2633 MN638S STA415A SLA8004 SDC09 FKV460S FKV660S SMA5113 SDK09 TFC-561D 2SC3851 2SC4153 FN812 66 STA461C 81 SPF0001 FKV560 88 SLA5027 99 92 103 106 107 108 109 110 114 116 119 125 130 Application Note for Regulator ICs Temperature and Reliability Reliability of an IC is generally heavily dependent on operating temperature. Heat radiation must be fully considered, and an ample margin should be given to the radiating area in designing heatsinks. When mounting ICs on heatsinks, always apply silicone grease and firmly tighten. Air convection should actively be used in actual heat dissipation. The reliability of capacitors and coils, the peripheral components, is also closely related to temperature. A high operating temperature may reduce the service life. Exceeding the allowable temperature may cause coils to be burned or capacitors to be damaged. Make sure that output smoothing coils and input/output capacitors do not exceed their allowable temperature limit in operation. We recommend, in particular, to provide an ample margin for the ratings of coils to minimize heat generation. generally used. Moreover, the heat dissipation capacity of a heatsink is heavily dependent on how it is mounted. It is therefore important and recommended to measure the heatsink and case temperature in actual operating environments. The Ta-PD characteristics are provided for each product type for reference purposes. Power Dissipation (PD) Screw Torque 1. Dropper Type Screw torque should be between 0.588 to 0.686 [N * m] (6.0 to 7.0 [kgf * cm]). PD = IO * [VIN (mean) - VO] Setting DC Input Voltage Observe the following precautions when setting the DC input voltage: * VIN (min) must be at least the set output voltage plus dropout voltage for the dropper type. It must be at least the recommended lowest input voltage for the switching type. * VIN (max) must not exceed the DC input voltage of the electrical characteristics. 2. Switching Type V PD = VO * I O ( 100 - 1) - VF * IO (1 - O ) VIN Efficiency depends on input/output conditions. Refer to the efficiency characteristics. VO : Output voltage VIN : Input voltage : Efficiency VF : Diode forward voltage IO : Output current Recommended silicone grease Volatile type silicone grease may produce cracks after elapse of long term, resulting in reducing heat radiation effect. Silicone grease with low consistency (hard grease) may cause cracks in the mold resin when screwing the product to a heatsink. Type Heatsink Design The maximum junction temperature Tj (max) and the maximum case temperature Tc (max) given in the absolute maximum ratings are specific to each product type and must be strictly met. Thus, heatsink design must be performed in consideration of the condition of use which affects the maximum power dissipation PD (max) and the maximum ambient temperature Ta (max). To facilitate heatsink design, the relationship between these two parameters is presented in the Ta-PD characteristic graphs. Heatsink design must be performed in the following steps: 1. Obtain the maximum ambient temperature Ta (max) (within the set). 2. Obtain the maximum power dissipation PD (max). 3. Identify the intersection on the Ta-PD characteristic graph and obtain the size of the heatsink to be used. The size of a heatsink has been obtained. In actual applications, a 10 to 20% derating factor is Suppliers G746 Shin-Etsu Chemical Co., Ltd. YG6260 GE Toshiba Silicones Co., Ltd. SC102 Dow Corning Toray Silicone Co., Ltd. Others This product may not be connected in parallel. The switching type may not be used for current boosting and stepping up voltage. 5 Dropper Type Regulator ICs [With Output ON/OFF Control] SI-3001S External Dimensions (unit: mm) 3.2 0.2 4.2 0.2 2.8 0.2 a (2.0) 0.95 0.15 (Ta = 25C) Ratings Unit DC Input Voltage VIN 35 V Output Control Terminal Voltage VC VIN V Output Current IO 1 1.0 * A PD1 18 W With infinite heatsink PD2 1.5 W Stand-alone without heatsink +0.2 Conditions 0.85 - 0.1 (8.0) Symbol (4.6) Absolute Maximum Ratings 5.0 0.6 2.6 0.1 b Parameter (17.9) 16.9 0.3 4.0 0.2 0.5 10.0 0.2 7.9 0.2 Features Output current of 1.0A 5-terminal type <output on/off control, variable output voltage (rise only)> Voltage accuracy of 2% Low dropout voltage 1V at IO 1.0A, 0.5V at IO 0.4A Built-in overcurrent, overvoltage and thermal protection circuits Withstands external electromagnetic noises TO220 equivalent full-mold package +0.2 -0.1 0.45 P1.7 0.7* 4=6.8 0.7 3.9 0.7 Power Dissipation 1 Junction Temperature Tj - 40 to +125 C Operating Temperature TOP - 40 to +100 C Storage Temperature Tstg - 40 to +125 C Junction to Case Thermal Resistance j-c 5.5 C/W Junction to Ambient-Air Thermal Resistance j-a 66.7 C/W (4.3) 8.2 0.7 2 3 4 1. GND 2. VC (on/off) 3. Vo 4. Vosense 5. VIN 5 a: Part No. b: Lot No. (Forming No. 1101) Stand-alone without heatsink Equivalent Circuit Diagram Tr1 5 3 VO VIN R1 Electrical Characteristics Symbol VIN Input Voltage VO Output Voltage min typ R3 a 6 *2 4.90 max 30 *1 5.00 Unit Conditions e d V 5.10 V VIN =12 to 16V, IO = 0.4A 0.5 V IO 0.4A IO 1.0A VDIF 1.0 V Line Regulation VO LINE 30 mV IO =0.4A, VIN =6 to 16V Load Regulation VO LOAD 100 mV IO =0 to 0.4A Output Voltage Temperature Coefficient VO /T 0.5 mV/C dB f =100 to 120Hz mA IO = 0A RREJ 54 Iq 3 Overcurrent Protection Starting Current I S1 3 1.2 * Output ON VC, IH 2.0 * Output OFF VC, IL 0.8 V Output ON I C, IH 20 A VC = 2.7V Output OFF I C, IL - 0.3 mA VC = 0.4V Vc Terminal R2 1 a : Pre-regulator GND b : Output ON/OFF control c : Thermal protection d : Over-input and overcurrent protection e : Drive circuit f : Error amplifier g : Reference voltage Standard Circuit Diagram D1 A 4 V 5 Control Voltage Control Current VIN 3 SI-3001S OPEN 2 DC input + Notes: *1. Since PD (max) = ( VIN - VO) * IO = 18( W ), VIN (max) and IO (max) may be limited depending on operating conditions. Refer to the Ta -PD curve to compute the corresponding values. *2. Refer to the dropout voltage. *3. IS1 rating shall be the point at which the output voltage VO (VIN = 14V, Io = 0.4A) drops to -5%. *4. The output control terminal Vc is pulled up inside the IC. Each input level can be directly driven with LS-TTL ICs. Thus, LS-TTL direct driving is also possible. 6 R4 g c Vc (on/off) IO =5mA, Ta = -10 to +100C Quiescent Circuit Current 10 f b 2 Dropout Voltage Ripple Rejection 4 VO sense ( Tj= 25C, VIN =14V unless otherwise specified) Ratings Parameter MIC C1 C2 4 1 + CO DC output VO Co : Output capacitor (47 to 100F, 50V) C1, C2 : Input capacitors (C1: approx. 47F, C2: approx. 0.33F). These are required for inductive input lines or long wiring. Tantalum capacitors are recommended for C1 and Co, especially at low temperatures. D1 : Protection diode. Required as protection against reverse biasing between input and output. (Recommended diode: Sanken EU2Z.) SI-3001S Electrical Characteristics Io vs VDIF Characteristicsc Line Regulation Load Regulation 5.1 5.1 0.3 0.2 Output voltage VO (V) IO = 0 (A) 0.4 (A) 1.0 (A) 0.4 Output voltage VO (V) Dropout voltage VDIF (V) 0.5 5.0 V IN = 30 ( V) 12 to 16 ( V) 5.5 ( V) 5.0 0.1 4.9 0 0 0.5 0 1.0 4.9 0 5 10 Output current IO (A) 15 20 25 0 30 0 Output Voltage Temperature Characteristics Output current IO (A) Rise Characteristics 5.1 1.0 0.5 Input voltage VIN (V) Quiescent Circuit Current 15 7 Io = 0 (A) 16(V) VIN = 30(V) 5.0 14(V) 5.5(V) VIN -- IOUT condition 5.5 (V) / 1.0 (A) 12 (V) / 0.4 (A) 14 (V) / 0.4 (A) 16 (V) / 0.4 (A) 30 (V) / 0 (A) 4.9 0 --50 0 50 100 Load resistance 5 4 3 12 () 2 0 150 0 2 4 6 8 0 10 0 2 4 6 6 Io = 0 (A) VIN = 6 (V) I o = 0 (A) VIN = 14 (V) 5 5 2 1 ON 10 (V) Output voltage VO (V) Output voltage VO (V) 3 30 (V) 4 3 5.5 (V) 20 (V) 2 14 (V) 0 0 0 1 2 4 3 0 5 0.5 1.0 1.5 2.0 2.5 3.0 Output current IO (A) Output ON/OFF control voltage VC (V) Overvoltage Protection Characteristics 20 Use G746 silicone grease (Shin-Etsu Chemical) and aluminum heatsink. With infinite heatsink Power Dissipation PD (W) 5 4 3 2 3 2 0 0 125 130 135 140 145 150 155 Ambient temperature Ta (C) Ta --PD Characteristics 6 4 1 1 OFF 10 Thermal Protection Characteristics 6 4 8 Input voltage VIN (V) Overcurrent Protection Characteristics 5 Output voltage VO (V) 5 Input voltage VIN (V) ON/OFF Control Characteristics 6 10 5 () 1 Ambient temperature Ta (C) Output voltage VO (V) Quiescent current lq (mA) 12(V) Output voltage VO (V) Output voltage VO (V) 6 Note on Thermal Protection Characteristics: The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time. 15 200*200*2mm (2.3C/W) 10 100*100*2mm (5.2C/W) 75*75*2mm (7.6C/W) 5 1 Without heatsink 0 10 20 30 40 Input voltage VIN (V) 50 0 --30 -20 0 20 40 60 80 100 Operating temperature Ta (C) 7 Dropper Type Regulator ICs [3-terminal] SI-3003S Features External Dimensions (unit: mm) 3-terminal IC regulator with 0.8A output current Voltage accuracy of 2% Low Dropout voltage 0.5V at IO 0.5A, 1V at IO 0.8A Built-in dropping type overcurrent, overvoltage and thermal protection circuits TO220 equivalent full-mold package 4.2 0.2 3.2 0.2 2.8 0.2 16.9 0.3 7.9 0.2 40.2 0.5 10 0.2 Output current b (Ta =25C) Symbol Ratings Unit VIN 35 V 0.8 * IO 2 2.6 0.15 Conditions 0.94 0.15 (13.5) Parameter DC input voltage 2 max a Absolute Maximum Ratings A PD1 22 W With infinite heatsink PD2 1.8 W Stand-alone without heatsink Tj -40 to +150 C Operating temperature TOP -40 to +100 C Storage temperature Tstg -40 to +150 C +0.2 0.85 -0.1 Power Dissipation Junction to case thermal resistance j-c 5.5 C/W Junction to ambient-air thermal resistance j-a 66.7 C/W Electrical Characteristics Parameter Symbol Ratings Input voltage VIN 6*2 Output voltage VO 4.90 Dropout voltage VO LINE Load regulation VO LOAD Ripple rejection RREJ Quiescent circuit current Stand-alone without heatsink 30 * 1 V 5.00 5.10 V Equivalent Circuit Diagram Conditions VIN VO 5 1 0.5 V IO 0.5A 1.0 V IO 0.8A 30 mV VIN =8 to 16V 100 mV IO =0 to 0.5A dB f=100 to 120Hz mA IO =0A OCP VDIF Line regulation Overcurrent protection starting current max 54 Iq IS1 3 0.9 * 3 10 Terminal connections 1. VIN a: Part No. 2. (NC) b: Lot No. 3. GND 4. (NC) 5. VO (Forming No. 1115) 1 2 3 4 5 Unit typ 0.45 -0.1 (root dimensions) (Tj=25C, VIN =14V, IO =0.5A unless otherwise specified) min +0.2 4*P1.7 0.15 = 6.8 0.15 DRIVE Junction temperature TSD DET ERR REF 3 GND A Notes: *1. Since P D (max) = (VIN - VO) * IO =22 (W), VIN (max) and IO (max) may be limited depending on operating conditions. Refer to the Ta --P D curve to compute the corresponding values. *2. Refer to the dropout voltage. *3. IS1 rating shall be the point at which the output voltage VO (VIN=14V, I O=0.5A) drops to -5%. Standard Circuit Diagram D1 *2 1 DC input + *1 VIN Co : C1 C2 N.C 2 SI-3003S 3 5 4 N.C + CO DC output VO Output capacitor (47 to 100F, 50V) *1 C1,C2 : Input capacitors (C1: approx. 47F, C2: approx. 0.33F). These are required for inductive input lines or long wiring. Tantalum capacitors are recommended for C1 and Co, especially at low temperatures. *2 D1 : Protection diode. Required as protection against reverse biasing between input and output. (Recommended diode: Sanken EU2Z.) 8 SI-3003S Electrical Characteristics Io vs VDIF Characteristics Line Regulation Load Regulation 5.1 0.5 5.1 0.3 0.2 5.0 IO =0A =0.2A =0.5A =0.8A 4.9 IO=0.5, 0.8A =0.2A =0A VIN =35V =25V =14V =6V 4.9 0 0 0 0.2 0.4 0.6 0 0.8 5 10 15 20 25 30 0 35 Output Voltage Temperature Characteristics Ground current lg (mA) Output voltage VO (V) 200 4 3 2 50 100 0 2 4 6 8 0 10 Input voltage VIN (V) Ambient temperature Ta (C) Overcurrent Protection Characteristics 14V 1 Power Dissipation PD (W) Output voltage VO (V) VIN =6V 4 3 2 1 35V 0 0.5 1.0 1.5 Output current IO (A) 25 30 35 With silicone grease Heatsink: aluminum 20 200 * 200 * 2mm (2.3C/W) 15 100 * 100 * 2mm (5.2C/W) 10 75 * 75 * 2mm (7.6C/W) 5 Without heatsink 25V 0 20 With infinite heatsink 5 3 15 25 VIN =6V IO=5mA 4 10 Ta --PD Characteristics 6 5 5 Input voltage VIN (V) Thermal Protection Characteristics 6 2 IO=0.8A =0.5A =0.2A =0A 100 0 0 150 150 50 1 0 0.8 250 IO =0A =0.5A =0.8A 5 4.9 -50 0.6 Circuit Current 6 VIN / IO: 30V / 0A 14V / 0.5A 6V / 0.8A 0.4 Output current IO (A) Rise Characteristics 5.1 5.0 0.2 Input voltage VIN (V) Output current IO (A) Output voltage VO (V) 5.0 0.1 0 Output voltage VO (V) Output voltage VO (V) Output voltage VO (V) Dropout voltage VDIF (V) 0.4 2.0 2.5 0 120 140 160 180 200 Ambient temperature Ta (C) 0 -40 0 40 80 100 Operating temperature Ta (C) Note on Thermal Protection Characteristics: The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time. 9 Dropper Type Regulator ICs [2-output] SI-3101S External Dimensions (unit: mm) Single input dual output <sub output (5V/0.07A), main output (5V/0.4A)> Main output can be externally turned ON/OFF (with ignition switch, etc.) <most suitable as memory backup power supply> Low standby current ( 0.8mA) Low dropout voltage 1V Built-in dropping type overcurrent, overvoltage and thermal protection circuits TO220 equivalent 5-terminal full-mold package 3.2 0.2 4.2 0.2 2.8 0.2 16.9 0.3 4.0 0.2 0.5 10.0 0.2 7.9 0.2 a 2.6 0.1 5.0 0.6 (2.0) b 0.95 0.15 (Ta=25C) Ratings Unit DC input voltage VIN 40 V Battery reverse connection VINB -13 * 6 V +0.2 0.85 -0.1 Conditions (8.0) Symbol (4.6) Absolute Maximum Ratings Parameter (17.9) Features +0.2 -0.1 0.45 VC VIN CH1 IO1 0.07 * CH2 IO2 0.4 * 1 A PD1 18 W With infinite heatsink PD2 1.5 W Stand-alone without heatsink Tj -40 to +125 C Operating temperature TOP -40 to +115 C Storage temperature Tstg -40 to +125 C Output control terminal voltage P1.7 0.7 * 4 = 6.80.7 One minute 3.9 (4.3) 8.2 0.7 V 1 1. VIN 2. VC (on/off) 3. GND 4. VO1 5. VO2 A Output current 1 2 3 4 5 a: Part No. b: Lot No. Power Dissipation Junction Temperature Junction to case thermal resistance j-c 5.5 C/W Junction to ambient-air thermal resistance j-a 66.7 C/W (Forming No. 1101) Equivalent Circuit Diagram Stand-alone without heatsink VO1 VIN 1 4 DRIVE OCP TSD Electrical Characteristics DET ERR (Tj=25C, VIN =14V unless otherwise specified) REF 5 Ratings Parameter Symbol min typ Unit max VO2 Conditions OCP VIN 6* CH1 VO1 4.80 5.00 5.20 V IO =0.05A CH2 VO2 4.80 5.00 5.20 V IO =0.3A 0.1 V IO1 =0 to 0.05A IO2 =0 to 0.3A Input voltage 35 * 1 V OVP DRIVE 2 DET ERR Output voltage Channel-channel voltage difference (VO1 --VO2) Dropout voltage Line regulation VO -0.1 CH1 VDIF1 1.0 V IO1 0.05A CH2 VDIF2 1.0 V IO2 0.4A CH1 VO LINE1 10 30 mV VIN =6 to 18V, IO =0.05A CH2 VO LINE2 10 30 mV VIN =6 to 18V, IO =0.3A CH1 VO LOAD1 30 70 mV IO1=0 to 0.05A CH2 VO LOAD2 40 70 mV IO2 =0 to 0.3A 3 2 VC GND CONT Standard Circuit Diagram D3 Load regulation D2 VIN CH1 RREJ1 54 dB f =100 to 120Hz CH2 RREJ2 54 dB f =100 to 120Hz mA IO1=0A, VC =0V SI-3101S D1 Ripple rejection 2 Quiescent circuit current Overcurrent protection starting current 0.8 Iq CH1 I (S1) 1 CIN 3 0.1 * 0.5 * 3 I (S1) 2 VCH 4.2 4.5 4.8 V Output OFF VCL 3.2 3.5 3.8 V Output ON I CH 100 A VC =4.8V Output OFF I CL A VC =3.2V Output control voltage Overvoltage protection starting voltage VOVP 35 * 4 V Thermal protection starting temperature TTSD 130 * 5 C Notes: *1. Since P D (max) = (VIN - VO) * IO1 + (VIN -VO2) * IO2 = 18 (W), VIN (max), IO1 (max) and IO2 (max) may be limited depending on operating conditions. Refer to the Ta--PD curve to compute the corresponding values. *2. Refer to the dropout voltage. *3. IS1 rating shall be the point at which the output voltage VO1 or VO2 (VIN = 14V, IO1 = 0.05A or IO2 = 0.3A) drops to -5%. *4. Overvoltage protection circuit is built only in CH2 (VO2 side). *5. The indicated temperatures are junction temperatures. *6. All terminals, except VIN and GND, are open. 10 4 VO1 + GND CO1 + CO2 A CH2 -100 3 A Output ON Output control current VC + VO2 5 1 CO1 : CO2 : *1 CIN : Output capacitor (47 to 100F, 50V) Output capacitor (47 to 100F, 50V) Input capacitors (approx. 47F). Tantalum capacitors are recommended for CO1, CO2 and CIN, especially at low temperatures. *2 D1, D2, D3 : Protection diode. Required as protection against reverse biasing between input and output. (Recommended diode: Sanken EU2Z.) SI-3101S Electrical Characteristics Line Regulation (2) 5.1 Load Regulation (1) 5.1 5.1 VC = 5 (V) I O1 = 0 (A) I O1 = 0mA Output voltage VO (V) 50mA 5.0 70mA 4.9 I O2 = 0A 0.3A 5.0 0.5A 5 10 15 20 0 0 25 V IN = 6V 14V 5 Input voltage V IN (V) 10 15 20 0 25 0 10 Input voltage V IN (V) Load Regulation (2) 20 30 40 50 60 70 Output current IO (mA) Rise Characteristics 5.1 22V 5.0 4.9 4.9 0 0 Quiescent Circuit Current 6 VC = 5 (V) I O1 = 0 (A) 10 V IN = 6V,14V 5.0 I O1 = 0 (A) Vc = 0 (V) 5 Output voltage VO (V) Output voltage VO (V) VC = 5 (V) I O2 = 0 (A) 22V Quiescent current lq (mA) Output voltage VO (V) VC = 5 (V) IO2 = 0 (A) Output voltage VO (V) Line Regulation (1) Load resistor 100 4 3 2 71.4 5 1 4.9 0.1 0.2 0.3 0.4 0.5 0 0.6 0 6 6 5 5 6V 3 2 OFF ON 8 0 10 0 0 1 2 3 4 5 IO2 = 0 (A) VC = 5 (V) 3 4.5V 2 VIN = 6V 14V 22V I O1 = 0 (A) VC = 5 (V) 3 2 1 0 0 0.05 0.1 0.15 0 0.1 0.2 0.3 0.4 Ta--PD Characteristics 6 20 VIN = 6 (V) I O1 = I O2 = 5 (mA) With silicone grease G746 (Shin-Etsu Chemical) Heatsink: aluminum With infinite heatsink Output voltage VO (V) 5 4 3 2 VO1 4 IO1 = I O2 = 5 (mA) VC = 5 (V) 3 VO2 2 1 1 0 0 0.5 0.6 0.7 0.8 Output current IO (A) Overvoltage Protection Characteristics 5 20 4.5V 4 Output current IO (A) Thermal Protection Characteristics 15 Overcurrent Protection Characteristics (2) 5 V IN = 6V 14V 22V 4 0 6 10 6 Output ON/OFF control voltage VC (V) 6 5 0 Input voltage VIN (V) 1 1 Output voltage VO1 (V) 6 Overcurrent Protection Characteristics (1) Output voltage VO1 (V) Output voltage VO2 (V) ON/OFF Control Characteristics V IN = 14V, 22V 4 Input voltage VIN (V) Output current IO (A) 4 2 Output voltage VO2 (V) 0 Power Dissipation PD (W) 0 15 200 * 200 * 2mm (2.3C/W) 10 100 * 100 * 2mm (5.2C/W) 75 * 75 * 2mm (7.6C/W) 5 Without heatsink 0 130 140 150 160 Ambient temperature Ta (C) Note on Thermal Protection Characteristics: The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time. 10 20 30 Input voltage VIN (V) 40 0 --30 --20 0 20 40 60 80 100 115 Operating temperature Ta (C) 11 Dropper Type Regulator ICs [2-output] SI-3102S External Dimensions (unit: mm) Single input dual output <sub output (5V/0.04A), main output (5V/0.1A)> Main output can be externally turned ON/OFF (with ignition switch, etc.) <most suitable as memory backup power supply> Low standby current ( 0.8mA) Low dropout voltage 1V Built-in dropping type overcurrent, overvoltage and thermal protection circuits TO220 equivalent 5-terminal full-mold miniature package 3.2 0.2 4.2 0.2 2.8 0.2 (17.9) 16.9 0.3 4.0 0.2 0.5 10.0 0.2 7.9 0.2 Features a 2.6 0.1 Ratings Unit DC input voltage VIN 35 V Battery reverse connection VINB -13 * 6 V Output control terminal voltage VC VIN V 5.0 0.6 (Ta=25C) Symbol 0.95 0.15 +0.2 Conditions 0.85 -0.1 (8.0) Parameter (4.6) Absolute Maximum Ratings (2.0) b +0.2 -0.1 0.45 CH1 IO1 0.04 * 1 A CH2 IO2 0.1 * 1 A Output current One minute 3.9 0.7 P1.7 0.7 * 4 = 6.8 0.7 1 PD1 22 W With infinite heatsink PD2 1.8 W Stand-alone without heatsink Junction temperature Tj -40 to +150 C Operating temperature TOP -40 to +105 C Storage temperature Tstg 2 3 4 1. VIN 2. VC (on/off) 3. GND 4. VO1 5. VO2 5 Power Dissipation -40 to +150 C Junction to case thermal resistance j-c 5.5 C/W Junction to ambient-air thermal resistance j-a 66.7 C/W (4.3) 8.2 0.7 a: Part No. b: Lot No. (Forming No. 1101) Equivalent Circuit Diagram Stand-alone without heatsink VO1 VIN 1 4 Parameter Symbol VIN Input voltage TSD (Tj = 25C, VIN = 14V unless otherwise specified) Ratings min typ 6 *2 max Unit 30 * 1 V Conditions REF VO1 4.80 5.00 5.20 V IO = 0.04A CH2 VO2 4.80 5.00 5.20 V IO = 0.1A 0.1 V IO1 =0 to 0.04A IO2 =0 to 0.1A 1.0 V IO1 0.04A IO2 0.1A OCP Output voltage Dropout voltage CH1 VO -0.1 VDIF1 5 VO2 CH1 Channel-channel voltage difference (VO1 --VO2) DET ERR CH2 VDIF2 1.0 V CH1 VO LINE1 10 50 mV VIN = 6 to 30V, IO = 0.04A CH2 VO LINE2 10 50 mV VIN = 6 to 30V, IO = 0.1A CH1 VO LOAD1 30 70 mV IO1 = 0 to 0.04A CH2 VO LOAD2 40 70 mV IO2 = 0 to 0.1A CH1 RREJ1 54 dB f = 100 to 120Hz CH2 RREJ2 54 OVP DRIVE Electrical Characteristics DRIVE OCP DET ERR 3 2 VC GND CONT Line regulation Load regulation Ripple rejection Quiescent circuit current Overcurrent protection starting current Iq 0.8 dB f = 100 to 120Hz mA IO1 = 0A, VC = 0V CH1 I (S1) 1 0.06 * 3 A CH2 I (S1) 2 0.15 * 3 A Output ON VCH 4.2 Output OFF VCL Output ON I CH Output OFF I CL Standard Circuit Diagram D3 D2 VIN 4.5 4.8 V 3.2 3.5 Output control current -100 Overvoltage protection starting voltage VOVP 30 * Thermal protection starting temperature TTSD 151 * 3.8 V 100 A VC = 4.8V + A VC = 3.2V CIN 4 V 5 C 2 VC Notes: *1. Since P D (max) = (VIN - VO) * IO1 + (VIN -VO2) * IO2 = 22 (W), VIN (max), IO1 (max) and IO2 (max) may be limited depending on operating conditions. Refer to the Ta--PD curve to compute the corresponding values. *2. Refer to the dropout voltage. *3. IS1 rating shall be the point at which the output voltage VO1 or VO2 (VIN = 14V, IO1 = 0.04A or IO2 = 0.1A) drops to -5%. *4. Overvoltage protection circuit is built only in CH2 (VO2 side). *5. The indicated temperatures are junction temperatures. *6. All terminals, except VIN and GND, are open. 12 SI-3102S D1 Output control voltage CO1 : CO2 : *1 CIN : VO2 5 1 3 4 VO1 + GND CO1 + CO2 Output capacitor (47 to 100F, 50V) Output capacitor (47 to 100F, 50V) Input capacitors (approx. 47F). Tantalum capacitors are recommended, for CO1, CO2 and CIN, especially at low temperatures. *2 D1, D2, D3 : Protection diode. Required as protection against reverse biasing between input and output. (Recommended diode: Sanken EU2Z.) SI-3102S Electrical Characteristics Line Regulation (1) Line Regulation (2) 5.10 Load Regulation (1) 5.10 5.10 VIN = VC IO2 = 5mA VIN = VC IO1 = 5mA VIN = VC 5.05 IO1 = 0A 20mA 40mA 5.00 4.95 4.90 5.05 IO2 = 0A 50mA 100mA 5.00 Output voltage VO (V) Output voltage VO (V) Output voltage VO (V) 5.05 4.95 4.90 4.85 5 10 15 20 25 30 35 4.95 4.90 4.85 0 VIN = 6V 14V 30V 5.00 4.85 0 5 Input voltage V IN (V) 10 15 20 25 30 35 0 10 Load Regulation (2) Rise Characteristics 5.10 20 30 12 5 10 VC = 0V IO1 = 0A VIN = 6V,14V 5.00 4.95 30V 4.90 4 IO1 = 0A 20mA 40mA 3 2 1 4.85 0 40 60 80 1 2 3 4 5 7 0 OFF ON 2 0 4 VIN = 6V 14V 30V 3 2 6 4 VIN = 6V 14V 30V 3 2 0 0 20 40 60 80 100 120 0 0.1 Output current IO (mA) VIN = VC IO2 = 5mA With infinite heatsink 2 Power Dissipation PD (W) Output voltage VO (V) 5 3 VO1 4 3 VO2 2 1 1 0 100 0 26 0.4 0.5 25 VIN = 6V IO1 = IO2 = 5mA 4 0.3 Ta--PD Characteristics 6 5 0.2 Output current IO2 (A) Overvoltage Protection Characteristics 6 35 1 Output ON/OFF control voltage VC (V) Thermal Protection Characteristics 30 5 0 5 25 VIN = VC IO1 = 5mA 1 1 4 20 6 Output voltage VO2 (V) Output voltage VO1 (V) 4 3 15 Overcurrent Protection Characteristics (2) 5 2 10 VIN = VC IO2 = 5mA 5 1 5 Input voltage VIN (V) 6 VIN = 14V IO2 = 5mA Output voltage VO2 (V) 6 Overcurrent Protection Characteristics (1) 6 0 4 Input voltage VIN (V) ON/OFF Control Characteristics 3 6 0 0 100 8 2 Output current IO (mA) Output voltage VO1 (V) Quiescent current lq (mA) Output voltage VO (V) Output voltage VO (V) 5.05 20 50 Quiescent Circuit Current 6 VIN = VC 0 40 Output current IO (mA) Input voltage VIN (V) With silicone grease G746 (Shin-Etsu Chemical) Heatsink: aluminum 20 200 * 200 * 2mm (2.3C/W) 15 100 * 100 * 2mm (5.2C/W) 10 75 * 75 * 2mm (7.6C/W) 5 Without heatsink 120 140 180 200 220 240 Ambient temperature Ta (C) Note on Thermal Protection Characteristics: The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time. 28 30 32 34 Input voltage VIN (V) 36 38 0 -40 -20 0 20 40 60 80 100 120 140 160 Operating temperature Ta (C) 13 Switching Type Regulator ICs SI-3201S External Dimensions (unit: mm) Features Output current of 3A (Ta = 25C, VIN = 8 to 18V) High efficiency of 82% (VIN = 14V, I O = 2A) Requires 5 external components only Built-in reference oscillator (60kHz) Phase internally corrected Output voltage internally corrected Built-in overcurrent and thermal protection circuits Built-in soft start circuit 3.2 0.2 4.2 0.2 2.8 0.2 (17.9) 16.9 0.3 7.9 0.2 4.0 0.2 0.5 10.0 0.2 a 2.6 0.1 5.0 0.6 (2.0) b 0.95 0.15 Symbol Ratings Unit +0.2 Input voltage VIN 35 V Output voltage IO 3 A 0.85 -0.1 Conditions (8.0) Parameter (Ta=25C) (4.6) Absolute Maximum Ratings +0.2 -0.1 0.45 SWOUT terminal voltage VSWOUT -1 V PD1 22 W 1.8 W Tj -40 to +150 C Storage temperature Tstg -40 to +125 C Junction to case thermal resistance j-c 5.5 C/W Junction to ambient-air thermal resistance j-a 66.7 C/W Output current Operating temperature 3 4 5 a: Part No. b: Lot No. (Forming No. 1101) Standard Circuit Diagram VIN SI-3201S 1 VIN VIN typ 8 max 18 Unit Conditions IO 0.5 3 A Top -40 +85 C e f C1 V D1 + g + 5 SS h C3 Ta--PD characteristics VO SWOUT b d L1 2 SW Tr a c Ratings Symbol min Input voltage 2 Stand-alone Recommended Operating Conditions Parameter 1. VIN 2. SWOUT 3. GND 4. VS 5. SS With infinite heatsink 1 PD2 (4.3) 8.2 0.7 Power Dissipation Junction temperature 3.9 0.7 P1.7 0.7 *4 = 6.8 0.7 GND C2 VS 4 i 3 GND Electrical Characteristics Parameter Output voltage (VIN = 14V, I OUT = 2A, Tj = 25C unless otherwise specified) Ratings Symbol VO min typ max 4.80 5.00 Unit Conditions 5.20 V Line regulation VO LINE 100 mV VIN = 8 to 18V Load regulation VO LOAD 50 mV IO = 0.5 to 3A Efficiency *1 Oscillation frequency f OSC Quiescent circuit current Iq Overcurrent protection starting current IS Soft *3 start terminal % 82 Low level voltage VSSL Source current when low I SSL Discharge resistance RDIS 50 60 70 kHz 5 10 mA 3.1 15 A 25 200 IO = 0A *2 0.2 V 35 A VSSL = 0.2V k VIN = 0V Notes: *1. Efficiency is calculated by the following equation: VO * I O = * 100 (%) VIN * I IN *2. A dropping-type overcurrent protection circuit is built in the IC. *3. An external voltage may not be applied to the soft start terminal. As shown in the diagram to the right, use this IC in the soft start mode with a capacitor or in the open-collector drive mode with a transistor. Leave the soft start terminal open when not using it since it is already pulled up in the IC. GND C1: 1000F C2: 1000F L 1: 250H D1: RK46 (Sanken) a: Internal power supply b: Thermal protection c: Reference oscillator d: Reset e: Latch & driver f : Comparator g: Overcurrent protection h: Error amplifier i : Reference voltage Cautions: (1) A high-ripple current flows through C1 and C2. Use high-ripple type 1000F or higher capacitors with low internal resistance. Refer to the respective data books for more information on reliability and electrical characteristics of the capacitor. (2) C3 is a capacitor used for soft start. (3) L1 should be a choke coil with a low core loss for switching power supplies. (4) Use a Schottky barrier diode for D1 and make sure that the reverse voltage applied to the 2nd terminal (SWOUT terminal) is within the maximum ratings (-1V). If you use a fast-recovery diode, the recovery voltage and the ON forward voltage may cause a reversed-bias voltage exceeding the maximum ratings to be applied to the 2nd terminal (SWOUT terminal). Applying a reversed-bias voltage exceeding the maximum rating to the 2nd terminal (SWOUT terminal) may damage the IC. (5) The 4th terminal (VS) is an output voltage detection terminal. Since this terminal has a high impedance, connect it to the positive (+) terminal of C2 via the shortest possible route. (6) Leave the 5th terminal (soft start terminal) open when not using it. It is pulled up internally. (7) To ensure optimum operating environment, connect the highfrequency current line with minimum wiring length. SI-3201S 5 SS C3 14 SI-3201S 5 SS SI-3201S 5 SS C3 SI-3201S Electrical Characteristics Load Regulation 5.10 5.00 Output voltage VO (V) Io = 0A = 1A = 2A = 3A 4.95 4.90 6 5.10 5 5.05 5.00 VIN =18V = 10V = 7V 4.95 4.90 4.85 4.85 0 5 10 15 20 25 30 0 35 0.5 Input voltage VIN (V) 6 80 5 Output voltage VO (V) (%) Efficiency 1.0 1.5 2.0 2.5 V IN = 18V = 10V = 7V 60 50 40 1.5 0 2 2.0 2.5 3.0 Output current IO (A) 4 6 8 10 Overcurrent Protection Temperature Characteristics 6 5 VIN =18V = 10V = 7V 4 3 2 4 TC = +100, 25, --20C 3 2 1 0 0 1.0 2 Input voltage VIN (V) 1 0.5 3 0 3.0 Overcurrent Protection Characteristics 90 0 4 Output current IO (A) Efficiency Curve 70 Io = 0A = 1A = 2A = 3A 1 Output voltage VO (V) Output voltage VO (V) 5.05 Rise Characteristics 5.15 Output voltage VO (V) Line Regulation 0 1.0 2.0 3.0 Output current IO (A) 4.0 5.0 0 1.0 2.0 3.0 4.0 5.0 Output current IO (A) Ta--PD Characteristics 25 With silicone grease Heatsink: aluminum Power Dissipation PD (W) With infinite heatsink 20 15 10 5 0 -40 0 40 80 120 160 Operating temperature Ta (C) 15 High-side Power Switch ICs [With Diagnostic Function] SI-5151S External Dimensions (unit: mm) 4.2 0.2 3.2 0.2 10 0.2 16.9 0.3 4 0.2 2.8 0.2 20 max Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply TO220 equivalent full-mold package not require insulation mica 7.9 0.2 Features 2.6 0.1 a Parameter Symbol +0.2 0.94 0.15 (Ta=25C) Ratings Unit Power supply voltage VB 40 V Input terminal voltage VIN -0.3 to VB V DIAG terminal voltage VDIAG 6 V R-end Conditions +0.2 +0.2 0.45 -0.1 0.85 -0.1 Collector-emitter voltage P1.7 0.1 * 4 = 6.8 VCE 40 V IO 1.8 A PD1 18 W With infinite heatsink (Tc = 25C) PD2 1.5 W Stand-alone without heatsink (Tc = 25C) Junction temperature Tj -40 to +125 C Operating temperature TOP -40 to +100 C Storage temperature Tstg -40 to +125 C Output current Power Dissipation 3.6 0.5 Absolute Maximum Ratings 2.9 -0.3 b 4 0.6 1. GND 2. VIN 3. VO 4. DIAG 5. VB a: Part No. b: Lot No. (Forming No. 1123) Standard Circuit Diagram VB 5 Electrical Characteristics Symbol Operating power supply voltage VBopr Quiescent circuit current min Iq Saturation voltage of output transistor VCE (sat) Output leak current IO, leak typ 6.0 max 30 5 Unit VO SI-5151S Conditions VIN 2 4 mA 0.5 V 1.0 V 2 mA V VBopr = 6 to 16V VBopr = 6 to 16V LS-TTL or CMOS VBopr = 14V, VIN = 0V IO 1.0A, VBopr = 6 to 16V VCC DIAG V 12 PZ 3 5.1k 1 Load Parameter (Ta=25C unless otherwise specified) Ratings IO 1.8A, VBopr = 6 to 16V VCEO = 16V Output ON VIH 2.0 VB Output OFF VIL -0.3 0.8 V Output ON I IH 1 mA VIN = 5V VIN = 0V GND Truth table VIN VO Input voltage H H L L Input current Output OFF I IL -0.1 mA Overcurrent protection starting current IS 1.9 A Thermal protection starting temperature TTSD 125 Open load detection resistor Ropen VBopr = 14V, VO = VBopr -1.5V Diagnostic Function C 145 30 k VBopr = 6 to 16V TON 8 30 s VBopr = 14V, IO = 1A TOFF 15 30 s VBopr = 14V, IO = 1A Output transfer time 6 V VCC = 6V VDL 0.3 V VCC = 6V, IDD = 2mA TPLH 30 s VBopr = 14V, IO = 1A TPHL 30 s VBopr = 14V, IO = 1A VDH 4.5 DIAG output voltage DIAG output transfer time Minimum load inductance L 1 Normal Shorted load Overheat Normal VIN VO DIAG mH VO VIN DIAG L L L H H H L H H Open load H H H L L L Shorted load H L L L L L Overheat H L L DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal. Mode Note: * The rule of protection against reverse connection of power supply is VB = -13V, one minute (all terminals except, VB and GND, are open). 16 Open load Normal SI-5151S Electrical Characteristics Quiescent Circuit Current Circuit Current 10 Saturation Voltage of Output Transistor 1.0 40 Ta = --40C 30 25C --40C 20 VCE (sat) (V) 95C 5 IB (mA) Iq (mA) Ta = 25C Ta = 95C V B= 6 to 16V 95C 0.5 --40C 10 25C 0 0 10 20 30 0 40 0 0 10 20 VB (V) 50 0 14 14 VB = 14V 12 10 VO (V) VO (V) 8 8 8 6 6 6 4 4 4 2 2 2 0 0 0 1 2 0 0 3 1 IO (A) 2 0 3 2 3 IO (A) Input Current (Output ON) 20 Input Current (Output OFF) 2 1.0 15 1 IO (A) Threshold input voltage Ta = 95C VB = 14V 12 10 10 3 16 14 VB = 14V 2 Overcurrent Protection Characteristics (Ta=100C) 16 12 1 IO (A) Overcurrent Protection Characteristics (Ta=25C) 16 VO (V) 40 VB (V) Overcurrent Protection Characteristics (Ta= -40C) VIN = 0V VB = 14V VIN = 5V VB = 14V 25C -40C 10 IIL (A) VB = 16V I O = 1A IIH (mA) VO (V) 30 0.5 1 5 0 -40 0 0 1 2 2.2 0 50 VIN (V) Ta (C) Saturation Voltage of DIAG Output 0 50 100 Ta (C) 16 VB = 14V Vo 14 0.1 12 6 10 5 DIAG (V) VO (V) VDG (sat) (V) 0 -40 Thermal Protection Characteristics 0.2 8 6 0 -40 100 DIAG VB = 14V IO = 10mA 4 3 4 2 2 1 0 0 50 Ta (C) 100 0 50 100 150 Ta (C) 17 High-side Power Switch ICs [With Diagnostic Function] SI-5152S External Dimensions (unit: mm) 4.2 0.2 3.2 0.2 10 0.2 16.9 0.3 4 0.2 2.8 0.2 20 max Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply Tj = 150C guaranteed TO220 equivalent full-mold package not require insulation mica 7.9 0.2 Features 2.6 0.1 a +0.2 2.9 -0.3 b 0.94 0.15 Parameter R-end (Ta = 25C) Symbol Ratings Unit Power supply voltage VB 40 V Input terminal voltage VIN -0.3 to VB V DIAG terminal voltage VDIAG 6 V VCE 40 V Conditions +0.2 +0.2 0.45 -0.1 0.85 -0.1 Collector-emitter voltage Output current P1.7 0.1 * 4 = 6.8 4 0.6 1. GND 2. VIN 3. VO 4. DIAG 5. VB IO 1.8 A PD1 22 W With infinite heatsink (Tc=25C) PD2 1.8 W Stand-alone without heatsink Junction temperature Tj -40 to +150 C Operating temperature TOP -40 to +100 C Storage temperature Tstg -40 to +150 C 3.6 0.5 Absolute Maximum Ratings a: Part No. b: Lot No. (Forming No. 1123) Power Dissipation Standard Circuit Diagram VB 5 VO (Ta=25C unless otherwise specified) SI-5152S Ratings Parameter Symbol Operating power supply voltage VBopr Quiescent circuit current min 5 Iq Saturation voltage of output transistor VCE (sat) Output leak current IO, leak typ 6.0 max Unit 30 V 12 mA 0.5 V 1.0 V 2 mA Conditions VIN 2 VCC DIAG 4 VBopr = 14V, VIN = 0V PZ 3 LS-TTL or CMOS 5.1k Load Electrical Characteristics 1 IO 1.0A, VBopr = 6 to 16V IO 1.8A, VBopr = 6 to 16V Output ON VIH 2.0 VB V VBopr = 6 to 16V Output OFF VIL -0.3 0.8 V VBopr = 6 to 16V Output ON I IH 1 mA VIN = 5V VIN = 0V GND Truth table VO VCEO = 16V, VIN = 0V VIN Input voltage H H L L Input current Output OFF I IL -0.1 mA Overcurrent protection starting current IS 1.9 A VBopr = 14V, VO = VBopr -1.5V Thermal protection starting temperature TTSD 150 C VBopr 6V k VBopr = 6 to 16V Open load detection resistor Normal Ropen 30 TON 8 30 s VBopr = 14V, IO = 1A TOFF 15 30 s VBopr = 14V, IO = 1A IDIAG 100 A VCC = 6V, VBopr = 6 to 16V VDL 0.3 V VCC = 6V, VBopr = 6 to 16V, IDO = 2mA TPLH 30 s VBopr = 14V, IO = 1A s VBopr = 14V, IO = 1A Output transfer time DIAG output leak current Saturation voltage of DIAG output DIAG output transfer time TPHL Minimum load inductance Diagnostic Function L 30 1 mH Open load Overheat Normal VO DIAG Mode Normal Note: * The rule of protection against reverse connection of power supply is VB = -13V, one minute (all terminals except, VB and GND, are open). Shorted load VIN Open load Shorted load Overheat VIN L H L H L H L H VO L H H H L L L L DIAG L H H H L L L L DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal. 18 SI-5152S Electrical Characteristics Quiescent Circuit Current Circuit Current 10 Saturation Voltage of Output Transistor 1.0 40 Ta = -40C 30 -40C 95C 5 25C 20 VCE (sat) (V) IB (mA) Iq (mA) Ta = 25C Ta = 95C VB = 6 to 16V 95C 0.5 -40C 10 25C 0 0 10 20 30 0 40 0 0 10 20 VB (V) Overcurrent Protection Characteristics (Ta = -40C) 50 0 16 14 14 VB = 14V 12 10 VO (V) VO (V) 10 8 8 6 6 6 4 4 4 2 2 2 0 0 0 2 0 0 3 1 IO (A) 2 0 3 2 3 IO (A) Input Current (Output ON) 20 Input Current (Output OFF) 2 1.0 15 1 IO (A) Threshold input voltage Ta = 95C VB = 14V 12 10 1 3 Overcurrent Protection Characteristics (Ta=100C) VB = 14V 8 2 Overcurrent Protection Characteristics (Ta=25C) 16 12 1 IO (A) 14 VO (V) 40 VB (V) 16 VIN = 0V VB = 14V VIN = 5V VB = 14V 25C -40C 10 IIL (A) VB = 16V IO = 1A IIH (mA) VO (V) 30 0.5 1 5 0 0 1 2 2.2 VIN (V) 0 -40 0 50 Ta (C) 100 0 -40 0 50 100 Ta (C) Saturation Voltage of DIAG Output 0.2 VDL (V) VB = 14V 0.1 0 -40 0 50 100 Ta (C) 19 High-side Power Switch ICs [With Diagnostic Function] SI-5155S External Dimensions (unit: mm) 4.2 0.2 3.2 0.2 10 0.2 16.9 0.3 4 0.2 2.8 0.2 20 max Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply Tj = 150C guaranteed TO220 equivalent full-mold package not require insulation mica 7.9 0.2 Features 2.6 0.1 a +0.2 2.9 -0.3 b 0.94 0.15 Parameter R-end (Ta=25C) Symbol Ratings Unit Power supply voltage VB -13 to +40 V Input terminal voltage VIN -0.3 to VB V DIAG terminal voltage VDIAG 6 V VCE 40 V Conditions +0.2 +0.2 0.45 -0.1 0.85 -0.1 Collector-emitter voltage Output current P1.7 0.1 * 4 = 6.8 4 0.6 1. GND 2. VIN 3. VO 4. DIAG 5. VB IO 2.5 A PD1 22 W With infinite heatsink (Tc=25C) PD2 1.8 W Stand-alone without heatsink Junction temperature Tj -40 to +150 C Operating temperature TOP -40 to +100 C Storage temperature Tstg -40 to +150 C 3.6 0.5 Absolute Maximum Ratings a: Part No. b: Lot No. (Forming No. 1123) Power dissipation Standard Circuit Diagram VB 5 VO (Ta=25C unless otherwise specified) SI-5155S Ratings Parameter Symbol Operating power supply voltage VBopr Quiescent circuit current min 6.0 Iq Saturation voltage of output transistor VCE (sat) Output leak current IO, leak typ 5 max Unit 30 V 12 mA 0.3 V 0.72 V 2 mA VIN 2 Conditions LS-TTL or CMOS VCC DIAG 4 VBopr = 14V, VIN = 0V PZ 3 5.1k 1 Load Electrical Characteristics IO 1.0A, VBopr = 6 to 16V IO 2.5A, VBopr = 6 to 16V Output ON VIH 2.0 VB V VBopr = 6 to 16V Output OFF VIL -0.3 0.8 V VBopr = 6 to 16V Output ON I IH 1 mA VIN = 5V Output OFF I IL -0.1 mA VIN = 0V IS 2.6 A VBopr = 14V, VO = VBopr -1.5V TTSD 150 C VBopr 6V k VBopr = 6 to 16V GND Truth table VIN VO VCEO = 16V, VIN = 0V Input voltage H H L L Input current Overcurrent protection starting current Thermal protection starting temperature Open load detection resistor Ropen 30 TON 8 30 s VBopr = 14V, IO = 1A TOFF 15 30 s VBopr = 14V, IO = 1A 6 V VCC = 6V, VBopr = 6 to 16V Output transfer time VDH 4.5 Diagnostic Function Normal Open load Shorted load Overheat Normal VIN VO DIAG output voltage VDL 0.3 V VCC = 6V, VBopr = 6 to 16V, IDO = 2mA TPLH 30 s VBopr = 14V, IO = 1A s VBopr = 14V, IO = 1A DIAG output transfer time TPHL Minimum load inductance L 30 1 mH DIAG Mode Normal Note: * The rule of protection against reverse connection of power supply is VB = -13V, one minute (all terminals except, VB and GND, are open). Open load Shorted load Overheat VIN L H L H L H L H VO L H H H L L L L DIAG L H H H L L L L DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal. 20 SI-5155S Electrical Characteristics Quiescent Circuit Current Circuit Current Saturation Voltage of Output Transistor 2 Ta= -40C 25C 150C 5 40 Ta = -40C 30 25C 20 VCE (sat) (V) 50 IB (mA) Iq (mA) 10 150C Ta = 125C 1 25C VB = 6 to 16V 10 0 0 10 20 30 -40C 0 0 40 10 20 30 0 40 0 1 2 3 VB (V) VB (V) IO (A) Overcurrent Protection Characteristics (Ta= -40C) Overcurrent Protection Characteristics (Ta=25C) Overcurrent Protection Characteristics (Ta =125C) 20 20 20 VB = 18V 16 8 16 8 8V 4 1 3 2 4 8 8V 4 6V 6V 4 0 5 0 1 3 2 IO (A) 4 0 5 0 1 2 3 IO (A) Threshold input voltage 5 10 0.8 4 0.6 3 I IL (A) I IH (mA) VB = 16V IO = 1A VB = 14V VIN = 0V VB = 14V VIN = 5V 15 5 Input Current (Output OFF) 1.0 Ta = 125C 25C -40C 4 IO (A) Input Current (Output ON) 20 VO (V) 12 8V 6V 0 14V 14V 12 VO (V) 14V 12 VO (V) VO (V) 16 0 VB = 18V VB = 18V 0.4 2 5 0.2 0 0 1 0 -50 2 1 0 VIN (th) (V) 50 100 0 -50 150 Output Terminal Leak Current 0.3 0.2 Ta (C) 150 0 -50 VO 10 VDIAG 5 0.1 100 VB = 14V VDIAG = 5V IO = 10mA 15 VO (V) VDL (V) IO leak (mA) 0.4 50 150 20 VB = 14V IDIAG = 2mA 1 100 Thermal Protection Characteristics 0.5 VB = 14V 0 50 Ta (C) Saturation Voltage of DIAG Output 2 0 -50 0 Ta (C) 0 0 50 Ta (C) 100 150 0 50 100 150 200 Ta (C) 21 High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5153S External Dimensions (unit: mm) 4.2 0.2 3.2 0.2 10 0.2 16.9 0.3 4 0.2 2.8 0.2 2.6 0.1 a +0.2 2.9 -0.3 b 20 max Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply Tj = 150C guaranteed Built-in Zener diode TO220 equivalent full-mold package not require insulation mica 7.9 0.2 Features 0.94 0.15 R-end Parameter (Ta=25C) Symbol Ratings Unit VB -13 to +40 V Input terminal voltage VIN -0.3 to VB V DIAG terminal voltage VDIAG 6 V VCE VB --VZ V IO 2.04 A PD1 22 W With infinite heatsink (Tc=25C) PD2 1.8 W Stand-alone without heatsink Tj -40 to +150 C Operating temperature TOP -40 to +100 C Storage temperature Tstg -40 to +150 C Power supply voltage Collector-emitter voltage Output current +0.2 +0.2 0.45 -0.1 0.85 -0.1 Conditions P1.7 0.1 * 4 = 6.8 4 0.6 1. GND 2. VIN 3. VO 4. DIAG 5. VB Refer to "Surge clamp voltage" in Electrical Characteristics 3.6 0.5 Absolute Maximum Ratings a: Part No. b: Lot No. (Forming No. 1123) Power Dissipation Junction temperature Standard Circuit Diagram VB 5 VO SI-5153S (Ta=25C unless otherwise specified) VIN 2 Ratings Parameter Symbol Operating power supply voltage VBopr min 6.0 Iq Quiescent circuit current Saturation voltage of output transistor VCE (sat) Output leak current IO, leak typ 5 max Unit 30 V 12 mA 0.47 V VCC DIAG 4 Conditions LS-TTL or CMOS 5.1k 1 Load Electrical Characteristics 3 VBopr = 14V, VIN = 0V IO 2.05A, VBopr = 6 to 16V 2 mA Output ON VIH 2.0 VB V VBopr = 6 to 16V Output OFF VIL -0.3 0.8 V VBopr = 6 to 16V Output ON I IH 1 mA VIN = 5V Output OFF I IL -0.1 mA VIN = 0V Overcurrent protection starting current IS 2.05 A VBopr = 14V, VO = VBopr -1.5V Thermal protection starting temperature TTSD 150 C VBopr 6V 30 k VBopr = 6 to 16V GND Truth table VIN VO VCEO = 16V, VIN = 0V Input voltage H H L L Input current Open load detection resistor Diagnostic Function Normal Open load Shorted load Overheat Normal VIN Ropen TON 8 30 s VBopr = 14V, IO = 1A TOFF 15 30 s VBopr = 14V, IO = 1A 6 V VCC = 6V, VBopr = 6 to 16V VCC = 6V, VBopr = 6 to 16V, IDO = 2mA Output transfer time VDH 4.5 VO DIAG DIAG output voltage VDL 0.3 V TPLH 30 s VBopr = 14V, IO = 1A TPHL 30 s VBopr = 14V, IO = 1A DIAG output transfer time Minimum load inductance Surge clamp voltage *1 L 1 VZ 28 mH 34 40 V IC = 5mA Note: *1. The Zener diode for surge clamping has an energy capability of 140 mJ (single pulse). * The rule of protection against reverse connection of power supply is VB = -13V, one minute. * This driver is exclusively used for ON/OFF control. 22 VIN DIAG VO L L L H H H L H H Open load H H H L L L Shorted load H L L L L L Overheat H L L DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal. Mode Normal SI-5153S Electrical Characteristics Quiescent Circuit Current Circuit Current 10 Saturation Voltage of Output Transistor 2 50 40 Ta= -40C 5 25C VCE (sat) (V) IB (mA) Iq (mA) Ta = -40C 30 25C 20 150C Ta = 125C 1 VB = 6 to 16V 150C 25C 10 0 0 10 20 0 0 40 30 -40C 10 20 30 0 40 0 1 3 2 VB (V) VB (V) IO (A) Overcurrent Protection Characteristics (Ta= -40C) Overcurrent Protection Characteristics (Ta =25C) Overcurrent Protection Characteristics (Ta=125C) 20 20 20 VB = 18V VB = 18V VB = 18V 15 15 15 10 14V 10 8V 5 0 0 1 2 3 4 0 5 5 0 1 3 2 IO (A) 4 0 5 0 1 5 0.8 4 0.6 3 I IL (A) I IH (mA) 10 VB = 14V VIN = 0V VB = 14V VIN = 5V VB = 16V IO = 1A 5 Input Current (Output OFF) 1.0 Ta = 150C 25C -40C 4 IO (A) Input Current (Output ON) 20 3 2 IO (A) Threshold Characteristics of Input Voltage 15 10 8V 8V 5 VO (V) VO (V) VO (V) VO (V) 14V 14V 0.4 2 5 0.2 0 0 1 0 -50 2 1 0 VIN (th) (V) 50 100 0 -50 150 Output Terminal Leak Current VB = 14V VDIAG = 5V IO = 10mA 15 0.3 VO (V) VDL (V) IO leak (mA) 0.4 0.2 Ta (C) 100 150 0 -50 VO 10 VDIAG 5 0.1 50 150 20 VB = 14V IDIAG = 2mA 1 100 Thermal Protection Characteristics 0.5 VB = 14V 0 50 Ta (C) Saturation Voltage of DIAG Output 2 0 -50 0 Ta (C) 0 0 50 Ta (C) 100 150 0 50 100 150 200 Ta (C) 23 High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5154S External Dimensions (unit: mm) 4.2 0.2 3.2 0.2 10 0.2 16.9 0.3 4 0.2 2.8 0.2 20 max Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply Tj = 150C guaranteed Built-in Zener diode TO220 equivalent full-mold package not require insulation mica 7.9 0.2 2.6 0.1 a b +0.2 2.9 -0.3 Features 0.94 0.15 R-end Absolute Maximum Ratings Symbol Ratings Unit VB -13 to +40 V Input terminal voltage VIN -0.3 to VB V DIAG terminal voltage VDIAG 6 V VCE VB -VZ V IO 2.5 A PD1 22 W With infinite heatsink (Tc=25C) Stand-alone without heatsink Power supply voltage Collector-emitter voltage Output current +0.2 +0.2 Conditions 0.45 -0.1 0.85 -0.1 P1.7 0.1 * 4 = 6.8 4 0.6 1. GND 2. VIN 3. VO 4. DIAG 5. VB Refer to "Surge clamp voltage" in Electrical Characteristics 3.6 0.5 Parameter (Ta=25C) a: Part No. b: Lot No. (Forming No. 1123) Power Dissipation PD2 1.8 W Junction temperature Tj -40 to +150 C Operating temperature TOP -40 to +100 C Storage temperature Tstg -40 to +150 C Standard Circuit Diagram VB 5 VO SI-5154S (Ta=25C unless otherwise specified) VIN 2 Ratings Parameter Symbol Operating power supply voltage VBopr min 6.0 Iq Quiescent circuit current Saturation voltage of output transistor VCE (sat) Output leak current IO, leak Output ON VIH typ 5 2.0 max Unit Conditions V 12 mA 0.3 V IO 1.0A, VBopr = 6 to 16V 0.72 V IO 2.5A, VBopr = 6 to 16V 2 mA VB V LS-TTL or CMOS VBopr = 14V, VIN = 0V VBopr = 6 to 16V Output ON I IH mA VIN = 5V Output OFF I IL -0.1 mA VIN = 0V Overcurrent protection starting current IS 2.6 A VBopr = 14V, VO = VBopr -1.5V Thermal protection starting temperature TTSD 150 C VBopr 6V 30 k VBopr = 6 to 16V 1 GND H H L L VBopr = 6 to 16V VIL V 5.1k 1 Truth table VIN VO VCEO = 16V, VIN = 0V Output OFF 0.8 VCC DIAG 4 30 Input voltage -0.3 3 Load Electrical Characteristics Input current Open load detection resistor Ropen TON 8 30 s VBopr = 14V, IO = 1A TOFF 15 30 s VBopr = 14V, IO = 1A Output transfer time 6 V VCC = 6V, VBopr = 6 to 16V VDL 0.3 V VCC = 6V, VBopr = 6 to 16V, IDO = 2mA TPLH 30 s VBopr = 14V, IO = 1A TPHL 30 s VBopr = 14V, IO = 1A VDH 4.5 DIAG output voltage DIAG output transfer time Minimum load inductance Surge clamp voltage *1 L 1 VZ 28 mH 34 40 V Normal Open load IC = 5mA Shorted load Overheat VIN VO DIAG Mode Normal Note: *1. The Zener diode for surge clamping has an energy capability of 200 mJ (single pulse). * The rule of protection against reverse connection of power supply is VB = -13V, one minute. * This driver is exclusively used for ON/OFF control. 24 Diagnostic Function Open load Shorted load Overheat VIN L H L H L H L H VO L H H H L L L L DIAG L H H H L L L L DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal. Normal SI-5154S Electrical Characteristics Quiescent Circuit Current Circuit Current Saturation Voltage of Output Transistor 2 Ta= -40C 25C 150C 5 40 Ta = -40C 30 25C 20 VCE (sat) (V) 50 IB (mA) Iq (mA) 10 150C Ta = 125C 1 25C VB = 6 to 16V 10 0 0 10 20 30 -40C 0 0 40 10 20 30 0 40 0 1 3 2 VB (V) VB (V) IO (A) Overcurrent Protection Characteristics (Ta= -40C) Overcurrent Protection Characteristics (Ta=25C) Overcurrent Protection Characteristics (Ta=125C) 20 20 20 VB = 18V 16 8 16 8 8V 4 1 3 2 4 8 8V 4 6V 4 0 5 0 1 2 IO (A) 3 4 0 5 6V 0 1 2 IO (A) Threshold input voltage I IH (mA) 10 VB = 14V VIN = 0V 0.8 4 0.6 3 I IL (A) 15 5 5 VB = 14V VIN = 5V Ta = 125C 25C -40C 4 Input Current (Output OFF) 1.0 VB = 16V IO = 1A 3 IO (A) Input Current (Output ON) 20 VO (V) 12 8V 6V 0 14V 14V 12 VO (V) 14V 12 VO (V) VO (V) 16 0 VB = 18V VB = 18V 0.4 2 5 0.2 0 0 1 0 -50 2 1 0 VIN (th) (V) 50 100 0 -50 150 Output Terminal Leak Current 0.3 0.2 Ta (C) 150 0 -50 VO 10 VDIAG 5 0.1 100 VB = 14V VDIAG = 5V IO = 10mA 15 VO (V) VDL (V) IO leak (mA) 0.4 50 150 20 VB = 14V IDIAG = 2mA 1 100 Thermal Protection Characteristics 0.5 VB = 14V 0 50 Ta (C) Saturation Voltage of DIAG Output 2 0 -50 0 Ta (C) 0 0 50 Ta (C) 100 150 0 50 100 150 200 Ta (C) 25 High-side Power Switch ICs [Surface-mount 2-circuits] SDH04 +0.15 0.75 -0.05 +0.15 b Power supply voltage VB -13 to +40 V Drive terminal applied voltage VD -0.3 to VB V VIN -0.3 to +7.0 V DIAG output applied voltage VDIAG -0.3 to +7.0 V DIAG output source current IDIAG 3 mA Voltage across power supply and drive terminal VB-D VB -0.4 V Output current IO 1.5 A Power dissipation PD 2.6 W Junction temperature Tj -40 to +150 C Operating temperature TOP -40 to +100 C Storage temperature Tstg -40 to +150 C 19.56 0.2 Conditions 3.6 0.2 Unit 1.4 0.2 Ratings 8 20.0max (Ta=25C) Symbol Input terminal voltage a Pin 1 4.0max Parameter 9 6.8max 6.3 0.2 8.0 0.5 0 to 0.15 9.8 0.3 16 0.3 -0.05 Absolute Maximum Ratings SMD-16A 0.89 0.15 2.54 0.25 0.25 3.0 0.2 Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent protection circuits Built-in protection against reverse connection of power supply Tj = 150C guaranteed Surface-mount full-mold package 1.0 0.3 External Dimensions (unit: mm) Features a: Part No. b: Lot No. Equivalent Circuit Diagram Without heatsink, all circuits operating The MIC is bound by the dotted lines. 9,12,16 IN1 * 2 Drive CONT. 11k typ. DIAG1 3 O.C.P DIAG DET. Electrical Characteristics VB 2 Pre. Reg. (VBopr =14V, Ta=25C unless otherwise specified) 1,15 14 T.S.D Out1 2 * D1 1 * Ratings Parameter Symbol Operating power supply voltage VBopr min typ max 16 6.0 Unit Conditions IN2 DIAG2 Quiescent circuit current Iq Threshold input voltage VINth Hi output I IN Lo output I IN 12 mA 0.8 3.0 V 1.0 mA VIN = 5V 0 100 A VIN = 0V 0.5 V 5 Input current IO (off) 2.0 mA Saturation voltage of DIAG output VDL 0.3 V IDIAG = 3mA 100 A VDIAG = 5V 30 k IDGH 1 Overcurrent protection starting current IS 1.6 A IO 1.0A, VBopr = 6 to 16V VO = 0V, VIN = 0V TON 8 30 s IO = 1A 15 30 s IO = 1A TPLH 10 30 s IO = 1A TPHL 15 30 s IO = 1A DIAG output transfer time Out2 *2 D2 1 * *2 GND [Abbreviations] Drive: Drive circuit CONT: ON/OFF circuit Pre.Reg: Pre-regulator DIAG.DET.: Diagnostic circuit O.C.P.: Overcurrent protection T.S.D.: Thermal protection *1. The base terminal (D terminal) is connected to the output transistor base. It is also connected to the control monolithic IC. Do not, therefore, apply an external voltage in operation. *2. SDH04 have two or three terminals of the same function (VB, Out1, Out 2, GND). The terminals of the same function must be shorted at a pattern near the product. VO = VBopr -1.9V TOFF Output transfer time 8,10 11 Output terminal sink current Ropen O.C.P DIAG DET. 4,5,13 VCE (sat) Open load detection resistor Drive CONT. 6 Lo output Saturation voltage of output transistor Leak current of DIAG output 7 11k typ. V Standard Circuit Diagram VB PZ Note: * The rule of protection against reverse connection of power supply is VB = -13V, one minute (all terminals except, VB and GND, are open). D1 Out SDH04 IN Diagnostic Function VCC DIAG GND Load 5.1k VB 3.0V GND GND VIN 0.8V Truth table VIN VO VOUT SHORT Is OPEN OPEN OVER VOLTAGE H L L GND TSD Note 1: A pull-down resistor (11 k typ.) is connected to the IN terminal. VOUT turns "L" when a high impedance is connected to the IN terminal in series. IO GND VDIAG Normal 26 H Shorted load Open load Overvoltage Overheat ERROR SIGNAL for CPU SDH04 Electrical Characteristics Quiescent Circuit Current (dual circuit) Circuit Current (single circuit) VIN = 0V 20 50 20 IB (mA) 30 125C 20 VIN = 0V 10 VO shorted VO open 10 Ta = -40C 60 25C 40 125C 20 VIN = 0V 40 30 0 0 46 10 20 VB (V) Saturation Voltage of Output Transistor 30 40 0 0 46 20 30 40 46 VB (V) Overcurrent Protection Characteristics (Ta=-40C) Overcurrent Protection Characteristics (Ta=25C) 20 20 Ta = 125C VB = 16V VB = 6V 10 VB (V) 1.5 VB = 18V 15 VB = 18V 15 25C VO (V) 1.0 VO (V) VCE (sat) (V) 80 25C 10 0 0 VIN = 5V 100 Ta = -40C 40 IB (mA) Iq (mA) Ta = -40C 25C 125C Circuit Current (dual circuit) VIN = 5V 14V 10 14V 10 0.5 -40C 5 5 6V 6V 0 0 1 0 3 2 0 1 2 IO (A) 3 0 4 0 1 2 IO (A) Overcurrent Protection Characteristics (Ta=125C) Threshold Characteristics of Input Voltage Ta = 125C 4 Input Terminal Source Current VB = 14V IO = 1A 15 20 3 IO (A) 25C VB = 14V 1.0 -40C VB = 18V 0.8 15 IIN (mA) VO (V) VO (V) 10 14V 10 0.6 Ta = 125C 25C -40C 0.4 5 5 0.2 6V 0 0 1 3 2 0 4 0 1 IO (A) VIN (V) Input Terminal Sink Current 0 0 2 4 6 8 10 VIN (V) Saturation Voltage of DIAG Output VB = 14V VIN= 0V 1.0 3 2 0.3 VB = 14V IDIAG = 3mA VDL (V) IINL (A) 0.2 0.5 0.1 0 -50 0 50 Ta (C) 100 150 0 -50 0 50 100 150 Ta (C) 27 High-side Power Switch ICs [Surface-mount 2-circuits] SPF5003 (under development) External Dimensions (unit: mm) Features Built-in diagnostic function to detect short and open circuiting of loads and output status signals DMOS 2ch output Allows ON/OFF using C-MOS logic level Built-in overcurrent and thermal protection circuits 12.2 0.2 +0.1 10.5 0.2 1.0 -0.05 16 Fin thickness (Ta=25C) Symbol Ratings Unit 1 Conditions 8 +0.15 1.27 0.25 Power supply voltage VB 35 Input terminal voltage VIN -0.3 to 7 V Input terminal current I IN 5 mA DG terminal voltage VDG -0.3 to 7 V DG terminal current I DG 5 mA Drain to source voltage V VDS VB -45 V Output current IO 1.8 A Power dissipation PD 2 W Source to drain Di forward current IF 0.8 A Channel temperature Tch 150 C Operating temperature TOP -40 to +105 C Storage temperature Tstg -40 to +150 C 0.4 -0.05 2.50.2 Parameter 2.0 -0.8 Absolute Maximum Ratings +0.2 7.5 0.2 9 +0.15 0.25 -0.05 Block Diagram (for one channel) VB Ta=25C Thermal Protect Bias Clamp Input Logic IN Charge Pump Lavel Shifting Current Limit Chopper DG Parameter Symbol Operating power supply voltage VB (opr) DG Logic (VB=14V, Ta=25C unless otherwise specified) Ratings min typ Unit max Open/Short Sense Conditions GND 35 Iq Quiescent circuit current Output ON resistance 1 mA 200 m IO=1A 300 m IO=1A, Ta=80C 50 100 A VOUT=0V 3.0 V Ta= -40 to +105C V Ta= -40 to +105C VIN=0V, VOUT=0V RDS (ON) IO, leak Output leak current Input threshold Output ON voltage Output OFF Output ON VIHth 1.4 2.0 VILth 1.0 1.8 70 I IH I IL Overcurrent protection starting current IS 12 1.9 3 Standard Connection Diagram 7,8 OUT1 15,16 A 200 Inpup current Output OFF OUT V VIN=5V VB 1 A VIN=0V (2, 3) 9 A VOUT =VO -1.5V (10,11) OUT2 5V SPF5003 DG1 6 5V Load 5.5 DG2 Load Electrical Characteristics 14 TTSD Load open detection threshold voltage *1 155 5 A 165 C 3 4.5 V 70 140 s RL=14, VO= -5V TOFF 35 90 s RL=14, VO *10% 20 A VDG= 5.5V VDGL 0.15 0.5 V IDG=1.6mA TPLH 70 140 s TPHL 45 120 s 1.5 I DG Low level DG output voltage DG output transfer time Note: *1 13 4 12 GND RIN C P U TON Vopen Output transfer time DG leak current VOUT=0V Vin 2 (7V max) RIN IN and RDG are needed to protect CPU and SPF5003 in case of reverse * Rconnection of VB terminal. * Make VB of 1Pin and 9Pin short from the fin to be plated by solder. Timing Chart VIN OFF VIN ON Normal VB * 1. Transient time is showed Wave Form below. VO open Normal Open load OCP Normal Normal Shorted load VIN VOUT Recommended Operating Conditions (for one channel) Wave Form Internal current limit min TSDON IOUT Ratings Parameter max Unit TSDOFF VIN DG Power supply voltage 5.5 16 V VIH 4 5.5 V VIL -0.3 0.9 V 1 A High inpidance VOUT -5V Output transfer time IO VOUT * 10% VOUT TON VDG * 90% VDG * 10% VDG 28 RIN 10 20 k RDG 10 20 k Mode TOFF Normal DG output transfer time TPLH RDG ILim Thermal shutdown operating temperature 5 RDG Internal current limit Vin 1 (7V max) TPHL Open load Shorted load Overheat VIN H L H L H L H L DG H L H H L L L L VO H L H H L (Limiting) L L L Normal TSD Overheat 29 High-side Power Switch ICs [Surface-mount 2-circuits] SPF5004 (under development) External Dimensions (unit: mm) Built-in diagnostic function to detect short and open circuiting of loads and output status signals DMOS 2ch output Allows ON/OFF using C-MOS logic level Built-in overcurrent and thermal protection circuits 17.280.2 +0.1 15.580.2 1.0 -0.05 24 Fin thickness 13 7.50.2 a Symbol Ratings Unit Power supply voltage VB 35 V Input terminal voltage VIN -0.3 to 7 V I IN 5 mA VDG -0.3 to 7 V mA Input terminal current DG terminal voltage +0.2 (Ta=25C) DG terminal current I DG 5 Drain to source voltage VDS VB -45 V Output current IO 2.5 A Power dissipation PD 2.7 W Source to drain Di forward current IF 0.8 A Channel temperature Tch 150 C Operating temperature TOP -40 to +105 C Storage temperature Tstg -40 to +150 C Conditions 1 12 +0.15 1.270.25 0.4 -0.05 2.50.2 Parameter 2.0 -0.8 b Absolute Maximum Ratings 10.50.3 Features +0.15 0.25 -0.05 a: Part No. b: Lot No. Block Diagram (for one channel) VB Ta=25C Thermal Protect Bias Clamp Input Logic IN Charge Pump Lavel Shifting Current Limit Chopper DG Parameter Symbol Operating power supply voltage VB (opr) (VB=14V, Ta=25C unless otherwise specified) Ratings min typ max Unit DG Logic Open/Short Sense Conditions GND 35 Iq Quiescent circuit current 1 mA 150 m IO =2A 250 m IO =1A, Ta=80C A VOUT =0V VIN=0V, VOUT=0V RDS (ON) Output ON resistance 50 IO, leak Output leak current Output ON VIH Output OFF VIL Output ON I IH 2.0 3.0 OUT V V Ta= -40 to +105C 1.8 V Ta= -40 to +105C 70 A Standard Connection Diagram Input voltage Inpup current Overcurrent protection starting current IS 1.0 2.6 ILim Internal current limit 10 2,3 A VOUT =VO -1.5V A VOUT =0V OUT1 14,15 VIN =5V VB 1 5V SPF5004 (4,5,6) 13 OUT2 DG1 24 5V Load 5.5 DG2 (16,17,18) Load Electrical Characteristics 12 Vopen 155 165 C 3 V TON 165 TOFF 60 s I DG Low level DG output voltage 20 A VDGL 0.15 V TPLH 70 s TPHL 45 s DG output transfer time 9 (7V max) GND RIN C P U s Output transfer time DG leak current Vin 1 (7V max) 21 RIN VB of 4Pin, 5Pin, 6Pin, 16Pin, 17Pin and 18Pin short from the fin * Make to be plated by solder. VDG =5.5V IDG =1.6mA Timing Chart VIN OFF VIN ON Normal VB VO open Normal Open load OCP Normal Normal Shorted load VIN Recommended Operating Conditions (for one channel) Parameter min Unit max TSDON IOUT Power supply voltage 5.5 16 V VIH 4 5.5 V VIL -0.3 0.9 V 1.15 A IO VOUT Internal current limit Ratings TSDOFF DG High inpidance Mode Normal RIN 10 20 k Open load RDG 10 20 k Shorted load Overheat 30 RDG TTSD Load open detection threshold voltage 11 RDG Thermal shutdown operating temperature 23 Vin 2 VIN H L H L H L H L DG H L H H L L L L VO H L H H L (Limiting) L L L Normal TSD Overheat 31 High-side Power Switch ICs [3-circuits] SLA2501M External Dimensions (unit: mm) 31 0.2 Ellipse 3.2 0.15 * 3.8 4.8 0.2 24.4 0.2 1.7 0.1 16 0.2 9.9 0.2 3.2 0.15 12.9 0.2 Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use (VCE (sat) 0.2V) Allows direct driving using LS-TTL and C-MOS logic levels Built-in Zener diode in transistor eliminates the need of (or simplifies) external surge absorption circuit Built-in independent overcurrent and thermal protection circuit in each circuit Built-in protection against reverse connection of power supply Tj = 150C guaranteed a b 2.45 0.2 6.4 0.5 Features +0.2 +0.2 +0.2 1.15 -0.1 0.55 -0.1 0.65 -0.1 14 * P2.03 0.1= (28.42) Absolute Maximum Ratings Parameter Power supply voltage (Ta=25C) Symbol Ratings Unit VB -13 to +40 V Drive terminal applied voltage VD -0.3 to VB V Input terminal voltage VIN -0.3 to +7.0 V DIAG output applied voltage VDIAG -0.3 to +7.0 V DIAG output source current IDIAG -3 mA Voltage across power supply and output terminal VB-O VB -34 V Voltage across power supply and drive terminal VB-D -0.4 V Conditions 31.3 0.2 a: Part No. b: Lot No. 1 23 Output current IO 1.5 A Output reverse current IO -1.8 A 15 Equivalent Circuit Diagram VB a ES/A 250 V C = 200pF, R = 0 PD 4.8 W Stand-alone without heatsink, all circuits operating Tj -40 to +150 C Operating temperature TOP -40 to +115 C Storage temperature Tstg -50 to +150 C Electrostatic resistance Power Dissipation Junction temperature Electrical Characteristics Symbol Operating power supply voltage VBopr Quiescent circuit current (per circuit) Circuit current (per circuit) MIC GND Unit 16 V Iq 0.8 1.6 mA Lo output IB 19.3 mA Tj = 25C VINth 0.8 VIN 3.7 Lo output VIN 3.0 VB V VCC V 1.5 I IN -1.0 Input current Lo output I IN VCE (sat) mA VCE (sat) 1.0 Output terminal sink current IO (off) 2.5 Surge clamp voltage VB-O 5 VIN = 5V V 5 mA Tj = 25C, VCEO = 14V V 34 39 V Tj = 25C, IC = 10mA 34 40 V IC = 5mA IDGH = -2mA, VBopr = 6 to 16V Saturation voltage of DIAG output VDL 0.4 V Leak current of DIAG output IDGH -100 A Open load detection resistor Ropen 5.5 k Overcurrent protection starting current IS 1.6 A VO = VBopr -1.5V C VBopr 6V 30 s IO = 1A 100 s IO = 1A TPLH 30 s IO = 1A s IO = 1A Maximum ON duty 100 Lo 1.0 D(ON) 0 mH 60 SLA2501M 4 FLT2 8 Diagnostic Function TON TPHL Minimum load inductance FLT1 IN2 VCC = 7V TOFF DIAG output transfer time 3 9 14 D1 D2 D3 FLT3 13 GND1 GND2 OUT1 OUT2 OUT3 6 11 2 10 15 IO 1.5A, VBopr = 6 to 16V 28 1 VB IN1 12 IN3 IO 1.2A, VBopr = 6 to 16V 29 TTSD 7 VIN = 0V 0.2 Output transfer time 32 V A 100 Saturation voltage of output transistor Thermal protection starting temperature e: Overcurrent protection circuit f: Diagnostic circuit g: Thermal protection circuit Standard Circuit Diagram Input voltage Hi output FLT a: Pre-regulator b: Overvoltage protection circuit c: Control circuit d: Driver circuit Conditions max Hi output Threshold input voltage OUT D typ 6.0 e g f (VBopr =14V, Tj= -40 to +150C unless otherwise specified) min d c Ratings Parameter b VIN % Note: * The Zener diode has an energy capability of 200 mJ (single pulse). * A start failure may occur if a short OFF signal of 10 ms or below is input in the VIN terminal. Normal VIN VO VDIAG Open load Shorted load Overheat Normal SLA2501M Electrical Characteristics Quiescent Circuit Current (single circuit) Circuit Current (single circuit) 5 Saturation Voltage of Output Transistor 40 1.0 VIN = 5V VIN = 0V V IN = 5V V B = 6 to 16V Ta = -40C 2 Ta = 25C Ta =125C VCE (sat) (V) 3 Ta =150C 30 Ta = -40C Ta = 25C Ta = 125C IB (mA) Iq (mA) 4 20 Ta = 125C Ta = -40C 0.5 Ta =25 C 10 1 0 0 10 20 0 40 30 0 10 20 30 0 40 0 1 2 3 3.5 VB (V) VB (V) IO (A) Overcurrent Protection Characteristics (Ta= -40C) Overcurrent Protection Characteristics (Ta=25C) Overcurrent Protection Characteristics (Ta=125C) 20 20 20 0 1 3 2 VO (V) 10 0 10 0 1 I OUT = 1A 3 2 4 Input Current (Output OFF) 20 V B = 14V V IN = 0V IIL (A) 0.5 0 --50 4 0 V IN = 0V 50 100 10 0 -50 125 0 Ta (C) VIN (V) Saturation Voltage of DIAG Output Output Reverse Current V B = 14V VIN = 5V I FLT = 3 (mA) 50 100 125 Ta (C) Thermal Protection 1.4 0.3 1 25C -40C 3 2 0 IO (A) VB = 14V 0 1 5 1.0 10 0 4 Input Current (Output ON) IIH (mA) VO (V) Ta = 125C 3 2 IO (A) Threshold Input Voltage VB = 16V 10 0 0 4 IO (A) 20 VB = 14V V B = 14V VO (V) VO (V) VB = 14V 20 10 V B = 16V IO = 10mA 1.2 VO 1.0 0.1 Ta = 25C 0.6 Ta = 125C 10 VFLT (V) Ta = --40C 0.8 VO (V) VF (V) VDL (V) 0.2 V FLT 5 0.4 0.2 0 -50 0 50 Ta (C) 100 125 0 0 1 2 IF (A) 3 4 0 0 60 100 160 180 Ta (C) 33 High-side Power Switch ICs [Surface-mount 3-circuits] SPF5007 (under development) External Dimensions (unit: mm) 17.280.2 Built-in diagnostic function to detect short and open circuiting of loads and output status signals DMOS 3ch output Allows ON/OFF using C-MOS logic level Built-in overcurrent and thermal protection circuits +0.1 15.580.2 1.0 -0.05 24 Fin thickness 13 7.50.2 a Parameter Symbol (Ta=25C) Ratings Unit Power supply voltage VB 35 V Input terminal voltage VIN -0.3 to 7 V I IN 5 mA VDG -0.3 to 7 V mA Input terminal current DG terminal voltage DG terminal current I DG 5 Drain to source voltage VDS VB -45 V Output current IO 1.8 A Power dissipation PD 2.7 W Source to drain Di forward current IF 0.8 A Channel temperature Tch 150 C Operating temperature TOP -40 to +105 C Storage temperature Tstg -40 to +150 C +0.2 1 Conditions 12 +0.15 1.270.25 0.4 -0.05 2.50.2 Absolute Maximum Ratings 2.0 -0.8 b 10.50.3 Features +0.15 0.25 -0.05 a: Part No. b: Lot No. Block Diagram (for one channel) VB Ta=25C, all circuit operating Thermal Protect Bias Clamp Input Logic IN Lavel Shifting Charge Pump Current Limit Chopper DG Electrical Characteristics Ratings Symbol min typ Unit Open/Short Sense Conditions max GND 35 IO, leak Output leak current mA m IO =1A 350 m IO =1A, Ta=80C 50 100 A VOUT =0V 3.0 V Ta= -40 to +105C V Ta= -40 to +105C Output ON VIHth 1.4 2.0 Output OFF VILth 1.0 1.8 Output ON I IH 70 200 Inpup current Output OFF Overcurrent protection starting current I IL IS Internal current limit ILim Thermal shutdown operating temperature TTSD Load open detection threshold voltage Vopen 12 1.9 155 1.5 VIN =0V, VOUT =0V 1 200 RDS (ON) Output ON resistance OUT V A A Standard Connection Diagram 1 OUT1 13 VB OUT2 5,6 10,11 20,21 OUT3 VIN =5V SPF5007 5V 4 DG1 VIN =0V 9 DG2 GND1 GND2 7 2 GND3 17 IN1 3 IN2 8 IN3 18 19 DG3 3 A VOUT =VO -1.5V 5 A VOUT =0V 165 C RDG RIN 3 4.5 V 70 140 s Load 5.5 Iq Quiescent circuit current Input threshold voltage VB (opr) Load Operating power supply voltage Load Parameter DG Logic (VB=14V, Ta=25C unless otherwise specified) RDG RDG RIN C P U RIN TON Output transfer time TOFF 35 I DG DG leak current Low level DG output voltage RL=14, VOUT =VB -5V 90 s RL=14, VB *10% 20 A VDG =5.5V VDGL 0.15 0.5 V TPLH 70 140 s TPHL 45 120 s DG output transfer time IDG =1.6mA IN and RDG are needed to protect CPU and SPF5007 in case of reverse * Rconnection of VB terminal. * Make VB of 1Pin and 13Pin short from the fin to be plated by solder. Timing Chart VIN OFF VIN ON Normal VB VO open Normal Open load OCP Normal Normal Shorted load VIN VOUT Recommended Operating Conditions (for one channel) Parameter min max Unit TSDOFF DG High inpidance Power supply voltage 5.5 16 V VIH 4 5.5 V VIL -0.3 0.9 V Normal 1 A Open load RIN 10 20 k Shorted load RDG 10 20 k Overheat IO 34 Internal current limit TSDON IOUT Ratings Mode VIN H L H L H L H L DG H L H H L L L L VO H L H H L (Limiting) L L L Normal TSD Overheat 35 High-side Power Switch ICs [4-circuits] SLA2502M External Dimensions (unit: mm) 310.2 Ellipse 3.2 0.15 * 3.8 4.8 0.2 24.4 0.2 1.7 0.1 16 0.2 9.9 0.2 3.2 0.15 a b 2.45 0.2 6.4 0.5 Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use (VCE (sat) 0.5V) Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent protection circuits Built-in protection against reverse connection of power supply Tj = 150C guaranteed 12.9 0.2 Features Absolute Maximum Ratings Parameter (Ta=25C) Symbol Ratings Unit Power supply voltage VB -13 to +40 V Input terminal voltage VIN -0.3 to +7.0 V DIAG output applied voltage VDIAG -0.3 to +7.0 V DIAG output source current IDIAG 3 mA Output current IO 1.2 A Power Dissipation PD 4.8 W Junction temperature Tj -40 to +150 C Operating temperature TOP -40 to +100 C Storage temperature Tstg -50 to +150 C +0.2 +0.2 1.15 -0.1 +0.2 0.55 -0.1 0.65 -0.1 14 * P2.03 0.1 = (28.42) Conditions 31.3 0.2 a: Part No. b: Lot No. 1 23 15 Stand-alone operation without heatsink; all circuits operating Equivalent Circuit Diagram SLA2502M The MIC is bound by the dotted lines. 8 VB Pre. Reg. Electrical Characteristics NI1 (VBopr =14V, Ta=25C unless otherwise specified) DIAG1 2 Drive CONT. 11k typ. 3 O.C.P DIAG DET Parameter Symbol Operating power supply voltage VBopr min typ max 6.0 16 Unit Conditions NI2 V 5 Iq VINth Hi output I IN Lo output I IN 0.8 mA 3.0 V 1.0 mA VIN = 5V 100 A VIN = 0V Input current 0 VIN = 0V 12 1 6 Drive CONT. 11k typ. 5 O.C.P DIAG DET GND1 7 4 10 Drive CONT. 11k typ. 11 O.C.P DIAG DET VCE (sat) Output terminal sink current Saturation voltage of DIAG output 0.5 V IO (off) 2.0 mA VDL 0.3 V IO 1.0A, VBopr = 6 to 16V VO = 0V, VIN = 0V NI4 100 A Open load detection resistor Ropen 30 k Overcurrent protection starting current IS 1.6 A VO = VBopr -1.9V TON 8 30 s IO = 1A 15 30 s IO = 1A TPLH 10 30 s IO = 1A TPHL 15 30 s IO = 1A DIAG output transfer time Out3 Drive CONT. 11k typ. 13 O.C.P 15 12 Out4 VDIAG = 5V TOFF Output transfer time 14 DIAG DET I DIAG = 3mA GND4 IDGH 9 T.S.D DIAG4 Leak current of DIAG output Out2 Pre. Reg. NI3 DIAG3 Saturation voltage of output transistor Out1 T.S.D DIAG2 Quiescent circuit current (per circuit) Threshold input voltage Ratings [Abbreviations] Drive: Drive circuit CONT: ON/OFF circuit Pre.Reg: Pre-regulator DIAG.DET.: Diagnostic circuit O.C.P.: Overcurrent protection T.S.D.: Thermal protection Standard Circuit Diagram Note: * The rule of protection against reverse connection of power supply is VB = -13V, one minute (all terminals except VB and GND should be open). VB PZ D1 Out Diagnostic Function SLA2502M IN VCC DIAG 5.1k VB Load GND 3.0V GND GND VIN 0.8V Truth table VIN VO VOUT SHORT Is OPEN OPEN OVER VOLTAGE H L L GND TSD Note 1: A pull-down resistor (11k typ.) is connected to the IN terminal. VOUT turns "L" when a high impedance is connected to the IN terminal in series. Note 2: Grounds GND1 and GND2 are not wired internally. They must be shorted at a pattern near the product. IO GND VDIAG Normal Shorted load Open load Overvoltage Overheat ERROR SIGNAL for CPU 36 H SLA2502M Electrical Characteristics Circuit Current (single circuit) Circuit Current (4 circuits) 60 (VB = 14V) 1.0 200 Ta = -40C 50 VB 150 Ta = -40C 125C VCE (sat) (V) 30 IB (mA) 25C 40 IB (mA) Saturation Voltage of Output Transistor 25C 100 125C 20 VIN = 0V Ta = 125C 25C 0.5 -40C 50 10 VIN = 0V 0 0 10 20 40 30 0 0 46 10 20 VB (V) 40 30 0 0 46 1 VB (V) Overcurrent Protection Characteristics (Ta=-40C) Overcurrent Protection Characteristics (Ta=25C) Overcurrent Protection Characteristics (Ta=125C) 20 20 20 VB = 18V VB = 18V 15 3 2 IO (A) VB = 18V 15 15 10 5 0 0 3 2 10 6V 5 6V 1 VO (V) 14V 14V VO (V) VO (V) 14V 0 0 4 1 5 2 IO (A) 10 6V 0 0 3 1 IO (A) Threshold Input Voltage Input Current (Output OFF) 20 2 3 IO (A) Input Current (Output Hi) 0.5 3 VB = 14V Ta = -40C 0.4 25C 2 I IL (A) VO (V) 25C -40C I IH (mA) Ta = 125C 15 VB = 14V VIN = 0V 10 0.3 125C 0.2 1 5 0.1 0 0 1 2 0 -50 3 0 50 VIN (V) 150 100 Ta (C) Saturation Voltage of DIAG Output 0 0 1 2 3 4 5 6 VIN (V) Quiescent Circuit Current (dual circuit) VIN = 0V 20 0.3 VB = 14V IDIAG = 3mA Ta = -40V 25V 125V VDL (V) Iq (mA) 0.2 10 0.1 VO shorted VO open 0 -50 0 50 Ta (C) 100 150 0 0 10 20 30 40 46 VB (V) 37 High-side Power Switch ICs [4-circuits] SLA2502M Thermal Protection Characteristics Output Terminal Leak Current (VO = 0V) 15 Open Load Detection Resistor 1.1 15 Ta = -40C 1.0 VO1 (V) TSD VB = 14V RL = 1.3k 5 25C 0.9 ROPEN (k) IOLEAK (mA) 10 125C 0.8 0.7 10 Ta = 125C 25C 5 -40C 0.6 0 0.5 0 50 100 Ta (C) 38 150 200 0 5 10 15 VB (V) 20 25 5 10 15 VB (V) 20 39 Low-side Switch ICs [Surface-mount 4-circuits] SPF5002A External Dimensions (unit: mm) Features DMOS 4ch output Allows ON/OFF using C-MOS logic level Built-in overcurrent, overvoltage and thermal protection circuits 12.2 0.2 10.5 0.2 16 (Ta=25C) Conditions +0.2 Unit VB 40 V VOUT 37 V 1 VIN -0.5 to +7.5 V 1.270.25 Output current IO 1.8 A Power Dissipation PD 2 W Storage temperature Tstg -40 to +150 C Channel temperature Tch 150 C Output avalanche capability EAV 50 mJ Power supply voltage Output terminal voltage Input terminal voltage 2.0 -0.8 Ratings 8 +0.15 0.4 -0.05 2.5 0.2 Symbol 9 7.5 0.2 Absolute Maximum Ratings Parameter +0.1 1.0 -0.05 Fin thickness +0.15 0.25 -0.05 Single pulse Equivalent Circuit Diagram VB VOUT 1 Gate Protction Electrical Characteristics Parameter Power supply voltage Symbol VBopr Reg. REF (VB =14V, Ta=25C unless otherwise specified) OVP Ratings min typ 5.5 max Unit Conditions Gate Driver TSD OCP 25 V Quiescent circuit current Iq 5 7 mA VIN = 0V (all inputs) Operating circuit current ICC 8 12 mA VIN = 5V (all inputs) P-GND VIN 1 250 k typ Hi output VIN 3.5 5.5 V Lo output VIN -0.5 1.5 V IO = 1A Hi output I IN 50 A VIN = 5V Lo output I IN 30 A VIN = 0V Input voltage Input current Output ON resistance Output clamp voltage 0.4 0.6 0.5 0.7 VB = 5.5V 50 IO = 1A RDS (ON) VOUT (clamp) 41 55 V Output leak current I OH 10 A VO = 37V Forward voltage of output stage diode VF 1.6 V I F = 0.5A Overvoltage protection starting voltage VB (ovp) 25 40 V Thermal protection starting temperature TTSD 151 Overcurrent protection starting current IS 1.1 165 VIN 2 VOUT 2 VIN 3 VOUT 3 VIN 4 VOUT 4 L-GND Circuit Example VCC C 2 A 6 TON 12 s 12 RL = 14, I O = 1A 14 Output transfer time TOFF 8 s RL = 14, I O = 1A Output rise time Tr 5 s RL = 14, I O = 1A Output fall time Tf 10 s RL = 14, I O = 1A IN2 IN3 L H 15 5 VB SPF5002A IN4 L-GND 13 P-GND 1,9 Use L-GND and P-GND being connected. Truth table VIN VO L 7 OUT2 OUT4 IN1 CONTROL UNIT H 10 OUT1 OUT3 4 Timing Chart OVP VB VOUT VIN Normal 40 Overvoltage Overheat Overcurrent * Self-excited frequency is used in the overcurrent protection. SPF5002A Electrical Characteristics Quiescent Circuit Current Circuit Current (single circuit) 10 10 8 Id (mA) Iq (mA) Ta = -40C 6 4 Ta = 120C 2 Ta = -40C Ta = -40C 6 4 Ta = 125C 10 20 30 0 40 6 Ta = 125C 4 2 2 0 Ta = 25C 8 Ta = 25C Ta = 25C Id (mA) 8 0 Circuit Current (4 circuits) 10 0 10 VB (V) 20 30 0 40 10 20 Output ON Voltage Threshold Input Voltage 15 30 40 VB (V) VB (V) Forward Voltage of Output Stage Diode 1.5 1.0 VB = 14V 5 0 Ta = 125C Ta = 25C 0.4 0.5 0.2 VO = 14V IO = 0.1A 0 0.6 I F (A) VDS (ON) (V) 1.0 VO (V) 10 Ta = 125C Ta = 25C Ta = -40C 0.8 Ta = -40C Ta = 25C Ta = 125C Ta = -40C 1 2 0 3 0 0.5 VIN (th) (V) 1.0 1.5 2.0 IO (A) Overcurrent Protection Characteristics 0 0 0.5 1.0 1.5 VF (V) Overvoltage Protection Starting Voltage 15 15 IO = 0.1A VB =14V 10 Ta = -40C Ta = 25C Ta = 125C VO (V) VO (V) 10 5 5 Ta = 120C Ta = 25C Ta = -40C 0 0 1.0 IO (A) 2.0 0 0 10 20 30 40 VB (V) 41 Low-side Switch ICs [Surface-mount 4-circuits] SPF5009 (under development) External Dimensions (unit: mm) 17.28 0.2 +0.1 15.58 0.2 1.0 -0.05 24 Fin thickness 13 a Symbol Ratings Unit VB 40 V Output terminal voltage (DC) VOUT 50 V Output terminal voltage (pulse) VOUT Output clamping (max 70V) V Output current (DC) IOUT 2.9 A Output current (pulse) IOUT Over current protection starting current A Input terminal voltage V( IN, SEL, B/U) -0.5 to +6.5 V Diag output source current VDIAG 6.5 V Diag output voltage I DIAG 5 mA Power Dissipation +0.2 (Ta=25C) PD 2.8 W Storage temperature Tstg -40 to +150 C Channel temperature Tch 150 C Conditions 1 12 +0.15 1.27 0.25 0.4 -0.05 2.5 0.2 Parameter Power supply voltage 2.0 -0.8 b Absolute Maximum Ratings +0.15 0.25 -0.05 a: Part No. b: Lot No. Equivalent Circuit Diagram VB (7) Gate Protection Ref VOUT1 (4) Reg Gate driver VIN B/U (17) TSD Output avalanche capability EAV mJ 80 VOUT SENSE VIN SEL (5) OUT OCP Set Latch Reset Single pulse VIN 1 (6) P-GND1 (1, 2) OSC Monitor Symbol VB (opr) (VB =14V, Ta = 25C unless otherwise specified) Ratings min typ 5.5 max Unit 40 V 9 12 mA VB =14V, VIN=0V Operating circuit current Id 12 15 mA VB =14V, VIN=5V (all inputs) Input voltage (1 to 4, SEL, B/U) VIN (H) 3.5 6.5 V VB =14V, VO=1A VIN (L) -0.5 1.5 V VB =14V Input current (single circuit) (1 to 4, SEL, B/U) I IN (H) 200 A VB =14V, VIN=5V I IN (L) 30 A VB =14V, VIN=0V Output ON resistance RDS (ON) 0.18 VB =14V, IO=1A Output clamp voltage VOUT (clamp) VB =14V, IO=1A 70 V Output leak current I OH 50 A Forward voltage of output stage diode VF 1.5 V I F =1A Output moniter threshold voltage 65 Vt hM P-GND2 (11, 12) VDIAG2 (10) VOUT3 (16) Iq 60 VIN 2 (8) Conditions Quiescent circuit current Power supply voltage VB =14V, VO=50V VIN 3 (18) P-GND3 (13, 14) VDIAG3 (15) VOUT4 (21) VIN 4 (20) P-GND4 (23, 24) VDIAG4 (22) L-GND (19) Circuit Example 2 V VB =14V 6.5 V VB =14V, VDIAG=6.5V VDIAG (L) 0.5 V VB =14V, IDIAG=5mA 6 I DH 10 A VB =14V, VDIAG=6.5V 18 VDIAG (H) 6.4 7 DIAG output voltage DIAG output leak current VDIAG1 (3) VOUT2 (9) Electrical Characteristics Parameter Thermal shutdown operating temperature TTSD 151 Overcurrent protection starting current IS 3.0 165 C VB =14V A VB =14V 12 s VB =14V, RL=14, I O=1A TOFF 8 s VB =14V, RL=14, I O=1A Output rise time Tr 5 s VB =14V, RL=14, I O=1A Output fall time Tf 10 s VB =14V, RL=14, I O=1A t DON 12 s VB =14V, RL=14, I O=1A t DOFF 8 s VB =14V, RL=14, I O=1A DIAG output transfer time 8 20 17 5 VB 4 9 OUT1 OUT2 16 OUT3 21 OUT4 VIN1 VIN2 VIN3 VIN4 DIAG1 DIAG2 SPF5009 DIAG3 DIAG4 VINB/U VINSEL LG TON Output transfer time 19 PG1 1, 2 PG2 11, 12 PG3 13, 14 3 10 15 22 PG4 23, 24 Timing Chart Main input signal 1 VIN1 Main input signal 2 VIN2 Backup input signal VINB/U Input select signal VINSEL Power supply voltage VB Output voltage 1 VOUT1 OCP OCP Output current 1 IOUT1 DIAG output 1 VDIAG1 DIAG output 2 VDIAG2 Nomal 42 10.5 0.3 DMOS 4ch output Allows ON/OFF using C-MOS logic level Built-in over current and thermal protection circuit and diagnostic function to detect open load Built-in output status signals (over current, over heat and open load) 7.5 0.2 Features Output 1 Output 1 Output 1 Overheat Over current Open load Main mode Nomal Output 1 Output 1 Output 1 Overheat Over current Open load Backup mode 43 Low-side Switch ICs [Surface-mount 4-circuits with Output Monitor] SPF5012 (under development) External Dimensions (unit: mm) Features 17.28 0.2 +0.1 15.58 0.2 1.0 -0.05 24 Fin thickness 13 Symbol (Ta=25C) Ratings Unit VB 40 V VCC 7.5 V Conditions 1 12 +0.15 1.27 0.25 0.4 -0.05 2.5 0.2 Parameter 2 0.2 b Absolute Maximum Ratings DC input voltage Output voltage VO 40 (DC) V Logic input voltage VIN -0.5 to +7.5 V Output current IO Self Limited A VDIAG 0 to VCC V PD 2.8 to 5 W Storage temperature Tstg -40 to +150 C Channel temperature Tch 150 C Output avalanche capability EAV 100 mJ Diag output voltage Power Dissipation 7.5 0.2 a 10.5 0.3 Output monitor circuit (DIAG) DMOS 4ch output Allows ON/OFF using C-MOS logic level Built-in overcurrent, overvoltage and thermal protection circuits +0.15 0.25 -0.05 *1 a: Part No. b: Lot No. Equivalent Circuit Diagram *2 VCC1-2 (7) Diag1 (5) Single pulse VB (19) Gate Protection * 1. At the clamping operation, refer to the section of VOUT (clamp) in electrical characteristics * 2. Changes by the patern of mounted substrate VOUT1 (3) Reg OVP Gate driver TSD VIN1 (4) OCP P. GND1 (1, 2) Ch1 Electrical Characteristics Parameter Symbol (VB =14V, Ta = 25C unless otherwise specified) Ratings min typ max Unit Conditions Diag2 (8) VOUT2 (10) P. GND2 (11, 12) VIN2 (9) Ch2 VB (opr) 5.5 40 V VCC (opr) 4.5 5.5 V 6 mA VB =14V, VIN=0V VCC3-4 (18) Power supply voltage Quiescent circuit current 4 Iq 12 mA VB =14V, VIN=5V Hi output VIN 3.5 5.5 V VB =14V, VO=1A Lo output VIN -0.5 1.5 V VB =14V Hi output I IN 50 A Operating circuit current Id 8 Input voltage Input current Lo output I IN Output ON resistance RDS (ON) Output clamp voltage VOUT (clamp) Output leak current 45 50 A VB =14V, IO 1A 0.3 VB =14V, IO=1A, Ta=125C 0.2 VB =14V, IO=1A, Ta=25C 55 V 2.8 mA 900 A VB =14V, VCC =5V, VIN=0V, VO =14V, Ta=25C 1.6 V 40 V I OH Forward voltage of output stage diode VF Overvoltage protection starting voltage VB (ovp) VB =14V, IO=1A VB =14V, VCC=5V, VIN=0V, VO =40V, Ta=25C L. GND (6) Circuit Example Overvoltage protection hysteresis voltage VB (ovp*hys) Thermal shutdown operating temperature Overcurrent protection operating current TTSD IS 151 8 V 165 C A VB =14V, Ta=-40C A VB =14V, Ta=25C 5 A VB =14V, Ta=125C s TOFF 8 s Tr 5 s 10 s Output transfer time Output rise time Output fall time Output-diag voltage ratio Diag output clamping voltage Tf ra (DIAG) VDIAG (clamp) 0.195 0.2 0.205 4.85 19 3 10 15 22 VOUT1 VOUT2 VOUT3 VOUT4 Diag1 Diag2 Diag3 Diag4 SPF5012 5 8 17 20 Diag output P-GND1 P-GND2 P-GND3 P-GND4 1, 2 6 11,12 13,14 23,24 Truth table VIN VO H L L H VB=14V, RL=14, I O=1A VB =14V, VO =1 to 14V, Rdiag=500k V VIN1 VIN2 VIN3 VIN4 4 9 16 21 L-GND 6 12 Input signal VB =14V 6 TON 18 7 VCC1-2 VCC3-4 VB I F=1A VCC 25 Ch4 Diag4 (20) VOUT4 (22) P. GND4 (23, 24) VIN4 (21) VB =14V, VIN=5V -30 Ch3 Diag3 (17) VOUT3 (15) P. GND3 (13, 14) VIN3 (16) Timing Chart VB=14V, VCC=5V, VO =40V OVP VB VOUT VIN Normal 44 Overvoltage Overheat Overcurrent * Self-excited frequency is used in the overcurrent protection. 45 Stepper-motor Driver ICs SLA4708M External Dimensions (unit: mm) Features High output breakdown voltage of 50V Affluent output current of 1.5A Built-in overcurrent, overvoltage and thermal protection circuits Low standby current of 50A 31.00.2 3.20.15 Ratings Unit VS 35 V Breakdown voltage VO 50 V Input voltage VIN -0.3 to +7 V IO, AVE 1.5 A Diagnostic output sink current IDIAG 10 mA Diagnostic output withstand voltage IDIAG. H 7 V Output current Operating temperature Top -40 to +85 C Storage temperature Tstg -40 to +150 C PD 3.5 (Ta=25C) W Power Dissipation Conditions Lead plate thickness resins 0.8max 9.90.2 8.5max 16.00.2 Symbol a b 2.7 (Ta=25C) 13.00.2 16.4 9.5min (10.4) Parameter 4.80.2 1.70.7 0.2 Absolute Maximum Ratings Power supply voltage Ellipse 3.20.15 * 3.8 24.40.2 12 Pin 1 +0.2 0.85 -0.1 1.20.15 +0.2 0.55 -0.1 0.15 2.20.7 1.45 11*P2.54 0.7 =27.94 1.0 31.5 max a: Part No. b: Lot No. 1 2 3 4 5 6 7 8 9 10 11 12 Without heatsink Standard Circuit Diagram Electrical Characteristics Parameter Input voltage (I A/A, I B/B standby) Input current Symbol (VS =12V, Ta=25C) min typ max 0.8 VIL VIH C Ratings 2.4 Unit Output leak current Overcurrent detection 4 OUTA V I IL -0.8 mA VIN = 0.4V I IH 50 A VIN = 2.4V Overvoltage detection Saturation voltage of diagnostic output Standby current 46 VO.STA 1.3 V I O = 1A, Ta = 25C VO.STA 1.5 V I O = 1.5A, Ta = 25C 100 A I O.LEAK I SD 1.8 VSD 27.5 I STB VO = 16V A V VDIAG.L 0.3 50 ZD V V A I DIAG = 5mA VS = 12V 5 OUT A 9 OUT B SLA4708M 8 1 OUT B VS 12 DIAG 3 I A /A I B/B 10 5V Output saturation voltage + Conditions 2 STBY 4.7k P-GND 6 L-GND 11 L-GND 7 N.C. CPU ZD: VS <35V C 100F (Reference) Stepper motor SLA4708M Electrical Characteristics Overvoltage Protection Characteristics 20 200 14 Ta = 25C Vcc=12V Constant (ST = 5V) Output voltage VO (V) At Constant IS (mA) At standby IS (A) Power supply current 12 100 Saturation Voltage of Output Transistor Characteristics Saturation voltage of output transistor Vsat (V) Power Supply Current Characteristics 10 Common for all phases 10 8 6 4 At standby (ST = 0V) 2 0 0 0 10 20 30 Power supply voltage VS (V) 0 0 10 20 Power supply voltage VS (V) 30 35 2.0 Vcc (Vs) =16V Ta =25C Common for all phases 1.5 1.0 0.5 0 0 1.0 2.0 3.0 Output current IO (A) Thermal Protection Characteristics 14 Vcc (Vs) =12V VST = 5V Output voltage VO (V) 12 10 8 T j2 T j1 6 4 2 0 0 110 120 130 140 150 160 Junction temperature Tj (C) 47 Full Bridge PWM Control DC Motor Driver IC SI-5300 External Dimensions (unit: mm) 4.80.2 (28.4) P-ch MOS for high side and N-ch MOS for low side in one package Enable to drive DC5V Possible to drive a motor at the LS-TTL, C-MOS Logic level Guarantee Tj=Tch=150C Built-in over current protection and thermal shut down circuits Built-in diagnosis function to monitor and signal the state of each protection circuits Built-in vertical current prevention circuits (Dead time is defined internally.) No insulator required for Sanken's original package (SPM package) (4) (R0.8) R-end +0.2 0.75 -0.1 +0.2 0.45 -0.1 14 * P2.030.1 =(28.42) Absolute Maximum Ratings Parameter Symbol Ratings Unit 20.5 350.3 (Ta=25C) VM Motor supply voltage 4.50.7 Conditions a: Part No. b: Lot No. V 40 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Input terminal voltage IN1 -0.3 to 7 V IN2 -0.3 to 7 V PWM -0.3 to 7 V IO 5 A IO (p-p) 17 A Output current Equivalent Circuit VM VM PW 1ms, Duty VM 50% B 20 fPWM PWM control frequency kHz Duty=20% to 80% B OCP Pre-Rec OCP Pch1 Forward * reverse rotation switch frequency* fCW 500 Hz Operating temperature TOP -40 to +85 C Tj, Tch -40 to +150 C Tstg -40 to +150 C TSD Q R j-c 3.7 C/W j-a 35 C/W B S M Dead Time IN1 Storage temperature FF A Pch2 OUT1 A B Junction and channel temperature PWM ECU inside VCC PULL-UP Resistor OUT2 Nch1 PWM down edge sense Thermal resistance DIAG Nch2 A A OCP OCP B Dead Time IN2 PD1 3.6 W Without heatsink PD2 33.7 W With infinite heatsink Power dissipation Note: * The dead time for the length current prevention in positive and the reversing switch is set by internal control IC. The set point in internal IC at the dead time is 20s (typical). Please take into account the dead time and consider the load conditions when you use the IC. Output saturation voltage Ratings min typ 6 LGND max 0.8 V IO=3A V, VO-PG 0.3 V IO=3A I L, L 100 A VM=40V I L, H 100 A VM=40V * 15 *3 s VPWM: L s VPWM: H 10 s 10 2 tpHL tpHL-tpLH Static circuit current H (Vth=2.5V typ) IO=10A 0.8 V IO=3A 1.0 V IM1 22 mA Stop mode IM2 22 mA Forward and reverse mode IM3 16 mA Brake mode 2.0 IIN, L -100 IIN, H 200 A VIN1=VIN2=VPWM=0V OUT1 A VIN1=VIN2=VPWM=5V 1 A 20 ms DIAG terminal voltage VD *L V * Vth VOUT GND VOUT*0.9 OUT terminal GND tpLH Output transmission time tpLH is time from Vth (2.5V typ) of the terminal of PWM to output (VOUT *0.9) of the output terminal. PWM terminal Stop (Free Run) ID * SINK=1mA Breake Breake High inpidance High inpidance IOUT (A) *4 GND OUT terminal VOUT *0.1 tpHL Protection circuit Return to constant action VM=2V VM=2V VM IN1 IN2 PWM Vth GND Output transmission time tpHL is time from Vth (2.5V typ) of the terminal of PWM to output (VOUT *0.1) of the output terminal. VM-OUT1 (Pch1 VDS) VM-OUT2 (Pch2 VDS) VOUT1-GND (Nch1 VDS) VOUT2-GND (Nch2 VDS) OUT1 OUT2 *4: DIAG signal output terminal is an open collector output. Use a pull-up resistor when connecting it to a logic circuit. 48 Stop (Free Run) OUT2 GND VPWM (5V) PWM terminal Reverse Duty OFF C=1F (typ) *3: Output transmission time (tpHL) VPWM (5V) Reverse Duty ON High inpidance Note: *1: The standard value of IOCP is assumed to be a value by which the output of each Power MOS FET cuts off. When the protection circuit of OCP and TSD operates, Power MOS FETs keeps cutoff. When a signal (5V: H 0V: L) is input to the terminal PWM, the cutoff operation will be released. Moreover, three minutes (Ta=25C, fPWM=10kHz, VM=14V) are assumed to be max at the overcurrent state continuance time in the VM operation and the ground of output terminal (OUT1, OUT2). It is not the one to assure the operation including reliability in the state that the short-circuit continues for a long time. *2: Output transmission time (tpLH) Forward Duty OFF IN2 PWM 16 4,12 PGND IN1 VIN1=VIN2=VPWM IOCP 0.3 Forward Duty ON VIN1=VIN2=VPWM t DIAG 8 LGND Delay Capacitor 1F Therminal name V DIAG output pulse width M Timing Chart IO=10A V OPC start current 9 TDIAG Pull-up Resistor 10k (Open Collector) L (Vth=2.5V typ) IO=3A 3.0 SI-5300 10 DIAG VCC V VIN, L 14, 15 OUT2 7 PWM V VIN, H Input terminal current 6 IN1 1.0 VF *H 3, 5, 13 VM 1, 2 OUT1 11 IN2 CPU 0.8 VF *L Forward voltage characteristic of diode between drain and source + Capacitor 220F Battery V, VM-VO Output transmission time PGND Standard Connection Diagram Conditions VM=24V (2 min.) tpLH Input terminal voltage Unit V Output leakage current CDIAG 1F A PGND (Unless, otherwise specified, Tj=Tch=25C, VM =14V, IO =3A) 18 VIN Motor supply voltage TDIAG Relay Electrical Characteristics Symbol DIAG CONTROL B A Parameter 3.60.5 (R0.8) 7.60.5 b 16.10.2 2.70.2 a (4.5) Features IOUT (A) TDIAG DIAG DIAG Threminal VCC=5V Pull-up 20ms (min) SI-5300 Electrical Characteristics Output saturation voltage (Pch) Output saturation voltage (Nch) Forward voltage of Diode between drain and source 0.5 1.0 12 VM=14V VM=14V Ta=25C 10 0.4 0.8 Nch MOS FET Ta=85C Ta=25C 0.4 Ta=-40C 0.2 8 Ta=85C 0.3 Ta=25C I FSD (A) 0.6 V*VO -PG (V) V*VM -VO (V) Ta=150C Ta=150C Ta=-40C 0.2 0 1 2 3 4 5 6 2 0 0 7 Pch MOS FET 4 0.1 0 6 0 1 2 3 I O (A) 4 5 6 7 0 0.2 0.4 I O (A) Quiescent circuit current Voltage of input terminal (Threshold voltage) VM=14V 0.5 12 Duty off Ta=150C VO (V) Stop I SINK (mA) 0.4 I M (mA) 1.2 VM=14V Brake 15 1.0 0.6 Duty on 20 0.8 Current of input terminal (SINK current) 16 25 0.6 VFSD (V) Ta=150C Ta=25C 8 Ta=-40C 10 Ta=85C Ta=25C 0.3 Ta=-40C 0.2 4 5 0.1 I O=0A Ta=25C 0 0 10 20 30 0 0 40 0 1 2 VM (V) 3 4 5 6 7 0 1 2 VIN1, IN2, PWM (V) Current of input terminal (Source current) 3 4 5 6 7 VIN1, IN2, PWM (V) VTDIAG - VDIAG Characteristics DIAG terminal * Saturation voltage Pull-up resistance =3k -12 0.6 6 VM=14V I IN1=I IN2=PWM=0V Ta=150C Ta=25C Ta=-40C 4 Ta=-40C -6 3 2 0.2 -2 1 0.1 10 0 20 30 0 40 0 0 1 2 VM (V) 4 5 6 Ta=25C Ta=-40C 0 1 2 3 4 5 6 I SINK (mA) VTDIAG (V) DIAG terminal * Output pulse width Thermal shut down protection 1000 6 VM=10V I O=0A Ta=25C VM=14V 5 100 4 VDIAG (V) DIAG terminal * Output time of low signal (ms) 3 Ta=85C 0.3 -4 0 Ta=150C 0.4 VDIAG (V) Ta=25C -8 VM=14V 0.5 5 Ta=150C VDIAG (V) IIN1, IIN2, PWM source (A) -10 10 3 2 1 1 0.01 0.1 1 10 TDIAG terminal Delay capacitor capacitance 0 100 125 150 175 200 Ta (C) 49 Full Bridge PWM Control DC Motor Driver IC SI-5300 Electrical Characteristics Pch MOS FET Safe Operating Area (SOA) Nch MOS FET Safe Operating Area (SOA) 40 100 100 1ms 1ms 10ms 10 I OUT (A) I OUT (A) Allowable Power Dissipation PD (W) Tc=25C Tc=25C 100ms 10 10ms 100ms 1 1 0.3 0.3 2 10 VM-OUT (V) 50 PD --Ta Characteristics 40 100 2 10 VOUT -PG (V) 40 100 35 Infinite heatsink (Tc =25C) 30 25 20 15 10 5 No heatsink 0 -40 -30 0 25 50 75 Ambient temperature Ta (C) 100 51 High Voltage Full Bridge Drive IC SLA2402M Features External Dimensions (unit: mm) One Package Full Bridge Driver Consisted of High Voltage IC and Power MOS FETs (4 pieces) High Voltage Driver which accepts direct connection to the input signal line External components such as high voltage diodes and capacitors are not required 3.2 0.15 * Ratings Unit VM 500 V b Conditions 0.65 +0.2 -0.1 16.00.2 13.00.2 9.90.2 Lead plate thickness resins 0.8max a 9.5 min Symbol 4.80.2 1.70.1 2.7 Parameter Power source voltage Ellipse 3.2 0.15 *3.8 16.4 0.2 8.5 max Absolute Maximum Ratings 31.0 0.2 24.4 0.2 +0.2 2.450.2 1.0 -0.1 +0.2 17* P1.68 0.1 =28.56 Input voltage VIN 15 Output voltage VO 500 V Output current IO 15 A PW Power dissipation PD 5 (Ta=25C) W Without heatsink Storage temperature Tstg -40 to +125 C Operation temperature Topr -40 to +105 C V 0.55 -0.1 31.5 max 250s a: Part No. b: Lot No. * Power GND (D terminal) to -HV (-HV terminal) voltage. Block Diagram Electrical Characteristics Parameter Symbol Power MOS FET output breakdown voltage BVOUT Ratings min typ Unit max Conditions 7 500 IO=100A V 4 MOSQ1 High-side Power MOS FET output on-state voltage Low-side Power MOS FET output on-state voltage A 100 IOUT (off) VIN1 -HV VIN2 LO2 L GND GL2 IO=0.4A, VIN=10V VOUT (on) 1 0.28 0.4 0.52 V VOUT (on) 2 1.4 2.0 2.6 V IO=2A, VIN=10V VOUT (on) 1 0.28 0.4 0.52 V IO=0.4A, VGL=10V VOUT (on) 2 1.4 2.0 2.6 V IO=2A, VGL=10V 3.0 mA VCC=4.5 to 15V ICC 1 MOSQ'2 LO1 GL1 15 OUT2 MIC MOSQ'1 2 VO=500V MOSQ2 HO2 HO1 OUT1 Power MOS FET output leakage voltage +12V VCC D1 3 6 8 10 9 11 13 16 CPU * Dotted Line: Outside Connection Quiescent circuit current ICC 2 4.0 mA VCC=10V, VM=400V Operating circuit current ICC 3 4.0 mA VCC=10V, VM=400V Input voltage (High level) VIH Input voltage (Low level) VIL Delay time * Operating voltage 0.8VCC 0.2VCC V VCC=4.5 to 15V V VCC=4.5 to 15V Timing Chart t d (on) 1.4 s VCC=10A, VIN=10V, t d (off) 3.3 s VM=85A, t 2.5 s IO=0.41A VCC 15 V -40 to +105C Ignition VCC IN1 IN2 * About delay time HO1 Signal input waveform vs output waveform LO2 1 Highside switch turn-on, turn-off 2 Lowside switch turn-on, turn-off HO2 VIN1 0V 10% VIN1 10% 10% 0V 10% LO1 --HV 0V 0V 10% 10% td (on) td (on) * t: t = td (on) - td (off) Measurement Circuit VIN2 RL VOUT1 VOUT2 Conditions VCC=10V, VIN=10V (pulse) VM=85V IO=0.41A (RL=207) * When pulse signal is inputted to VlN1, VIN2 VIN1 VM 52 -100V VOUT2 OUT2-GND td (on) VIN1 0V 10% 10% VOUT1 RL on solid line is ON and dotted line RL is off. On the contrary, when pulse signal is inputted to VlN2, RL on dotted line is ON and dotted line RL is off. td (on) -400V OSC 400Hz 17 SLA2402M Electrical Characteristics Quiescent circuit current supplied high voltage Quiescent circuit current 25C -40C 1.0 0.5 2.5 150C 2.0 105C 1.5 25C 1.0 -40C 0.5 0 0 0 5 10 15 100 300 400 105C 3 25C 2 -40C 1 10 15 12V 1.5 10V 9V 1.0 0.5 4.5V 200 300 400 VCC =VIN =10V 10V 1.5 9V 1.0 0.5 4.5V -40C 0 2 3 100 500 Ta=25C 8 2 VCC=15V VCC=9V 6 4 VCC= 4.5V 2 0 0 50 100 150 0 5 10 15 Input voltage VIN (V) Ambient temperature (C) Output on-state voltage 400 10 4 Output current (A) 300 Gate drive voltage 6 0 -50 4 200 High voltage VM (V) Gate drive voltage VGL (V) Gate drive voltage VGL (V) 2 Input threshold voltage 8 5 Input threshold voltage VIH, VIL (V) VCC=VIN=10V 4 3 I O=2A 2 1 I O=0.4A 0 -50 12V 0 8 25C VCC= 15V 2.0 VCC=10V 4 500 2.5 500 10 105C 400 0 100 Gate drive voltage 150C 300 3.0 High voltage VM (V) 8 200 Ta=25C VCC= 15V 2.0 0 10 6 100 Operating circuit current 2.5 20 Output on-state voltage 1 0.5 3.5 Operation voltage VCC (V) 0 1.0 0 0 0 5 -40C High voltage VM (V) Ta=25C 150C 0 25C 1.5 500 3.0 VIN=0V VM=400V Quiescent circuit current ICC2 (mA) Quiescent circuit current ICC2 (mA) 200 Quiescent circuit current 5 4 105C 2.0 High voltage VM (V) Quiescent circuit current supplied high voltage 150C 2.5 0 0 20 Operation voltage VCC (V) Output on-state voltage (V) VCC=VIN1(2)=10V Operating circuit current ICC3 (mA) Quiescent circuit current ICC1 (mA) 1.5 3.0 VIN=0V VCC=10V Operating circuit current ICC3 (mA) 2.0 Quiescent circuit current ICC2 (mA) 2.5 150C 105C VIN=0V Output on-state voltage (V) Operating circuit current 3.0 3.0 0 50 100 Ambient temperature (C) 150 7 VCC=10V VIH 6 5 4 VIL 3 2 1 0 -50 0 50 100 150 Ambient temperature (C) 53 High Voltage Full Bridge Drive IC SLA2402M Electrical Characteristics High side switch turn-on, off High side switch turn-on, off 5.0 5.0 Ta=25C VM=85V, I O=0.41A 5.0 VM=85V, I O=0.41A VCC=10V 4.0 Ta=25C VM=85V, I O=0.41A turn-off turn-off 3.0 2.0 4.0 turn-on, off (s) 4.0 turn-on, off (s) turn-on, off (s) Low side switch turn-on, off 3.0 2.0 turn-off 3.0 2.0 turn-on turn-on 1.0 0 6 8 10 12 14 0 -50 16 Operation voltage VCC (V) turn-on, off (s) 3.0 2.0 turn-on 1.0 0 50 100 150 Power derating curve 6 Power dissipation (W) 150 4 without heatsink 4 3 2 1 0 50 100 150 8 10 12 14 16 Operation voltage VCC (V) Safe operating area (Power MOS FET) RDS (on) limited 10 10 1 0.1 100s 1ms 1 10ms 0.1 0.01 0.001 0.0001 0.001 6 100 Ta=25C Single pulse 0.01 0.1 1 Power time (s) Ambient temperature (C) Ambient temperature (C) Transient thermal resistance (C/W) turn-off 4.0 54 100 100 VM=85V, I O=0.41A VCC=10V 0 -50 50 Transient thermal resistance characteristics 5.0 5 0 0 Ambient temperature (C) Low side switch turn-on, off 0 -50 1.0 Drain current (A) 4 turn-on 1.0 10 100 Ta=25C Single pulse 0.01 10 100 Drain to source voltage (V) 1000 55 High Voltage Full Bridge Drive IC SLA2403M Features External Dimensions (unit: mm) One Package Full Bridge Driver Consisted of High Voltage IC and Power MOS FETs (4 pieces) High Voltage Driver which accepts direct connection to the input signal line External components such as high voltage diodes and capacitors are not required 3.2 0.15 * Ratings Unit VM 500 V b Conditions 0.65 +0.2 -0.1 16.00.2 13.00.2 9.90.2 Lead plate thickness resins 0.8max a 9.5 min Symbol +0.2 2.450.2 1.0 -0.1 +0.2 17* P1.68 0.1 =28.56 Input voltage VIN 15 Output voltage VO 500 V IO 7 A Tc=25C IO (peak) 15 A PW V 0.55 -0.1 31.5 max Output current Power dissipation 4.80.2 1.70.1 2.7 Parameter Power source voltage Ellipse 3.2 0.15 *3.8 16.4 0.2 8.5 max Absolute Maximum Ratings 31.0 0.2 24.4 0.2 a: Part No. b: Lot No. 250s 5 (Ta=25C) W Without heatsink 40 (Tc=25C) W With infinite heatsink PD Storage temperature Tstg -40 to +125 C Operation temperature Topr -40 to +125 C Junction temperature Tj 150 C Block Diagram * Power GND (D terminal) to -HV (-HV terminal) voltage. 7 Electrical Characteristics Parameter Symbol MOSQ2 MOSQ1 4 Ratings min Power MOS FET output breakdown voltage BVOUT Power MOS FET output leakage voltage IOUT (off) High-side Power MOS FET output on-state voltage VOUT (on) 0.18 Lowside Power MOS FET output on-state voltage VOUT (on) 0.18 typ Unit max 5 Conditions D1 VCC HO1 OUT1 LO2 VIN1 V IO=100A 100 A VO=500V 0.26 0.34 V IO=0.4A, VIN=10V 0.26 0.34 V IO=0.4A, VGL=10V 500 2 MOSQ'2 LO1 GL1 6 -HV 8 VIN2 10 GL2 L GND 9 11 13 17 CPU * Dotted Line: Outside Connection ICC 1 3.0 mA VCC=6 to 15V ICC 2 4.0 mA VCC=10V, VM=400V Operating circuit current ICC 3 4.0 mA VCC=10V, VM=400V Input voltage (High level) VIH Input voltage (Low level) VIL Quiescent circuit current Delay time * 0.8VCC 0.2VCC VCC=6 to 15V V VCC=6 to 15V VCC IN1 t d (on) 2.0 s VCC=10A, VIN=10V, t d (off) 3.0 s VM=85V, IO=0.41A V -40 to +125C 6 VCC Operating voltage 15 Timing Chart V Ignition IN2 HO1 * About delay time LO2 Signal input waveform vs output waveform HO2 1 Highside switch turn-on, turn-off 2 Lowside switch turn-on, turn-off LO1 VIN1 0V 10% VIN1 10% 10% 0V 10% --HV 0V 10% 10% VOUT1 10% 10% td (on) td (on) VOUT2 td (on) * t: t = td (on) - td (off) Measurement Circuit VIN1 VIN2 RL VOUT1 VOUT2 VIN2 VIN1 VM 56 0V -100V 0V Conditions VCC=10V, VIN=10V (pulse) VM=85V IO=0.41A (RL=207) * When pulse signal is inputted to VlN1, RL on solid line is ON and dotted line RL is off. On the contrary, when pulse signal is inputted to VlN2, RL on dotted line is ON and dotted line RL is off. td (on) OUT2-GND -400V D2 15 OUT2 MIC MOSQ'1 3 HO2 OSC 400Hz 14 16 SLA2403M Electrical Characteristics Quiescent circuit current Quiescent circuit current supplied high voltage 2.5 85C 2.0 25C 1.5 -40C 1.0 0.5 4.0 VIN=0V VCC=10V 2.5 125C 2.0 85C 1.5 25C 1.0 -40C 0.5 0 0 5 10 15 100 400 85C 25C 2 -40C 1 5 10 15 25C 1.5 -40C 1.0 0.5 0 2.5 2.0 12V 1.5 10V 9V 1.0 6V 0.5 100 200 300 400 VCC= 15V 3.0 2.5 12V 2.0 10V 9V 1.5 1.0 6V 0.5 500 0 100 200 300 400 500 High voltage VM (V) Input threshold voltage Gate drive voltage 10 10 Ta=25C VCC=VIN=10V 150C 4 125C 3 85C 2 25C 1 -40C 2 3 Output current 8 6 VCC=6V 4 2 0 -50 0 4 VCC=15V VCC=10V Gate drive voltage VGL (V) Input threshold voltage VIH (V) 5 1 500 0 0 6 400 3.5 High voltage VM (V) Output on-state voltage 300 Ta=25C VCC= 15V 3.0 20 200 4.0 Operation voltage VCC (V) 0 100 Operating circuit current 0 0 85C 2.0 500 Operating circuit current ICC3 (mA) 125C 4 3 125C 2.5 High voltage VM (V) Ta=25C Quiescent circuit current ICC2 (mA) 8 VCC=10V VCC= 6V 6 4 2 0 0 50 100 150 200 0 5 Ambient temperature (C) I OUT (A) Output on-state voltage Input threshold voltage 4 10 15 Input voltage VIN (V) Gate drive voltage 10 7 Input threshold voltage VIL (V) VCC=VIN=10V 3 I O=2A 2 1 I O=0.4A 0 -50 0 50 100 Ambient temperature (C) 150 6 Gate drive voltage VGL (V) Quiescent circuit current ICC2 (mA) 300 3.5 0 VOUT (ON) (V) 200 Quiescent circuit current supplied high voltage 150C VIN=0V VM=400V 150C 3.0 High voltage VM (V) Quiescent circuit current supplied high voltage 5 3.5 0 0 20 Operation voltage VCC (V) Output on-state voltage VCC=VIN1(2)=10V 150C Operating circuit current ICC3 (mA) 150C 125C Quiescent circuit current ICC2 (mA) Quiescent circuit current ICC1 (mA) VIN=0V 0 Output on-state voltage VOUT (ON) (V) Operating circuit current 3.0 3.0 5 4 VCC=10V 3 2 VCC=6V 8 VCC=10V 6 VCC=6V 4 2 1 0 -50 0 50 100 Ambient temperature (C) 150 0 -50 0 50 100 150 Ambient temperature (C) 57 High Voltage Full Bridge Drive IC SLA2403M Electrical Characteristics High side switch turn-on, off High side switch turn-on, off 5.0 5.0 Ta=25C VM=85V, I O=0.41A 2.0 turn-on 3.0 2.0 turn-on 6 8 10 12 0 -50 14 Operation voltage VCC (V) turn-off 3.0 turn-on 1.0 50 100 150 100 150 4 Power derating curve 50 Tc=25C 30 20 10 without heatsink 0 50 100 Ambient temperature (C) 150 6 8 10 12 14 Operation voltage VCC (V) Safe operating area (Power MOS FET) 100 RDS (on) limited 10 10s 100s 10 1 0.1 1ms 1 10ms 0.1 0.01 0.001 0.001 Ta=25C Single pulse 0.01 0.1 1 Power time (s) Ambient temperature (C) 0 -50 50 Drain current (A) 4.0 Transient thermal resistance (C/W) VM=85V, I O=0.41A VCC=10V 40 0 0 100 0 2.0 1.0 Transient thermal resistance characteristics 5.0 0 -50 turn-off Ambient temperature (C) Low side switch turn-on, off 2.0 3.0 turn-on 1.0 4 turn-on, off (s) 4.0 turn-off turn-on, off (s) turn-on, off (s) turn-on, off (s) turn-off 3.0 0 PD (W) Ta=25C VM=85V, I O=0.41A 4.0 1.0 Power derating 5.0 VM=85V, I O=0.41A VCC=10V 4.0 58 Low side switch turn-on, off 10 100 Ta=25C Single pulse 0.01 10 100 Drain to source voltage (V) 1000 59 Hall-Effect ICs Unipolar Switch Magnetic Characteristics [mT] (Ta=25C) Temperature Range (C) Package BOP (max) -40 to +150 BRP (min) Part No. External Dimensions Remarks BHYS (min) 45 12.5 7 UA / LT A3121L 1, 2 40 14 7 UA / LT A3122L 1, 2 44 18 7 UA / LT A3123L 16 1 2 UA / LT A3141L High-Sensitive 1, 2 23 7.5 3 UA / LT A3142L High-Sensitive 1, 2 34 16.5 3 UA / LT A3143L High-Sensitive 1, 2 35 5 2 UA / LT A3144L High-Sensitive 1, 2 1 (typ) UA / LT / LH A3240L Ultra-High-Sensitive, Chopper-Stabilized 1, 2, 3 0.5 UA / LT A3250L Programmable, Chopper-Stabilized 1, 2 5 0.5 Programmable BOP --BHYS 1, 2 Suffix ` ' is package option Bipolar Switch Temperature Range (C) Magnetic Characteristics [mT] (Ta=25C) BOP (max) -40 to +150 -40 to +125 BRP (min) Package BHYS (min) Part No. 5 -5 1 UA / LT A3134L 9.5 -9.5 3 UA / LT UGS3132 7.5 -7.5 3 UA / LT UGS3133 External Dimensions Remarks High-Sensitive 1, 2 1, 2 1, 2 Suffix ` ' is package option Bipolar Latch Temperature Range (C) Magnetic Characteristics [mT] (Ta=25C) Package Part No. External Dimensions Remarks BOP (max) BRP (min) BHYS (min) 27 -27 34 UA / LT A3185L 1, 2 15 -15 10 UA / LT A3187L 1, 2 18 -18 20 UA / LT A3188L 1, 2 23 -23 10 UA / LT A3189L 4 -4 UA / LT / LH A3280L Chopper-Stabilized -40 to +150 4.5 (typ) 1, 2 1, 2, 3 9 -9 10 (typ) UA / LT / LH A3281L Chopper-Stabilized 1, 2, 3 18 -18 30 (typ) UA / LT / LH A3283L Chopper-Stabilized 1, 2, 3 Suffix ` ' is package option Gear Tooth Sensor Temperature Range (C) Magnetic Characteristics [mT] BOP (max) 10 -40 to +150 3.5 Part No. External Dimensions 2 UGS3059KA 4 1 UGS3060KA 4 BRP (min) BHYS (min) -10 -3.5 Ratiometric, Linear Sensors Temperature Range (C) -40 to +150 Magnetic Characteristics [mT] Part No. Remarks Sense External Dimensions 50mV / mT A3515LUA Chopper-Stabilized 1 25mV / mT A3516LUA Chopper-Stabilized 1 Subassembly Part No. 60 Application External Dimensions ATS610LSA Large-tooth, gear-position sensing-crank angle, cam angle 5 ATS611LSB Fine-pitch, large air gap, gear speed sensing-transmission speed ABS 6 ATS612LSB Large / small-tooth gear-position sensing-crank angle, transmission speed, cam angle 6 Hall-Effect ICs External Dimensions (unit: mm) Figure 1 (UA) Figure 2 (LT) Figure 3 (LH) 3.10 2.90 4.17 4.04 0.45 0.30 4.40 4.60 1.57 1.47 45 1.40 1.60 1.62 1.83 3.10 2.97 3.94 4.25 45 2.29 2.60 0.89 1.20 1 1 2 3 2.01 2 0.35 0.44 3 2.10 1.85 0.36 0.48 0.38 15.24 MIN 2 3.00 2.70 0.25 MIN 0.55 REF 3 0 to 8 0.95 BSC 0.44 0.56 1.10 0.90 1.50 BSC 3.00 BSC 0.41 1 2.13 2.29 0.79 0.43 0.20 0.15 0.15 0.00 1.25 0.90 1.27 BSC Figure 4 (KA) 6.45 6.32 1.60 1.50 4.65 4.50 45 1.96 1 2 3 4 0.43 0.38 12.70 MIN 0.41 0.46 5 1.27 BSC Figure 5 (SA) 1.27 TYP 1 2 9.0 5.0MIN 3 0.41 0.38 3.90 3.0 0.9 DIA 8.1 Figure 6 (SB) 1.27 TYP 1 2 7.0MIN 3 0.38 9.0 2.0 7.0 0.41 3.90 3.0 0.9 DIA 8.0 2.0 8.9 61 Custom IC Various processing technologies of BIP, BiCMOS, CMOS and BCD can be used for the semiconductor chips. Meets detailed user needs, especially power ICs. A wide range of general-purpose ICs is also available. Employs a monolithic chip with flip-chip construction for increased reliability making it ideal for car electronic devices. Also available in hybrid ICs with transfer mold construction, multi-chip IC configuration and power monolithic IC configuration. Features Examples of Sanken Automotive Hybrid ICs All semiconductor chips used are manufactured by Sanken. Main product lineup consists of power ICs produced out of many Lead frame type multi-chip power IC One-chip power IC Lead frame type power hybrid IC with ceramic substrate High-output high-breakdown voltage IC Simplified integration of custom circuits Distribution of unit functions (Actuators may be built in the device) years' experience of Sanken. Uses monolithic chips with flip-chip construction. Mainly available in miniature transfer-mold packages. Examples of Custom Hybrid IC Products Regulators for alternators Igniters Power supply for microcomputer system Power steering control IC Motor and actuator driver Others Surface-mount power IC 62 Custom IC External Dimensions (unit: mm) 4.2 4.0 20.2 16.9 19.9 4.0 25.25 9.0 10.0 9.0 5.0 15.6 STA 10pin STA 8pin FM205 MT-100 SMA15pin 4.0 4.0 SLA18pin 16.0 3GR-F 3GR-M 5.5 5.5 19.8 23 16.0 STR-S SPM 5.5 24.2 23 15.6 4.8 31.0 4.8 31.0 4.8 31.0 10.2 10.2 31.0 23 31.0 SLA15pin SLA12pin 16 SMA12pin SMD16pin SPF16pin 12.05 16 15 14 13 12 11 10 9 9 16.1 7.5 6.8 9.8 16 Pin 1 20.0 8 2 3 4 5 6 7 8 2.5 4.0 1 SPF20pin 10.5 4.8 35 SPF24pin +0.1 1.0 - 0.05 17.28 Fin thickness 24 13 7.5 20.2 7.50.2 11 10.50.3 20 10.6 14.740.2 13.040.2 10 1 +0.15 0.4 - 0.05 2.50.2 1.270.25 12 +0.15 0.25 - 0.05 2.5 1 63 Transistors and MOS FETs Index by Application Application 64 Part No. Page Igniters 2SD2141 MN638S 74 80 Injectors 2SC4153 2SD2382 MN611S STA461C STA463C STA464C STA508A SDC09 SDK09 SPF0001 73 75 79 84 85 86 99 90 105 91 AT (Automatic Transmissions) 2SA1488 2SA1488A 66 66 Cruise controls 2SA1568 2SC4065 SLA8004 68 72 87 Airbag systems 2SA1567 SDA03 SDA04 67 88 89 Boosters for power supply of microcomputers 2SA1488 FP812 66 78 Power steering FKV460 FKV460S FKV560 FKV560S FKV660 FKV660S 93 94 95 96 97 98 ABS SLA5027 SDK08 102 104 Electronic meters 2SC3852 70 Solenoid drivers STA315A STA335A STA415A STA509A SDK06 SDK08 81 82 83 100 103 104 Clutch controls 2SC4024 71 Lamp controls 2SK2701 SMA5113 92 101 Others 2SC3851 FN812 2SD2633 69 77 76 Transistors and MOS FETs Index by Load Load Current Approx. 0.5A Approx. 1.2A Approx. 3A Approx. 5A 10A and over Part No. Chip Single Package Avalanche Diode TO220F TO220S Multi-chip Package SPF SD (Surface-mount) (Surface-mount) STA SMA SLA Remarks 2SA1488A Single 25W 2SC3851 Single 25W 2SC3852 Single 25W STA315A Single * 3 35V 13.5W Es/b=50mJ STA335A Single * 2 35V 12W Es/b=150mJ STA415A Single * 4 35V 18W Es/b=50mJ STA509A MOS * 4 52V 20W Es/b=40mJ SDK06 MOS * 4 52V 3W 2SA1488 Single 25W 2SC3851 Single 25W 2SC4153 Single 30W MN611S Single 115V Es/b=40mJ VCEO=120V 60W Es/b=45mJ SPF0001 Single * 2 SDA03 Single * 4 3W SDA04 Single * 2 2.5W SDC09 Single * 2 SDK08 MOS * 4 3W SDK09 MOS 3W Es/b=45mJ 2.5W 65V 2.8W Es/b=80mJ STA461C Single * 2 65V 18W Es/b=80mJ STA463C Single * 2 115V 18W Es/b=45mJ STA464C Single * 4 4W Es/b=80mJ STA508A MOS * 4 20W SMA5113 MOS * 4 2SA1567 Single 2SD2382 Single 2SK2701 35W VDSS=450V 35W 30W Es/b=200mJ MOS 35W VDSS=450V FP812 Single 35W FN812 Single 35W 65V SLA8004 Single * 4 2SA1568 Single 35W 2SC4024 Single 35W 2SC4065 Single 35W 2SD2141 Darlington 2SD2633 Darlington MN638S Darlington SLA5027 MOS * 4 40W 380V 35W Es/b=210mJ 35W 60W 380V 40W FKV460 MOS 40W RDS (ON) =9m max FKV560 MOS 40W RDS (ON) =11m max FKV660 MOS 40W RDS (ON) =14m max FKV460S MOS 60W RDS (ON) =9m max FKV560S MOS 60W RDS (ON) =11m max FKV660S MOS 60W RDS (ON) =14m max 65 Power Transistor 2SA1488/1488A IEBO V(BR) CEO hFE VCE (sat) fT COB VCB = VEB = -6V IC = -25mA VCE = -4V, IC = -1A IC = -2A, IB = -0.2A VCE = -12V, IE = -0.2A VCB = -10V, f = 1MHz 10.0 a b RL () 6 IC (A) -2 VBB1 (V) -10 VBB2 (V) 5 IB1 (mA) -200 2.54 IB2 t on t stg tf (mA) (s) (s) (s) 200 0.25typ 0.75typ 0.25typ 0.45 2.54 2.2 a) Part No. b) Lot No. (Unit: mm) B C E IC --VCE Characteristics (typ.) -60mA -50mA -40mA -3 -1A 0 0 -1 -2 -3 -4 -5 0 -0.01 -6 -0.05 -0.1 VCE (V) -0.5 0 -1 0 ) tu re tu re p e ra -1.0 -1.5 VBE (V) hFE --IC Temperature Characteristics (typ.) (VCE = -4V) 500 e te m -0.5 IB (A) hFE --IC Characteristics (typ.) (C a s C 125 -2A ) re) atu -1 IC = -3A IB = -5mA p e ra per -0.5 -1 - 3 0 C -10mA -2 tem -20mA -2 -1.0 se VCE (sat) (V) IC (A) -30mA IC (A) -3 e te m -8 ( VCE = -4 V) -4 (C a s 0m IC --VBE Temperature Characteristics (typ.) -1.5 2 5 C A VCE (sat)--IB Characteristics (typ.) (Ca -4 C0.5 2.6 1.35 1.35 0.85 Typical Switching Characteristics (common emitter) VCC (V) -12 4.2 2.8 3.3 16.9 ICBO (13.5) V V V A A W C C Test Conditions 4 VCBO VCEO VEBO IC IB PC Tj Tstg Symbol Unit External Dimensions TO220F (full-mold) 8.4 Symbol (Ta = 25C) Ratings Unit 2SA1488 2SA1488A A -100max -100max -60 -80 V A -100max -60min -80min V 40min V -0.5max 15typ MHz 90typ pF 0.8 Ratings 2SA1488 2SA1488A -80 -60 -60 -80 -6 -4 -1 25 (Tc = 25C) 150 -55 to +150 3.9 Electrical Characteristics Absolute Maximum Ratings (Ta=25C) j-a --t (VCE = -4V ) 200 Characteristics 5 125C 100 (C/W) -30C hFE hFE 25C 100 Typ j-a 50 50 1 20 -0.01 -0.1 -0.5 -1 20 -0.02 -4 -0.1 -1 IC (A) 10 100 IC (A) f T --IE Characteristics (typ.) PC --Ta Derating 30 -10 -5 50 100ms 10 1m natural air cooling Silicone grease Aluminum heatsink Unit: mm s m s PC (W) 30 -1 -0.5 Without heatsink natural air cooling 20 10 0 0.005 0.01 W 0.05 0.1 0.5 1 3 3 5 0* 10 10 50 VCE (V) 100 ith in 15 -0.1 -0.05 IE (A) 66 20 DC Typ IC (A) fT (MHz) 40 1000 t (ms) Safe Operating Area (single pulse) (VCE = -12V) 60 -4 0.7 1 2 0 0 15 0* 100 fin ite he 2 at si nk * 10 0 50 * * 2 50 * 2 Without heatsink 25 50 75 Ta (C) 100 125 150 Power Transistor 2SA1567 Test Conditions VCB = -50V VEB = -6V IC = -25mA VCE = -1V, IC = -6A IC = -6A, IB = -0.3A VCE = -12V, IE = -0.5A VCB = -10V, f = 1MHz ICBO IEBO V(BR) CEO hFE VCE (sat) fT COB Ratings -100max -100max -50min 50min -0.35max 40typ 330typ (Ta=25C) Unit A A V External Dimensions TO220F (full-mold) 10.0 4.2 2.8 3.3 V MHz pF a b 2.6 VCC (V) -24 RL () 4 IC (A) -6 VBB1 (V) -10 VBB2 (V) 5 IB1 (mA) -120 1.35 1.35 0.85 IB2 t on t stg tf (mA) (s) (s) (s) 120 0.4typ 0.4typ 0.2typ 2.54 (13.5) Typical Switching Characteristics (common emitter) 0.45 2.54 2.2 a) Part No. b) Lot No. (Unit: mm) B C E IC --VCE Characteristics (typ.) -10 -4 -5 0 -2 -6 -10 -100 VCE (V) hFE --IC Characteristics (typ.) -0.2 -0.4 j-a --t (VCE = -1V ) 500 C (C a -0.6 -0.8 -1.0 -1.2 VBE (V) hFE --IC Temperature Characteristics (typ.) (VCE = -1V) Characteristics 4 125C Typ 25C 100 1 j-a 100 (C/W) hFE - 30C hFE 0 0 -1000 -3000 IB (mA) 500 25 12 0 -3 -2 -1A -5mA -2 (Ca -3A -10mA -1 -4 -9A -6A rat ure ) se t emp era C (C ture ase ) te m p e ra tu re ) IC = -12A -0.5 -30 -20mA pe -4 -6 tem -40mA -8 se -6 -1.0 IC (A) -60mA -2 ( VCE = -4 V) -12 -100mA -8 0 IC --VBE Temperature Characteristics (typ.) 5C 0mA -15 VCE (sat) (V) IC (A) -10 VCE (sat)--IB Characteristics (typ.) -1.5 I -20B = 0m A -12 C0.5 16.9 Symbol 4 Electrical Characteristics Unit V V V A A W C C 8.4 Ratings -50 -50 -6 -12 -3 35 (Tc = 25C) 150 -55 to +150 3.9 Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 0.8 Absolute Maximum Ratings (Ta = 25C) 0.5 50 50 30 -0.02 30 -0.02 -0.1 -1 -10 -0.1 -1 IC (A) 10 1000 PC --Ta Derating 35 -30 -10 10 DC -5 1m s natural air cooling Silicone grease Aluminum heatsink Unit: mm 30 0m s s Typ 100 m ite -0.1 0 0.05 0.1 1 IE (A) 12 -0.05 -3 -5 -10 -50 VCE (V) -100 2 0 0 150 *1 * 10 50 * 2 0* 2 50 * 50 * 2 100 nk 20 10 si Without heatsink natural air cooling at -0.5 he PC (W) 20 fin -1 in 30 ith IC (A) W fT (MHz) 1 t (ms) Safe Operating Area (single pulse) (VCE = -12V) 10 40 0.3 IC (A) f T --IE Characteristics (typ.) 50 -10 Without heatsink 25 50 75 100 125 150 Ta (C) 67 Power Transistor 2SA1568 ICBO IEBO V(BR) CEO hFE VCE (sat) VFEC fT COB Ratings -100max -60max -60min 50min -0.35max -2.5max 40typ 330typ (Ta=25C) Unit A mA V External Dimensions TO220F (full-mold) 10.0 V V MHz pF a b RL () 4 IC (A) -6 VBB1 (V) -10 VBB2 (V) 5 IB1 (mA) -120 IB2 t on t stg tf (mA) (s) (s) (s) 120 0.4typ 0.4typ 0.2typ 2.54 0.45 2.54 2.2 a) Part No. b) Lot No. B C E IC -- VCE Characteristics (typ.) I -20 B = 0m A -12 -10 VCE (sat) -- IB Characteristics (typ.) ( VCE = -1 V) -12 -100mA -10 -1.0 0 -1 -2 -3 -4 -5 0 -7 -10 -6 -100 VCE (V) 125C Typ ) -0.2 -0.4 ) tu re p e ra s e te m C (C a -30 25 -0.8 -1.0 -1.2 j-a -- t Characteristics 4 -30C (C/W) 1 j-a hFE 10 10 -0.6 25C 100 hFE (VCE = -1V ) 300 100 re) ure 0 VBE (V) hFE -- IC Temperature Characteristics (typ.) (VCE = -1V) 300 0 -1000 -3000 IB (mA) hFE -- IC Characteristics (typ.) atu rat -2 12 0 per pe -10mA -2 tem -4 -1A C (C ase -0.5 -20mA -6 -3A tem -4 -9A -6A se -40mA (Ca -6 -8 IC = -12A 5C -60mA IC (A) VCE (sat) (V) -8 IC (A) (Unit : mm) IC -- VBE Temperature Characteristics (typ.) -1.4 mA -150 C0.5 2.6 1.35 1.35 0.85 Typical Switching Characteristics (common emitter) VCC (V) -24 4.2 2.8 3.3 16.9 Test Conditions VCB = -60V VEB = -6V IC = -25mA VCE = -1V, IC = -6A IC = -6A, IB = -0.3A IECO = -10A VCE = -12V, IE = 0.5A VCB = -10V, f = 1MHz (13.5) Symbol 4 Electrical Characteristics Unit V V V A A W C C 8.4 Ratings -60 -60 -6 12 -3 35 (Tc=25C) 150 -55 to +150 0.8 Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 3.9 Absolute Maximum Ratings (Ta=25C) 0.5 2 -0.02 -0.1 -1 IC (A) -10 -12 f T -- IE Characteristics (typ.) -1 -10 -12 Safe Operating Area (single pulse) 0.3 10 1000 PC -- Ta Derating 10 DC 0m s natural air cooling Silicone grease Aluminum heatsink Unit: mm 30 s -5 1m s fin ite 0* 10 50 * 50 * 2 -0.1 0 0.05 0.1 1 IE (A) 10 -0.05 -3 -5 -10 -50 VCE (V) -100 2 0 * 15 nk 20 si 150 at Without heatsink natural air cooling he PC (W) 20 in -1 ith IC (A) W 30 -0.5 68 100 35 -10 Typ 1 t (ms) -30 m 10 fT (MHz) -0.1 IC (A) (VCE = -12V) 50 40 2 -0.02 100 2 * 10 0*2 Without heatsink 0 25 50 75 Ta (C) 100 125 150 Power Transistor 2SC3851 Electrical Characteristics External Dimensions TO220F (full-mold) 10.0 4.2 2.8 3.3 C0.5 16.9 V MHz pF a b 2.6 3.9 ICBO IEBO V(BR) CEO hFE VCE (sat) fT COB (Ta=25C) Unit A A V Ratings 100max 100max 60min 40 to 320 0.5max 15typ 60typ Test Conditions VCB = 80V VEB = 6V IC = 25mA VCE = 4V, IC = 1A IC = 2A, IB = 0.2A VCE = 12V, IE = -0.2A VCB = 10V, f = 1MHz 4 Symbol 8.4 Unit V V V A A W C C 1.35 1.35 0.85 Typical Switching Characteristics (common emitter) VCC (V) 12 RL () 6 IC (A) 2 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 200 IB2 t on t stg tf (mA) (s) (s) (s) -200 0.2typ 1typ 0.3typ 2.54 (13.5) Ratings 80 60 6 4 1 25 (Tc=25C) 150 -55 to +150 Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 0.8 Absolute Maximum Ratings (Ta=25C) 0.45 2.54 2.2 a) Part No. b) Lot No. B C E (Unit : mm) IC -- VCE Characteristics (typ.) VCE (sat) -- IB Characteristics (typ.) ( VCE = 4 V) 4 60mA 50mA 1.0 ) ure r a tu s e te mpe C (C a 12 -30 IC =1A re) re) rat atu pe per se C (C a 1 2A 5mA tem tem 3A 1 25 10mA 2 0.5 se 20mA 2 3 (Ca VCE (sat) (V) 30mA 5C 40mA 3 IC (A) IC -- VBE Temperature Characteristics (typ.) IC (A) I 70 B = m A 4 0 0 1 2 3 4 5 0 0.005 0.01 6 0.05 0.1 VCE (A) 0.5 0 1 hFE -- IC Characteristics (typ.) 50 -30C 50 0.5 1 4 20 0.01 0.05 0.1 IC (A) 0.5 0.5 1 10 100 1000 PC -- Ta Derating 30 1m s 10 m s 5 10 0m PC (W) ni te he at si nk 0.5 fi 1 in IC (A) 20 h Typ s it DC W fT (MHz) 4 1 t (ms) 10 30 20 1 Safe Operating Area (single pulse) (VCE = 12V) 40 Characteristics IC (A) f T -- IE Characteristics (typ.) 1.2 5 j -a hFE hFE 25C 100 1.0 (C/W ) 125C 100 j-a -- t (VCE = 4V ) 500 Typ 0.1 0.5 VBE (V) hFE -- IC Temperature Characteristics (typ.) (VCE = 4V) 500 20 0.01 0 IB (mA) 10 10 Without heatsink natural air cooling 0.1 0 -0.005 -0.1 IE (A) -0.5 -1 -4 0.05 3 Without heatsink 5 10 VCE (V) 50 80 0 0 50 100 150 Ta (C) 69 Power Transistor 2SC3852 (Ta=25C) Unit A A V Ratings 10max 100max 60min 500min 0.5max 15typ 50typ External Dimensions TO220F (full-mold) 10.0 4.2 2.8 3.3 C0.5 16.9 V MHz pF a b 2.6 1.35 1.35 0.85 Typical Switching Characteristics (common emitter) VCC (V) 20 RL () 20 IC (A) 1.0 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 15 IB2 t on t stg tf (mA) (s) (s) (s) -30 0.8typ 3.0typ 1.2typ 2.54 (13.5) 3.9 ICBO IEBO V(BR) CEO hFE VCE (sat) fT COB Test Conditions VCB = 80V VEB = 6V IC = 25mA VCE = 4V, IC = 0.5A IC = 2A, IB = 50mA VCE = 12V, IE = -0.2A VCB = 10V, f = 1MHz 8.4 Symbol 4 Electrical Characteristics Unit V V V A A W C C Ratings 80 60 6 3 1 25 (Tc=25C) 150 -55 to +150 Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 0.8 Absolute Maximum Ratings (Ta=25C) 0.45 2.54 2.2 a) Part No. b) Lot No. B C E (Unit : mm) IC -- VCE Characteristics (typ.) VCE (sat) -- IB Characteristics (typ.) 3 mA =1 3 1.0 2 ( VCE = 4 V) 8mA 2 IB IC -- VBE Temperature Characteristics (typ.) 1.5 0 1 2 3 4 5 0 0.001 0.005 0.01 VCE (V) 0.05 0.1 (C a s e te mp e ra tu re ) re ) ure 25C - 3 0 C 0.5 0 1.0 1.1 VBE (V) hFE -- IC Temperature Characteristics (typ.) (VCE=4V) 2000 ra tu rat 0 0.5 1 IB (A) hFE -- IC Characteristics (typ.) (C a C 125 2A IC =1A 6 s e te mpe pe 1 3A 0.5mA 0 tem 0.5 1mA se 1 (Ca 2mA IC (A) VCE (sat) (V) IC (A) 3mA ) 5mA 2 j-a -- t (VCE = 4V ) 2000 Characteristics 5 125C 1000 25C 500 -30C j-a 500 (C/W) Typ hFE hFE 1000 100 0.01 0.1 0.5 1 3 100 0.01 0.1 IC (A) 3 1 10 30 s 1m 10 10 ms 0m s 20 1 nk si at he 0.5 ite fin in PC (W) ith W DC IC (A) VCB = 10V IE = -2A 1000 PC -- Ta Derating 10 20 Typ 100 t (ms) Safe Operating Area (single pulse) (VCE = 12V) 5 fT (MHz) 1 0.5 IC (A) f T -- IE Characteristics (typ.) 30 0.5 1 10 10 Without heatsink natural air cooling 0.1 0 -0.005 -0.01 -0.05 -0.1 IE (A) 70 -0.5 -1 -2 0.05 3 Without heatsink 5 10 50 VCE (V) 100 0 0 50 100 Ta (C) 150 Power Transistor 2SC4024 Electrical Characteristics ICBO IEBO V(BR) CEO hFE VCE (sat) fT COB (Ta=25C) Unit A A V Ratings 10max 10max 50min 300 to 1600 0.5max 24typ 150typ External Dimensions TO220F (full-mold) 10.0 4.2 2.8 3.3 C0.5 V MHz pF 16.9 Test Conditions VCB = 100V VEB = 15V IC = 25mA VCE = 4V, IC = 1A IC = 5A, IB = 0.1A VCB = 12V, IE = -0.5A VCB = 10V, f = 1MHz 4 Symbol Unit V V V A A W C C 8.4 a b 2.6 1.35 1.35 0.85 Typical Switching Characteristics (common emitter) VCC (V) 20 RL () 4 IC (A) 5 IB1 (A) 0.1 IB2 (A) -0.1 t on (s) 0.5typ t stg (s) 2.0typ tf (s) 0.5typ 2.54 (13.5) Ratings 100 50 15 10 3 35 (Tc=25C) 150 -55 to +150 3.9 Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 0.8 Absolute Maximum Ratings (Ta=25C) 0.45 2.54 2.2 a) Part No. b) Lot No. B C E (Unit: mm) IC -- VCE Characteristics (typ.) VCE (sat) -- IB Characteristics (typ.) 10 IC -- VBE Temperature Characteristics (typ.) IB = 35mA 30mA 8 ( VCE = 4 V) 10 1.5 8 4 0 0.002 6 0.1 1 ) ure ) re) rat tu re atu p e ra s e te m se C (C a C ( Ca 0.5 1.0 1.2 VBE (V) hFE -- IC Temperature Characteristics (typ.) (VCE = 4V) per pe 0 0 2 IB (A) 1000 25 -30 0.01 VCE (V) hFE -- IC Characteristics (typ.) tem e t em 2 5A 3A IC = 1A (C 10A 5mA 2 as 4 0.5 2 0 0 6 5C 10mA 4 1.0 12 15mA IC (A) 20mA 6 IC (A) VCE (sat) (V) 25mA j-a -- t (VCE = 4V ) 1000 Characteristics 4 25C hFE C -30 1 j-a hFE 500 (C/W) 125C Typ 500 0.5 0.1 0.5 1 5 10 100 0.02 0.1 0.5 IC (A) f T -- IE Characteristics (typ.) 10 0.3 1 10 10 m s 10 0m s PC -- Ta Derating 1m s 30 20 ite he 150 5 50 10 VCE (V) 100 2 0 * 15 0 *2 1 50 * 50 * 2 00 * 10 0* Without heatsink 0 25 50 nk -10 10 Without heatsink natural air cooling si -5 at -1 IE (A) fin -0.5 0.2 3 in IC (A) ith DC 1 0.5 natural air cooling Silicone grease Aluminum heatsink Unit: mm W fT (MHz) 5 10 1000 40 10 20 100 t (ms) 30 Typ 0 -0.05 -0.1 5 Safe Operating Area (single pulse) (VCE = 12V) 30 1 IC (A) PC (W) 100 0.02 2 75 100 125 150 Ta (C) 71 Power Transistor 2SC4065 ICBO IEBO V(BR) CEO hFE VCE (sat) VFEC fT COB (Ta=25C) Unit A mA V Ratings 100max 60max 60min 50min 0.35max 2.5max 24typ 180typ External Dimensions TO220F (full-mold) 10.0 V V MHz pF a b RL () 4 IC (A) 6 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.12 C0.5 2.6 1.35 1.35 0.85 Typical Switching Characteristics (common emitter) VCC (V) 24 4.2 2.8 3.3 16.9 Test Conditions VCB = 60V VEB = 6V IC = 25mA VCE = 1V, IC = 6A IC = 6A, IB = 1.3A VECO = 10A VCE = 12V, IE = -0.5A VCB = 10V, f = 1MHz 2.54 IB2 t on t stg tf (A) (s) (s) (s) -0.12 0.6typ 1.4typ 0.4typ (13.5) Symbol 4 Electrical Characteristics (Ta=25C) Unit V V V A A W C C 8.4 Ratings 60 60 6 12 3 35 (Tc=25C) 150 -55 to +150 0.8 Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 3.9 Absolute Maximum Ratings 0.45 2.54 2.2 a) Part No. b) Lot No. B C E (Unit: mm) IC -- VCE Characteristics (typ.) mA 0 15 ( VCE = 1 V) 12 100mA 10 1.0 2 0 4 0.1 VCE (V) 0 3 50 50 10 C 125 C 25 C 0 3 - 10 0.1 1 5 3 0.02 10 12 0.1 1 IC (A) 10 12 0.2 1 10 re ) ra tu ite he at si 10 5 10 50 VCE (V) 100 2 0 nk 72 fin 20 0.1 -5 -10 -12 in PC (W) ith 1 Without heatsink natural air cooling -1 e te mpe 30 s W IC (A) 0m natural air cooling Silicone grease Aluminum heatsink Unit: mm 1m s 0.5 IE (A) 1000 PC -- Ta Derating s fT (MHz) m 10 10 DC 20 -0.5 100 40 5 0.05 3 (C a s 0.5 30 10 10 - 3 0 C 1 t (ms) Safe Operating Area (single pulse) (VCE = 12V) Typ 0 -0.05 -0.1 Characteristics 5 IC (A) f T -- IE Characteristics (typ.) 30 5C j-a -- t j-a hFE 100 100 (VCE = 1V) 400 Typ 1.0 1.1 0.5 VBE (V) hFE -- IC Temperature Characteristics (typ.) (VCE = 1V) 400 5 3 0.02 0 IB (A) hFE -- IC Characteristics (typ.) hFE 1 re) ure ) 0 0.005 0.01 6 2 (C/W) 0 6A 3A IC = 1A 9A 12 2 atu rat pe 4 12A IB = 10mA per tem 20mA 4 6 0.5 tem 6 8 C (C ase 40mA 25 VCE (sat) (V) 8 se 60mA IC (A) IC -- VBE Temperature Characteristics (typ.) 1.3 (Ca 10 VCE (sat) -- IB Characteristics (typ.) IC (A) 20 0m A 12 150 * 15 0* 2 1 50 * 50 * 2 00 * 10 0*2 Without heatsink 0 25 50 75 Ta (C) 100 125 150 Power Transistor 2SC4153 External Dimensions TO220F (full-mold) 10.0 V V MHz pF a b RL () 16.7 IC (A) 3 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.3 C0.5 2.6 1.35 1.35 0.85 Typical Switching Characteristics (common emitter) VCC (V) 50 4.2 2.8 3.3 16.9 ICBO IEBO V(BR) CEO hFE VCE (sat) VBE (sat) fT COB (Ta=25C) Unit A A V Ratings 100max 100max 120min 70 to 220 0.5max 1.2max 30typ 110typ (13.5) Test Conditions VCB = 200V VEB = 8V IC = 50mA VCE = 4V, IC = 3A IC = 3A, IB = 0.3A IC = 3A, IB = 0.3A VCE = 12V, IE = -0.5A VCB = 10V, f = 1MHz 8.4 Symbol Unit V V V A A W C C 0.8 Ratings 200 120 8 7 (pulse 14) 3 30 (Tc=25C) 150 -55 to +150 3.9 Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 4 Electrical Characteristics Absolute Maximum Ratings (Ta=25C) 2.54 IB2 t on t stg tf (A) (s) (s) (s) -0.6 0.5max 3max 0.5max 0.45 2.54 2.2 a) Part No. b) Lot No. B C E (Unit: mm) IC -- VCE Characteristics (typ.) 7 VCE (sat) -- IB Characteristics (typ.) mA 200 5 IC -- VBE Temperature Characteristics (typ.) 3 ( VCE = 4 V) 7 0mA 15 6 A 100m 1 2 3 0.1 VCE (V) 1 re ) ra tu atu rat j-a -- t (VCE = 4V) 300 e te m pe (C a s - 3 0 C 1.0 1.1 0.5 VBE (V) hFE -- IC Temperature Characteristics (typ.) (VCE = 4V) 300 per pe tem 0 0 2 IB (A) hFE -- IC Characteristics (typ.) re) ure ) 0 0.005 0.01 4 1 5A 3A IC = 1A 0 C (C a 5C 1 0 se t em se 2 IB =10mA 25 2 3 1 (Ca 20mA 4 12 3 5 2 IC (A) 4 60mA 40mA VCE (sat) (V) IC (A) 5 Characteristics 5 125C Typ 100 C -30 20 0.01 0.1 0.5 1 j-a 50 50 20 0.01 5 7 0.1 f T -- IE Characteristics (typ.) 1 5 7 0.5 0.2 1 10 20 20 W 0.1 -0.1 -1 IE (A) -5 0.05 5 10 50 VCE (V) 100 200 2 0 2 00 nk Without heatsink natural air cooling 0* *1 si 50 * 50 * 2 15 100 at 0* he 15 10 10 ite 0.5 fin 1 in PC (W) ith IC (A) natural air cooling Silicone grease Aluminum heatsink Unit: mm s 10m 20 30 0 s 5 30 1000 PC -- Ta Derating 10 10 Typ 0 -0.01 100 t (ms) Safe Operating Area (single pulse) (VCE = 12V) 40 0.5 1 IC (A) IC (A) fT (MHz) (C/W) hFE hFE 25C 100 *2 Without heatsink 0 25 50 75 100 125 150 Ta (C) 73 Power Transistor 2SD2141 Test Conditions VCB = 330V VEB = 6V IC = 25mA VCE = 2V, IC = 3A IC = 4A, IB = 20mA ICBO IEBO V(BR) CEO hFE VCE (sat ) Ratings 10max 20max 330 to 430 1500min 1.5max (Ta=25C) Unit A A V External Dimensions TO220F (full-mold) 10.0 4.2 2.8 3.3 C0.5 16.9 Symbol 4 Electrical Characteristics Unit V V V A A W C C V a b 2.6 0.8 Ratings 38050 38050 6 6 (pulse 10) 1 35 (Tc=25C) 150 -55 to +150 3.9 Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 8.4 Absolute Maximum Ratings (Ta=25C) 2.54 (13.5) 1.35 1.35 0.85 0.45 2.54 2.2 a) Part No. b) Lot No. B C E (Unit: mm) IC -- VCE Characteristics (typ.) VCE (sat) -- IB Characteristics (typ.) ( VCE = 4 V) 10 A 20m A 90m 0mA 6 A 18m 4mA 0 2 4 0 6 0.2 0.5 1 5 VCE (V) 10 re ) e) j-a -- t (VCE = 2V) 10000 5000 Typ ra tu ure - 3 0 C C ( Ca 2.0 2.4 VBE (V) hFE -- IC Temperature Characteristics (typ.) (VCE = 2V) 10000 5000 25 1.0 IB (mA) hFE -- IC Characteristics (typ.) ) ur 0 0 50 100 200 (C a s se (C C 5 12 0 rat pe tem te 1A e te m pe mp 3A 1 5 at IC = 7A 5A as IB = 1mA er VCE (sat) (V) 5 2 e 150mA 120mA 2mA IC (A) IC -- VBE Temperature Characteristics (typ.) 3 IC (A) 10 Characteristics 5 25 (C/W) 1000 500 C 5C -5 1 j-a hFE hFE 5C 12 1000 500 100 50 0.5 100 50 10 0.02 0.1 0.5 1 5 20 0.02 10 0.1 0.5 1.0 IC (A) 10 0.1 1 10 100 IC (A) f T -- IE Characteristics (typ.) PC -- Ta Derating 40 20 natural air cooling Silicone grease Aluminum heatsink Unit: mm 10 DC 30 ite he PC (W) 20 fin IC (A) in 0.5 ith 1 20 W at fT (MHz) 1ms 5 30 s 10m s 0m 10 Typ 1000 t (ms) Safe Operating Area (single pulse) (VCE = 12V) 40 5 si 0 -0.01 -0.05 -0.1 -0.5 -1 IE (A) 74 Without heatsink natural air cooling -5 0.01 1 150 10 0.05 nk 0.1 10 * 15 50 * 50 * 2 100 * 5 10 50 100 VCE (V) 500 2 0 Without heatsink 0 25 50 0* 100 2 *2 75 Ta (C) 100 125 150 Power Transistor 2SD2382 ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b (Ta=25C) Unit A A V Ratings 10max 10max 60 to 70 700 to 3000 0.15max 1.5max 200min External Dimensions TO220F (full-mold) 10.0 4.2 2.8 3.3 C0.5 V V mJ 16.9 Test Conditions VCB = 60V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse 8.4 Symbol Unit V V V A A W C C a b 2.6 0.8 1.35 1.35 0.85 Typical Switching Characteristics VCC (V) 12 RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 30 IB2 (mA) -30 t on (s) 0.25 t stg (s) 0.8 tf (s) 0.35 2.54 (13.5) Ratings 655 655 6 6 (pulse 10) 1 30 (Tc=25C) 150 -55 to +150 3.9 Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 4 Electrical Characteristics Absolute Maximum Ratings (Ta=25C) 0.45 2.54 2.2 a) Part No. b) Lot No. B C E (Unit: mm) IC -- VCE Characteristics (typ.) 10 VCE (sat) -- IB Temperature Characteristics (typ.) 20mA IC -- VBE Temperature Characteristics (typ.) (IC = 1.5A) 0.75 6 30mA 5 8 5mA 4 3mA 2 0 4 0.5 IC (A) VCE (sat) (V) IC (A) 10mA 6 Ta = -55C 25C 75C 125C 0.25 2 IB = 1mA 0 1 2 3 4 Ta=55C 25C 75C 125C 3 1 0 5 1 5 10 VCE (V) 50 100 0 400 0 0.5 IB (mA) hFE -- IC Characteristics (typ.) hFE -- IC Temperature Characteristics (typ.) (VCE = 1V) 5000 1.0 1.5 VBE (V) j-a -- t (VCE = 1V) 5000 Characteristics 5 1000 500 Ta = -55C 25C 75C 125C 100 100 0.05 0.1 0.5 1 5 10 50 30 0.01 0.05 0.1 0.5 IC (A) 5 10 0.3 1 5 10 50 100 30 D. (T = at si nk 50 * 5 0 Without heatsink natural air cooling 5 he 10 0.5 ite 15 0 100 * 150 * *1 00 2 *2 fin 25 C ) in 1 20 ith c natural air cooling Silicone grease Aluminum heatsink Unit: mm W IC (A) C c mse 0.5 ec 1ms c e ms 10 c se 0m 10 5 Typ 10 PC -- Ta Derating 20 10 15 500 1000 t (ms) Safe Operating Area (single pulse) (VCE = 1V) 25 20 1 IC (A) f T -- IE Characteristics (typ.) 30 0.5 PC (W) 50 30 0.01 1 j-a hFE hFE 500 fT (MHz) (C/W) Typ 1000 *2 Without heatsink 0 -0.01 0.1 -0.05 -0.1 -0.5 -1 IE (A) -5 -10 1 5 10 VCE (V) 50 100 0 0 50 100 150 Ta (C) 75 Power Transistor 2SD2633 Tj Tstg W ICBO IEBO VCEO hFE VCE (sat) VBE (sat) Test Conditions VCB=200V VEB=6V IC=50mA VCE=2V, IC=6A IC=6A, IB=6mA IC=6A, IB=6mA Ratings 100max 10max 150min 2000min 1.5max 2.0max (Ta=25C) Unit A mA V External Dimensions TO220F (full-mold) 10.0 4.2 2.8 3.3 C0.5 V V 16.9 Symbol 4 Electrical Characteristics 8.4 Unit V V V A A a b 2.6 C C 1.35 1.35 0.85 2.54 2.54 (13.5) PC Ratings 200 150 6 8 1 35 (Tc=25C) 2 (Ta=25C, No Fin) 150 -55 to +150 0.8 Symbol VCBO VCEO VEBO IC IB 3.9 Absolute Maximum Ratings (Ta=25C) 0.45 2.2 B C E 76 a) Part No. b) Lot No. (Unit: mm) Power Transistor FN812 ICBO IEBO VCEO hFE VCE (sat) (Ta=25C) Unit A A V Ratings 10max 10max 100min 70min 0.3max External Dimensions TO220F (full-mold) 10.0 V a b Typical Switching Characteristics VCC (V) 12 RL () 4 IC (A) 3 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 30 4.2 2.8 3.3 C0.5 16.9 Test Conditions VCB = 120V VEB = 6V IC = 50mA VCE = 4V, IC = 3A IC = 4A, IB = 0.4A 2.6 IB2 (mA) -30 t on (s) 1.0 t stg (s) 2.0 tf (s) 0.5 1.35 1.35 0.85 2.54 (13.5) Symbol 4 Electrical Characteristics Unit V V V A A W C C 8.4 Ratings 120 100 6 8 (pulse 12) 3 35 (Tc=25C) 150 -55 to +150 3.9 Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 0.8 Absolute Maximum Ratings (Ta=25C) 0.45 2.54 2.2 a) Part No. b) Lot No. B C E (Unit: mm) IC -- VCE Characteristics (typ.) 300m A 20 0m A 8 0m A 15 VCE (sat) -- IB Characteristics (typ.) IC -- VBE Temperature Characteristics (typ.) 8 2 A A 0m 75m 10 0mA 5 25mA 4 Ic = 3A 0 1 2 3 0 4 5 10 50 100 0 500 1000 2000 0.5 j-a -- t (VCE = 4V) 500 50 (C/W) 75C 25C -55C 100 1 5 8 10 5 NO 30 0.01 0.05 0.1 0.5 IC (A) 1 5 8 0.1 0.05 0.0002 0.001 0.01 0.1 se c c fin 20 * 10 2 nk 100 si 10 20 0* at 0.5 he 20 0* ite PC (W) in =2 5 C) ith c W se 1 (T c 30 se D. C 0m IC (A) 100 natural air cooling Silicone grease Aluminum heatsink Unit: mm 1m 10 m 10 5 20 fT (MHz) 10 40 10 10 1 PC -- Ta Derating 20 Typ Ta = 25C t (sec) Safe Operating Area (single pulse) (VCE = 12V) 30 =2 1 0.5 IC (A) f T -- IE Characteristics (typ.) FIN (Ta Single Pulese 50 0.5 Characteristics C) 5 j-a hFE 100 1.5 50 Tc = 125C Typ 1.0 VBE (V) hFE -- IC Temperature Characteristics (typ.) (VCE = 4V) 500 hFE 0 IB (mA) hFE -- IC Characteristics (typ.) 0.05 0.1 Tc = -55C 25C 75C 125C 2 Ic = 1A VCE (V) 30 0.01 4 Ic = 5A IB = 10mA 2 0 1 IC (A) 6 VCE (sat) (V) IC (A) 6 0*2 Without heatsink 0 -0.01 0.1 -0.05 -0.1 -0.5 -1 IE (A) -5 -10 3 5 10 50 VCE (V) 100 200 0 0 50 100 150 Ta (C) 77 Power Transistor FP812 ICBO IEBO VCEO hFE VCE (sat) (Ta=25C) Unit A A V Ratings 10max 10max -120min 70min -0.3max External Dimensions TO220F (full-mold) 10.0 V a b Typical Switching Characteristics VCC (V) -12 RL () 4 IC (A) -3 VBB1 (V) -10 VBB2 (V) 5 IB1 (mA) -30 4.2 2.8 3.3 C0.5 16.9 Test Conditions VCB = -120V VEB = -6V IC = -50mA VCE = -4V, IC = -3A IC = -3A, IB = -0.3A 2.6 IB2 (mA) 30 t on (s) 2.5 t stg (s) 0.4 tf (s) 0.6 1.35 1.35 0.85 2.54 (13.5) Symbol 4 Electrical Characteristics Unit V V V A A W C C 8.4 Ratings -120 -120 -6 -8 (pulse -12) -3 35 (Tc=25C) 150 -55 to +150 3.9 Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 0.8 Absolute Maximum Ratings (Ta=25C) 0.45 2.54 2.2 a) Part No. b) Lot No. B C E (Unit: mm) IC -- VCE Characteristics (typ.) -8 -3 0 0m A A 0m 0 -2 -1 IC -- VBE Temperature Characteristics (typ.) -2 -100mA A m 50 VCE (sat) -- I B Characteristics (typ.) -75mA -6 -6 VCE (sat) (A) IC (A) -4 -25mA -2 -1 Ic = -1A IB = -10mA 0 -1 -2 -3 IC (A) Ic = -5A -50mA 0 0 -5 -4 -10 Tc = -40C 25C 75C 125C -50 -100 0 -500 -1000 -2000 0 -0.5 IB (mA) hFE -- IC Characteristics (typ.) 500 j-a -- t (VCE = -4V) 500 (C/W) 75C 25C 100 j-a hFE 100 -55C 50 30 -0.01 30 -0.01 -5 -8 Characteristics 10 5 NO -0.05 -0.1 -0.5 IC (A) -1 -5 -8 0.1 0.05 0.0002 0.001 0.01 0.1 -12 -10 30 fin ) in 5 C 20 natural air cooling Without heatsink * 10 0* 2 nk 100 si 10 20 at 0* -0.5 he 20 ite -1 ith =2 W IC (A) c (T c fT (MHz) 100 natural air cooling Silicone grease Aluminum heatsink Unit: mm c se c m se 0m 10 C se 1m 10 D. 20 10 10 40 -5 Typ 1 PC -- Ta Derating PC (W) 30 Tc = 25C t (sec) Safe Operating Area (single pulse) (VCE = 12V) ) C 25 1 0.5 IC (A) f T -- IE Characteristics (typ.) Fin = (Ta Single Pulese 50 -0.5 -1 -1.5 50 Tc = 125C Typ -1.0 VBE (V) hFE -- IC Temperature Characteristics (typ.) (VCE = -4V) -0.05 -0.1 -4 -2 VCE (V) hFE (VBE = -4V) -8 Ic = -3A 0*2 Without heatsink 0 0.01 0.05 0.1 0.5 IE (A) 78 1 5 10 -0.1 -3 -5 -10 -50 VCE (V) -100 -150 0 0 50 100 Ta (C) 150 Power Transistor MN611S C C ICBO IEBO VCEO hFE VCE (sat) VFEC ES/B VCB=105V VEB=6V IC=50mA VCE=1V, IC=1A IC=1.2A, IB=12mA I FEC=6A L=10mA min 105 400 45 max 115 800 0.08 1.25 10 10 125 1500 0.12 1.5 Unit A A V V V mJ 4.440.2 10.20.3 (1.4) Test Conditions External Dimensions TO220S +0.3 Symbol (Ta=25C) Ratings typ 10.0 -0.5 W Electrical Characteristics 1.30.2 a 1.6 b +0.2 (1.5) Tj Tstg Unit V V V A A 8.60.3 PC Ratings 11510 11510 6 6 (pulse 10) 1 50 (Tc=25C) 1.2 (Ta=25C, No Fin) 150 -55 to +150 0.1 -0.1 1.270.2 +0.3 Symbol VCBO VCEO VEBO IC IB 3.0 -0.5 Absolute Maximum Ratings (Ta=25C) +0.2 0.86 -0.1 0.40.1 1.20.2 2.540.5 2.540.5 a) Part No. b) Lot No. (Unit: mm) 79 Power Transistor MN638S Test Conditions VCB=330V VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA External Dimensions TO220S 4.440.2 10.20.3 1.30.2 V a +0.3 ICBO IEBO V(BR) CEO hFE VCE (sat) (Ta=25C) Unit A mA V Ratings 10max 20max 330 to 430 1500min 1.5max 1.6 b +0.2 (1.5) Symbol (1.4) Electrical Characteristics Unit V V V A A W C C 10.0 -0.5 Ratings 38050 38050 6 6 (pulse 10) 1 60 (Tc=25C) 150 -55 to +150 0.1-0.1 1.270.2 3.0 -0.5 +0.3 Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 8.60.3 Absolute Maximum Ratings (Ta=25C) +0.2 0.40.1 0.86 -0.1 1.20.2 2.540.5 2.540.5 a) Part No. b) Lot No. (Unit: mm) A 20m A 90m 0mA 6 A 18m 4mA 2 4 0 6 0.2 0.5 1 5 VCE (V) (VCE = 2V) 10000 5000 Typ hFE hFE 5C 12 100 50 0.5 IC (A) 80 1000 500 25 C 5C -5 100 50 0.1 1 5 10 20 0.02 0.1 0.5 1.0 IC (A) e te m pe ra tu re ) e) 25 (C a s 1.0 2.0 2.4 VBE (V) hFE -- IC Temperature Characteristics (typ.) (VCE = 2V) 1000 500 10 0.02 0 0 50 100 200 IB (mA) hFE -- IC Characteristics (typ.) 10000 5000 10 ) ur at se (C C C ( Ca 5 12 0 - 3 0 C 1A 5 10 j-c * j-a --t Characteristics 100 j-c * j-a (C/W) 0 ure er mp pe te 3A 1 5 rat IC = 7A 5A as IB=1mA e 5 2 tem IC (A) 2mA IC (A) 150mA 120mA (VBE =4V) 10 3 VCE (sat) (V) 10 IC -- VBE Temperature Characteristics (typ.) VCE (sat) -- I B Characteristics (typ.) IC -- VCE Characteristics (typ.) j-a 10 j-c 1 0.1 0.001 0.01 0.1 t (s) 1 10 Power Transistor Array STA315A VFEC RB RBE Es/b * PW 1ms, Duty 25% L = 10mH, single pulse External Dimensions STA3 (LF400A) 20.20.2 V V V k mJ b a 0.50.15 7*2.54=17.780.25 C1.50.5 Typical Switching Characteristics VCC (V) 12 IC -- VCE Characteristics (typ.) 30m A 3 RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 5 IB2 (mA) 0 ton (s) 1.0 VCE (sat) -- IB Temperature Characteristics 2 B 4 B 5 C 6 B 7 C 8 E (Unit: mm) VCE (sat) -- IC Temperature Characteristics 3 IC/IB = 100 8mA 12 3 C a) Part No. b) Lot No. (IC = 0.5A) 0.5 A m 1 E tf (s) 2.5 tstg (s) 8.5 (2.54) 1.00.25 4.00.2 VCE (sat) (Ta=25C) Unit A mA V 9.00.2 ICBO IEBO VCEO hFE Ratings 10max 2.7max 31 to 41 400min 0.2max 0.5max 2.5max 800120 2.00.4 50min 1.20.2 Tj Tstg Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.7A IC = 0.5A, IB = 5mA IC = 1A, IB = 5mA IFEC = 2A 0.50.15 PT Symbol Unit V V V A mA W W C C 2.30.2 Ratings 355 365 6 2 (pulse 3*) 30 3 (Ta=25C) 13.5 (Tc=25C) 150 -55 to +150 11.30.2 Symbol VCBO VCEO VEBO IC IB 4.70.5 Electrical Characteristics Absolute Maximum Ratings (Ta=25C) 5mA IC (A) 3mA 2mA 1 IB = 1mA 2 3 4 5 1 6 10 500 Ta = 125C 75C 25C -40C 1 VCC = 12V IB = 5mA -IB = 0A tstg tf ton 1 0.5 4 j-a -- t 10 5 1 0 0.5 1.0 1.5 2.0 1 10 1m 100 1000 t (ms) PT -- Ta Derating (per element) 5 Characteristics Ic (A) Safe Operating Area (single pulse) 1 Single pulse 5 IC (A) 5 0.5 20 10 0.1 0.5 50 ton * tstg * tf (S) 1000 0.1 0 IC (A) ton* tstg *t f -- IC Characteristics (typ.) (VCE = 4V) 3000 50 0.01 0 400 IB (mA) hFE -- IC Temperature Characteristics 100 100 (C/W) 1 VCE (V) hFE 1 0 0 Ta = 125C 75C 25C -40C j-a 0 Ta = 125C 75C 25C -40C 0.25 2 VCE (sat) (V) VCE (sat) (V) 2 Equivalent Circuit Diagram 20 s 10 m s PT (W) IC (A) 3 1 0.5 W ith 10 inf ini te he at sin k 2 RB 5 4 7 6 RBE 1 Without heatsink natural air cooling Withou 0.1 1 5 10 VCE (V) 50 0 0 t heat 8 sink 50 100 150 Ta (C) 81 Power Transistor Array STA335A ICBO IEBO VCEO hFE VCE (sat) Es/b (Ta=25C) Unit A A V Ratings 10max 10max 355 500min 0.5max 150min External Dimensions STA3 (LF400A) 20.20.2 V mJ b 9.00.2 Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.5A IC = 1A, IB = 5mA L = 10mH, single pulse a 0.50.15 Typical Switching Characteristics RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 5 7*2.54=17.780.25 IB2 (mA) 5 ton (s) 1.3 tstg (s) 4.7 tf (s) 1.2 C1.50.5 1 2 C 3 B 4 E 5 E 6 B 7 C 4.00.2 VCC (V) 12 (2.54) 1.00.25 1.20.2 Tj Tstg Symbol 0.50.15 PT Electrical Characteristics Unit V V V A A W W C C 2.30.2 Ratings 355 355 6 3 1 2.5 (Ta=25C) 12 (Tc=25C) 150 -55 to +150 11.30.2 Symbol VCBO VCEO VEBO IC IB 4.70.5 Absolute Maximum Ratings (Ta=25C) 8 a) Part No. b) Lot No. (Unit: mm) A 15m VCE (sat) -- IB Temperature Characteristics VCE = 4V 4mA 3 2mA IB =1mA 1 2 Ta = 125C 75C 25C -55C 0 0.002 3 0.01 0.05 0.1 VCE (V) 20 500 Ta = 125C 75C 25C -55C tstg 0.5 1 3 tf 1 1m 0.1 0.5 1 5 0.1 0.1 1 10 100 1000 t (ms) Equivalent Circuit Diagram W ith in fin ite 10 (T 25 C ) 2 he at nk (A ll ci rc ui ts op er 0.5 Withou t heat sink (A ll 50 0 3 at 5 0.2 7 si PT (W) 0m IC (A) 1 s 10 10 Single pulse 5 15 s VCE (V) Characteristics ton 0.3 0.05 m 5 1.5 0.5 PT -- Ta Derating 10 2 j-a -- t Ic (A) 5 1.0 10 5 (per element) c= VCE = 12V IB1 = - IB2 = 5mA 10 0.5 Safe Operating Area (single pulse) 1 0.5 20 IC (A) DC 0 VBE (V) (C/W) ton * tstg * tf (S) hFE 1000 10 0 0.4 ton* tstg* t f -- IC Characteristics (typ.) (VCE = 4V) 5000 0.05 0.1 Ta = -55C 25C 75C 125C IB (A) hFE -- IC Temperature Characteristics (typ.) 100 0.01 2 1 j-a 0 0.5 IC (A) IC (A) VCE (sat) (V) 3mA 1 82 4 5mA 2 0 IC -- VBE Temperature Characteristics (typ.) (IC = 1A) 1 A 6m A 8m 10 3 m A IC -- VCE Characteristics (typ.) 0 e) circuits operat e) 50 100 Ta (C) 6 4 150 5 5000 Power Transistor Array STA415A L = 10mH, single pulse 0.2 b 9.0 0.2 0.2 V V V k mJ a 1.0 0.25 IC -- VCE Characteristics (typ.) 30m A 3 RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 5 IB2 (mA) 0 ton (s) 1.0 9 * 2.54=22.86 C1.5 tstg (s) 8.5 0.3 0 0.3 0.05 0.5 tf (s) 2.5 a) Part No. b) Lot No. (Unit: mm) VCE (sat) -- IC Temperature Characteristics (IC = 0.5A) 0.5 3 IC /IB = 100 8mA 12 (2.54) 0.15 1 2 3 4 5 6 7 8 9 10 E B C B C B C B C E VCE (sat) -- IB Temperature Characteristics A m 0.5 0 Typical Switching Characteristics VCC (V) 12 0.2 0.2 25% 25.25 0.2 VFEC RB RBE Es/b External Dimensions STA4 (LF412) 4.0 VCE (sat) (Ta=25C) Unit A mA V 2.3 ICBO IEBO VCEO hFE Ratings 10max 2.7max 31 to 41 400min 0.2max 0.5max 2.5max 800120 2.00.4 50min 0.15 * PW 1ms, Duty Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.7A IC = 0.5A, IB = 5mA IC = 1A, IB = 5mA IFEC = 2A 1.2 Tj Tstg Symbol 0.5 PT Unit V V V A mA W W C C 11.3 Ratings 355 365 6 2 (pulse 3*) 30 4 (Ta = 25C) 18 (Tc = 25C) 150 -55 to +150 0.5 Symbol VCBO VCEO VEBO IC IB 3.5 Electrical Characteristics Absolute Maximum Ratings (Ta=25C) 5mA IC (A) 3mA 2mA 1 IB = 1mA 2 3 4 5 1 6 10 500 Ta = 125C 75C 25C -40C 1 VCC = 12V IB = 5mA -IB = 0A tstg 1 j-a -- t Characteristics Single pulse tf ton 1 0.5 4 5 1 0 0.5 1.0 1.5 2.0 1 10 100 Ic (A) Safe Operating Area (single pulse) 1m 1000 t (ms) PT -- Ta Derating (per element) 5 10 5 IC (A) 5 0.5 20 10 0.1 0.5 50 ton * tstg* tf (S) 1000 0.1 0 IC (A) ton*tstg*tf -- IC Characteristics (typ.) (VCE = 4V) 3000 50 0.01 0 400 IB (mA) hFE -- IC Temperature Characteristics 100 100 (C/W) 1 VCE (V) hFE 1 0 0 Ta = 125C 75C 25C -40C j-a 0 Ta = 125C 75C 25C -40C 0.25 2 VCE (sat) (V) VCE (sat) (V) 2 Equivalent Circuit Diagram 20 s 10 m s W 3 in 7 9 he 10 at si nk PT (W) 5 ite 0.5 fin IC (A) ith 1 2 RB 4 6 8 RBE 1 Without heatsink natural air cooling With 0.1 1 5 10 VCE (V) 50 0 0 out h eatsin 50 10 k 100 150 Ta (C) 83 Power Transistor Array STA461C External Dimensions STA4 (LF400B) V V mJ 0.2 a 9* 2.54=22.86 IC (A) 1 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 30 IB2 (mA) -30 ton (s) 0.2 t stg (s) 3.9 C1.5 tf (s) 0.2 0.05 0.15 RL () 12 (2.54) 0.15 0.5 1 2 3 4 B C E 5 6 0.2 0.5 0.2 0.25 4.0 1.0 Typical Switching Characteristics VCC (V) 12 0.2 b 9.0 0.2 25.25 0.2 (Ta=25C) Unit A A V 2.3 ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b Ratings 10max 10max 60 to 70 400 to 1500 0.15max 1.5max 80min 1.2 Tj Tstg Test Conditions VCB = 60V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse 0.5 PT Symbol Unit V V V A A W W C C 11.3 Ratings 655 655 6 6 (pulse 10) 1 3.2 (Ta = 25C) 18 (Tc = 25C) 150 -55 to +150 0.5 Symbol VCBO VCEO VEBO IC IB 4.7 Electrical Characteristics Absolute Maximum Ratings (Ta=25C) 7 8 9 10 B C E a) Part No. b) Lot No. (Unit: mm) IC -- VCE Characteristics (typ.) 7 (VCE = 1V) 6 0.75 30mA IC / IB = 100 20mA 6 IC -- VBE Temperature Characteristics (typ.) VCE (sat) -- IC Temperature Characteristics (typ.) 5 5 5mA 3 Ta = -55C 25C 75C 125C 3mA 0.25 2 0 1 2 3 4 0 0 0.01 5 0.1 1 5 Ta = 125C 75C 25C -55C 1 VCC = 12V IB1 = - IB2 = 30mA 1 0.5 Single pulse 1 0.5 tf 0 10 0.1 ton 1 2 3 0.05 0.1 1 Ic (A) IC (A) Safe Operating Area (single pulse) 1.5 Characteristics 5 0.1 0.1 j-a -- t (C/W) ton*tstg*tf (S) hFE 500 1.0 10 tstg 1000 50 0.01 0.5 VBE (V) ton* tstg * t f -- IC Characteristics (VCE = 1V) 2000 10 100 t (ms) PT -- Ta Derating 20 Equivalent Circuit Diagram 20 0.5m 10 s PT (W) 8 nk si at he 0.5 3 ite fin in 1 ith W 15 s 1m s 10m 5 IC (A) 0 10 IC (A) hFE -- IC Temperature Characteristics (typ.) 10 2 7 5 Withou t heat sink Without heatsink natural air cooling 0.1 1 5 10 VCE (V) 84 2 1 VCE (V) 100 Ta = 125C 75C 25C -55C 3 IB = 1mA 1 0 4 0.5 j-a IC (A) 4 IC (A) VCE (sat) (V) 10mA 50 100 0 0 50 4 100 Ta (C) 150 9 2000 Power Transistor Array STA463C External Dimensions STA4 (LF400B) 25.25 V V mJ 0.2 a 9*2.54=22.86 IC (A) 1 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 30 IB2 (mA) -30 t on (s) 0.2 t stg (s) 5.7 C1.5 tf (s) 0.4 0.05 0.15 RL () 12 (2.54) 0.15 0.5 1 2 3 4 B C E 5 6 0.2 0.5 0.2 0.25 4.0 1.0 Typical Switching Characteristics VCC (V) 12 0.2 b 9.0 0.2 (Ta=25C) Unit A A V 0.2 ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b Ratings 10max 10max 105 to 125 400 to 1500 0.12max 1.5max 45min 2.3 Test Conditions VCB = 105V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.2A, IB = 12mA IFEC = 6A L = 10mH, single pulse 1.2 Tj Tstg Symbol 0.5 PT Electrical Characteristics Unit V V V A A W W C C 11.3 Ratings 11510 11510 6 6 (pulse 10) 1 3.2 (Ta=250C) 18 (Tc=25C) 150 -55 to +150 0.5 Symbol VCBO VCEO VEBO IC IB 4.7 Absolute Maximum Ratings (Ta=25C) 7 8 9 10 B C E a) Part No. b) Lot No. (Unit: mm) IC -- VCE Characteristics (typ.) VCE (sat) -- IC Temperature Characteristics (typ.) 20mA 6 10mA 5mA 4 3 3mA Ta = -55C 25C 75C 150C 0.25 4 3 2 2 1 IB = 1mA 1 0 1 2 3 4 5 0 0 0.01 6 0.1 (VCE = 4V) 2000 5 tstg 1 0.5 1.0 ton 0 10 1 2 Characteristics VCE (sat) -- IB Temperature Characteristics (typ.) 3 Single transistor operated 10 5 1 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t (s) PT -- Ta Derating (Tc = 25C) 20 0.75 Dual transistor operated Single pulse Ic (A) IC (A) 1.5 0.5 VCC = 12V IB1 = - IB2 = 30mA tf 0.1 1 j-a -- t 100 50 (C/W) Ta = 150C 75C 25C -55C j-a ton*tstg*tf (S) 500 hFE 0.5 VBE (V) 10 1000 0.1 0 5 ton* tstg * t f -- IC Characteristics hFE -- IC Temperature Characteristics (typ.) 50 30 0.01 1 IC (A) VCE (V) 100 Ta = 150C 75C 25C -55C 5 0.5 IC (A) 30mA 6 VCE (sat) (V) 7 0 (VCE = 1V) 7 I C /IB = 100 5 IC (A) IC -- VBE Temperature Characteristics (typ.) 0.75 8 Equivalent Circuit Diagram 15 PT (W) nk si at he 0.25 8 ite fin in 0.5 Ta = 150C 75C 25C -55C 3 ith W VCE (sat) (V) IC = 1.2A 10 2 7 5 Withou t heat sink 0 1 10 100 IB (mA) 1000 0 0 50 4 100 9 150 Ta (C) 85 Power Transistor Array STA464C b 0.2 0.2 0.2 a V V mJ 1.0 0.25 0.5 (2.54) 0.15 0.05 C1.5 0.5 0.2 9 *2.54= (22.86) (Root dimension) 0.2 80 65 800 0.09 1.25 25.25 A A V 9.0 60 400 10 10 70 1500 0.15 1.5 Unit 0.2 VCB=60V VEB=6V IC=50mA VCE=1V, IC=1A IC=1.5A, IB=15mA IFEC=6A L=10mH max 2.3 ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b min 11.3 Test Conditions External Dimensions STA4 4.0 C C Symbol (Ta=25C) Ratings typ 0.15 W Electrical Characteristics 1.2 Tj Tstg Unit V V V A A 0.5 PC Ratings 655 655 6 6 (pulse 10) 1 20 (Tc=25C) 4 (Ta=25C) 150 -55 to +150 0.5 Symbol VCBO VCEO VEBO IC IB 3.5 Absolute Maximum Ratings (Ta=25C) 1 2 3 4 5 6 7 8 9 10 E B C B C B C B C E a) Part No. b) Lot No. (Unit: mm) Equivalent Circuit Diagram 3 5 7 9 2 4 1 86 6 8 10 Power Transistor Array SLA8004 PT Tj Tstg V V V A A W W C C ICBO IEBO VCEO hFE VCE (sat) VFEC Test Conditions Ratings Test Conditions VCB = 60V 100max VEB = 6V 60max IC = 25mA 60min VCE = 1V, IC = 3A 150min IC = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max Unit Ratings 310.2 A mA V VCB = -55V -100max VEB = -6V -60max IC = -25mA -55min VCE = -1V, I C = -3A 80min I C = -6A, IB = -0.3A -0.35max IFEC = 10A 2.5max 3.20.15 *3.8 24.40.2 4.80.2 1.70.1 16.40.2 3.20.15 V V a 1.20.15 b 5 Symbol External Dimensions SLA (LF817) 2.450.2 (Root dimension) 4 - (R1) R-end +0.2 +0.2 (3) VCBO VCEO VEBO IC IB Unit PNP 160.2 NPN PNP 60 -55 60 -55 6 -6 12 -12 -3 3 5 (Tc=25C, No Fin) 40 (Tc=25C) 150 -55 to +150 (Ta=25C) NPN 0.5 Symbol Electrical Characteristics 12.90.2 Ratings 9.90.2 Absolute Maximum Ratings (Ta=25C) 0.85 -0.1 1.450.15 0.55 -0.1 40.7 11* P2.540.1= (27.94) (Root dimension) 31.30.2 IC -- VCE Characteristics (typ.) IC -- VCE Characteristics (typ.) (PNP) -12 A 0m -100mA 10 A 1 2 3 4 5 6 7 8 9 10 11 12 IC (A) -6 -40mA -4 (Unit: mm) 40mA 6 -10mA -1 0 -2 -3 -4 -5 20mA 4 -20mA -2 IB = 10mA 2 0 -6 2 0 4 hFE -- IC Characteristics (typ.) hFE -- IC Characteristics (typ.) (VCE = -1V) (PNP) 300 6 VCE (V) VCE (V) (VCE = 1V) (N PN ) 400 Typ Typ 100 hFE hFE 100 10 50 10 2 -0.02 -0.1 -1 5 3 0.02 -10 -12 IC (A) hFE -- IC Temperature Characteristics (typ.) 125C 0.1 10 12 hFE -- IC Temperature Characteristics (typ.) (VCE = 1V) (N PN ) 400 C 125 25C -30C 100 1 IC (A) (VCE = -1V) (PNP) 300 C 25 C 0 -3 hFE hFE 100 10 50 10 2 -0.02 -0.1 -1 5 3 0.02 -10 -12 IC (A) VCE (sat) -- IB Characteristics (typ.) 0.1 1 10 12 IC (A) VCE (sat) -- IB Characteristics (typ.) (PNP) -1.4 (N PN ) 1.3 Equivalent Circuit Diagram 4 1.0 -1.0 8 R2 IC = -12A -9A -6A -3A -0.5 VCE (sat) (V) VCE (sat) (V) a) Part No. b) Lot No. 100mA 1 8 -60mA IC (A) m 50 60mA -8 0 20 I -20 B = 0m A -10 (N PN ) 12 A m -150 R1: 500 Typ. R2: 500 Typ. 0.5 -1A 12A IC = 1A 0 -7 -10 -100 IB (mA) -1000 -3000 9 5 0 5 10 3A 100 6A 3 6 7 10 2 12 9A R1 1 1000 11 3000 IB (mA) 87 Surface-mount Power Transistor Array SDA03 External Dimensions SMD-16A V VBB1 (V) -10 VBB2 (V) 5 IB1 (mA) -50 IB2 (mA) 50 t on (s) 0.4 t stg (s) 1.75 9 a b Pin 1 tf (s) 0.22 8 20.0max 0.2 19.56 1.40.2 IC (A) -1 +0.15 0.3 -0.05 4.0max RL () 12 +0.15 0.75 -0.05 16 Typical Switching Characteristics VCC (V) -12 2.540.25 0.890.15 0.25 3.60.2 ICBO IEBO VCEO hFE VCE (sat) (Ta=25C) Unit A A V Ratings -10max -10max -60min 100min -0.4max 6.8max Test Conditions VCB = -60V VEB = -6V IC = -25mA VCE = -4V, IC = -2A IC = -2A, IB = -0.1A 6.30.2 8.00.5 Symbol 1.00.3 Electrical Characteristics Unit V V V A A W C C 0 to 0.15 Ratings -60 -60 -6 -6 (pulse -12) -1 3 (No Fin) 150 -55 to +150 9.80.3 Symbol VCBO VCEO VEBO IC IB PT Tj Tstg 3.00.2 Absolute Maximum Ratings (Ta=25C) a) Part No. b) Lot No. (Unit: mm) IC -- VCE Characteristics -6 VCE (sat) -- IC Temperature Characteristics (typ.) -100mA -200mA -5 VCE (sat) (V) -20mA -3 -10mA -2 Ta = 150C 75C 25C -55C -2 -4 IC (A) -30mA -4 (VCE = -4V) -6 IC / IB = 20 -50mA -5 IC (A) IC -- VBE Temperature Characteristics (typ.) -3 Ta = 150C 75C 25C -55C -3 -1 -2 IB = -5mA -1 -1 0 0 -1 -2 -3 -4 0 -0.05 -5 -0.1 -1 0 -10 hFE -- IC Temperature Characteristics hFE Ta = 150C 75C 25C -55C 30 -0.01 -0.1 -1 -10 VCC = 12V IB1 = -IB2 = 50mA 0.5 tf j-a -- t Ta = 25C Single pulse Characteristics 10 5 1 tstg 0.1 0.05 -0.5 -0.1 -0.5 IC (A) -1 -5 -10 0.3 0.001 0.01 0.1 PT -- Ta Derating -20 1 t (s) IC (A) Safe Operating Area (single pulse) -1.5 ton 1 j-a (C/W) ton* tstg* tf (sec) VCE = -4V 500 -1.0 50 5 50 -0.5 VBE (V) ton * tstg * t f -- IC Characteristics 1000 100 0 IC (A) VCE (V) Equivalent Circuit Diagram 4 s 1m -10 10 3 m s Without heatsink m PT (W) IC (A) 20 s -1 16 2 15 14 13 12 11 10 9 -0.5 1 natural air cooling Without heatsink -0.1 -3 -5 -10 -50 VCE (V) 88 -100 0 2 0 50 100 Ta (C) 150 4 6 8 2 Surface-mount Power Transistor Array SDA04 External Dimensions SMD-16A VBB1 (V) -10 VBB2 (V) 5 IB1 (mA) -50 +0.15 0.3 -0.05 IB2 (mA) 50 t on (s) 0.4 t stg (s) 1.75 tf (s) 0.22 b Pin 1 8 20.0max 0.2 19.56 1.40.2 IC (A) -1 9 a 6.8max V 4.0max RL () 12 2.540.25 +0.15 0.75 -0.05 16 Typical Switching Characteristics VCC (V) -12 0.890.15 0.25 3.60.2 ICBO IEBO VCEO hFE VCE (sat) (Ta=25C) Unit A A V Ratings -10max -10max -60min 100min -0.4max 6.30.2 8.00.5 Test Conditions VCB = -60V VEB = -6V IC = -25mA VCE = -4V, IC = -2A IC = -2A, IB = -0.1A 1.00.3 Electrical Characteristics Symbol Unit V V V A A W C C 0 to 0.15 Ratings -60 -60 -6 -6 (pulse -12) -1 2.5 (No Fin) 150 -55 to +150 9.80.3 Symbol VCBO VCEO VEBO IC IB PT Tj Tstg 3.00.2 Absolute Maximum Ratings (Ta=25C) a) Part No. b) Lot No. (Unit: mm) IC -- VCE Characteristics -6 VCE (sat) -- IC Temperature Characteristics (typ.) -100mA -200mA -5 VCE (sat) (V) -20mA -3 -10mA -2 Ta = 150C 75C 25C -55C -2 -4 IC (A) -30mA -4 (VCE = -4V) -6 IC / IB = 20 -50mA -5 IC (A) IC -- VBE Temperature Characteristics (typ.) -3 Ta = 150C 75C 25C -55C -3 -1 -2 IB = -5mA -1 -1 0 0 -1 -2 -3 -4 0 -0.05 -5 -0.1 -1 0 -10 hFE -- IC Temperature Characteristics hFE Ta = 150C 75C 25C -55C 30 -0.01 -0.1 -1 -10 VCC = 12V IB1 = - IB2 = 50mA 0.5 tf j-a -- t Ta = 25C Single pulse Characteristics 0.05 -0.5 -0.1 -0.5 -1 -5 10 5 1 tstg 0.1 IC (A) -10 0.3 0.001 0.01 0.1 PT -- Ta Derating -20 1 2 t (s) IC (A) Safe Operating Area (single pulse) -1.5 ton 1 j-a (C/W) ton * tstg * tf (sec) VCE = -4V 500 -1.0 50 5 50 -0.5 VBE (V) ton* tstg* t f -- IC Characteristics 1000 100 0 IC (A) VCE (V) Equivalent Circuit Diagram 4 1m -10 s 10 3 m 20 s Without heatsink s PT (W) IC (A) m -1 16 2 15 10 9 -0.5 1 2 8 natural air cooling Without heatsink -0.1 -3 -5 -10 -50 VCE (V) -100 0 0 50 100 150 Ta (C) 89 Surface-mount Power Transistor Array SDC09 External Dimensions SMD-16A 0.890.15 0.25 2.540.25 +0.15 0.75 -0.05 16 V V mJ 9 a 6.8max ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b (Ta=25C) Unit A A V Ratings 10max 10max 60 to 70 400 to 1500 0.15max 1.5max 80min 6.30.2 8.00.5 Test Conditions VCB = 60V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse 0 to 0.15 Symbol Unit V V V A A W C C 9.80.3 Ratings 655 655 6 6 (pulse 10 *) 1 2.8 150 -55 to +150 3.00.2 Symbol VCBO VCEO VEBO IC IB PT Tj Tstg 1.00.3 Electrical Characteristics Absolute Maximum Ratings (Ta=25C) +0.15 0.3 -0.05 b Pin 1 8 20.0max 19.560.2 1.40.2 3.60.2 4.0max * PW 100s, Duty 1% a) Part No. b) Lot No. (Unit: mm) IC -- VCE Characteristics VCE (sat) -- IC Temperature Characteristics (typ.) 8 IC -- VBE Temperature Characteristics (typ.) (VCE = 4V) 6 0.7 IC /IB =100 0.6 20mA 0.5 IC (A) 5 10mA 4 5mA 3 3mA 1mA 1 0 1 2 3 0.3 3 2 1 0.1 4 0 0.0001 5 Ta=150C 100C 75C 25C -55C 4 Ta=150C 100C 75C 25C -55C 0.4 0.2 2 0 5 IC (A) IB = 30mA 6 VCE (sat) (V) 7 0.001 0.01 0 0.1 0 0.2 0.4 IC (A) VCE (V) hFE -- IC Temperature Characteristics ton* tstg* t f -- IC Characteristics 5000 0.6 0.8 1.0 1.2 VBE (V) j-a -- t Use substrate 42*31*1m Single pulse Characteristics 10 10 ton * tstg * tf (sec) VCE=1V Ta=150C 100C 75C 25C -55C 100 50 0.01 0.1 1 10 tstg VCC =12V IB1= -IB2 =30mA 1 ton tf 0 0.5 1.0 1.5 2.0 2.5 3.0 0.05 0.1 0.5 ms 5 Equivalent Circuit Diagram 50* 50 * 1.6mm Use substrate 1 PT (W) 1ms 1 100 6 10 5 10 t (ms) PT -- Ta Derating Ta=25C 0.5 1 IC (A) Safe Operating Area (single pulse) IC (A) 1 0.1 0.1 IC (A) 20 j-a (C/W) hFE 1000 3 3 4 13 15 16 5 6 8 42*31*1.0mm Use substrate 2 14 10ms 11 1 0.1 0.05 0.5 2 1 5 10 VCE (V) 90 50 100 0 -50 0 50 Ta (C) 100 150 7 9 10 12 1000 Surface-mount Power Transistor Array SPF0001 Tj Tstg Electrical Characteristics Symbol Test Conditions ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b VCB=105V VEB=6V IC=50mA VCE=1V, IC=1A IC=1.2A, IB=12mA I FEC=6A L=10mH (Ta=25C) min 105 400 45 Ratings typ 115 800 0.08 1.25 max 10 10 125 1500 0.12 1.5 External Dimensions SMD-16A Unit 14.740.2 A A V 13.040.2 +0.1 20 1.0 -0.05 Fin thickness 11 a V V mJ 10.50.3 (Ta=25C) Unit V V V A A W C C 7.50.2 Ratings 11510 11510 6 6 (pulse 10) 1 2.5 (Ta=25C) 150 -55 to +150 b 20.2 Symbol VCBO VCEO VEBO IC IB PT * 10 1 +0.15 1.270.25 0.4 -0.05 +0.15 0.25 -0.05 2.50.2 * Use glass epoxy substrate (FR4) 70mm *100mm*1.6mm (11.43) 4-( 0.8) 10 (3.05) 1 F1 20 F2 (2.4) (4.7) Absolute Maximum Ratings a) Part No. b) Lot No. 11 (13.54) (Unit: mm) Equivalent Circuit Diagram F1 3 F2 8 18,19 12,13 91 MOS FET 2SK2701 Electrical Characteristics Symbol Test Conditions V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD ID = 100A, VGS = 0V VGS = 30V VDS = 450V, VGS = 0V VDS = 10V, ID = 1mA VDS = 20V, ID = 3.5A VDS = 10V, ID = 3.5A min Unit max 450 2.0 3.5 100 100 4.0 3.0 5 0.84 720 150 65 25 40 70 50 1.0 VDS = 10V f = 1.0MHz VGS = 0V ID = 3.5A VDD = 200V RL = 57 VGS = 10V ISD = 7A, VGS = 0V 1.10 1.5 4.20.2 10.00.2 3.30.2 V nA A V S pF pF pF ns ns ns ns V C 0.5 2.8 a b 1.350.15 1.350.15 3.9 35 (Tc=25C) 130 7 150 -55 to +150 *1 PW 100s, duty 1% *2 VDD = 30V, L = 5mH, IL = 7A, unclamped, RG = 50 External Dimensions FM20 (full-mold) (Ta=25C) Ratings typ 16.90.3 8.40.2 0.8 4.00.2 Unit V V A A W mJ A C C 0.2 Ratings 450 30 7 28 0.2 Symbol VDSS VGSS ID ID (pulse)*1 PT EAS *2 IAS Tch Tstg 13.0 min Absolute Maximum Ratings (Ta=25C) +0.2 0.85 -0.1 +0.2 2.54 2.54 2.40.2 0.45 -0.1 2.20.2 a) Part No. b) Lot No. G D S (Unit: mm) 6 Drain current ID (A) 5V 4 3 2 VGS = 4.5V 5 4 3 2 TC = -55C 25C 125C 1 0 10 5 Drain-source voltage 0 20 15 4 6 Drain-source voltage VDS (V) 1 0.5 0.2 0 0.5 ID = 7A 4 ID = 3.5A 2 5 10 Gate-source voltage 1.5 1.0 0.5 VDS (V) 50 Drain current ID (A) 1 0 0 R DS N) (O LI M IT 10 ED DC 10 m 1s ER 1 s s s( OP 0 1m ho t) AT IO N 0.5 0.1 0.2 0.4 0.6 Source-drain voltage 0.8 VSD (V) 1.0 0.05 3 5 10 50 100 Drain-source voltage VDS (V) 500 30 20 nk Drain-source voltage 40 5V, 10V 5 si 30 VGS = 0V 40 ID (pulse) max at he 20 4 PD -- Ta Derating (Tc=25C) 10 ID max 150 100 Tc (C) ite 20 10 Safe Operating Area (single pulse) 5 50 fin Crss 0 Case temperature 6 2 -50 in Coss 50 0 ith 100 7 ID = 3.5A VGS = 10V 20 50 3 6 W Drain reverse current IDR (A) Ciss 500 5 ID (A) 2.0 VGS (V) 7 VGS = 0V f = 1MHz 4 R DS (ON) -- TC Characteristics 6 Capacitance -- VDS Characteristics I DR -- VSD Characteristics 1000 3 Drain current 8 ID (A) 2000 2 1 2.5 4 5 7 1 0 VGS (V) 0 0.2 0.05 0.1 Drain current Capacitance Capacitance (pF) 0.4 10 VDS = 20V 0 0.6 8 VDS -- VGS Characteristics TC = -55C 25C 125C 5 2 Gate-source voltage VDS (V) Re (yfs) -- ID Characteristics 10 0 0.8 DC ON resistance RDS (ON) () Drain current ID (A) 5 1 92 VGS = 10V VDS = 20V 5.5V DC ON resistance RDS (ON) () 10V DC transconductance Re (yfs) (S) 1.0 7 6 0 R DS (ON) -- I D Characteristics ID -- VGS Characteristics 7 Max. power dissipation PD (W) ID -- VDS Characteristics 10 Without heatsink 0 0 50 100 Ambient temperature 150 Ta (C) MOS FET FKV460 (under development) Electrical Characteristics Test Conditions V(BR) DSS ID = 100A, VGS = 0V VGS = +20V VGS = -10V VDS = 40V, VGS = 0V VDS = 10V, ID = 250A VDS = 10V, ID = 25A VGS = 10V, ID = 25A IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD VDS = 10V f = 1.0MHz VGS = 0V min max 40 External Dimensions TO220F (full-mold) Unit 3.30.2 V +10 -5 100 2.3 1.3 20 6 2000 1200 200 ID = 25A VDD 12V RL = 0.48 VGS = 10V To be defined ISD = 50A, VGS = 0V 1.0 9 1.5 A A V S m pF pF pF ns ns ns ns V 4.20.2 10.00.2 2.8 16.90.3 8.40.2 0.8 4.00.2 Symbol (Ta=25C) Ratings typ 0.2 40 (Tc=25C) 150 -55 to +150 100s, duty 1% Unit V V A A W C C C 0.5 a b 1.350.15 1.350.15 3.9 * PW Ratings 40 +20, -10 60 180 0.2 Symbol VDSS VGSS ID ID (pulse)* PD Tch Tstg 13.0 min Absolute Maximum Ratings (Ta=25C) +0.2 0.85 -0.1 2.54 2.54 2.2 +0.2 0.45 -0.1 2.40.2 0.2 G D S a) Part No. b) Lot No. (Unit: mm) 93 MOS FET FKV460S 94 Electrical Characteristics ID = 100A, VGS = 0V VGS = +20V VGS = -10V VDS = 40V, VGS = 0V VDS = 10V, ID = 250A VDS = 10V, ID = 25A VGS = 10V, ID = 25A IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD VDS = 10V f = 1.0MHz VGS = 0V ID = 25A VDD = 12V RL = 0.48 VGS = 10V ISD = 50A, VGS = 0V max 40 Unit 1.3 20.0 7 2800 1400 600 20 600 250 100 1.0 9 1.5 A A V S m pF pF pF ns ns ns ns V 4.440.2 10.20.3 V +10 -5 100 2.3 (1.4) V(BR) DSS min 1.30.2 a +0.3 Test Conditions External Dimensions TO220S 10.0 -0.5 Symbol (Ta=25C) Ratings typ 8.60.3 60 (Tc=25C) 150 -55 to +150 100s, duty 1% Unit V V A A W C C 1.6 b (1.5) * PW Ratings 40 +20, -10 60 180 +0.2 0.1-0.1 1.270.2 +0.3 Symbol VDSS VGSS ID ID (pulse)* PD Tch Tstg 3.0 -0.5 Absolute Maximum Ratings (Ta=25C) +0.2 0.86 -0.1 0.40.1 1.20.2 2.540.5 2.540.5 a) Part No. b) Lot No. (Unit: mm) MOS FET FKV560 Electrical Characteristics V(BR) DSS ID = 100A, VGS = 0V VGS = +20V VGS = -10V VDS = 50V, VGS = 0V VDS = 10V, ID = 250A VDS = 10V, ID = 25A VGS = 10V, ID = 25A IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Di, t rr * PW 100s, duty 1% ID -- VDS Characteristics 9 2700 1100 500 20 600 300 100 1.0 110 VDS = 10V f = 1.0MHz VGS = 0V ID = 25A VDD 12V RL = 0.48 VGS = 10V ISD = 50A, VGS = 0V IF = 25A, di/dt = 100A/s A V S m pF pF pF ns ns ns ns V ns 11 1.5 120 100 4V 80 VGS=3.5V 60 40 2 4 6 8 1 2 3 4 Gate-source voltage 5 1.2 1.0 0.8 0.6 ID=60A 0.4 ID=25A 0.2 0 100 200 ID (A) 5 10 Gate-source voltage Capacitance -- VDS Characteristics I DR -- VSD Characteristics 15 Safe Operating Area 30 40 VDS (V) 50 Drain current ID (A) 100 80 60 40 PD -- Ta Derating 40 ID (pulse) max 10 ED IT IM R DS L N) (O PT=1ms PT=10ms 1 Ta=25C single pulse 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Source-drain voltage VSD (V) 150 100 Tc (C) 0.1 0.1 1 10 Drain-source voltage 100 VDS (V) 30 20 k 20 100 120 50 in 10 Drain-source voltage VGS= 0V Ta= 25C 140 0 0 Case temperature s at 0 0 -60 -50 20 he 100 5 ite Crss VGS=10V 10 fin Coss VGS=4V 15 in 1000 200 ID=25A 300 160 100 ID (A) ith Ciss 10 W Drain reverse current IDR (A) Ta= 25C VGS=0V f=1MHz 1 VGS (V) 180 10000 5 R DS (ON) -- TC Characteristics DC ON resistance RDS (ON) (m) Drain-source voltage VDS (V) 10 Drain current VGS=10V Drain current 0 1 VGS=4V 10 0 6 Ta=25C 10 Ta=25C 20 VDS=10V 100 a) Part No. b) Lot No. 15 VGS (V) VDS -- VGS Characteristics -55C 25C 125C 2.40.2 R DS (ON) -- I D Characteristics 1.4 500 +0.2 0.45 -0.1 (Unit: mm) Ta= -55C 25C 150C VDS (V) Re (yfs) -- ID Characteristics 2.54 G D S 1 0.1 0.001 0 10 +0.2 0.85 -0.1 2.20.2 10 0.01 Drain-source voltage 1.350.15 1.350.15 20 20 0 a b 2.54 100 4.5V C 0.5 2.8 A VDS=10V Drain current ID (A) Drain current ID (A) 1.0 20 6V 140 DC transconductance Re (yfs) (S) +10 -5 100 2.5 4.20.2 10.00.2 3.30.2 V DC ON resistance RDS (ON) (m) 10V Capacitance Capacitance (pF) 50 1000 160 5 Unit max ID -- VGS Characteristics 180 0 min 3.9 Test Conditions Max. power dissipation PD (W) 35 (Tc=25C) 150 -55 to +150 Symbol IGSS External Dimensions TO220F (full-mold) (Ta=25C) Ratings typ 16.90.3 8.40.2 0.8 4.00.2 Unit V V A A W C C 0.2 Ratings 50 +20, -10 60 180 0.2 Symbol VDSS VGSS ID ID (pulse)* PD Tch Tstg 13.0 min Absolute Maximum Ratings (Ta=25C) 10 Without heatsink 0 0 50 100 Ambient temperature 150 Ta (C) 95 MOS FET FKV560S 96 ID = 100A, VGS = 0V VGS = +20V VGS = -20V VDS = 50V, VGS = 0V VDS = 10V, ID = 250A VDS = 10V, ID = 25A VGS = 10V, ID = 25A IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD VDS = 10V f = 1.0MHz VGS = 0V max 50 Unit V +10 -5 100 2.0 1.0 20.0 9 2000 1000 150 ID = 25A VDD 12V RL = 0.48 VGS = 10V To be defined ISD = 50A, VGS = 0V 1.0 11 1.5 A A V S m pF pF pF ns ns ns ns V 4.440.2 10.20.3 (1.4) V(BR) DSS min +0.3 Test Conditions External Dimensions TO220S 10.0 -0.5 Symbol (Ta=25C) Ratings typ 1.30.2 a 1.6 b (1.5) Electrical Characteristics 8.60.3 Unit V V A A W C C +0.2 0.1 -0.1 1.270.2 +0.3 Symbol Ratings 50 VDSS VGSS 20 45 ID 135 ID (pulse)* PD 60 (Tc=25C) Tch 150 Tstg -55 to +150 * PW 100s, duty 1% 3.0 -0.5 Absolute Maximum Ratings (Ta=25C) +0.2 0.86 -0.1 0.40.1 1.20.2 2.540.5 2.540.5 a) Part No. b) Lot No. (Unit: mm) MOS FET FKV660 (under development) Electrical Characteristics Test Conditions V(BR) DSS ID = 100A, VGS = 0V VGS = +20V VGS = -20V VDS = 60V, VGS = 0V VDS = 10V, ID = 250A VDS = 10V, ID = 25A VGS = 10V, ID = 25A IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD VDS = 10V f = 1.0MHz VGS = 0V min max 60 External Dimensions FM20 (full-mold) Unit 3.30.2 V +10 -5 100 2.0 1.0 20.0 11 2000 900 100 ID = 25A VDD 12V RL = 0.48 VGS = 10V To be defined ISD = 50A, VGS = 0V 1.0 14 1.5 A A V S m pF pF pF ns ns ns ns V 4.20.2 10.00.2 2.8 16.90.3 8.40.2 0.8 4.00.2 Symbol (Ta=25C) Ratings typ 0.2 40 (Tc=25C) 150 -55 to +150 100s, duty 1% Unit V V A A W C C C 0.5 a b 1.350.15 1.350.15 3.9 * PW Ratings 60 20 50 150 0.2 Symbol VDSS VGSS ID ID (pulse)* PD Tch Tstg 13.0 min Absolute Maximum Ratings (Ta=25C) +0.2 0.85 -0.1 2.54 2.54 2.2 +0.2 0.45 -0.1 2.40.2 0.2 G D S a) Part No. b) Lot No. (Unit: mm) 97 MOS FET FKV660S 98 ID=100A, VGS=0V VGS =+20V VGS =-10V VDS=60V, VGS=0V VDS=10V, ID=250A VDS=10V, ID=25A VGS=10V, ID=25A IGSS IDSS VTH Re (yfs) RDS(ON) Ciss Coss Crss t d(on) tr t d(off) tf VSD VDS=10V f=1.0MHz VGS=0V ID=25A VDD=12V RL=0.48 VGS=10V ISD=50A, VGS=0V max 60 Unit 1.0 20 11 2500 900 150 50 400 400 300 1.0 14 1.5 A A V S m pF pF pF ns ns ns ns V 4.440.2 10.20.3 V +10 -5 100 2.5 1.30.2 (1.4) V(BR)DSS min a +0.3 Test Conditions External Dimensions TO220S 10.0 -0.5 Symbol ( Ta=25C) Ratings typ 1.6 b (1.5) Electrical Characteristics 8.60.3 Unit V V A A W C C 1.270.2 +0.2 0.86 - 0.1 +0.3 Symbol Ratings VDSS 60 VGSS +20, -10 60 ID 180 ID(pulse) PD 60(Tc=25C) Tch 150 Tstg -40 to +150 PW 100s, duty 1% 3.0 -0.5 Absolute Maximum Ratings (Ta=25C) 2.540.5 +0.2 0.1- 0.1 0.40.1 1.20.2 2.540.5 a) Part No. b) Lot No. (Unit : mm) MOS FET Array STA508A ID -- VDS Characteristics VDS = 10V f = 1.0MHz VGS = 0V ID = 4A VDD 12V RL = 3 VGS = 5V RG = 50 ISD = 6A, VGS = 0V 0.2 0.25 1.5 ID -- VGS Characteristics 16 C1.5 1 2 3 4 5 6 7 8 9 10 S G D G D G D G D S a) Part No. b) Lot No. (Unit: mm) 0.25 RDS (ON) () VGS = 4V ID (A) Ta = -55C 25C 75C 150C 4 2 3 4 5 0 6 0.15 VGS = 10V 0.10 0 1.0 2.0 3.0 0 4.0 0 2 4 VGS (V) 8 10 1.0 1.2 I DR -- VSD Characteristics 50 0.45 6 ID (A) Re (yfs) -- I D Characteristics R DS (ON) -- TC Characteristics ID = 4A 0.20 0.05 VDS (V) 0.40 0.3 0.30 4 2 0 0.05 R DS (ON) -- I D Characteristics 6 1 0.3 0.5 VGS = 4.5V 0 (2.54) 0.15 VDS = 10V 8 0 0.5 9 *2.54=22.86 8 12 0.25 0 10 VGS = 10V ID (A) 1.0 0.2 0.15 0.2 400 130 30 100 300 250 200 1.0 0.2 1.0 5.0 b a 4.0 5 100 2.0 0.2 0.15 Ciss Coss Crss t d (on) tr t d (off) tf VSD V A A V S pF pF pF ns ns ns ns V 1.2 RDS (ON) 25.25 120 0.2 ID = 100A, VGS = 0V VGS = 20V VDS = 120V, VGS = 0V VDS = 10V, ID = 250A VDS = 10V, ID = 4.0A VGS = 10V, ID = 4.0A VGS = 4V, ID = 4.0A Unit max 9.0 V(BR) DSS IGSS IDSS VTH Re (yfs) min 0.2 Test Conditions 0.2 Symbol External Dimensions STA4 (LF412) 0.5 4 (Ta = 25C) 20 (Tc = 25C) EAS *2 80 mJ Tch C 150 Tstg C -55 to +150 *1 PW 100s, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 50 PT (Ta=25C) Ratings typ 2.3 Electrical Characteristics (Ta=25C) Unit V V A A W W 11.3 Ratings 120 20 6 10 0.5 Symbol VDSS VGSS ID ID (pulse)*1 3.5 Absolute Maximum Ratings 6 VGS = 0V VGS = 4V 5 VGS = 10V 0.20 Ta = -55C 25C 75C 150C 1 0.5 0.10 0.1 0.05 0.1 0 -50 0 50 100 150 0.5 Tc (C) 1 5 3 2 1 0 10 0 0.2 0.4 ID (A) (Ta = 25C) 20 1000 500 ID (pulse) max 10 Ciss 5 ID (A) Coss 50 1m 10 Equivalent Circuit Diagram 0 s s m RDS (on) LIMITED 100 0.8 10 ID (DC) max VGS = 0V f = 1MHz 0.6 VSD (V) Safe Operating Area (single pulse) Capacitance -- VDS Characteristics Capacitance (pF) Ta = 150C 75C 25C -55C 4 5 IDR (A) Re (yfs) (S) RDS (ON) () 10 0.30 s 10 5 3 7 9 0m s 1 2 0.5 1 4 6 8 10 Crss 0.1 10 0 10 20 30 VDS (V) 40 50 1 5 10 50 100 200 VDS (V) 99 MOS FET Array STA509A ID -- VDS Characteristics ID = 1A VDD 12V RL = 12 VGS = 5V RG1 = 50, RG2 = 10 ISD = 6A, VGS = 0V 1.5 0.25 0.5 (2.54) 0.15 0 9*2.54=22.86 C1.5 0.3 0 0.5 a) Part No. b) Lot No. (Unit: mm) 0.8 VGS = 4V VDS = 10V 10 5 Ta = 150C VGS = 5V VGS = 10V 0.6 RDS (ON) () 4 ID (A) 3 2 0.1 VGS = 3V Ta = -55C 25C 75C 150C 1 0 2 4 6 8 10 12 0.01 14 1 2 4 5 6 1 2 3 4 5 6 I DR -- VSD Characteristics 10 10 ID = 1A VDS = 10V 5 Re (yfs) (S) VGS = 4V typ. 0.4 0.3 VGS = 10V typ. 0.2 8 1 Ta = -55C 25C 150C 0.5 0.1 0.2 0.05 0.1 0 50 100 150 0.5 Ta = 150C 75C 25C -55C 6 4 2 1 0 6 0 0.2 0.4 ID (A) Tc (C) (Tc = 25C) 10 (o n) M LI 1.2 1.4 Equivalent Circuit Diagram ED IT 1m 0 s s m 3 s ID (A) S 1.0 10 R D 0.8 10 ID (pulse) max 5 0.6 VSD (V) Safe Operating Area (single pulse) 5 7 9 1 2 0.5 0.1 0.5 1 1 5 VDS (V) 100 0 ID (A) Re (yfs) -- I D Characteristics 0.5 0 -55C VGS (V) R DS (ON) -- TC Characteristics RDS (ON) () 3 25C 0.4 0 0 VDS (V) -50 75C 0.2 IDR (A) ID (A) 1 0 0.3 0.05 1 2 3 4 5 6 7 8 9 10 S G D G D G D G D S 20 VGS = 4V 0.2 1.0 R DS (ON) -- I D Characteristics ID -- VGS Characteristics 6 b a 0.2 0.25 0.3 0.2 0.2 0.2 0.25 200 120 20 2.0 7.4 3.3 4.2 1.0 V A A V S pF pF pF s s s s V 4.0 1.0 1.0 VDS = 10V f = 1.0MHz VGS = 0V 25.25 57 1.0 100 2.5 0.15 Ciss Coss Crss t d (on) tr t d (off) tf VSD 52 1.2 RDS (ON) 47 9.0 ID = 1mA, VGS = 0V VGS = 20V VDS = 40V, VGS = 0V VDS = 10V, ID = 250A VDS = 10V, ID = 1.0A VGS = 10V, ID = 1.0A VGS = 4V, ID = 1.0A Unit max 0.2 V(BR) DSS IGSS IDSS VTH Re (yfs) min 0.2 Test Conditions External Dimensions STA 0.5 4 (Ta = 25C) 20 (Tc = 25C) EAS *2 40 mJ Tch C 150 Tstg C -55 to +150 *1 PW 100s, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 10 PT Symbol (Ta=25C) Ratings typ 2.3 Electrical Characteristics Unit V V A A W W 11.3 Ratings 525 20 3 6 0.5 Symbol VDSS VGSS ID ID (pulse) *1 3.5 Absolute Maximum Ratings (Ta=25C) 10 50 4 6 8 10 MOS FET Array SMA5113 35 (Tc=25C, All circuits operate, Fin) Unit V V A A W W 130 7 mJ A 4 (Ta=25C, All circuits operate, No Fin) PT EAS *2 IAS j-a 31.2 Junction - Ambientare, Ta=25C, All circuits operate C/W j-c 3.57 Junction - Case, Ta=25C, All circuits operate C/W Electrical Characteristics Symbol Test Conditions V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) ID = 100A, VGS = 0V VGS = 30V VDS = 450V, VGS = 0V VDS = 10V, ID = 1mA VDS = 20V, ID = 3.5A VGS = 10V, ID = 3.5A Ciss Coss Crss t d (on) tr t d (off) tf VSD Tch Tstg C 150 C -55 to +150 *1 PW 100s, duty 1% *2 VDD = 30V, L = 5mH, IL = 7A, unclamped, RG = 50 Unit max 450 V nA A V S pF pF pF ns ns ns ns V 100 100 4.0 2.0 3.5 5.0 0.84 720 150 65 VDS = 10V f = 1.0MHz VGS = 0V ID = 3.5A VDD 200V RL = 57 VGS = 10V RG = 50 1.1 25 40 70 50 1.0 ISD = 7A, VGS = 0V 1.5 ID -- VGS Characteristics 7 5 5 4 4 5V 3 1 1.210.15 1.460.15 +0.2 0.85 -0.1 11* P2.540.1= 27.94 +0.2 1.20.1 0.55 -0.1 31.5 max 1 2 3 4 5 6 7 8 9 10 11 12 a) Part No. b) Lot No. VGS = 10V VDS = 20V 3 15 0 20 1.0 0.5 Ta = -55C 25C 150C 1 10 a RDS (ON) -- ID Characteristics 2 VGS = 4.5V 5 30 b RDS (ON) () 6 ID (A) 6 0 2.50.2 1.5 5.5V 2 4.00.2 31.00.2 7 10V ID (A) min External Dimensions SMA (LF1000) (Unit: mm) ID -- VDS Characteristics 0 (Ta=25C) Ratings typ 10.20.2 Ratings 450 30 7 28 2.4 Symbol VDSS VGSS ID ID (pulse) *1 (10.4) Absolute Maximum Ratings (Ta=25C) 0 2 4 VDS (V) 6 8 0 10 0 1 2 3 VGS (V) RDS (ON) -- TC Characteristics Re (yfs) -- ID Characteristics 2.5 5 6 7 IDR -- VSD Characteristics 100 7 VDS = 20V VGS = 10V ID = 3.5A VGS = 0V 6 50 2.0 4 ID (A) 1.0 IDR (A) Re (yfs) (S) RDS (ON) () 5 1.5 Ta = -55C 25C 150C 10 4 3 2 5 0.5 1 2 0.05 0.1 0 -50 0 50 100 150 0.5 Tc (C) 1 0 0.2 0.4 ID (A) Capacitance -- VDS Characteristics (Ta = 25C) 50 Ciss 0.6 0.8 1.0 VSD (V) Safe Operating Area (single pulse) 1000 Equivalent Circuit Diagram ID (pulse) max 10 500 100 ED 10 ID (DC) max VGS = 0V f = 1MHz 5 ID (A) Capacitance (pF) 0 7 Coss S ) on M LI IT 1m ( 10 RD 0 s s 3 6 7 10 m 10 s 0m s 1 1 4 8 11 0.5 50 2 5 9 12 Crss 0.1 0.05 20 0 10 20 30 VDS (V) 40 50 3 5 10 50 100 500 VDS (V) 101 MOS FET Array SLA5027 j-c VISO Tch Tstg (Fin to lead terminal) AC1000 mJ C/W Vrms C C V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) ID = 100A, VGS = 0V VGS = 20V VDS = 60V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 8A VGS = 4V, ID = 8A Ciss Coss Crss t d (on) tr t d (off) tf VSD 150 -55 to +150 *1 PW 250s, duty 1% *2 VDD = 30V, L = 10mH, unclamped, RG = 50 min Unit max 60 1.0 6.0 1.5 12.0 0.07 1100 500 170 VDS = 10V f = 1.0MHz VGS = 0V ID = 8A VDD 30V RL = 3.75 VGS = 5V RG = 50 0.08 50 250 250 180 1.0 ISD = 10A, VGS = 0V V A A V S pF pF pF ns ns ns ns V 100 100 2.0 1.5 Ellipse 3.20.15 * 3.8 31.00.2 3.20.15 24.40.2 16.4 4.80.2 1.70.1 0.2 Lead plate thickness resins 0.8max 250 2.08 Test Conditions 9.90.2 EAS*2 Symbol External Dimensions SLA (LF800) 8.5max 60 (Tc=25C,4 circuits operate) (Ta=25C) Ratings typ 16.00.2 5 (Ta=25C, 4 circuits operate) PT Unit V V A A W W 13.00.2 Ratings 60 20 12 48 a b 2.7 Symbol VDSS VGSS ID ID (pulse)*1 9.5min (10.4) Electrical Characteristics Absolute Maximum Ratings (Ta=25C) 12 Pin 1 +0.2 -0.1 0.85 1.20.15 0.55 1.450.15 2.20.7 +0.2 -0.1 11*P2.540.7 =27.941.0 31.5 max 1 2 3 4 5 6 7 8 9 10 11 12 a) Part No. b) Lot No. (Unit: mm) ID -- VDS Characteristics ID -- VGS Characteristics 10 R DS (ON) -- I D Characteristics 12 0.1 VDS = 10V 10 VGS = 4V 4V 5V 10V 8 RDS (on) () 8 ID (A) ID (A) 6 VGS = 3V 4 6 Ta = 150C 75C 25C -55C 4 2 0 0.05 VGS = 10V 2 0 1 2 3 4 5 0 6 0 1 2 VDS (V) 3 0 0.1 4 1 VGS (V) Re (yfs) -- I D Characteristics R DS (ON) -- TC Characteristics 20 I DR -- VSD Characteristics 30 0.12 10 ID (A) 20 VDS = 10V VGS = 4V VGS = 0V 10 0.10 VGS = 10V 0.06 0.02 -50 0 50 100 10 IDR (A) Re (yfs) (S) RDS (ON) () 5 5 0.5 2 0.4 150 1 5 Capacitance -- VDS Characteristics ne ED IT =4 IM GS )L dV (o n me DS su R As s VDS (V) 7 10 s ID (A) s 1m 5 1 4 2 50 6 0m 10 3 1 10 Equivalent Circuit Diagram s ID (DC) max Crss 50 1.2 m Coss 10 Capacitance (pF) (Ta = 25C) 10 500 0.8 ID (pulse) max Ciss 5 0.4 5m 0. VGS = 0V f = 1MHz 1 0 VSD (V) V li 50 100 0.1 20 Safe Operating Area (single pulse) 2000 102 10 ID (A) Tc (C) 1000 1 0.5 0.5 1 5 10 VDS (V) 50 100 8 5 11 9 12 Surface-mount MOS FET Array SDK06 RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD ID -- VDS Characteristics 52 1.0 1.0 57 1.0 100 2.5 1.8 0.2 0.25 200 120 20 VDS = 10V f = 1.0MHz VGS = 0V ID = 1A VDD 12V RL = 12 VGS = 5V RG1 = 50, RG2 = 10k 0.25 0.3 2.0 7.4 3.3 4.2 1.0 ISD = 1A, VGS = 0V V A A V S pF pF pF s s s s V 1.5 16 9 a b +0.15 Pin 1 0.3 -0.05 a) Part No. b) Lot No. (Unit: mm) 0.8 VGS = 4V VDS = 10V 10 5 Ta = 150C VGS = 5V VGS = 10V 0.6 3 2 RDS (ON) () ID (A) 1 0.1 VGS = 3V 1 0 2 4 6 8 10 12 0.01 14 1 2 0.2 4 5 6 1 2 3 4 5 6 ID (A) Re (yfs) -- I D Characteristics 0.5 I DR -- VSD Characteristics 10 10 ID = 1A VDS = 10V 5 Re (yfs) (S) VGS = 4V typ. 0.4 0.3 VGS = 10V typ. 0.2 8 1 Ta = -55C 25C 150C 0.5 0.1 0.2 0.05 0.1 0 50 100 150 0.5 1 Ta = 150C 75C 25C -55C 6 4 2 0 6 0 0.2 0.4 ID (A) Tc (C) (Tc = 25C) 10 ED IM S (o 1.0 1.2 1.4 Equivalent Circuit Diagram IT L n) m 10 RD 0.8 10 0 s 1m s ID (pulse) max 5 0.6 VSD (V) Safe Operating Area (single pulse) 15 16 s ID (A) 0 0 VGS (V) R DS (ON) -- TC Characteristics RDS (ON) () 3 25C 0.4 0 0 VDS (V) -50 75C -55C Ta = -55C 25C 75C 150C IDR (A) ID (A) 4 0 8 20.0max 19.560.2 20 VGS = 4V +0.15 0.75 -0.05 R DS (ON) -- I D Characteristics ID -- VGS Characteristics 6 2.540.25 0.890.15 0.25 6.8max 47 1.40.2 ID = 1mA, VGS = 0V VGS = 20V VDS = 40V, VGS = 0V VDS = 10V, ID = 250A VDS = 10V, ID = 1.0A VGS = 10V, ID = 1.0A VGS = 4V, ID = 1.0A Unit max 6.30.2 8.00.5 V(BR) DSS IGSS IDSS VTH Re (yfs) min 1.00.3 Test Conditions External Dimensions SMD-16A 3.60.2 40 150 -55 to +150 *1 PW 100s, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 10 Symbol (Ta=25C) Ratings typ 4.0max 3 (Tc=25C, 4 circuits operate) Electrical Characteristics Unit V V A A W mJ C C 0 to 0.15 Ratings 525 20 3 6 9.80.3 Symbol VDSS VGSS ID ID (pulse) *1 PT EAS *2 Tch Tstg 3.00.2 Absolute Maximum Ratings (Ta=25C) 13 14 11 12 9 10 1 1 3 5 7 0.5 2 0.1 0.5 1 5 10 4 6 8 50 VDS (V) 103 Surface-mount MOS FET Array SDK08 RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD VDS = 10V f = 1.0MHz VGS = 0V ID = 4A VDD 12V RL = 3 VGS = 5V RG = 50 ISD = 6A, VGS = 0V 1.3 5.0 1.8 9.0 0.07 0.09 700 300 90 50 80 60 40 1.0 100 100 2.3 13.0 0.08 0.1 1.5 V nA A V S pF pF pF ns ns ns ns V 2.540.25 0.890.15 0.25 +0.15 0.75 -0.05 16 9 a 6.8max 50 Unit +0.15 0.3 -0.05 b Pin 1 8 20.0max 0.2 19.56 3.60.2 ID = 100A, VGS = 0V VGS = 20V VDS = 50V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 4.0A VGS = 10V, ID = 4.0A VGS = 4V, ID = 4.0A max 1.40.2 V(BR) DSS IGSS IDSS VTH Re (yfs) min 6.30.2 8.00.5 Test Conditions External Dimensions SMD-16A 4.0max Symbol (Ta=25C) Ratings typ 1.00.3 Electrical Characteristics 9.80.3 Ratings 50 20 4.5 9 3.00.2 (Ta=25C) Unit V V A A W 4 (Tc=25C, 4 circuits operate) 80 mJ C 150 C -55 to +150 *1 PW 100s, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 50 Symbol VDSS VGSS ID ID (pulse) *1 PT EAS *2 Tch Tstg 0 to 0.15 Absolute Maximum Ratings a) Part No. b) Lot No. (Unit: mm) Equivalent Circuit Diagram 15 1 13 3 2 104 16 14 11 5 4 12 9 7 6 8 10 Surface-mount MOS FET Array SDK09 (under development) ID -- VDS Characteristics 0.15 0.2 400 130 30 VDS=10V f=1.0MHz VGS=0V ID=4A VDD=12V RL=3 VGS=5V RG=50 100 300 250 200 1.0 ISD=6A, VGS=0V V A A V S 0.2 0.25 ID -- VGS Characteristics 16 b +0.15 0.3 -0.05 Pin 1 0.2 19.56 a) Part No. b) Lot No. (Unit: mm) R DS (ON) -- I D Characteristics 0.25 8 VGS=4.5V RDS (ON) () VGS=4V ID (A) 6 Ta=-55C 25C 75C 150C 4 4 2 0 1 2 3 4 5 0 6 0.15 VGS=10V 0.10 0 1.0 2.0 3.0 0 4.0 0 2 4 VGS (V) 8 10 1.0 1.2 I DR -- VSD Characteristics 50 0.45 6 ID (A) Re (yfs) -- I D Characteristics R DS (ON) -- TC Characteristics ID=4A 0.20 0.05 VDS (V) 0.40 8 20.0max VDS=10V 8 0 9 a 0.30 VGS=10V ID (A) 16 10 12 +0.15 0.75 -0.05 pF pF pF ns ns ns ns V 1.5 2.540.25 0.890.15 0.25 6.8max 1.0 5.0 5 100 2.0 1.40.2 Ciss Coss Crss t d (on) tr t d (off) tf VSD 120 6.30.2 8.00.5 ID=100A, VGS=0V VGS=20V VDS=120V, VGS=0V VDS=10V, ID=250A VDS=10V, ID=4A VGS=10V, ID=4A VGS=4V, ID=4A Unit max 3.60.2 V(BR) DSS IGSS IDSS VTH Re (yfs) min 4.0max Test Conditions External Dimensions SMD-16A 1.00.3 Symbol RDS (ON) *1 PW 100s, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 50 (Ta=25C) Ratings typ 0 to 0.15 Unit V V A A W mJ C C 9.80.3 Symbol Ratings 120 VDSS 20 VGSS 6 ID 10 ID (pulse) *1 3 (Tc=25C, 4 circuits operate) PT EAS *2 80 Tch 150 Tstg -55 to +150 3.00.2 Electrical Characteristics Absolute Maximum Ratings (Ta=25C) 6 VGS=0V VGS=4V 5 VGS=10V 0.20 Ta=-55C 25C 75C 150C 1 0.5 0.10 0.1 0.05 0.1 0 -50 0 50 100 150 0.5 1 5 3 2 1 0 10 0 0.2 0.4 ID (A) Tc (C) (Ta = 25C) 20 1000 500 ID (pulse) max 10 Ciss 5 ID (A) 100 Coss 1m 10 Equivalent Circuit Diagram s 15 m RDS (on) LIMITED 16 13 14 11 12 9 10 s 10 0m s 1 1 50 0.8 10 0 s ID (DC) max VGS =0V f=1MHz 0.6 VSD (V) Safe Operating Area (single pulse) Capacitance -- VDS Characteristics Capacitance (pF) Ta=150C 75C 25C -55C 4 5 IDR (A) Re (yfs) (S) RDS (ON) () 10 0.30 3 5 7 0.5 2 4 6 8 Crss 0.1 10 0 10 20 30 VDS (V) 40 50 1 5 10 50 100 200 VDS (V) 105 Thyristor with built-in reverse diode for HID lamp ignition TFC561D External Dimensions (unit: mm) 4.440.2 (1.4) 1.30.2 11.30.5 8.60.3 10.20.3 +0.3 Repetitive peak off-state voltage: VDRM=600V Repetitive peak surge on-state current: ITRM=430A Critical rate-of-rise of on-state current: di/dt=1200A/s Gate trigger current: I GT=20mA max With built-in reverse diode 10.0 -0.5 Features 1.20.2 2.590.2 0.5 1.270.2 +0.2 Parameter Symbol 0.760.1 Ratings Unit Conditions 2.540.5 Tj=-40 to +125C, Repetitive peak off-state voltage VDRM 600 V Repetitive surge peak on-state current ITRM 430 A Critical rate-of-rise of on-state current di/dt 1200 A/s * Peak forward gate current IFGM 2.0 A f 50Hz, duty 10% f 50Hz, duty 10% f 50Hz PGM 5.0 W Average gate power loss PG (AV) 0.5 W Peak reverse gate voltage VRGM 5 V Peak gate power loss Diode repetitive peak surge forward current A 240 I FRM 11.0 0.86 -0.1 Absolute Maximum Ratings Junction temperature Tj -40 to +125 C Storage temperature Tstg -40 to +125 C 2.540.5 RGK=1k VD 430V, 100kcycle, * 0.40.1 (1). Cathode (K) (2). Anode (A) (3). Gate (G) (1) (2) (3) Wp=1.3s, Ta=125C VD Weight: Approx. 1.5g Measurement circuit 430V, 100kcycle, L * Wp=1.3s, Ta=125C * The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to VD Sample C G1 cool down the junction temperature of the device to 125C. This process shall be repeated up to 100K cycles. G2 Electrical Characteristics (Tj=25C) Ratings Symbol min typ Unit Conditions max IT=10A On-state voltage VTM 1.4 V Gate trigger voltage VGT 1.5 V VD=6V, RL=10 Gate trigger current IGT 20 mA VD=6V, RL=10 Gate non-trigger voltage VGD Holding current IH 0.1 2 10.0 V VD=480V, Tj=125C mA RG-K=1k, Tj=25C Off-state current (1) IDRM (1) 100 A VD=VDRM, RG-K=1k, Tj=25C Off-state current (2) IDRM (2) 1 mA VD=VDRM, RG-K=1k, Tj=125C Thermal resistance Rth 4.0 C/W Diode forward voltage VF 1.4 V Junction to case IF=10A Current waveform (1cycle) (Ta=25C) 100A/div Parameter 2s/div 106 Rectifier Diodes for Alternators Absolute maximum ratings Part No. SG-9CNS Electrical Characteristics VRM (V) IF (AV) (A) IFSM (A) Tstg (C) VF (V) max 200 20 200 -40 to +150 200 20 300 200 35 350 Fig. No. VZ (V) Condition IF (A) IR (mA) max 1.10 20 0.25 -- -- 1 -40 to +150 1.10 30 0.25 -- -- 2 -40 to +150 1.10 35 0.25 -- -- 2 Condition IZ (mA) SG-9CNR SG-9LCNS SG-9LCNR SG-9LLCNS SG-9LLCNR External Dimensions (unit: mm) 1.5 1.5 3.10.1 3.10.1 S: 19.01.0 R: 23.01.0 Fig. 2 S: 19.01.0 R: 23.01.0 Fig. 1 1 50.4 8.40.2 S type R type 9.50.2 Polarity 1.2 7.00.2 8.40.2 Polarity 1.2 50.4 1 (R0.5) S type R type 107 High-voltage Diodes for Igniters Part No. VRM (kV) Electrical Characteristics (Ta=25C) Absolute Maximum Ratings IF (AV) IRSM IRSM (mA) (mA) (A) Peak value of 50 Hz Peak value single shot half-wave triangular of 50 Hz wave signal half-wave with 100s half-power average signal bandwidth SHV-05JS 2.5 30 30 3 SHV-08J 4.0 30 30 3 SHV-30J 15.0 30 10 3 Tj Tstg VF (V) max (C) IR Vz (A) (kV) VR =VRM IR =100A IF (mA) max Condition 5 -40 to +150 8 10 10 30 Fig. No. 2.6 to 5.0 1 4.5 to 8.0 2 16.0 to 30.0 3 External Dimensions (unit: mm) Fig. 2 (SHV-08J) 0.5 2.50.2 C0.5 3.00.2 0.6 Fig. 1 (SHV-05JS) C0.5 27min 27min 5 27min Lot No. Part No. code and cathode marking Part No. code and cathode marking (white) 0.6 3.00.2 120.2 27min Part No. code and cathode marking (white) 108 27min Lot No. Fig. 3 (SHV-30J) 27min 80.2 0.2 Power Zener Diode (Ta=25C) Absolute Maximum Ratings Part No. PR (W) I ZSM (A) 10ms rectangular wave single shot VDC (V) SFPZ-68 50 20 2 SPZ-G36 450 30 11 1500 20 65 PZ 628 Tj Tstg (C) -40 to +150 Electrical Characteristics VZ (V) 1mA instantaneous current IR (A) max I R (H) (mA) max External dimensions 283.0 10 1.0 1 363.6 5 0.1 2 283.0 500 1.0 3 Remarks Surface-mount type External Dimensions (unit: mm) Fig. 2 2.6 0.2 5.4 4.1 2.9 5.1 1.35 0.4 +0.4 -0.1 1.10.2 1.50.2 0.7 1.2max c 4.9 0 to 0.25 0.8 0.1 1.150.1 2.290.5 2.290.5 0.8 0.1 0.5 0.2 2.0min b 2.5 0.4 2.05 0.2 0.05 5.5 0.4 a 1.35 0.4 0.16 0.55 0.1 1.7 0.5 5.40.4 1.37 2.3 0.4 6.5 0.4 4.5 0.2 5.0 Fig. 1 0.55 0.1 1.5 max a) Part No. b) Polarity c) Lot No. Fig. 3 1.3 0.05 C2 56.0 0.7 10.0 0.02 Cathode marking 10.0 0.2 109 General-purpose Diodes Rectifier Diodes Surface-mount Type Absolute Maximum Ratings Part No. VRM (V) 1.0 1.0 10 -40 to +150 0.98 1.0 10 30 -40 to +150 1.0 1.0 10 45 -40 to +150 0.98 1.0 10 I FSM (A) 0.9 30 -40 to +150 SFPM-62 1.0 45 SFPM-54 0.9 1.0 200 400 VF (V) max Condition I F (A) Tstg I F (AV) (A) SFPM-52 Electrical Characteristics IR (A) max Tj (C) Absolute Maximum Ratings Fig. No. 1 VRM (V) Absolute Maximum Ratings Part No. VRM (V) EM 1Y 100 RM 4Y I F (AV) (A) I FSM (A) Tj Tstg (C) VF (V) Condition max I F (A) IR (A) max Fig. No. 45 -40 to +150 0.97 1.0 10 4 3.0 200 -40 to +150 0.95 3.0 10 8 35 -40 to +150 0.98 1.0 10 2 -40 to +150 0.97 1.0 10 -40 to +150 0.97 1.0 50 -40 to +150 0.95 EM01Z 1.0 45 EM 1Z RM 1Z 200 RO 2Z RM 11C 1000 1.2 100 -40 to +150 0.95 2.5 10 7 RM 4C 3.0 150 -40 to +150 0.95 3.0 10 8 Center-tap Type Absolute Maximum Ratings (C) -40 to +150 1.10 10 4 FMM-22S,R 10 100 -40 to +150 1.10 1.0 5 5 FMM-32S,R 20 120 -40 to +150 1.10 10 100 -40 to +150 1.10 20 120 -40 to +150 1.10 10 100 -40 to +150 1.10 20 120 -40 to +150 1.10 10 FMM-24S,R 0.91 1.5 10 5 FMM-26S,R -40 to +150 0.95 3.0 10 8 FMM-36S,R 35 -40 to +150 0.98 1.0 10 2 -40 to +150 0.97 1.0 10 3 -40 to +150 0.97 1.0 10 4 -40 to +150 0.95 1.0 5 5 -40 to +150 0.92 1.2 10 4 -40 to +150 0.92 1.5 10 100 -40 to +150 0.91 1.5 10 150 -40 to +150 0.91 1.5 10 5 RM 3 2.5 150 -40 to +150 0.95 2.5 10 7 RM 4 3.0 200 -40 to +150 0.95 3.0 10 8 35 -40 to +150 0.98 1.0 10 2 -40 to +150 0.97 1.0 10 3 -40 to +150 0.97 1.0 10 4 -40 to +150 0.95 1.0 5 5 -40 to +150 0.92 1.2 10 4 -40 to +150 0.92 1.5 10 6 -40 to +150 0.92 1.5 10 5 -40 to +150 0.91 1.5 10 6 150 -40 to +150 0.91 1.5 10 5 7 1.0 45 EM 1A RM 1A 50 EM 2A 80 RO 2A 600 RM 11A 1.2 100 RM 2A RM 10A RM 3A 2.5 150 -40 to +150 0.95 2.5 10 RM 4A 3.0 200 -40 to +150 0.95 3.0 10 RM 4AM 3.2 350 -40 to +150 0.92 3.5 10 RM 1B 0.8 40 -40 to +150 1.2 1.0 5 EM 1B 1.0 35 -40 to +150 0.97 1.0 20 -40 to +150 0.92 1.2 10 -40 to +150 0.92 1.5 10 6 -40 to +150 0.92 1.5 10 5 -40 to +150 0.91 1.5 10 6 150 -40 to +150 0.91 1.5 10 5 8 5 4 EM 2B 80 RO 2B RM 11B 800 1.2 100 RM 2B RM 10B RM 3B 2.0 150 -40 to +150 0.95 2.5 10 7 RM 4B 3.0 150 -40 to +150 0.95 3.0 10 8 Tstg Condition I F (A) 10 5.0 IR (A) max Fig. No. 10 10 10 10 9 10 10 5.0 10 9 10 10 400 FMM-34S,R 6 Tj 200 6 EM01A Electrical Characteristics 120 -40 to +150 AM01A 110 150 200 RM 10 6 2.0 20 10 1.2 10 Condition I F (A) RM 3C 120 RM 2 1.5 100 1.5 80 0.91 -40 to +150 3.0 400 5 -40 to +150 80 FMM-31S,R 1.5 RO 2 10 0.97 3 0.91 EM 2 1.5 -40 to +150 VF (V) max 0.92 50 0.92 35 1.5 RM 1 6 -40 to +150 1.0 (C) I FSM (A) -40 to +150 45 10 1.2 EM 1C RM 4Z 1.0 1.5 -40 to +150 I F (AV) (A) -40 to +150 EM 1 4 0.92 40 VRM (V) 80 EM01 5 20 0.8 RM 10Z AM01 5 1.0 RM 1C Part No. 100 1.2 RM 2Z 1.0 VF (V) max Electrical Characteristics 1.0 AM01Z Fig. No. Tstg I FSM (A) RM 2C Axial Type Electrical Characteristics IR (A) max Tj I F (AV) (A) RO 2C 1 SFPM-64 Part No. 10 5.0 10 9 10 10 600 10 General-purpose Diodes Fast Recovery Rectifier Diodes Axial Type trr1=I F /IRP =1: 1, trr2=I F /I RP =1: 2 Absolute Maximum Ratings Part No. VRM (V) I F (AV) I FSM (A) (A) Tj Absolute Maximum Ratings Electrical Characteristics IR (A) max trr1 (s) max trr2 (s) max Fig. No. (C) VF (V) max Tstg Part No. VRM (V) Electrical Characteristics VF (V) max IR (A) max trr1 (s) max trr2 (s) max Fig. No. (C) -40 to +150 1.4 10 0.4 0.18 3 -40 to +150 1.4 10 0.4 0.18 4 20 -40 to +150 1.5 10 0.4 0.18 20 -40 to +150 1.2 10 0.4 0.18 20 -40 to +150 1.5 10 0.4 0.18 6 -40 to +150 1.1 10 0.4 0.18 5 -40 to +150 1.1 10 0.4 0.18 6 200 -40 to +150 0.95 10 0.4 0.18 7 50 -40 to +150 1.5 10 0.4 0.18 8 150 -40 to +150 1.2 50 0.4 0.18 7 8 I F (AV) I FSM (A) (A) Tj Tstg EU 2YX 1.2 25 -40 to +150 0.9 10 0.2 0.08 4 EU02A RU 2YX 1.5 30 -40 to +150 0.95 10 0.2 0.08 5 EU 2A RU 3YX 2.0 50 -40 to +150 0.95 10 0.2 0.08 6 RU 2 70 -40 to +150 1.3 10 0.4 0.18 8 RU 2AM 80 -40 to +150 0.97 10 0.4 0.18 7 RU 3A 70 -40 to +150 1.3 10 0.4 0.18 8 RU 20A -40 to +150 2.5 10 0.4 0.18 3 RU 3AM -40 to +150 2.5 10 0.4 0.18 4 RU 30A 15 -40 to +150 1.7 10 0.4 0.18 2 RU 4A RF 1Z 15 -40 to +150 2.0 10 0.4 0.18 5 RU 31A AS01Z 20 -40 to +150 1.5 10 1.5 0.6 2 RU 4AM 3.5 70 -40 to +150 1.3 10 0.4 0.18 30 -40 to +150 1.35 10 4.0 1.3 4 RU 1B 0.25 15 -40 to +150 2.5 10 0.4 0.18 35 -40 to +150 1.3 5 4.0 1.3 5 RF 1B 15 -40 to +150 2.0 10 0.4 0.18 -40 to +150 2.5 10 1.5 0.6 3 RH 1B 35 -40 to +150 1.3 5 4.0 1.3 -40 to +150 2.5 10 1.5 0.6 4 RS 1B 0.7 30 -40 to +150 2.5 10 1.5 0.6 -40 to +150 1.3 10 0.4 0.18 2 RU 2B 1.0 20 -40 to +150 1.5 10 0.4 0.18 -40 to +150 1.4 10 0.4 0.18 3 RU 3B 1.1 20 -40 to +150 1.5 10 0.4 0.18 6 -40 to +150 1.4 10 0.4 0.18 4 RU 4B 3.0 50 -40 to +150 1.6 10 0.4 0.18 8 20 -40 to +150 1.5 10 0.4 0.18 5 RU 1C 0.2 15 -40 to +150 3.0 10 0.4 0.18 70 -40 to +150 1.3 10 0.4 0.18 8 RH 1C 0.6 35 -40 to +150 1.3 5 4.0 1.3 80 -40 to +150 0.97 10 0.4 0.18 7 RU 2C 0.8 20 -40 to +150 1.5 10 0.4 0.18 -40 to +150 2.5 10 0.4 0.18 5 RU 3C 1.5 20 -40 to +150 2.5 10 0.4 0.18 6 -40 to +150 2.5 10 0.4 0.18 3 RU 4C 2.5 50 -40 to +150 1.6 50 0.4 0.18 8 -40 to +150 2.5 10 0.4 0.18 4 ES01F -40 to +150 2.0 10 1.5 0.6 3 15 -40 to +150 1.7 10 0.4 0.18 2 ES 1F -40 to +150 2.0 10 1.5 0.6 4 RF 1 15 -40 to +150 2.0 10 0.4 0.18 5 RC 2 -40 to +150 2.0 10 4.0 1.3 5 AS01 20 -40 to +150 1.5 10 1.5 0.6 2 EH 1 30 -40 to +150 1.35 10 4.0 1.3 4 RH 1 35 -40 to +150 1.3 5 4.0 1.3 5 -40 to +150 2.5 10 1.5 0.6 -40 to +150 2.5 10 1.5 0.6 25 -40 to +150 1.3 10 0.4 0.18 2 15 -40 to +150 1.4 10 0.4 0.18 3 15 -40 to +150 1.4 10 0.4 0.18 4 20 -40 to +150 1.2 10 0.4 0.18 5 20 -40 to +150 1.5 10 0.4 0.18 50 -40 to +150 1.1 10 0.4 0.18 200 -40 to +150 0.95 10 0.4 0.18 7 50 -40 to +150 1.5 10 0.4 0.18 8 150 -40 to +150 1.2 50 0.4 0.18 7 70 -40 to +150 1.3 10 0.4 0.18 8 -40 to +150 2.5 10 0.4 0.18 -40 to +150 2.5 10 0.4 -40 to +150 2.5 10 100 RU 4Y 3.5 RU 30Y RU 4YX 4.0 EU01Z 0.25 15 EU 1Z AU01Z 0.5 0.6 EH 1Z RH 1Z ES01Z 200 0.7 30 ES 1Z AU02Z 0.8 25 EU02Z 15 EU 2Z 1.0 RU 2Z RU 4Z 3.5 RU 30Z RU 1 EU01 0.25 15 EU 1 AU01 0.5 0.6 ES01 0.7 30 ES 1 400 AU02 0.8 EU02 1.0 EU 2 RU 2M 1.1 RU 3 1.5 RU 3M RU 30 2.0 RU 4 RU 4M 3.5 RU 1A EU01A 0.25 5 1.1 600 1.5 50 2.0 3.0 0.6 800 1000 1500 2000 0.5 0.2 20 20 5 5 Frame 2-pin Type 4 Absolute Maximum Ratings Part No. VRM (V) I F (AV) I FSM (A) (A) FMU-G2YXS 100 10.0 100 Electrical Characteristics IR (A) max trr1 (s) max trr2 (s) max Fig. No. (C) VF (V) max -40 to +150 1.0 50 0.2 0.08 11 Tj Tstg 6 3.0 RU 31 15 1.0 15 Center-tap Type Absolute Maximum Ratings Electrical Characteristics IR (A) max trr1 (s) max trr2 (s) max Fig. No. (C) VF (V) max -40 to +150 1.5 50 0.4 0.18 9 30 -40 to +150 1.5 50 0.4 0.18 10.0 40 -40 to +150 1.5 50 0.4 0.18 Part No. VRM (V) I F (AV) I FSM (A) (A) 5 FMU-21S,R 100 10.0 40 0.18 3 FMU-12S,R 5.0 0.4 0.18 4 FMU-22S,R Tj Tstg 9 EU 1A 200 RF 1A 15 -40 to +150 2.0 10 0.4 0.18 5 FMU-32S,R 20.0 80 -40 to +150 1.5 50 0.4 0.18 AS01A 20 -40 to +150 1.5 10 1.5 0.6 2 FMU-14S,R 5.0 30 -40 to +150 1.5 50 0.4 0.18 EH 1A 30 -40 to +150 1.35 10 4.0 1.3 4 FMU-24S,R 10.0 40 -40 to +150 1.5 50 0.4 0.18 RH 1A 35 -40 to +150 1.3 5 4.0 1.3 5 FMU-34S,R 20.0 80 -40 to +150 1.5 50 0.4 0.18 -40 to +150 2.5 10 1.5 0.6 3 -40 to +150 2.5 10 1.5 0.6 4 -40 to +150 2.5 10 1.5 0.6 5 600 0.6 9 ES01A ES 1A RS 1A 0.7 10 30 400 10 111 General-purpose Diodes Ultra Fast Recovery Rectifier Diodes Surface-mount Type trr1=I F /IRP =1: 1, trr2=I F /I RP =1: 2 Absolute Maximum Ratings Part No. VRM (V) SFPL-52 200 I F (AV) I FSM (A) (A) 0.9 25 (C) VF (V) max IR (A) max trr1 (s) max trr2 (s) max -40 to +150 0.98 10 50 35 Tj Tstg Frame 2-pin Type Electrical Characteristics Absolute Maximum Ratings Fig. No. Part No. VRM (V) 200 1.0 25 -40 to +150 0.98 10 50 trr1 (ns) max trr2 (ns) max (C) -40 to +150 1.15 50 150 70 -40 to +150 0.98 250 40 30 100 -40 to +150 0.92 100 100 50 10.0 150 -40 to +150 0.98 500 40 30 5.0 70 -40 to +150 1.3 100 50 35 -40 to +150 1.0 50 100 50 -40 to +150 1.3 100 50 35 -40 to +150 2.5 500 100 50 -40 to +150 1.2 50 100 50 -40 to +150 1.5 100 50 35 -40 to +150 2.5 500 100 50 -40 to +150 1.7 100 65 40 -40 to +150 1.7 100 50 30 FMP-G12S Tj Tstg 5.0 200 11 FMN-G12S FML-G22S Axial Type FML-G13S Absolute Maximum Ratings Part No. VRM (V) AG01Y 1.0 EG01Y EG 1Y RG 10Y 70 RG 2Y RG 4Y AG01Z EG01Z EG 1Z AL01Z 1.1 RG 10Z RN 1Z 200 100 50 2 FMN-G16S 30 -40 to +150 1.2 100 100 50 3 FML-G16S 30 -40 to +150 1.2 100 100 50 4 FMG-G36S -40 to +150 1.1 500 100 50 5 FML-G26S -40 to +150 1.1 500 100 50 6 -40 to +150 1.3 1000 100 50 8 -40 to +150 1.8 100 100 50 2 -40 to +150 1.9 50 100 50 3 0.8 15 -40 to +150 1.7 50 100 50 4 25 -40 to +150 0.98 100 50 35 2 50 -40 to +150 0.92 10 100 50 3 -40 to +150 1.5 500 100 50 5 1.5 -40 to +150 1.5 500 100 50 6 20 -40 to +150 0.98 100 100 50 4 25 -40 to +150 0.98 50 40 30 3 60 -40 to +150 0.92 20 100 50 -40 to +150 0.98 50 50 35 30 70 3.0 RG 4Z RL 3Z RL 4Z 3.5 RN 4Z 80 80 120 AG01 0.7 EG01 EG 1 0.8 RG 10 400 1.2 15 15 50 -40 to +150 0.98 100 50 35 -40 to +150 0.92 50 100 50 -40 to +150 0.92 50 100 50 7 -40 to +150 1.7 1000 100 50 8 -40 to +150 0.95 50 50 35 7 6 trr1 (ns) max trr2 (ns) max -40 to +150 1.8 500 100 50 FML-12S -40 to +150 0.98 150 40 30 FMG-22S,R -40 to +150 1.8 500 100 50 FML-22S -40 to +150 0.98 250 40 30 FMG-32S,R -40 to +150 1.8 1000 100 50 -40 to +150 0.98 600 40 30 9 10.0 20.0 65 150 FML-32S FMG-13S,R 10 35 -40 to +150 1.8 500 100 50 FML-13S 40 -40 to +150 1.3 50 50 35 FMG-23S,R 65 -40 to +150 1.8 500 100 50 5.0 70 -40 to +150 1.3 100 50 35 FML-33S 100 -40 to +150 1.3 200 50 35 -40 to +150 1.8 50 100 50 4 FMG-33S,R 150 -40 to +150 1.8 1000 100 50 -40 to +150 1.8 500 100 50 5 FMG-14S,R 35 -40 to +150 2.0 500 100 50 -40 to +150 1.8 500 100 50 6 40 -40 to +150 1.3 50 50 35 65 -40 to +150 2.0 500 100 50 -40 to +150 1.8 500 100 50 8 -40 to +150 1.3 100 50 35 7 Fig. No. 35 FML-23S 80 9 10.0 20.0 10 5.0 FML-14S 9 FMG-24S,R 8.0 400 FML-24S 10.0 70 -40 to +150 1.3 100 50 35 FMG-34S,R 16.0 100 -40 to +150 2.0 1000 100 50 20.0 100 -40 to +150 1.3 200 50 35 10 10 -40 to +150 2.0 100 100 50 3 FML-34S 15 -40 to +150 1.8 100 100 50 2 FMG-26S,R 0.6 10 -40 to +150 2.0 100 100 50 4 FMG-36S,R 1.0 50 -40 to +150 2.0 500 100 50 5 FML-36S -40 to +150 2.0 500 100 50 1.2 30 -40 to +150 1.55 50 50 35 50 -40 to +150 2.0 500 100 50 8 60 -40 to +150 1.7 50 50 35 7 80 -40 to +150 1.5 50 50 35 8 600 6.0 50 -40 to +150 2.2 500 100 50 15.0 80 -40 to +150 2.2 1000 100 50 20.0 100 -40 to +150 1.7 100 65 35 9 10 6 -40 to +150 4.0 100 200 80 2 -40 to +150 4.0 5 200 80 3 10 -40 to +150 4.0 5 100 50 5 0.5 10 -40 to +150 3.3 50 100 50 3 RG 1C 0.7 10 -40 to +150 3.3 20 100 50 5 RG 4C 2.0 60 -40 to +150 3.0 500 100 50 8 0.1 5 -40 to +150 7.0 20 200 80 5 2000 IR (A) max 3 80 RP 1H VF (V) max 2 3.5 0.4 (C) 50 3.0 EG01C FMG-12S,R Electrical Characteristics 50 RL 3 1000 I F (AV) I FSM (A) (A) Tstg 100 RG 4 5 VRM (V) Tj 100 6 RU 1P Absolute Maximum Ratings Part No. 50 35 0.2 12 100 50 EP01C 11 70 2.0 10 AP01C 50 150 1.8 1.3 3.0 100 100 -40 to +150 -40 to +150 RL 4A 50 3.5 -40 to +150 40 2.0 4.0 -40 to +150 Center-tap Type 300 2.0 RL 3A -40 to +150 60 50 RL 2 RG 4A 30 5.0 35 4 600 4.0 1000 FMG-G3CS 50 50 RL 2A FMG-G2CS 12 11 100 100 RG 2A 100 FMD-G26S 50 10 RG 10A 10.0 80 150 1.3 EG 1A 8.0 0.92 -40 to +150 AG01A 600 0.95 20 11 50 -40 to +150 8 11 11 -40 to +150 1.5 0.5 50 5.0 200 EL 1 EG01A 4.0 5.0 5 70 FML-G14S FMG-G26S 15 2.0 RN 3Z 112 100 0.7 RN 2Z RG 2 1.2 50 5.0 400 (C) 100 RL 10Z RL 2Z Fig. No. 3.5 EL 1Z EL02Z trr2 (ns) max -40 to +150 Tstg 50 1.2 RG 2Z trr1 (ns) max 25 Tj 1.5 1.0 EN 01Z IR (A) max VF (V) max I F (AV) I FSM (A) (A) 300 FMN-G14S Electrical Characteristics Fig. No. 65 FML-G12S 35 IR (A) max VF (V) max I F (AV) I FSM (A) (A) 1 SFPL-62 Electrical Characteristics Bridge Type Absolute Maximum Ratings Part No. VRM (V) RBV-602L 200 I F (AV) I FSM (A) (A) 6 100 Electrical Characteristics IR (A) max trr1 (ns) max trr2 (ns) max Fig. No. (C) VF (V) max -40 to +150 1 250 50 35 13 Tj Tstg General-purpose Diodes Schottky Barrier Diodes Surface-mount Type Frame 2-pin Type Absolute Maximum Ratings Part No. VRM (V) SFPJ-53 I F (AV) (A) I FSM (A) 1.0 30 SFPE-63 2.0 SFPJ-63 Tj Tstg Electrical Characteristics VF (V) IR (mA) (C) max max 0.45 1.0 10 FMB-G14 -40 to +150 0.55 0.2 (Tj=150C) 20 FMB-G14L -40 to +150 0.45 2.0 20 SFPJ-73 3.0 50 -40 to +150 0.45 3.0 30 SPJ-63S 6.0 50 -40 to +150 0.45 3 30 (Tj=125C) SFPB-54 1.0 30 -40 to +150 0.55 1 50 SFPB-64 1.5 60 -40 to +150 0.55 5 40 -40 to +150 0.6 0.2 SFPE-64 2.0 SFPB-74 40 20 60 -40 to +150 0.5 5 50 50 -40 to +150 0.55 3.5 50 SPB-G54S 5.0 60 -40 to +150 0.55 5 50 SPB-64S 6.0 50 -40 to +150 0.55 3.5 50 SFPB-56 0.7 10 -40 to +150 0.62 1 25 -40 to +150 0.69 1 15 40 FMB-G24H 14 Electrical Characteristics H*IR Fig. (mA) No. Ta=100C max VF (V) IR (mA) (C) max max -40 to +150 0.55 5 100 -40 to +150 0.55 5 100 150 -40 to +150 0.55 10 65 I F (AV) (A) I FSM (A) 3.0 60 5.0 60 10.0 Tstg 11 FMB-G16L 60 6.0 50 -40 to +150 0.62 5 50 11 FMB-G19L 90 4.0 60 -40 to +150 0.81 5 35 11 1 40 -40 to +150 0.62 2 20 Center-tap Type Absolute Maximum Ratings 14 7.5 1 2.0 SFPB-76 VRM (V) Tj 50 3.0 60 1 (Tj=150C) SPB-G34S SFPB-66 Part No. -40 to +150 40 30 Absolute Maximum Ratings H*IR Fig. (mA) No. Ta=100C max Part No. VRM (V) Electrical Characteristics H*IR Fig. (mA) No. Ta=100C max VF (V) IR (mA) (C) max max -40 to +150 0.55 5 35 -40 to +150 0.55 5 35 60 -40 to +150 0.55 5 35 80 -40 to +150 0.6 0.5 30 75 -40 to +150 0.58 5 35 -40 to +150 0.55 7.5 50 -40 to +150 0.6 0.75 50 50 I F (AV) (A) I FSM (A) FMB-24 4.0 50 FMB-24M 6.0 60 Tj Tstg 9 FMB-24L 10 SPB-G56S 5.0 60 -40 to +150 0.7 3 50 SFPB-59 0.7 10 -40 to +150 0.81 1 5 1.5 40 -40 to +150 0.81 2 10 90 14 1 SFPB-69 FME-24L FMB-34S 12 10 40 FMB-24H 9 FME-24H 100 15 MPE-24H FMB-34 Axial Type VRM (V) 0.6 -40 to +150 0.55 10 65 300 -40 to +150 0.55 20 100 0.75 (Tj=150C) I F (AV) (A) AK 03 I FSM (A) Tj Tstg Electrical Characteristics VF (V) IR (mA) 30 FMB-26 H*IR Fig. (mA) No. Ta=100C max 40 -40 to +150 0.62 1 20 10 50 -40 to +150 0.62 2.5 50 4.0 9 FMB-26L 60 (C) max max FMB-36 15 100 -40 to +150 0.62 5 75 25 -40 to +150 0.55 1 (Tj=100C) 50 2 FMB-36M 30 150 -40 to +150 0.62 10 150 1.0 10 40 -40 to +150 0.55 5 50 3 FMB-29 4.0 50 -40 to +150 0.81 3 15 1.5 40 -40 to +150 0.55 5 50 4 FMB-29L 8.0 60 -40 to +150 0.81 5 35 1.7 60 -40 to +150 0.55 5 50 5 FMB-39 15 60 -40 to +150 0.81 10 50 2.5 50 -40 to +150 0.55 5 50 6 FMB-39M 20 150 -40 to +150 0.81 15 60 50 -40 to +150 0.45 3 30 80 -40 to +150 0.55 5 50 25 -40 to +150 0.55 1 (Tj=100C) 50 2 40 -40 to +150 0.55 5 50 3 1.5 40 -40 to +150 0.55 5 50 4 RK 14 1.7 60 -40 to +150 0.55 5 50 5 RK 34 2.5 50 -40 to +150 0.55 5 50 6 RK 44 3.0 80 -40 to +150 0.55 5 50 8 -40 to +150 0.62 1 EK 06 -40 to +150 0.62 1 EK 16 -40 to +150 0.62 1 15 4 -40 to +150 0.62 1 15 5 EK 03 EK 13 RK 13 30 RK 33 RJ 43 3.0 RK 43 AK 04 EK 04 40 AK 06 0.7 60 1.5 7.5 2 7.5 3 10 25 RK 16 RK 36 2.0 40 -40 to +150 0.62 2 20 6 RK 46 3.5 70 -40 to +150 0.62 3 35 8 -40 to +150 0.81 1 5 2 EK 09 -40 to +150 0.81 1 5 3 EK 19 -40 to +150 0.81 2 10 4 -40 to +150 0.81 2 10 5 AK 09 0.7 90 1.5 9 90 10 8 1.0 EK 14 15 10 FMB-34M Absolute Maximum Ratings Part No. -40 to +150 150 10 40 RK 19 RK 39 2.0 50 -40 to +150 0.81 3 15 6 RK 49 3.5 60 -40 to +150 0.81 5 35 8 Bridge Type Absolute Maximum Ratings Part No. VRM (V) I F (AV) (A) I FSM (A) RBV-406B 60 4.0 40 Electrical Characteristics VF (V) IR (mA) (C) max max -40 to +150 0.62 2 Tj Tstg H*IR Fig. (mA) No. Ta=100C max 20 13 113 General-purpose Diodes - External Dimensions (Unit: mm) Fig. 2 Fig. 3 2.6 0.2 5.0 0.2 62.3 0.7 2.9 0.1 50.0 1.0 0.05 2.05 0.2 Fig. 5 Fig. 6 0.78 0.05 Fig. 7 0.98 0.05 5.2 0.2 Fig. 10 16.9 20.0 8.4 S type (SBD) R type a b c (13.5) 0.45 a) Part No. b) Lot No. 2.3 3.4 1.0 16.5 0.5 20.0 0.5 3.5 0.8 2.54 3.3 2.6 3.9 1.35 1.35 0.85 5.0 15.0 9.0 C0.5 4 3.3 0.8 2.8 5.0 4.2 2.8 10.0 Cathode marking 50.0 0.1 9.10.2 62.5 0.7 4.0 0.2 Fig. 9 1.4 0.1 Cathode marking 7.2 0.2 7.2 0.2 4.0 0.2 Fig. 8 1.2 0.05 Cathode marking 62.5 0.7 Cathode marking 2.54 2.7 0.2 5.45 S type (SBD) 5.45 R type +0.2 0.65 -0.1 2.6 a) Part No. b) Polarity c) Lot No. 8.0 0.2 5.1 62.5 0.7 2.7 0.2 1.5 0.2 +0.4 -0.1 a b Cathode marking 1.10.2 1.35 0.4 2.0min 2.4 0.1 0.78 0.05 Cathode marking Cathode marking 1.35 0.4 114 0.6 0.05 0.57 0.02 5.0 0.2 4.5 0.2 Fig. 4 62.3 0.7 Fig. 1 6.5 0.2 General-purpose Diodes - External Dimensions (Unit: mm) 0.85 3.5 20.0 0.5 b a b c + 2.3 3.4 1.0 5.45 5.45 - 4-1.0 0.65 +0.2 -0.1 10 0.7 7.5 7.5 2.7 a) Part No. b) Lot No. 2.6 0.45 5.08 20.0 a 16.5 0.2 (13.5) 3.9 1.35 4.6 3.6 17.5 20.0 16.9 8.4 0.8 2.6 3.2 0.1 30 C3 3.3 0.8 2.8 5.0 4.0 2.8 11 3.3 5.0 15.0 9.0 4.2 10.0 2.2 Fig. 13 Fig. 12 Full-mold 13 Fig. 11 Full-mold a) Part No. b) Polarity c) Lot No. Fig. 15 0.16 1.3 10.0 8.5 1.27 1.2 0.86 1.15 0.8 0.1 0.1 0.8 0.1 2.290.5 2.290.5 0.5 0.2 2.5 0.4 0 to 0.25 2.59 11.0 4.9 1.3 1.2max c 4.44 3.19 0.7 5.5 0.4 b 11.3 2.9 a 10.2 1.37 0.55 0.1 1.7 0.5 5.40.4 5.4 4.1 5.0 2.3 0.4 6.5 0.4 1.4 Fig. 14 0.76 0.55 0.1 2.54 2.54 0.4 1.5 max 1 2 3 a) Part No. b) Polarity c) Lot No. 115 General-purpose Diodes - Taping Specifications Taping Specifications Taping Name 1.35 0.4 1.10.2 1.5 0.2 +0.4 2.0 0.5 5.5 13 0.5 1,800 pcs. 4.0 0.1 Pull out direction 2.0 per reel 210.8 R1.0 2.6 5.1-0.1 Marking of Part No., Lot No., quantity, etc. 1.5 -0 5.5 0.05 12.0 0.3 +0.1 2.0min +0.1 4.0 0.1 65 1.35 0.4 0.05 -0.05 2.05 0.2 2.6 0.2 4.5 0.2 Packaging Quantity Reel 1.75 0.1 Emboss taping V Packaging Dimensions (mm) and Markings Taping Dimensions (mm) A suffix "V" is added to Part No. for tape packaging. 178 2 3.1 (1) The cathode is on the right-hand side when viewed in the pull out direction. 14 1.5 2.0 0.5 (2) The electrode side of the product is on the bottom when casing. (3) A leader tape of 150 to 200 mm in length is provided. (4) The leading and trailing edge of the leader tape are provided with a pitch of at least 10 mm. (5) Reversed polarity taping available on request (specify taping name "VL"). Reel Marking of Part No., Lot No. and quantity +0.5 1.0 -1.0 0.5max 0.5 max (Blue) 6.0 A suffix "V" is added to Part No. for tape packaging. +5 0 83 2 5.08 +0.38 V (White) 52.0 +1 0 6.0 5,000 pcs. Core Flange 29 1 75 1 15 2 340 2 Axial taping +5 0 75 2 0.5max Stopper 25 0.1 2 81 Broken lines: perforations 0.5 max 5.08 +0.38 1.0 +0.5 -1.0 77max 0.5max V1 (Blue) 6.0 +5 0 ax 77m 255max +1 0 6.0 +5 0 per box (2.7 body) 3000 pcs. (2.4 body) Marking of Part No., Lot No. and quantity 0.5max Ammunition (Ammo) pack Broken lines: perforations +0.5 1.0 ---1.0 0.5max A suffix "V0" is added to Part No. for tape packaging. (Blue) 6.0 +5 0 0.5 max 5.08 + 0.38 95max 2,000 pcs. V0 ax (White) 26.0 +1 0 6.0 per box (2.7 body) 3000 pcs. (2.4 body) 51m 255max +5 0 Marking of Part No., Lot No. and quantity 0.5max Reel 15 2 Marking of Part No., Lot No. and quantity Core Flange (Blue) 6.0 +5 0 1.0 max 52.0 +1 0 (White) 6.0 +5 0 0.5max 83 2 10 0.2 29 1 75 1 V3 1.0 75 2 Stopper 1,500 pcs. 340 0.5max +0.5 -1.0 2 Axial taping 116 2,000 pcs. 1000 pcs. (4 body) (White) 52.0 Axial taping A suffix "V3" is added to Part No. for tape packaging. 3,000 pcs. (4 body) Ammunition (Ammo) pack Axial taping A suffix "V1" is added to Part No. for tape packaging. per reel 2.7 body 2.4 body 25 0.1 812 per reel (5.2 body) General-purpose Diodes - Taping Specifications Taping Specifications Taping Name Taping Dimensions (mm) Packaging Dimensions (mm) and Markings Axial taping +5 0 (White) +1 0 6.0 +5 0 255max 0.5max 6.35 1.3 12.7 1.0 2.6max Ammunition (Ammo) pack ANODE +1.0 340max 0 2.0 Marking of Part No., Lot No. and quantity 4.0 0.2 ANODE 0.7 0.2 30 22.2 1.0 2.750.5 +1.0 18.0 -0.5 4.0 0.3 45m ax 0 2.0 +0.8 5.0 -0 9.0 0.5 12.5min +1.0 16.5 -0.5 11.0 19.8 1.0 WK CATHODE 5.0 1.0 Radial taping (applies to A0 series) per box 2.7 body 0.6 leads only Marking of Part No., Lot No. and quantity. +1.0 18.0 -0.5 12.5min 1.0 max 9.0 0.5 +0.8 5.0 -0.2 12.7 0.3 Broken lines: perforations 0.7 0.2 3.85 0.7 body) Ammunition (Ammo) pack 6.35 1.3 12.7 1.0 +0.5 A suffix "WS" is added to Part No. for tape packaging. 18.0 -0.5 4.0 0.2 18.0 -0 11max WS 0.7 0.2 5.0 0.5 12.7 0.3 per box (5.2 4,000 pcs. 9.0 0.5 12.5min 3.85 0.7 Radial taping (applies to A0 series) 1.0 1.0 max A suffix "W" is added to Part No. for tape packaging. 1.0 1,000 pcs. Marking of Part No., Lot No. and quantity. ---2.0 0+ 3.0 max 27.5 0.5 (11.5) 4.2 max 12.7 12.7 16.0 0.5 W 77m ODE CATH Radial taping A suffix "WK" is added to Part No. for tape packaging. 52.0 140max 6.0 ax 55m ax (Blue) Company mark 150max A suffix "V4" is added to Part No. for tape packaging. 1.0 max 10 0.2 V4 Broken lines: perforations Ammunition (Ammo) pack 120max +0.5 1.0 - 1.0 0.5max Packaging Quantity 2,500 pcs. per box (2.4 body) 340max 1.5 3.85 0.7 3.0 0.2 12.7 0.3 12.7 1.0 117 General-purpose Diodes - Taping Specifications Power Surface-mount - Taping Specifications Taping Name Packaging Dimensions (mm) and Markings Taping Dimensions (mm) Part No. Pull out direction Materials Disc: both-face white corrugated cardboard Core: foamed styrol Quantity VL Taping name (type) Packaging Quantity Lot No. 3,000 pcs. 2.00.1 4.0 0.1 8.00.1 3.4 max (2.0) +0.1 1.5 -0 1.750.1 per reel A suffix "VL" is added to Part No. for tape packaging. R9 +0.1 1.6 -0 A suffix "VR" is added to Part No. for tape packaging. (12 0 ) (6.0) 0.30.1 0.5 20.5 17.5 20.5 VR R40 1 40.5 23 max 7.5 0.1 13.50.1 10.60.1 6.8 0.1 Pull out direction 16.0 0.3 ) 5 1 (40 3,000 pcs. per reel 131 1 80 330 2 High-voltage Diodes - Taping Specifications Taping Name Packaging Dimensions (mm) and Markings Taping Dimensions (mm) Packaging Quantity 50.5 Axial taping Part No. 1.2 max V1 Lot No. Quantity 6 1.0 58 1 6 1.0 1.0 max VD A suffix "VD" is added to Part No. for tape packaging. 118 340 2 3.50.5 Axial taping 25 1 1.0max 1.0max 6 1.0 58 1 6 1.0 Part No. Lot No. Quantity 29 1.5 75 1.5 25 1 A suffix "V1" is added to Part No. for tape packaging. 5,000 pcs. per reel 29 1.5 75 1.5 3402 8,000 pcs. per reel General-purpose LEDs Ratings Parameter Unit IF mA 30 I F mA/C -0.45 I FP mA VR V GaP GaAsP GaA As A GaInP InGaN 70 C 5 -30 to +85 Ultra highintensity red SELU1250CM Clear SEL1250SM Tinted red SEL1250RM Diffused red Red SEL1850AM Tinted orange SEL1850DM Diffused orange SEL1950KM Tinted orange SEL1450EKM Tinted green Amber -25 to +85 Round Tstg 4 Part No. Lens color f=1kHz, tw=100s -30 to +100 5 C Above 25C 100 3 Top GaN Ratings Emitting color Orange Green SEL1450GM-YG Deep red SEL1110W Diffused white Highintensity red 2.0 2.5 typ 2.8 Tinted red SEL1610W Diffused white SEL1610C Clear 1200 SEL1210R Diffused red 26 SEL1210S Tinted red SEL1810D Diffused orange SEL1810A Tinted orange Amber SEL1910D Orange Diffused orange SEL1910A Tinted orange SEL1710Y Diffused yellow SEL1710K Tinted yellow SEL1410G Diffused green SEL1410E Tinted green Yellow Green Pure green SEL1510C SEL1210RM Red Clear Diffused red SEL1210SM Tinted red SEL1810DM Diffused orange Amber SEL1810AM Tinted orange SEL1910DM Diffused orange Orange SEL1910AM Tinted orange IF (mA) typ 5 700 GaP 4.5 1000 1.75 1.9 2.2 20 2.5 20 660 630 GaA As GaAsP 75 18 1.9 2.5 10 610 GaAsP 10 587 570 2.5 560 2.0 2.5 50 555 GaP 1.9 2.5 20 630 GaAsP 2.5 10 610 GaAsP 10 587 GaAsP 19 1.9 2.5 34 SEL1710KM SEL1410GM Diffused green SEL1410EM Tinted green Pure green SEL1510CM Clear 2.0 2.5 Ultra highintensity red Ultra highintensity amber Ultra highintensity pure green Ultra highintensity blue SELU1210CXM Clear 2.0 2.5 SELU1810CXM Clear 2.0 2.5 570 20 615 A GaInP SELU1D10CXM Clear 3.3 4.0 2000 20 525 InGaN SELU1E10CXM Clear 3.3 4.0 600 20 470 InGaN Green 2 2.0 2.5 65 10 570 2.0 2.5 560 GaP 50 20 555 GaP 280 20 635 A GaInP 20 560 GaP 2.0 2.5 20 555 GaP 20 525 InGaN SELU1E50CM Clear 3.3 4.0 1850 20 470 InGaN SEL1615C Clear 1.75 2.2 700 20 660 GaA As Diffused red 2.0 2.5 1.4 10 700 GaP 12 20 630 GaAsP 8.0 10 610 GaAsP Orange SEL1911D Diffused orange 1.9 2.5 8.0 10 587 GaAsP Yellow SEL1711Y Diffused yellow 2.0 2.5 13 10 570 GaP Green SEL1411G Diffused green 2.0 2.5 30 20 560 GaP SELU1253CMKT Clear 2.0 2.5 200 20 635 A GaInP SELU1853CMKT Clear 2.0 2.5 450 20 615 A GaInP SEL1453CEMKT Tinted green 2.0 2.5 140 20 560 GaP SEL4110S Tinted red Diffused red 2.0 2.5 5 700 GaP SEL4110R 20 630 GaAsP 10 610 GaAsP 10 587 GaAsP 10 570 GaP 20 560 GaP 20 555 GaP 10 700 GaP 20 630 GaAsP 10 610 GaAsP 10 587 GaAsP 10 570 GaP 20 560 GaP 20 555 GaP Ultra highintensity red Ultra highintensity amber Green SEL4210S Tinted red SEL4210R Diffused red SEL4810A Tinted orange SEL4810D Diffused orange SEL4910A Tinted orange SEL4910D Diffused orange SEL4710K Tinted yellow SEL4710Y Diffused yellow SEL4410E Tinted green SEL4410G Diffused green Pure green SEL4510C Clear SEL4114S Tinted red SEL4114R Diffused red SEL4214S Tinted red SEL4214R Diffused red Deep red 84 SEL4814A Tinted orange SEL4814D Diffused orange SEL4914A Tinted orange SEL4914D Diffused orange Amber Orange 3 SEL4714K Tinted yellow SEL4714Y Diffused yellow SEL4414E Tinted green SEL4414G Diffused green Yellow Green Pure green SEL4514C Clear 4 120 72 Red 20 GaAsP 96 190 2.5 GaP 30 587 2.5 6000 Green 37 20 1.9 2.5 75 1.9 GaAsP 60 4.0 Yellow 18 610 2.5 2.5 Orange 20 20 90 1.9 1.9 GaP 36 GaAsP 48 3.3 Amber 20 630 2.5 1.9 GaP 84 20 1.9 Diffused orange 32 2.0 A GaInP 75 SEL1811D 22 10 635 Amber GaAsP 65 typ 20 2.0 Red 2.5 IF (mA) 900 Diffused red 25 2.0 typ 2.5 SEL1211R 14 2.5 max 2.0 Clear Deep red 1.9 typ Red 37 Tinted yellow Yellow 1 Chip material SELU1D50CM Clear Deep red SEL1111R 2.8 SEL1110S Red 5 Round max 5 Cylindrical Diffused red typ Chip material 4.65.6 Egg-shaped SEL1110R IV p (mcd) Condition (nm) VF (V) 4 Round Part No. Lens color Ultra highintensity pure green Ultra highintensity blue Highintensity red Fig. No. Outline Electro-optical characteristics (Ta=25C) Emitting color Contact mount Pure green SEL1550CM Diffused green IV p (mcd) Condition (nm) VF (V) Fig. No. (Ta=25C) Outline Electro-optical characteristics (Ta=25C) Absolute Maximum Ratings Contact mount Uni-Color LED Lamp 5 6 7 2.4 1.7 30 1.9 2.5 17 20 1.9 2.5 15 26 1.9 2.5 8 16 36 2.0 2.5 14 87 2.0 2.5 34 2.0 2.5 2.0 2.5 45 3.8 2.8 40 1.9 2.5 24 20 1.9 2.5 15 26 1.9 2.5 9 11 38 2.0 2.5 27 69 2.0 2.5 48 2.0 2.5 26 119 General-purpose LEDs Diffused red SEL6210S Tinted red SEL6210R Diffused red Red SEL6810A Tinted orange SEL6810D Diffused orange SEL6910A Tinted orange SEL6910D Diffused orange SEL6710K Tinted yellow SEL6710Y Diffused yellow SEL6410E Tinted green SEL6410G Diffused green SEL6510C Clear Amber Orange Yellow Green Pure green SEL6510G 2.5 2.5 2.5 610 Clear SEL2510G Diffused green 2.5 10 587 GaAsP 10 37 2.0 2.5 10 570 GaP 2.0 2.5 20 560 555 4.0 1200 20 525 InGaN 4.0 400 20 470 InGaN SEL2E10C Clear 3.8 4.8 60 20 430 GaN SEL2215S Tinted red Diffused red 1.9 2.5 20 630 GaAsP SEL2215R 10 610 GaAsP 10 587 GaAsP SEL2815A Tinted orange SEL2815D Diffused orange 1.9 Clear 2.0 SEL6914A Tinted orange SEL6914W Diffused white SEL2415E Tinted green GaAsP SEL2415G Diffused green Pure green SEL2515C Clear 2.0 2.5 Deep red SEL2111R Diffused red 2.0 2.5 Orange SEL2911D Diffused orange 1.9 2.5 Green SEL2411G Diffused green 2.0 2.5 SEL6714K Tinted yellow Deep red SEL4117R Diffused red 2.0 Amber SEL4817D Diffused orange Orange SEL4917D Diffused orange 630 2.5 9.0 10 610 GaAsP 2.5 120 20 600 A GaInP 10 587 GaAsP 5.0 11 66 2.0 2.5 20 570 GaP 30 42 2.0 2.5 560 20 60 Diffused yellow 20 2.5 2.5 SEL2715Y GaP 8.0 1.9 80 1.9 Tinted yellow Green SELS6B14C 38 SEL2715K GaP GaP 81 1.9 2.5 53 14 130 10 570 GaP 20 560 GaP 52 20 555 GaP 0.7 10 700 GaP 3.3 10 587 GaAsP 18 20 560 GaP 2.5 1.1 10 700 GaP 1.9 2.5 7.5 10 610 GaAsP 1.9 2.5 7.5 10 587 GaAsP GaP 2.0 2.5 110 110 2.0 2.5 72 Deep green SEL6414E-TG Tinted green Yellow SEL4717Y Diffused yellow 2.0 2.5 14 20 570 Pure green SEL6514C Clear 2.0 2.5 12 20 555 GaP Green SEL4417G Diffused green 2.0 2.5 16 20 560 GaP Red SEL6215S Tinted red 1.9 2.5 45 20 630 GaAsP Red SEL1213C Tinted red 1.9 2.5 7.0 20 630 GaAsP Orange SEL6915A Tinted orange 1.9 2.5 60 20 587 GaAsP Amber SEL1813A Tinted orange 1.9 2.5 8.0 20 610 GaAsP Yellow SEL6715C Clear 2.0 2.5 90 20 570 GaP Orange SEL1913K Tinted light orange 1.9 2.5 8.0 20 587 GaAsP SEL6415E Tinted green 2.0 2.5 81 20 560 GaP Yellow SEL1713K Tinted yellow 2.0 2.5 15 20 570 GaP Pure green SEL6515C Clear 2.0 2.5 44 20 555 GaP Green SEL1413E Tinted green 2.0 2.5 12 20 560 GaP SEL2110S Tinted red 5.0 20 555 GaP SEL2110W Diffused white Highintensity red Red 2.0 2.5 1.8 Clear SEL2210S SEL2210R Diffused red SEL2210W Diffused white 15 SEL2810A Tinted orange 22 SEL2810D Diffused orange SEL2910A Tinted orange SEL2910D Diffused orange SELU2710C Clear SEL2710K Tinted yellow SEL2710Y Diffused yellow SEL2410E Tinted green SEL2410G Diffused green Yellow Green 10 700 GaP 1.8 Tinted red Orange Ultra highintensity yellow 4 SEL2610C Amber 12 Inverted-cone typ for surface illumination Deep red SEL2110R Diffused red 558 1.75 2.2 350 20 660 GaA As 40 1.9 1.9 2.5 15 2.5 20 10 630 610 GaAsP GaAsP 2.0 2.5 SEL6413E Tinted green 2.0 2.5 14 20 560 GaP Pure green SEL6513C Clear 2.0 2.5 5.0 20 555 GaP Tinted light red 1.7 2.5 80 20 660 GaA As SEL2213C Clear 1.9 2.5 7.0 20 630 GaAsP Pure green SEL1513E Green Highintensity red Red SEL2613CS-S Amber SEL2813A 1.9 2.5 8.0 20 610 GaAsP Orange SEL2913K Tinted light orange 1.9 2.5 8.0 20 587 GaAsP Yellow SEL2713K Tinted yellow 2.0 2.5 17 20 570 GaP 2.0 2.5 20 560 GaP GaP SEL2413E Tinted green SEL2413G Diffused green Green 16 1.9 2.5 10 587 GaAsP 8.0 2.0 2.5 270 20 572 A GaInP 40 2.0 2.5 10 570 GaP 14 77 2.0 2.5 20 20 560 GaP 16 18 Tinted orange 9.0 15 17 Tinted light green 13 35 Rectangular Green 18 13 45 SEL2915D 18 GaP 3.3 Tinted orange 9.6 555 3.3 Yellow 20 20 8.2 Diffused orange 42 2.5 2.5 SEL2915A 30 2.0 2.0 Clear Orange 90 typ 43 Clear Amber 11 typ IF (mA) SELU2E10C GaAsP 11 max Chip material SELU2D10C Red 1.9 IV p (mcd) Condition (nm) VF (V) Fig. No. Outline Blue 10 22 Tinted orange Tinted green Ultra highintensity pure green Ultra highintensity blue GaAsP 9.6 SEL6814A SEL6414E 630 22 1.9 Amber SEL6714W 20 SEL2510C Pure green GaP 18 2.5 Green 700 41 1.9 1.9 Diffused white 10 Part No. Lens color typ 2.6 Tinted red Yellow 3 Round 2.0 SEL6214S Orange typ 3.9 Red Ultra-highintensiti light amber 120 Diffused green typ IF (mA) 3 Round SEL6110R Deep red max 3 Cylindrical Tinted red Emitting color Contact mount typ SEL6110S Chip material Electro-optical characteristics (Ta=25C) 2 Round Part No. IV p (mcd) Condition (nm) VF (V) Lens color Fig. No. Outline Electro-optical characteristics (Ta=25C) Emitting color Contact mount Uni-Color LED Lamp 19 14 12 Pure green SEL2513E Tinted green 2.0 2.5 5.0 20 555 Deep red SEL1121R Diffused red 2.0 2.5 0.9 10 700 GaP Amber SEL1821D Diffused orange 1.9 2.5 3.0 10 610 GaAsP Orange SEL1921D Diffused orange 1.9 2.5 3.8 10 587 GaAsP Yellow SEL1721Y Diffused yellow 2.0 2.5 7.0 10 570 GaP Green SEL1421G Diffused green 2.0 2.5 12 20 560 GaP 20 General-purpose LEDs 20 660 GaA As SEL4228C Clear 1.9 2.5 27 20 630 GaAsP 630 GaAsP Highintensity red Amber SEL1822D Diffused orange 1.9 2.5 4.8 10 610 GaAsP Red SEL1922D Diffused orange SEL1722Y Diffused yellow SEL1722K Tinted yellow SEL1422G Diffused green 2.0 2.5 7.2 20 560 GaP Deep red SEL1120R Diffused red 2.0 2.5 0.9 10 700 GaP 4.5 10 587 GaAsP 2.0 10 2.5 570 SEL1220R 1.9 2.5 4.8 20 630 GaAsP SEL1820D Diffused orange 1.9 2.5 3.0 10 610 GaAsP Orange SEL1920D Diffused orange 1.9 2.5 3.8 10 587 GaAsP Yellow SEL1720Y Diffused yellow 2.0 2.5 7.0 10 570 GaP Green SEL1420G Diffused green 2.0 2.5 11 20 560 GaP Deep red SEL1124R Diffused red 2.0 2.5 0.5 10 700 Amber SEL1824D Diffused orange 1.9 2.5 4.0 10 Orange SEL1924D Diffused orange 1.9 2.5 3.0 10 Yellow SEL1724Y Diffused yellow 2.0 2.5 6.0 10 570 GaP Green SEL1424G Diffused green 2.0 2.5 15 20 560 GaP SEL4825A Tinted orange SEL4825D Diffused orange SEL4925A Tinted orange SEL4925D Diffused orange SEL4725K Tinted yellow SEL4725Y Diffused yellow SEL4425E Tinted green SEL4425G Diffused green Orange Yellow Green Pure green SEL4525C Clear SEL4226C Clear SEL4226R Diffused red SEL4826A Tinted orange Red Amber SEL4826D Diffused orange SEL4926A Tinted orange SEL4926D Diffused orange Orange SEL4726K Tinted yellow SEL4726Y Diffused yellow SEL4426E Tinted green Yellow Green 14 10 610 GaAsP 1.9 2.5 14 10 587 GaAsP Yellow SEL4728K Tinted yellow 2.0 2.5 30 10 570 GaP Green SEL4428E Tinted green 2.0 2.5 63 20 560 GaP Tinted dark blue 2.0 2.5 18 20 558 GaP Deep green SEL4428B-TG Pure green SEL4528C 2.0 2.5 30 20 555 GaP 1.9 2.5 21 20 630 GaAsP Amber SEL4829A Tinted orange 1.9 2.5 18 10 610 GaAsP Orange SEL4929A Tinted orange 1.9 2.5 18 10 587 GaAsP Yellow SEL4729KH Tinted yellow 2.0 2.5 60 10 570 GaP GaP Green SEL4429E Tinted green 2.0 2.5 60 20 560 GaP 610 GaAsP Highintensity red SEL5620C Clear 1.7 2.2 100 20 660 GaA As 587 GaAsP Red SEL5220S Tinted red 1.9 2.5 20 20 630 GaAsP Amber SEL5820A Tinted orange 1.9 2.5 12 20 610 GaAsP Orange SEL5920A Tinted orange 1.9 2.5 12 20 587 GaAsP SEL5420E Tinted green 2.0 2.5 20 20 560 GaP Pure green SEL5520C Clear 2.0 2.5 6.0 20 555 GaP Ultra highintensity blue SELU5E20C Clear 3.3 4.0 60 10 470 InGaN Red SEL5221S Tinted red 1.9 2.5 35 20 630 GaAsP Amber SEL5821A Tinted orange 1.9 2.5 60 20 610 GaAsP Orange SEL5921A Tinted orange 1.9 2.5 60 20 587 GaAsP Yellow SEL5721C Clear 2.0 2.5 90 20 570 GaP Green SEL5421E Tinted green 2.0 2.5 95 20 560 GaP Pure green SEL5521C Clear 2.0 2.5 35 20 555 GaP Ultra highintensity red SELS5223C Clear 2.0 2.5 100 20 635 A GaInP SEL5223S Tinted red 1.9 2.5 25 20 630 GaAsP SELS5823C Clear 20 615 A GaInP SELU5823C Clear 3.1 Clear 22 23 12 1.9 20 2.5 630 GaAsP 5.4 5.4 1.9 10 2.5 610 GaAsP 4.0 4.5 1.9 10 2.5 587 GaAsP 4.0 24 13 2.0 10 2.5 570 GaP 5.0 20 2.0 20 2.5 560 GaP 10 2.0 2.5 6.6 20 555 GaP 20 2.5 630 Ultra highintensity amber GaAsP 10 5.4 1.9 10 2.5 610 GaAsP 4.5 6.0 1.9 10 2.5 587 GaAsP 25 4.5 14 2.0 10 2.5 570 GaP 8.6 20 2.0 2.5 20 560 GaP SEL4426G SEL4227C Clear 1.9 2.5 15 20 630 GaAsP Green SEL4427EP Tinted green 2.0 2.5 19 20 560 GaP Red SEL6227S Tinted red 1.9 2.5 14 20 630 GaAsP Orange SEL6927A Tinted orange 1.9 2.5 10 10 587 GaAsP SEL6427EP Tinted green 2.0 2.5 26 20 560 GaP Green Red 12 1.9 28 Diffused red Red 4 2.5 Tinted orange SEL4229R Diffused green Green 1.9 SEL4928A Red 5mm Pitch lead rectangular Clear Diffused red Bow-shaped Red Amber SEL4225R SEL4828A Orange GaP 12 Diffused red SEL4225C Amber Tinted orange 21 7.8 5mm Pitch lead 3 lens-type Yellow 2.5 typ 14 26 2.5 185 1.9 2.5 35 20 610 GaAsP SELS5B23C Clear 2.0 2.5 135 20 600 A GaInP Ultra highintensity orange SELS5923C Clear 2.0 2.5 145 20 590 A GaInP SEL5923A Tinted orange 1.9 2.5 35 20 587 GaAsP SELU5723C Clear 2.0 2.5 155 20 572 A GaInP Yellow SEL5723C Clear 2.0 2.5 60 20 570 GaP Green SEL5423E Tinted green 2.0 2.5 40 20 560 GaP Pure green SEL5523C Clear 2.0 2.5 13 20 555 GaP Ultra highintensity blue Clear 3.6 4.0 110 10 470 InGaN SEL5E23C Clear 4.0 4.8 20 20 430 GaN Red SEL5255S Tinted red 1.9 2.5 35 20 630 GaAsP Orange SEL5955A Tinted orange 1.9 2.5 25 20 587 GaAsP Yellow SEL5755C Clear 2.0 2.5 140 20 570 GaP Blue 27 2.0 Tinted orange Ultra highintensity yellow SELU5E23C 30 130 SEL5823A Orange 29 31 Ultra-highintensiti light amber Amber Fig. No. 200 20 Chip material Contact mount Outline Fig. No. 2.2 9.0 5mm Pitch lead bow-shaped 25 Rectangular typ IF (mA) 1.7 2.5 Amber 24 Rectangular max Clear max 1.9 Red Bow-shaped typ SEL4628C-S typ Diffused red 1.9 typ IV p (mcd) Condition (nm) VF (V) Part No. Lens color SEL1222R Orange typ IF (mA) Chip material Electro-optical characteristics (Ta=25C) Emitting color Red Green 15 Rectangular Part No. IV p (mcd) Condition (nm) VF (V) Lens color 5mm Pitch lead egg-shaped 2.55 Rectangular Outline Electro-optical characteristics (Ta=25C) Emitting color Contact mount Uni-Color LED Lamp 32 33 121 General-purpose LEDs Bi-Color LED Lamp Absolute Maximum Ratings (Ta=25C) Internal wiring diagram Conditions mA 30 mA/C -0.45 Above 25C I FP mA 100 f=1kHz, tw=100s VR V 4 Top C -30 to +85 Tstg C -30 to +100 A Deep red SML11516C A Red SML1216C A Red SML1216W Diffused white B Green A Deep red SML1516W 5 Round B Pure green A Highintensity red A Highintensity red B Yellow A Amber SML1816W B Green A Orange SML19416W B Green A Red SML12451W B Green A Highintensity red B Yellow A 2.55 Rectangular Diffused white 2.0 2.5 15 20 700 2.0 2.5 50 20 555 1.9 2.5 65 20 630 2.5 90 20 560 1.9 2.5 60 20 630 Diffused white Diffused white Diffused white Diffused white 2.5 60 20 560 2.0 2.5 6.0 20 700 2.5 20 20 2.2 100 20 Diffused white 3.0 140 20 570 1.7 2.2 50 20 660 2.4 3.0 70 20 570 1.9 2.5 50 20 610 2.0 2.5 60 20 560 A Orange 1.9 2.5 45 20 587 2.0 2.5 60 20 560 1.9 2.5 40 20 630 2.0 2.5 60 20 560 1.7 2.2 50 20 Red B Green A Amber 3.0 60 20 570 1.9 2.5 10 20 630 A Orange 2.0 2.5 25 20 560 1.7 2.2 30 20 660 2.4 3.0 40 20 570 1.9 2.5 15 20 587 2.0 2.5 25 20 560 1.9 2.5 15 20 630 2.0 2.5 20 20 560 1.9 2.5 10 20 610 2.0 2.5 20 20 560 1.9 2.5 10 20 587 2.0 2.5 20 20 560 Anode 36 Cathode Cathode Cathode Clear B Green A Orange SML79455C Cathode 37 1.9 2.5 25 20 630 2.0 2.5 35 20 560 1.9 2.5 25 20 630 1.9 2.5 25 20 587 1.9 2.5 25 20 610 2.0 2.5 35 20 560 1.9 2.5 25 20 587 2.0 2.5 35 20 560 2.0 2.5 150 20 590 2.0 2.5 40 20 570 1.9 2.5 45 20 630 2.0 2.5 75 20 570 1.9 2.5 40 20 587 2.0 2.5 45 20 630 1.9 2.5 45 20 587 2.0 2.5 75 20 560 A Highintensity red 1.7 2.2 50 20 660 2.4 3.0 50 20 570 highA Ultra intensity red highB Ultra intensity yellow 2.0 2.5 160 20 635 2.0 2.5 170 20 572 highA Ultra intensity amber highB Ultra intensity yellow 2.0 2.5 280 20 615 2.0 2.5 170 20 572 Common Cathode Cathode Cathode 38 Cathode Cathode Cathode Cathode Clear B Green SMLU78755C typ Clear Red Cathode 39 Diffused white B Yellow Cathode Clear B Green SML79420C A Orange SMLU72755C IF (mA) Clear B SML76755WN typ Clear Red SML79255C Anode Clear SML78420C A 660 2.4 highA Ultra intensity orange B Yellow Cathode max Clear SML72755C Cathode Clear SML72420C A Orange SML79423C B Yellow Cathode typ Clear B Green SMLS79723C Anode Clear B Yellow SML19460C A Amber B Green Anode p (nm) Clear SML78423C 660 2.4 Red B Orange 555 IV (mcd) Condition VF (V) Clear A Cathode 2.0 Red SML72923C 35 B Green A Highintensity red A B Green Cathode 2.0 Part No. Emitting Lens color color SML72423C Cathode 2.0 3 Electro-optical characteristics (Ta=25C) Cathode Clear A 3.36 Rectangular typ 1.7 B Green 122 IF (mA) Clear Red SML12460C SML16760CN typ Common B 2 34 B Yellow SML16751WN max Clear B Green SML16716WN typ Clear B Pure green SML16716CN p (nm) Outline Part No. IV (mcd) Condition VF (V) Egg-shaped Outline Electro-optical characteristics (Ta=25C) Emitting Lens color color Contact mount A 1 Fig. No. IF I F Contact mount Ratings 3.36 Bow-shaped Unit Fig. No. Parameter Anode Clear Cathode Clear Cathode General-purpose LEDs Surface Mount LED Absolute Maximum Ratings (Ta=25C) Internal wiring diagram Ratings Parameter Unit IF mA 30 I F mA/C -0.45 Above 25C I FP mA 70 f=1kHz, tw=100s GaP GaAsP GaA As A GaInP InGaN Conditions GaN VR V 4 5 Top C -30 to +85 -25 to +85 Tstg C 1 2 B A 4 3 -30 to +100 Uni-Color Bi-Color (mcd) Condition p (nm) Chip material typ max typ IF (mA) typ Deep red SEC1101C Clear 2.0 2.5 1.5 20 700 GaP Highintensity red SEC1601C Clear 1.7 2.2 100 20 660 GaA As Red SEC1201C Clear 2.5 10 20 630 GaAsP Outline Part No. IV VF (V) Lens color Fig. No. Outline Emitting color Emitting color Part No. typ IF (mA) typ 2.5 10 20 630 2.0 2.5 20 20 560 2.0 2.5 20 20 560 2.0 2.5 20 20 560 1.7 2.2 20 20 660 Green 2.0 2.5 20 20 560 A Orange 1.9 2.5 10 20 587 2.0 2.5 20 20 560 2.0 2.5 5.0 20 555 2.0 2.5 5.0 20 555 1.9 2.5 10 20 587 2.0 2.5 5.0 20 555 B Green Clear A Green SEC1801C Clear 1.9 2.5 16 20 610 GaAsP B SEC1901C Clear 1.9 2.5 13 20 587 GaAsP A Highintensity red 2.0 2.5 25 20 570 GaP SEC1401C Clear 2.0 2.5 22 20 560 GaP Deep reen SEC1401E-TG Tinted green 2.0 2.5 Pure green SEC1501C Clear 2.0 Ultra highintensity pure green Ultra highintensity blue SECU1D01C Clear 3.3 40 11 20 558 2.5 8.0 20 555 GaP 4.0 150 20 525 InGaN GaP Flat lens type SEC1701C-YG Clear B Green SEC2492C Clear 42 Clear B Green A Pure green SEC2552C Clear B Pure green SECU1E01C Clear 3.3 4.0 50 20 470 InGaN Blue SEC1E01C Clear 3.9 4.8 6.0 20 430 GaN B Pure green Highintensity red Ultra highintensity red SEC1603C Clear 1.7 2.2 150 20 660 GaA As A Highintensity red 1.7 2.2 20 20 660 SECS1203C Clear 1.9 2.5 100 20 635 A GaInP B Yellow 2.0 2.5 20 20 570 Red SEC1203C Clear 1.9 2.5 15 20 630 GaAsP A Amber 1.9 2.5 20 20 610 2.0 2.5 30 20 560 2.0 2.5 10 20 555 B Pure green 2.0 2.5 10 20 555 A Orange 1.9 2.5 20 20 587 2.0 2.5 30 20 560 1.7 2.2 50 20 660 2.0 2.5 50 20 570 2.0 2.5 50 20 570 2.0 2.5 50 20 570 A Orange SEC2592C SEC2762C-YG SELS1803C Clear 1.9 2.5 10 3 615 A GaInP Amber SEC1803C Clear 1.9 2.5 20 20 610 GaAsP Ultra highintensity orange SELS1903C Clear 1.9 2.5 10 3 590 Orange SEC1903C Clear 1.9 2.5 15 20 587 GaAsP Yellow SEC1703C Clear 2.0 2.5 35 20 570 GaP Green SEC1403C Clear 2.0 2.5 33 20 560 GaP Green A Pure green SEC2554C A GaInP 41 Deep green SEC1403E-TG SEC1503C Clear 2.0 2.5 15 20 558 GaP Clear 2.0 2.5 10 20 555 GaP Clear Clear B Clear SEC2494C 43 Clear B SEC2764C Pure green Clear SEC2484C Ultra highintensity amber Inner lens type Flat lens type Inner lens type Clear Amber Green p (nm) max Orange Yellow Condition 1.9 Red SEC2442C SEC2462C (mcd) typ A SEC2422C 1.9 IV VF (V) Lens color Fig. No. Electro-optical characteristics (Ta=25C) Electro-optical characteristics (Ta=25C) Green A Highintensity red B Yellow A Yellow B Yellow SEC2774C Clear Clear 123 General-purpose LEDs Infrared LED Absolute Maximum Ratings Unit Ratings Ratings mA 150 mA/C -1.33 Above 25C I FP mA 1000 f=1kHz, tw=10s VR V 5 Top C -30 to +85 Tstg C -30 to +100 Outline Electro-optical characteristics (Ta=25C) Part No. Ie VF (V) Lens color (mW/sr) Condition p (nm) Chip material typ max typ SID1010CM Clear 1.3 1.5 130 940 typ GaAs SID1K10CM Clear 1.3 1.5 200 940 GaAs SID1010CXM Clear 1.3 1.5 60 940 GaAs SID1K10CXM Clear 1.3 1.5 110 940 GaAs SID1050CM Clear 1.3 1.5 250 940 GaAs SID303C Clear 1.3 1.5 80 940 GaAs SID313BP Transparent light purpl 1.3 1.5 130 940 GaAs SID1003BQ Transparent light navy blue 1.3 1.5 180 940 GaAs SID307BR Transparent dark navy blue 1.3 1.5 200 940 GaAs SID1G307C Clear 1.5 1.8 50 850 GaAs SID2010C Clear 1.3 1.5 7.0 940 GaAs SID2K10C Clear 1.3 1.5 14 940 GaAs Contact mount IF I F Fig. No. Parameter (Ta=25C) 3 Round 5 Round 44 124 (Constant voltage) VCC=3V, R=2.2 IF=50mA 45 46 47 General-purpose LEDs - External Dimensions (Unit: mm) 20.0min 5.00.5 19.0min 0.8 Fig. 6 7.60.2 5.60.2 20.0min 5.00.5 (1.0) Cathode 5.00.2 4.60.2 7.70.5 23.5min 0.1 0.65max 0.5 Resin heap 1.5max Fig. 3 5.60.2 0.50.1 2-0.5 Anode 1.0min (2.54) 0.50.1 Resin burr 0.3max 5.70.2 (1.0) 7.60.2 Resin heap 1.5max (2.54) 23.0min 5.00.2 1.0min Resin heap 1.5max 4.70.2 0.50.1 0.1 Cathode Fig. 7 0.8 (2.54) 5.00.2 1.1max 0.8 (2.54) 0.5 0.5 Resin heap 1.5max Fig. 2 5.60.2 (1.0) Cathode Cathode 0.5 7.90.2 19.0min 0.8 1.1max 5.60.2 0.65max Fig. 1 Fig. 8 0.8 Resin heap 1.5max 0.450.1 0.40.1 Fig. 4 0.5 1.5 4.00.2 6.5 Cathode 4.8 0.65max 0.50.1 0.50.1 5.00.2 25.5min 2.2 (2.54) Cathode 1.0min Resin heap 1.5max 1.1max (1.0) 6.90.2 23.0min (2.54) 1.0min 5.00.2 5.60.2 Fig. 9 Resin heap 0.8max 1.0min 0.40.1 Cathode Fig. 5 0.65max 0.450.1 9.40.3 21.0min (2.54) 5.00.2 0.65 max (2.54) 1.0min (1.5) 2.2 Cathode 5.00.2 24.5min 4.00.2 Resin burr 0.3max 0.50.1 0.50.1 4.8 Anode Resin heap 0.8max Fig. 10 0.8 1.1max 0.5 0.50.1 Resin heap 1.5max 23.0min (1.7) Cathode 0.40.1 5.50.5 3.50.1 4.4 4.00.2 (2.54) 5.00.2 Cathode 1.0min 3.10.1 3.5 0.65max 8.2 (1.0) 0.450.1 19.0min 0.8 0.2 (2.54) 20.0min 5.5 0.5 0.80.2 5.6 0.2 Resin heap 0.8max 125 General-purpose LEDs - External Dimensions (Unit: mm) Fig. 16 8.00.2 23.0min 1.0min (1.5) 4.00.1 4.00.2 0.450.1 0.65max (2.54) Cathode 0.65max 0.450.1 4.4 3.5 (2.54) 4.00.2 Cathode Resin heap 0.8max Resin heap 1.5max C1.0 0.40.1 0.40.1 2.50.2 2.00.1 23.0min 4.50.5 (1.6) 2.50.1 1.0min 0.80.2 3.5 4.40.2 Fig. 11 Fig. 17 20.0min 5.00.5 5.80.2 (1.0) 4.90.2 Cathode 19.0min 0.8 0.5 Resin heap 0.8max 0.8 0.50.1 0.65max 0.450.1 0.40.1 5.60.2 0.1 (2.54) 3.5 (2.54) 4.00.2 Cathode 5.5 4.4 0.80.2 23.0min (1.7) Resin burr 0.3max 3.10.1 1.0min 3.5 1.1max Fig. 12 Resin heap 1.5max Cathode mark Fig. 13 Fig. 18 3.50.1 Cathode Resin burr 0.3max Resin heap 0.8max Fig. 15 3.10.1 (2.54) 0.4 0.4 0.1 0.65max Resin heap 1.5max 2.60.1 25.8min (1.3) 0.450.1 0.65max 0.450.1 (2.54) 3.8 0.40.1 Cathode Cathode 1.0min 1.7 3.80.1 4.00.1 (1.3) 25.4min 3.10.1 Fig. 19 1.55 1.0min Resin burr 0.3max Resin heap 1.5max Fig. 20 (1.3) 3.8 0.2 6.0 0.2 (2.0) 0.8 0.8 1.1max Resin burr 0.3max 3.0 0.5 0.1 Resin heap 1.5max 0.2 Cathode 0.5 0.1 (2.54) Resin heap 1.5max 1.5 0.2 0.65max 0.450.1 3.8 0.40.1 6.0 0.5 20.0min 1.0min (2.54) 1.7 4.20.1 5.0 0.2 25.8min Cathode mark 1.0min 3.10.1 Cathode 126 0.65max 0.40.1 0.450.1 0.65max 0.450.1 Resin heap 1.5max Fig. 14 4.5 (1.7) 2.50.1 4.4 (2.54) 3.8 0.4 23.0min (2.54) (1.3) 1.7 1.0min 3.5 0.80.2 3.5 4.00.2 25.8min 3.10.1 Cathode 1.0min 0.1 General-purpose LEDs - External Dimensions (Unit: mm) 0.40.1 1.0min Resin burr 0.3max Resin heap 0.8max 3.6 4.20.5 6.00.2 23.0min (5.0) Cathode 7.0 0.2 2.00.2 0.4 0.1 21.0min 2.00.2 4.2 0.40.1 1.4 6.2 (2.54) 4.3 1.0min Cathode 1.0min 3.0 2.4 Fig. 30 Resin burr 0.3max 4.0 0.2 0.65max 0.45 0.1 Resin heap 0.8max 2.3 (1.0) 0.65max 0.45 2.0 0.1 0.4 Fig. 25 8.00.2 (2.54) 0.2 5.0 0.2 23.0min 20.5min Cathode 4.0 (2.54) 1.0min 2.0 0.1 2.8 0.15 1.0 0.2 Fig. 29 Cathode 2.3 5.00.2 0.4 0.1 0.2 0.65max 0.45 0.1 Resin heap 0.8max 4.3 (2.54) 4.0 0.2 0.2 0.8 3.2 0.5 0.5 0.1 1.1max 0.1 4.9 (2.54) Fig. 24 Resin burr 0.3max Cathode 23.5min 1.0min Resin burr 0.3min Resin heap 1.5max Resin heap 0.8max 3.1 0.2 0.2 4.0 0.8 Cathode 4.00.2 0.45 0.1 0.8 0.2 4.00.2 4.4 Fig. 28 8.5 4.5 0.50.1 Cathode mark Resin burr 0.3max Resin heap 0.8max 3.30.2 0.5 3.10.2 3.50.2 4.5 0.65max 19.0min 4.60.2 4.9 23.0min 1.0min 0.45 0.1 1.0min 2.1 0.4 0.1 2.0 0.1 0.2 6.0 Cathode mark 0.2 6.0 0.5 Fig. 23 4.0 0.2 0.2 5.0 (2.54) Cathode (2.0) 0.5 20.0min Resin burr 0.3max 0.65max 1.1max 0.8 0.5 Resin burr 0.3max Cathode 1.0min Resin heap 0.8max Fig. 27 Resin heap 1.5max (2.54) 0.2 2.8 0.1 Fig. 22 2.00.1 Resin heap 0.8max 0.50.1 0.5 0.1 Cathode 3.00.15 1.1max 0.8 (2.54) 5.00.2 2.5 5.00.2 23.0min 0.15 0.65max (1.0) 19.0min 0.8 Cathode Fig. 26 1.0min 4.00.2 0.65max 9.00.2 0.450.1 20.0min 5.00.5 (2.54) Fig. 21 127 General-purpose LEDs - External Dimensions (Unit: mm) 0.50.1 3.00.2 0.50.1 2.50.2 5.00.2 5.2 Cathode mark Resin burr 0.3max Resin heap 0.8max 7.00.5 0.8 1.2 (2.0) 5.00.2 2.8 3.20.2 Cathode 0.65max 0.5+0.1 1.4 6.2 (5.0) 6.00.2 3.9 3.6 1.5min 1.0min 17.0min Fig. 36 5.80.5 23.0min 3 - 0.50.1 3 - 0.50.1 0.65max 1.0min (2.54) (2.54) Fig. 31 Resin burr 0.3max Resin heap 1.5max Fig. 37 Fig. 32 1.0min 1.0min 1.5min 5.80.5 23.0min 20.0min 3.9 Resin burr 0.3max Resin heap 1.5max 0.50.1 3.3 3.1 0.5 3.6 0.65max 0.1 6.00.2 (2.54) (2.54) 6.2 Cathode mark Resin burr 0.3max Resin heap 0.8max 0.5+0.1 Cathode 3.6 0.65max 0.5+0.1 1.4 6.2 (5.0) 3.60.2 6.00.2 3.9 Fig. 38 7.30.5 Resin burr 0.3max Resin heap 1.5max 3.10.2 4.550.2 0.50.1 3.6 0.65max 3.60.2 (2.54) (2.54) 5.60.2 Resin burr 0.3max Resin heap 0.8max 0.65max 0.50.1 0.50.1 (5.0) 6.20.2 4.650.2 5.80.5 3.9 1.0min 1.5min 20.0min (0.3) Cathode 0.50.1 23.0min 6.2 1.0min 6.00.2 Fig. 33 Fig. 39 10.60.5 5.60.2 Reisin burr 0.3max Reisin heap 0.8max 4.550.2 0.8 0.65max 0.50.1 4.650.2 1.2 7.30.5 (0.3) 20.0min 0.1 Resin burr 0.3max Resin heap 1.5max 0.65max 3 - 0.50.1 1.0min 1.5min (2.54) (2.54) 1.0 7.6 0.2 6.20.2 2.0 (2.54) (2.54) 5.80.2 0.5 0.5 5.00.2 1.0min 1.5min 17.0min 0.1 0.5 Fig. 34 Fig. 40 Fig. 35 11.60.5 1.0min 1.5min 17.0min 0.50.1 9.60.2 1.5 0.8 1.2 Cathode mark 1.4 0.9 (0.5) 1.3 Cathode 1.6 1.5 2.0 3.0 Resin burr 0.3max Resin heap1.5max 0.6 5.00.2 0.65max 3 - 0.50.1 3 - 0.50.1 (2.54) (2.54) 128 (2.0) P.C.B. Resin Anode General-purpose LEDs - External Dimensions (Unit: mm) 0.50.1 1.0min 21.0min Anode 0.50.1 Fig. 46 A Anode 0.60.1 Cathode 1 2 4 3 3.50.1 3.10.1 (1.3) 0.450.1 0.65max P.C.B. 1.8 B 25.8min 0.40.1 Resin 1.0min 1.7 o3.8 1.0 1.0 1.5 2.0 3.0 0.8 Cathode 0.4 Anode Lens Fig. 47 (2.54) 1.40.1 Cathode (0.5) 0.9 0.60.1 0.9 mark Cathode 2.5 1.5 Resin heap 1.5max 0.60.1 3 Fig. 43 Resin burr 0.3max P.C.B. A 4 1.1max 0.85+0.1 (2.54) 1.0 Resin 2 (0.8) 4.80.2 5.6 1.0 1.5 2.0 3.0 1 8.50.5 24.0min 2.0min Anode B Resin burr 0.3max Resin heap 0.8max Cathode 1.40.1 Cathode (0.5) 0.9 0.60.1 0.9 mark Cathode 2.5 1.5 5.00.2 (2.54) 1.6 1.0 1.7 2.0 3.0 Fig. 42 P.C.B. Anode Resin Lens 9.40.3 0.65 max Cathode (0.5) 0.6 1.4 0.9 1.3 0.60.1 Cathode mark 1.5 0.50.1 Fig. 45 Fig. 41 Resin burr 0.3max Resin heap 1.5max A 5.60.2 1.0min (1.0) 23.0min 0.65max Resin burr 0.3max Resin heap 1.5max 0.50.1 0.50.1 0.50.1 (2.54) Cathode A 5.00.2 Fig. 44 Dimension A (mm) SID303C 3.00.5 SID313BP SID1003BQ SID307BR SID1G307C 3.60.5 4.20.5 129 Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC (Subassembly) 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial) 111 2SA1568 Power transistor 68 AU01Z Fast-Recovery Rectifier Diode (Axial) 2SC3851 Power transistor 69 AU02 2SC3852 Power transistor 70 AU02Z 2SC4024 Power transistor 71 2SC4065 Power transistor 72 2SC4153 Power transistor 2SD2141 Power transistor 2SD2382 Part No. Classification Page 60 ES01F Fast-Recovery Rectifier Diode (Axial) 111 60 ES01Z Fast-Recovery Rectifier Diode (Axial) 111 EU 1 Fast-Recovery Rectifier Diode (Axial) 111 111 EU 1A Fast-Recovery Rectifier Diode (Axial) 111 Fast-Recovery Rectifier Diode (Axial) 111 EU 1Z Fast-Recovery Rectifier Diode (Axial) 111 Fast-Recovery Rectifier Diode (Axial) 111 EU 2 Fast-Recovery Rectifier Diode (Axial) 111 EG 1 Ultra-Fast-Recovery Rectifier Diode (Axial) 112 EU 2A Fast-Recovery Rectifier Diode (Axial) 111 EG 1A Ultra-Fast-Recovery Rectifier Diode (Axial) 112 EU 2YX Fast-Recovery Rectifier Diode (Axial) 111 73 EG 1Y Ultra-Fast-Recovery Rectifier Diode (Axial) 112 EU 2Z Fast-Recovery Rectifier Diode (Axial) 111 74 EG 1Z Ultra-Fast-Recovery Rectifier Diode (Axial) 112 EU01 Fast-Recovery Rectifier Diode (Axial) 111 Power transistor 75 EG01 Ultra-Fast-Recovery Rectifier Diode (Axial) 112 EU01A Fast-Recovery Rectifier Diode (Axial) 111 2SD2633 Power transistor 76 EG01A Ultra-Fast-Recovery Rectifier Diode (Axial) 112 EU01Z Fast-Recovery Rectifier Diode (Axial) 111 2SK2701 MOS FET 92 EG01C Ultra-Fast-Recovery Rectifier Diode (Axial) 112 EU02 Fast-Recovery Rectifier Diode (Axial) 111 A3121L* Hall-Effect IC (Unipolar Switch) 60 EG01Y Ultra-Fast-Recovery Rectifier Diode (Axial) 112 EU02A Fast-Recovery Rectifier Diode (Axial) 111 A3122L* Hall-Effect IC (Unipolar Switch) 60 EG01Z Ultra-Fast-Recovery Rectifier Diode (Axial) 112 EU02Z Fast-Recovery Rectifier Diode (Axial) 111 A3123L* Hall-Effect IC (Unipolar Switch) 60 EH 1 Fast-Recovery Rectifier Diode (Axial) 111 FKV460 MOS FET 93 A3134L* Hall-Effect IC (Bipolar Switch) 60 EH 1A Fast-Recovery Rectifier Diode (Axial) 111 FKV460S MOS FET 94 A3141L* Hall-Effect IC (Unipolar Switch) 60 EH 1Z Fast-Recovery Rectifier Diode (Axial) 111 FKV560 MOS FET 95 A3142L* Hall-Effect IC (Unipolar Switch) 60 EK 03 Schottky barrier Diode (Axial) 113 FKV560S MOS FET 96 A3143L* Hall-Effect IC (Unipolar Switch) 60 EK 04 Schottky barrier Diode (Axial) 113 FKV660 MOS FET 97 A3144L* Hall-Effect IC (Unipolar Switch) 60 EK 06 Schottky barrier Diode (Axial) 113 FKV660S MOS FET A3185L* Hall-Effect IC (Bipolar Latch) 60 EK 09 Schottky barrier Diode (Axial) 113 FMB-24 Schottky barrier Diode (Center-tap) 113 A3187L* Hall-Effect IC (Bipolar Latch) 60 EK 13 Schottky barrier Diode (Axial) 113 FMB-24H Schottky barrier Diode (Center-tap) 113 A3188L* Hall-Effect IC (Bipolar Latch) 60 EK 14 Schottky barrier Diode (Axial) 113 FMB-24L Schottky barrier Diode (Center-tap) 113 A3189L* Hall-Effect IC (Bipolar Latch) 60 EK 16 Schottky barrier Diode (Axial) 113 FMB-24M Schottky barrier Diode (Center-tap) 113 A3240L* Hall-Effect IC (Unipolar Switch) 60 EK 19 Schottky barrier Diode (Axial) 113 FMB-26 Schottky barrier Diode (Center-tap) 113 A3250L* Hall-Effect IC (Unipolar Switch) 60 EL 1 Ultra-Fast-Recovery Rectifier Diode (Axial) 112 FMB-26L Schottky barrier Diode (Center-tap) 113 A3280L* Hall-Effect IC (Bipolar Latch) 60 EL 1Z Ultra-Fast-Recovery Rectifier Diode (Axial) 112 FMB-29 Schottky barrier Diode (Center-tap) 113 A3281L* Hall-Effect IC (Bipolar Latch) 60 EL02Z Ultra-Fast-Recovery Rectifier Diode (Axial) 112 FMB-29L Schottky barrier Diode (Center-tap) 113 A3283L* Hall-Effect IC (Bipolar Latch) 60 EM 1 Rectifier Diode (Axial) 110 FMB-34 Schottky barrier Diode (Center-tap) 113 A3515LUA Hall-Effect IC (Linear Sensor) 60 EM 1A Rectifier Diode (Axial) 110 FMB-34M Schottky barrier Diode (Center-tap) 113 A3516LUA Hall-Effect IC (Linear Sensor) 60 EM 1B Rectifier Diode (Axial) 110 FMB-34S Schottky barrier Diode (Center-tap) 113 AG01 Ultra-Fast-Recovery Rectifier Diode (Axial) 112 EM 1C Rectifier Diode (Axial) 110 FMB-36 Schottky barrier Diode (Center-tap) 113 AG01A Ultra-Fast-Recovery Rectifier Diode (Axial) 112 EM 1Y Rectifier Diode (Axial) 110 FMB-36M Schottky barrier Diode (Center-tap) 113 AG01Y Ultra-Fast-Recovery Rectifier Diode (Axial) 112 EM 1Z Rectifier Diode (Axial) 110 FMB-39 Schottky barrier Diode (Center-tap) 113 AG01Z Ultra-Fast-Recovery Rectifier Diode (Axial) 112 EM 2 Rectifier Diode (Axial) 110 FMB-39M Schottky barrier Diode (Center-tap) 113 AK 03 Schottky barrier Diode (Axial) 113 EM 2A Rectifier Diode (Axial) 110 FMB-G14 Schottky barrier Diode (Frame 2-pin) 113 AK 04 Schottky barrier Diode (Axial) 113 EM 2B Rectifier Diode (Axial) 110 FMB-G14L Schottky barrier Diode (Frame 2-pin) 113 AK 06 Schottky barrier Diode (Axial) 113 EM01 Rectifier Diode (Axial) 110 FMB-G16L Schottky barrier Diode (Frame 2-pin) 113 AK 09 Schottky barrier Diode (Axial) 113 EM01A Rectifier Diode (Axial) 110 FMB-G19L Schottky barrier Diode (Frame 2-pin) 113 AL01Z Ultra-Fast-Recovery Rectifier Diode (Axial) 112 EM01Z Rectifier Diode (Axial) 110 FMB-G24H Schottky barrier Diode (Frame 2-pin) 113 AM01 Rectifier Diode (Axial) 110 EN 01Z Ultra-Fast-Recovery Rectifier Diode (Axial) 112 FMD-G26S Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin) 112 AM01A Rectifier Diode (Axial) 110 EP01C Ultra-Fast-Recovery Rectifier Diode (Axial) 112 FME-24H Schottky barrier Diode (Center-tap) 113 AM01Z Rectifier Diode (Axial) 110 ES 1 Fast-Recovery Rectifier Diode (Axial) 111 FME-24L Schottky barrier Diode (Center-tap) 113 AP01C Ultra-Fast-Recovery Rectifier Diode (Axial) 112 ES 1A Fast-Recovery Rectifier Diode (Axial) 111 FMG-12S,R Ultra-Fast-Recovery Rectifier Diode (Center-tap) 112 AS01 Fast-Recovery Rectifier Diode (Axial) 111 ES 1F Fast-Recovery Rectifier Diode (Axial) 111 FMG-13S,R Ultra-Fast-Recovery Rectifier Diode (Center-tap) 112 AS01A Fast-Recovery Rectifier Diode (Axial) 111 ES 1Z Fast-Recovery Rectifier Diode (Axial) 111 FMG-14S,R Ultra-Fast-Recovery Rectifier Diode (Center-tap) 112 AS01Z Fast-Recovery Rectifier Diode (Axial) 111 ES01 Fast-Recovery Rectifier Diode (Axial) 111 FMG-22S,R Ultra-Fast-Recovery Rectifier Diode (Center-tap) 112 ATS610LSA Hall-Effect IC (Subassembly) ES01A Fast-Recovery Rectifier Diode (Axial) 111 FMG-23S,R Ultra-Fast-Recovery Rectifier Diode (Center-tap) 112 60 98 Index by Part No. Part No. Classification Page Part No. Classification Page FMG-24S,R Ultra-Fast-Recovery Rectifier Diode (Center-tap) 112 MPE-24H Schottky barrier Diode (Center-tap) 113 FMG-26S,R Ultra-Fast-Recovery Rectifier Diode (Center-tap) 112 PZ 628 Power Zener Diode (Axial) FMG-32S,R Ultra-Fast-Recovery Rectifier Diode (Center-tap) 112 RBV-406B Schottky barrier Diode (Bridge) FMG-33S,R Ultra-Fast-Recovery Rectifier Diode (Center-tap) 112 RBV-602L FMG-34S,R Ultra-Fast-Recovery Rectifier Diode (Center-tap) 112 FMG-36S,R Ultra-Fast-Recovery Rectifier Diode (Center-tap) 112 FMG-G26S Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin) FMG-G2CS Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin) FMG-G36S FMG-G3CS Part No. Classification Page RL 4Z Ultra-Fast-Recovery Rectifier Diode (Axial) 112 109 RM 1 Rectifier Diode (Axial) 110 113 RM 10 Rectifier Diode (Axial) 110 Ultra-Fast-Recovery Rectifier Diode (Bridge) 112 RM 10A Rectifier Diode (Axial) 110 RC 2 Fast-Recovery Rectifier Diode (Axial) 111 RM 10B Rectifier Diode (Axial) 110 RF 1 Fast-Recovery Rectifier Diode (Axial) 111 RM 10Z Rectifier Diode (Axial) 110 112 RF 1A Fast-Recovery Rectifier Diode (Axial) 111 RM 11A Rectifier Diode (Axial) 110 112 RF 1B Fast-Recovery Rectifier Diode (Axial) 111 RM 11B Rectifier Diode (Axial) 110 Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin) 112 RF 1Z Fast-Recovery Rectifier Diode (Axial) 111 RM 11C Rectifier Diode (Axial) 110 Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin) 112 RG 10 Ultra-Fast-Recovery Rectifier Diode (Axial) 112 RM 1A Rectifier Diode (Axial) 110 FML-12S Ultra-Fast-Recovery Rectifier Diode (Center-tap) 112 RG 10A Ultra-Fast-Recovery Rectifier Diode (Axial) 112 RM 1B Rectifier Diode (Axial) 110 FML-13S Ultra-Fast-Recovery Rectifier Diode (Center-tap) 112 RG 10Y Ultra-Fast-Recovery Rectifier Diode (Axial) 112 RM 1C Rectifier Diode (Axial) 110 FML-14S Ultra-Fast-Recovery Rectifier Diode (Center-tap) 112 RG 10Z Ultra-Fast-Recovery Rectifier Diode (Axial) 112 RM 1Z Rectifier Diode (Axial) 110 FML-22S Ultra-Fast-Recovery Rectifier Diode (Center-tap) 112 RG 1C Ultra-Fast-Recovery Rectifier Diode (Axial) 112 RM 2 Rectifier Diode (Axial) 110 FML-23S Ultra-Fast-Recovery Rectifier Diode (Center-tap) 112 RG 2 Ultra-Fast-Recovery Rectifier Diode (Axial) 112 RM 2A Rectifier Diode (Axial) 110 FML-24S Ultra-Fast-Recovery Rectifier Diode (Center-tap) 112 RG 2A Ultra-Fast-Recovery Rectifier Diode (Axial) 112 RM 2B Rectifier Diode (Axial) 110 FML-32S Ultra-Fast-Recovery Rectifier Diode (Center-tap) 112 RG 2Y Ultra-Fast-Recovery Rectifier Diode (Axial) 112 RM 2C Rectifier Diode (Axial) 110 FML-33S Ultra-Fast-Recovery Rectifier Diode (Center-tap) 112 RG 2Z Ultra-Fast-Recovery Rectifier Diode (Axial) 112 RM 2Z Rectifier Diode (Axial) 110 FML-34S Ultra-Fast-Recovery Rectifier Diode (Center-tap) 112 RG 4 Ultra-Fast-Recovery Rectifier Diode (Axial) 112 RM 3 Rectifier Diode (Axial) 110 FML-36S Ultra-Fast-Recovery Rectifier Diode (Center-tap) 112 RG 4A Ultra-Fast-Recovery Rectifier Diode (Axial) 112 RM 3A Rectifier Diode (Axial) 110 FML-G12S Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin) 112 RG 4C Ultra-Fast-Recovery Rectifier Diode (Axial) 112 RM 3B Rectifier Diode (Axial) 110 FML-G13S Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin) 112 RG 4Y Ultra-Fast-Recovery Rectifier Diode (Axial) 112 RM 3C Rectifier Diode (Axial) 110 FML-G14S Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin) 112 RG 4Z Ultra-Fast-Recovery Rectifier Diode (Axial) 112 RM 4 Rectifier Diode (Axial) 110 FML-G16S Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin) 112 RH 1 Fast-Recovery Rectifier Diode (Axial) 111 RM 4A Rectifier Diode (Axial) 110 FML-G22S Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin) 112 RH 1A Fast-Recovery Rectifier Diode (Axial) 111 RM 4AM Rectifier Diode (Axial) 110 FML-G26S Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin) 112 RH 1B Fast-Recovery Rectifier Diode (Axial) 111 RM 4B Rectifier Diode (Axial) 110 FMM-22S,R Rectifier Diode (Center-tap) 110 RH 1C Fast-Recovery Rectifier Diode (Axial) 111 RM 4C Rectifier Diode (Axial) 110 FMM-24S,R Rectifier Diode (Center-tap) 110 RH 1Z Fast-Recovery Rectifier Diode (Axial) 111 RM 4Y Rectifier Diode (Axial) 110 FMM-26S,R Rectifier Diode (Center-tap) 110 RJ 43 Schottky barrier Diode (Axial) 113 RM 4Z Rectifier Diode (Axial) 110 FMM-31S,R Rectifier Diode (Center-tap) 110 RK 13 Schottky barrier Diode (Axial) 113 RN 1Z Ultra-Fast-Recovery Rectifier Diode (Axial) 112 FMM-32S,R Rectifier Diode (Center-tap) 110 RK 14 Schottky barrier Diode (Axial) 113 RN 2Z Ultra-Fast-Recovery Rectifier Diode (Axial) 112 FMM-34S,R Rectifier Diode (Center-tap) 110 RK 16 Schottky barrier Diode (Axial) 113 RN 3Z Ultra-Fast-Recovery Rectifier Diode (Axial) 112 FMM-36S,R Rectifier Diode (Center-tap) 110 RK 19 Schottky barrier Diode (Axial) 113 RN 4Z Ultra-Fast-Recovery Rectifier Diode (Axial) 112 FMN-G12S Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin) 112 RK 33 Schottky barrier Diode (Axial) 113 RO 2 Rectifier Diode (Axial) 110 FMN-G14S Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin) 112 RK 34 Schottky barrier Diode (Axial) 113 RO 2A Rectifier Diode (Axial) 110 FMN-G16S Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin) 112 RK 36 Schottky barrier Diode (Axial) 113 RO 2B Rectifier Diode (Axial) 110 FMP-G12S Ultra-Fast-Recovery Rectifier Diode (Frame 2-pin) 112 RK 39 Schottky barrier Diode (Axial) 113 RO 2C Rectifier Diode (Axial) 110 FMU-12S,R Fast-Recovery Rectifier Diode (Center-tap) 111 RK 43 Schottky barrier Diode (Axial) 113 RO 2Z Rectifier Diode (Axial) 110 FMU-14S,R Fast-Recovery Rectifier Diode (Center-tap) 111 RK 44 Schottky barrier Diode (Axial) 113 RP 1H Ultra-Fast-Recovery Rectifier Diode (Axial) 112 FMU-21S,R Fast-Recovery Rectifier Diode (Center-tap) 111 RK 46 Schottky barrier Diode (Axial) 113 RS 1A Fast-Recovery Rectifier Diode (Axial) 111 FMU-22S,R Fast-Recovery Rectifier Diode (Center-tap) 111 RK 49 Schottky barrier Diode (Axial) 113 RS 1B Fast-Recovery Rectifier Diode (Axial) 111 FMU-24S,R Fast-Recovery Rectifier Diode (Center-tap) 111 RL 10Z Ultra-Fast-Recovery Rectifier Diode (Axial) 112 RU 1 Fast-Recovery Rectifier Diode (Axial) 111 FMU-32S,R Fast-Recovery Rectifier Diode (Center-tap) 111 RL 2 Ultra-Fast-Recovery Rectifier Diode (Axial) 112 RU 1A Fast-Recovery Rectifier Diode (Axial) 111 FMU-34S,R Fast-Recovery Rectifier Diode (Center-tap) 111 RL 2A Ultra-Fast-Recovery Rectifier Diode (Axial) 112 RU 1B Fast-Recovery Rectifier Diode (Axial) 111 FMU-G2YXS Fast-Recovery Rectifier Diode (Frame 2-pin) 111 RL 2Z Ultra-Fast-Recovery Rectifier Diode (Axial) 112 RU 1C Fast-Recovery Rectifier Diode (Axial) 111 FN812 Power transistor 77 RL 3 Ultra-Fast-Recovery Rectifier Diode (Axial) 112 RU 1P Ultra-Fast-Recovery Rectifier Diode (Axial) 112 FP812 Power transistor 78 RL 3A Ultra-Fast-Recovery Rectifier Diode (Axial) 112 RU 2 Fast-Recovery Rectifier Diode (Axial) 111 MN611S Power transistor 79 RL 3Z Ultra-Fast-Recovery Rectifier Diode (Axial) 112 RU 20A Fast-Recovery Rectifier Diode (Axial) 111 MN638S Power transistor 80 RL 4A Ultra-Fast-Recovery Rectifier Diode (Axial) 112 RU 2AM Fast-Recovery Rectifier Diode (Axial) 111 131 Index by Part No. Part No. 132 Classification Page Part No. RU 2B Fast-Recovery Rectifier Diode (Axial) 111 SEC1901C RU 2C Fast-Recovery Rectifier Diode (Axial) 111 RU 2M Fast-Recovery Rectifier Diode (Axial) 111 RU 2YX Fast-Recovery Rectifier Diode (Axial) RU 2Z RU 3 Classification Page Part No. Classification Page Flat Lens Orange Chip LED 123 SEL1510CM 5o Round Pure Green LED Lamp 119 SEC1903C Inner Lens Orange Chip LED 123 SEL1513E For Surface Illumination Pure Green LED Lamp 120 SEC1E01C Flat Lens GaN Blue Chip LED 123 SEL1550CM 5o Round Pure Green LED Lamp 119 111 SEC2422C Flat Lens Green / Red Bicolor Chip LED 123 SEL1610C 5o Round GaAlAs Red LED Lamp 119 Fast-Recovery Rectifier Diode (Axial) 111 SEC2442C Inner Lens Green / Red Bicolor Chip LED 123 SEL1610W 5o Round GaAlAs Red LED Lamp 119 Fast-Recovery Rectifier Diode (Axial) 111 SEC2462C Flat Lens Green / GaAlAs Red Bicolor Chip LED 123 SEL1615C 5o Round GaAlAs Red LED Lamp 119 RU 30 Fast-Recovery Rectifier Diode (Axial) 111 SEC2484C Inner Lens Green / Amber Bicolor Chip LED 123 SEL1710K 5o Round Yellow LED Lamp 119 RU 30A Fast-Recovery Rectifier Diode (Axial) 111 SEC2492C Flat Lens Green / Orange Bicolor Chip LED 123 SEL1710KM 5o Round Yellow LED Lamp 119 RU 30Y Fast-Recovery Rectifier Diode (Axial) 111 SEC2494C Inner Lens Green / Orange Bicolor Chip LED 123 SEL1710Y 5o Round Yellow LED Lamp 119 RU 30Z Fast-Recovery Rectifier Diode (Axial) 111 SEC2552C Flat Lens Green / Green Chip LED 123 SEL1711Y 5o Round Cylindrical Yellow LED Lamp 119 RU 31 Fast-Recovery Rectifier Diode (Axial) 111 SEC2554C Inner Lens Green / Green Chip LED 123 SEL1713K For Surface Illumination Yellow LED Lamp 120 RU 31A Fast-Recovery Rectifier Diode (Axial) 111 SEC2592C Flat Lens Pure Green / Orange Bicolor Chip LED 123 SEL1720Y 25 Rectangular Yellow LED Lamp 121 RU 3A Fast-Recovery Rectifier Diode (Axial) 111 SEC2762C-YG Flat Lens Yellow / GaAlAs Red Bicolor Chip LED 123 SEL1721Y 35 Rectangular Yellow LED Lamp 120 RU 3AM Fast-Recovery Rectifier Diode (Axial) 111 SEC2764C Inner Lens Yellow / GaAlAs Red Bicolor Chip LED 123 SEL1722K 2.55 Rectangular Yellow LED Lamp 121 RU 3B Fast-Recovery Rectifier Diode (Axial) 111 SEC2774C Inner Lens Yellow / Yellow Chip LED 123 SEL1722Y 2.55 Rectangular Yellow LED Lamp 121 RU 3C Fast-Recovery Rectifier Diode (Axial) 111 SECS1203C Flat Lens AlGaInP Red Chip LED 123 SEL1724Y 15 Rectangular Yellow LED Lamp 121 RU 3M Fast-Recovery Rectifier Diode (Axial) 111 SECU1D01C Flat Lens InGaN Pure Green Chip LED 123 SEL1810A 5o Round Amber LED Lamp 119 RU 3YX Fast-Recovery Rectifier Diode (Axial) 111 SECU1E01C Flat Lens InGaN Blue Chip LED 123 SEL1810AM 5o Round Amber LED Lamp 119 RU 4 Fast-Recovery Rectifier Diode (Axial) 111 SEL1110R 5o Round Deep Red LED Lamp 119 SEL1810D 5o Round Amber LED Lamp 119 RU 4A Fast-Recovery Rectifier Diode (Axial) 111 SEL1110S 5o Round Deep Red LED Lamp 119 SEL1810DM 5o Round Amber LED Lamp 119 RU 4AM Fast-Recovery Rectifier Diode (Axial) 111 SEL1110W 5o Round Deep Red LED Lamp 119 SEL1811D 5o Round Cylindrical Amber LED Lamp 119 RU 4B Fast-Recovery Rectifier Diode (Axial) 111 SEL1111R 5o Round Cylindrical Deep Red LED Lamp 119 SEL1813A For Surface Illumination Amber LED Lamp 120 RU 4C Fast-Recovery Rectifier Diode (Axial) 111 SEL1120R 25 Rectangular Deep Red LED Lamp 121 SEL1820D 25 Rectangular Amber LED Lamp 121 RU 4M Fast-Recovery Rectifier Diode (Axial) 111 SEL1121R 35 Rectangular Deep Red LED Lamp 120 SEL1821D 35 Rectangular Amber LED Lamp 120 RU 4Y Fast-Recovery Rectifier Diode (Axial) 111 SEL1124R 15 Rectangular Deep Red LED Lamp 121 SEL1822D 2.55 Rectangular Amber LED Lamp 121 RU 4YX Fast-Recovery Rectifier Diode (Axial) 111 SEL1210R 5o Round Red LED Lamp 119 SEL1824D 15 Rectangular Amber LED Lamp 121 RU 4Z Fast-Recovery Rectifier Diode (Axial) 111 SEL1210RM 5o Round Red LED Lamp 119 SEL1850AM 5o Round Amber LED Lamp 119 SDA03 Power transistor Array (Surface Mount) 88 SEL1210S 5o Round Red LED Lamp 119 SEL1850DM 5o Round Amber LED Lamp 119 SDA04 Power transistor Array (Surface Mount) 89 SEL1210SM 5o Round Red LED Lamp 119 SEL1910A 5o Round Orange LED Lamp 119 SDC09 Power transistor Array (Surface Mount) 90 SEL1211R 5o Round Cylindrical Red LED Lamp 119 SEL1910AM 5o Round Orange LED Lamp 119 SDH04 High-side Power Switch IC (Surface Mount 2-circuits) 26 SEL1213C For Surface Illumination Red LED Lamp 120 SEL1910D 5o Round Orange LED Lamp 119 SDK06 MOS FET Array (Surface mount) 103 SEL1220R 25 Rectangular Red LED Lamp 121 SEL1910DM 5o Round Orange LED Lamp 119 SDK08 MOS FET Array (Surface mount) 104 SEL1222R 2.55 Rectangular Red LED Lamp 121 SEL1911D 5o Round Cylindrical Orange LED Lamp 119 SDK09 MOS FET Array (Surface mount) 105 SEL1250RM 5o Round Red LED Lamp 119 SEL1913K For Surface Illumination Orange LED Lamp 120 SEC1101C Flat Lens Deep Red Chip LED 123 SEL1250SM 5o Round Red LED Lamp 119 SEL1920D 25 Rectangular Orange LED Lamp 121 SEC1201C Flat Lens Red Chip LED 123 SEL1410E 5o Round Green LED Lamp 119 SEL1921D 35 Rectangular Orange LED Lamp 120 SEC1203C Inner Lens Red Chip LED 123 SEL1410EM 5o Round Green LED Lamp 119 SEL1922D 2.55 Rectangular Orange LED Lamp 121 SEC1401C Flat Lens Green Chip LED 123 SEL1410G 5o Round Green LED Lamp 119 SEL1924D 15 Rectangular Orange LED Lamp 121 SEC1401E-TG Flat Lens Deep Green Chip LED 123 SEL1410GM 5o Round Green LED Lamp 119 SEL1950KM 5o Round Orange LED Lamp 119 SEC1403C Inner Lens Green Chip LED 123 SEL1411G 5o Round Cylindrical Green LED Lamp 119 SEL2110R 3o Round Deep Red LED Lamp 120 SEC1403E-TG Inner Lens Deep Green Chip LED 123 SEL1413E For Surface Illumination Green LED Lamp 120 SEL2110S 3o Round Deep Red LED Lamp 120 SEC1501C Flat Lens Pure Green Chip LED 123 SEL1420G 25 Rectangular Green LED Lamp 121 SEL2110W 3o Round Deep Red LED Lamp 120 SEC1503C Inner Lens Pure Green Chip LED 123 SEL1421G 35 Rectangular Green LED Lamp 120 SEL2111R 3o Round Cylindrical Deep Red LED Lamp 120 SEC1601C Flat Lens GaAlAs Red Chip LED 123 SEL1422G 2.55 Rectangular Green LED Lamp 121 SEL2210R 3o Round Red LED Lamp 120 SEC1603C Inner Lens GaAlAs Red Chip LED 123 SEL1424G 15 Rectangular Green LED Lamp 121 SEL2210S 3o Round Red LED Lamp 120 SEC1701C-YG Flat Lens Yellow Chip LED 123 SEL1450EKM 5o Round Green LED Lamp 119 SEL2210W 3o Round Red LED Lamp 120 SEC1703C Inner Lens Yellow Chip LED 123 SEL1450GM-YG 5o Round Green LED Lamp 119 SEL2213C For Surface Illumination Red LED Lamp 120 SEC1801C Flat Lens Amber Chip LED 123 SEL1453CEMKT 4.65.6o Egg-shaped Green LED Lamp 119 SEL2215R 3o Round Red LED Lamp 120 SEC1803C Inner Lens Amber Chip LED 123 SEL1510C 5o Round Pure Green LED Lamp 119 SEL2215S 3o Round Red LED Lamp 120 Index by Part No. Part No. Classification Page Part No. Classification Page Part No. SEL2410E 3o Round Green LED Lamp 120 SEL4414G 4o Round Green LED Lamp 119 SEL5221S SEL2410G 3o Round Green LED Lamp 120 SEL4417G 2o Round Green LED Lamp 120 SEL2411G 3o Round Cylindrical Green LED Lamp 120 SEL4425E 24 Rectangular Green LED Lamp 121 SEL2413E For Surface Illumination Green LED Lamp 120 SEL4425G 24 Rectangular Green LED Lamp SEL2413G For Surface Illumination Green LED Lamp 120 SEL4426E SEL2415E 3o Round Green LED Lamp 120 SEL4426G SEL2415G 3o Round Green LED Lamp 120 SEL2510C 3o Round Pure Green LED Lamp 120 SEL2510G 3o Round Pure Green LED Lamp SEL2513E For Surface Illumination Pure Green LED Lamp SEL2515C Classification Page 5mm Pitch Lead 3o Lens-type Red LED Lamp 121 SEL5223S 5mm Pitch Lead Bow-shaped Red LED Lamp 121 SEL5255S 5mm Pitch Lead Egg-shaped Red LED Lamp 121 121 SEL5420E 5mm Pitch Lead Rectangular Orange LED Lamp 121 24 Rectangular Green LED Lamp 121 SEL5421E 5mm Pitch Lead 3o Lens-type Green LED Lamp 121 24 Rectangular Green LED Lamp 121 SEL5423E 5mm Pitch Lead Bow-shaped Green LED Lamp 121 SEL4427EP 4o Bow-shaped Green LED Lamp 121 SEL5520C 5mm Pitch Lead Rectangular Pure Green LED Lamp 121 SEL4428B-TG 3.1o Bow-shaped Deep Green LED Lamp 121 SEL5521C 5mm Pitch Lead 3o Lens-type Pure Green LED Lamp 121 120 SEL4428E 3.1o Bow-shaped Green LED Lamp 121 SEL5523C 5mm Pitch Lead Bow-shaped Pure Green LED Lamp 121 120 SEL4429E 3.1o Bow-shaped Green LED Lamp 121 SEL5620C 5mm Pitch Lead Rectangular GaAlAs Red LED Lamp 121 3o Round Pure Green LED Lamp 120 SEL4510C 4o Round Pure Green LED Lamp 119 SEL5721C 5mm Pitch Lead 3o Lens-type Yellow LED Lamp 121 SEL2610C 3o Round GaAlAs Red LED Lamp 120 SEL4514C 4o Round Pure Green LED Lamp 119 SEL5723C 5mm Pitch Lead Bow-shaped Yellow LED Lamp 121 SEL2613CS-S For Surface Illumination GaAlAs Red LED Lamp 120 SEL4525C 24 Rectangular Pure Green LED Lamp 121 SEL5755C 5mm Pitch Lead Egg-shaped Yellow LED Lamp 121 SEL2710K 3o Round Yellow LED Lamp 120 SEL4528C 3.1o Bow-shaped Pure Green LED Lamp 121 SEL5820A 5mm Pitch Lead Rectangular Amber LED Lamp 121 SEL2710Y 3o Round Yellow LED Lamp 120 SEL4628C-S 3.1o Bow-shaped GaAlAs Red LED Lamp 121 SEL5821A 5mm Pitch Lead 3o Lens-type Amber LED Lamp 121 SEL2713K For Surface Illumination Yellow LED Lamp 120 SEL4710K 4o Round Yellow LED Lamp 119 SEL5823A 5mm Pitch Lead Bow-shaped Amber LED Lamp 121 SEL2715K 3o Round Yellow LED Lamp 120 SEL4710Y 4o Round Yellow LED Lamp 119 SEL5920A 5mm Pitch Lead Rectangular Orange LED Lamp 121 SEL2715Y 3o Round Yellow LED Lamp 120 SEL4714K 4o Round Yellow LED Lamp 119 SEL5921A 5mm Pitch Lead 3o Lens-type Orange LED Lamp 121 SEL2810A 3o Round Amber LED Lamp 120 SEL4714Y 4o Round Yellow LED Lamp 119 SEL5923A 5mm Pitch Lead Bow-shaped Orange LED Lamp 121 SEL2810D 3o Round Amber LED Lamp 120 SEL4717Y 2o Round Yellow LED Lamp 120 SEL5955A 5mm Pitch Lead Egg-shaped Orange LED Lamp 121 SEL2813A For Surface Illumination Amber LED Lamp 120 SEL4725K 24 Rectangular Yellow LED Lamp 121 SEL5E23C 5mm Pitch Lead Bow-shaped GaN Blue LED Lamp 121 SEL2815A 3o Round Amber LED Lamp 120 SEL4725Y 24 Rectangular Yellow LED Lamp 121 SEL6110R 3o Round Deep Red LED Lamp 120 SEL2815D 3o Round Amber LED Lamp 120 SEL4726K 24 Rectangular Yellow LED Lamp 121 SEL6110S 3o Round Deep Red LED Lamp 120 SEL2910A 3o Round Orange LED Lamp 120 SEL4726Y 24 Rectangular Yellow LED Lamp 121 SEL6210R 3o Round Red LED Lamp 120 SEL2910D 3o Round Orange LED Lamp 120 SEL4728K 3.1o Bow-shaped Yellow LED Lamp 121 SEL6210S 3o Round Red LED Lamp 120 SEL2911D 3o Round Cylindrical Orange LED Lamp 120 SEL4729KH 3.1o Bow-shaped Yellow LED Lamp 121 SEL6214S 3o Round Red LED Lamp 120 SEL2913K For Surface Illumination Orange LED Lamp 120 SEL4810A 4o Round amber LED Lamp 119 SEL6215S 3o Round Red LED Lamp 120 SEL2915A 3o Round Orange LED Lamp 120 SEL4810D 4o Round amber LED Lamp 119 SEL6227S 4o Bow-shaped Red LED Lamp 121 SEL2915D 3o Round Orange LED Lamp 120 SEL4814A 4o Round amber LED Lamp 119 SEL6410E 3o Round Green LED Lamp 120 SEL2E10C 3o Round GaN Blue LED Lamp 120 SEL4814D 4o Round amber LED Lamp 119 SEL6410G 3o Round Green LED Lamp 120 SEL4110R 4o Round Deep Red LED Lamp 119 SEL4817D 2o Round Amber LED Lamp 120 SEL6413E For Surface Illumination Green LED Lamp 120 SEL4110S 4o Round Deep Red LED Lamp 119 SEL4825A 24 Rectangular Amber LED Lamp 121 SEL6414E 3o Round Green LED Lamp 120 SEL4114R 4o Round Deep Red LED Lamp 119 SEL4825D 24 Rectangular Amber LED Lamp 121 SEL6414E-TG 3o Round Green LED Lamp 120 SEL4114S 4o Round Deep Red LED Lamp 119 SEL4826A 24 Rectangular Amber LED Lamp 121 SEL6415E 3o Round Green LED Lamp 120 SEL4117R 2o Round Deep Red LED Lamp 120 SEL4826D 24 Rectangular Amber LED Lamp 121 SEL6427EP 4o Bow-shaped Green LED Lamp 121 SEL4210R 4o Round Red LED Lamp 119 SEL4828A 3.1o Bow-shaped Amber LED Lamp 121 SEL6510C 3o Round Pure Green LED Lamp 120 SEL4210S 4o Round Red LED Lamp 119 SEL4829A 3.1o Bow-shaped Amber LED Lamp 121 SEL6510G 4o Round Pure Green LED Lamp 120 SEL4214R 4o Round Red LED Lamp 119 SEL4910A 4o Round Orange LED Lamp 119 SEL6513C For Surface Illumination GaAlAs Red LED Lamp 120 SEL4214S 4o Round Red LED Lamp 119 SEL4910D 4o Round Orange LED Lamp 119 SEL6514C 3o Round Pure Green LED Lamp 120 SEL4225C 24 Rectangular Red LED Lamp 121 SEL4914A 4o Round Orange LED Lamp 119 SEL6515C 3o Round Pure Green LED Lamp 120 SEL4225R 24 Rectangular Red LED Lamp 121 SEL4914D 4o Round Orange LED Lamp 119 SEL6710K 3o Round Yellow LED Lamp 120 SEL4226C 24 Rectangular Red LED Lamp 121 SEL4917D 2o Round Orange LED Lamp 120 SEL6710Y 3o Round Yellow LED Lamp 120 SEL4226R 24 Rectangular Red LED Lamp 121 SEL4925A 24 Rectangular Orange LED Lamp 121 SEL6714K 3o Round Yellow LED Lamp 120 SEL4227C 4o Bow-shaped Red LED Lamp 121 SEL4925D 24 Rectangular Orange LED Lamp 121 SEL6714W 3o Round Yellow LED Lamp 120 SEL4228C 3.1o Bow-shaped Red LED Lamp 121 SEL4926A 24 Rectangular Orange LED Lamp 121 SEL6715C 3o Round Yellow LED Lamp 120 SEL4229R 3.1o Bow-shaped Red LED Lamp 121 SEL4926D 24 Rectangular Orange LED Lamp 121 SEL6810A 3o Round Amber LED Lamp 120 SEL4410E 4o Round Green LED Lamp 119 SEL4928A 3.1o Bow-shaped Orange LED Lamp 121 SEL6810D 3o Round Amber LED Lamp 120 SEL4410G 4o Round Green LED Lamp 119 SEL4929A 3.1o Bow-shaped Orange LED Lamp 121 SEL6814A 3o Round Amber LED Lamp 120 SEL4414E 4o Round Green LED Lamp 119 SEL5220S 5mm Pitch Lead Rectangular Red LED Lamp 121 SEL6910A 3o Round Orange LED Lamp 120 133 Index by Part No. Part No. Page Part No. Classification Page Part No. Classification Page SEL6910D 3o Round Orange LED Lamp 120 SG-9CNS Rectifier Diode for Alternator 107 SML1816W 5o Round Amber / Green Bicolor LED Lamp 122 SEL6914A 3o Round Orange LED Lamp 120 SG-9LCNR Rectifier Diode for Alternator 107 SML19416W 5o Round Orange / Green Bicolor LED Lamp 122 SEL6914W 3o Round Orange LED Lamp 120 SG-9LCNS Rectifier Diode for Alternator 107 SML19460C 2.55 Rectangular Orange / Green Bicolor LED Lamp 122 SEL6915A 3o Round Orange LED Lamp 120 SG-9LLCNR Rectifier Diode for Alternator 107 SML72420C 3.36 Rectangular Red / Green Bicolor LED Lamp 122 SEL6927A 4o Bow-shaped Orange LED Lamp 121 SG-9LLCNS Rectifier Diode for Alternator 107 SML72423C Bow Lens Red / Green Bicolor LED Lamp 122 SELS1803C Inner Lens AlGaInP Amber Chip LED 123 SHV-05JS High-Voltage Rectifier Diode for Ignition Coil 108 SML72755C Egg Shape Red / Yellow Bicolor LED Lamp 122 SELS1903C Inner Lens AlGaInP Orange Chip LED 123 SHV-08J High-Voltage Rectifier Diode for Ignition Coil 108 SML72923C Bow Lens Red / Orange Bicolor LED Lamp 122 SELS5223C 5mm Pitch Lead Bow-shaped AlGaInP Red LED Lamp 121 SHV-30J High-Voltage Rectifier Diode for Ignition Coil 108 SML76755WN Egg Shape Red / Yellow Bicolor LED Lamp 122 SELS5823C 5mm Pitch Lead Bow-shaped AlGaInP Amber LED Lamp 121 SI-3001S Dropper Type Regulator IC with ON / OFF Control 6 SML78420C 3.36 Rectangular Amber / Green Bicolor LED Lamp 122 SELS5923C 5mm Pitch Lead Bow-shaped AlGaInP Orange LED Lamp 121 SI-3003S Dropper Type Regulator IC (3-terminal) 8 SML78423C Bow Lens Amber/Green Bicolor LED Lamp 122 SELS5B23C 5mm Pitch Lead Bow-shaped AlGaInP Light Amber LED Lamp 121 SI-3101S Dropper Type Regulator IC (2-output) 10 SML79255C Egg Shape Orange / Red Bicolor LED Lamp 122 SELS6B14C 3o Round AlGaInP Light Amber LED Lamp 120 SI-3102S Dropper Type Regulator IC (2-output) 12 SML79420C 3.36 Rectangular Orange / Green Bicolor LED Lamp 122 SELU1210CXM 5o Round AlGaInP Red LED Lamp 119 SI-3201S Switching Type Regulator IC 14 SML79423C Bow Lens Orange/Green Bicolor LED Lamp 122 SELU1250CM 5o Round AlGaInP Red LED Lamp 119 SI-5151S High-side Power Switch IC with Diagnostic Function 16 SML79455C Egg Shape Orange / Green Bicolor LED Lamp 122 SELU1253CMKT 4.65.6o Egg-shaped AlGaInP Red LED Lamp 119 SI-5152S High-side Power Switch IC with Diagnostic Function 18 SMLS79723C Bow Lens AlGaInP Orange / Yellow Bicolor LED Lamp 122 122 SELU1810CXM 5o Round AlGaInP Amber LED Lamp 119 SI-5153S High-side Power Switch IC with Diagnostic Function and built-in Zener Diode 22 SMLU72755C Egg Shape AlGaInP Red / AlGaInP Yellow Bicolor LED Lamp SELU1853CMKT 4.65.6o Egg-shaped AlGaInP Amber LED Lamp 119 SI-5154S High-side Power Switch IC with Diagnostic Function and built-in Zener Diode 24 SMLU78755C Egg Shape AlGaInP Amber / AlGaInP Yellow Bicolor LED Lamp 122 SELU1D10CXM 5o Round InGaN Pure Green LED Lamp 119 SI-5155S High-side Power Switch IC with Diagnostic Function 20 SPB-64S Schottky barrier Diode (Surface Mount) 113 SELU1D50CM 5o Round InGaN Pure Green LED Lamp 119 SI-5300 Full-bridge PWM Motor Driver IC 48 SPB-G34S Schottky barrier Diode (Surface Mount) 113 SELU1E10CXM 5o Round InGaN Blue LED Lamp 119 SID1003BQ 5o Round Infrared LED 124 SPB-G54S Schottky barrier Diode (Surface Mount) 113 SELU1E50CM 5o Round InGaN Blue LED Lamp 119 SID1010CM 5o Round Infrared LED 124 SPB-G56S Schottky barrier Diode (Surface Mount) 113 SELU2710C 3o Round AlGaInP Yellow LED Lamp 120 SID1010CXM 5o Round Infrared LED 124 SPF0001 Power transistor Array (Surface Mount) 91 SELU2D10C 3o Round InGaN Pure green LED Lamp 120 SID1050CM 5o Round Infrared LED 124 SPF5002A Low-side Switch IC (Surface Mount 4-circuit) 40 SELU2E10C 3o Round InGaN Blue LED Lamp 120 SID1G307C 5o Round Infrared LED 124 SPF5003 High-side Power Switch IC (Surface Mount 2-circuits) 28 SELU5723C 5mm Pitch Lead Bow-shaped AlGaInP Yellow LED Lamp 121 SID1K10CM 5o Round Infrared LED 124 SPF5004 High-side Power Switch IC (Surface Mount 2-circuits) 30 SELU5823C 5mm Pitch Lead Bow-shaped AlGaInP Amber LED Lamp 121 SID1K10CXM 5o Round Infrared LED 124 SPF5007 High-side Power Switch IC (Surface Mount 3-circuits) 34 SELU5E20C 5mm Pitch Lead Rectangular InGaN Pure Green LED Lamp 121 SID2010C 3o Round Infrared LED 124 SPF5009 Low-side Switch IC (Surface Mount 4-circuit) 42 SELU5E23C 5mm Pitch Lead Bow-shaped InGaN Blue LED Lamp 121 SID2K10C 3o Round Infrared LED 124 SPF5012 Low-side Switch IC (Surface Mount 4-circuit with Output Monitor) 44 SFPB-54 Schottky barrier Diode (Surface Mount) 113 SID303C 5o Round Infrared LED 124 SPJ-63S Schottky barrier Diode (Surface Mount) 113 SFPB-56 Schottky barrier Diode (Surface Mount) 113 SID307BR 5o Round Infrared LED 124 SPZ-G36 Power Zener Diode (Surface Mount) 109 SFPB-59 Schottky barrier Diode (Surface Mount) 113 SID313BP 5o Round Infrared LED 124 STA315A Power transistor Array 81 SFPB-64 Schottky barrier Diode (Surface Mount) 113 SLA2402M High Voltage Driver IC for HID Lamps 52 STA335A Power transistor Array 82 SFPB-66 Schottky barrier Diode (Surface Mount) 113 SLA2403M High Voltage Driver IC for HID Lamps 56 STA415A Power transistor Array 83 SFPB-69 Schottky barrier Diode (Surface Mount) 113 SLA2501M High-side Power Switch IC (3-circuits) 32 STA461C Power transistor Array 84 SFPB-74 Schottky barrier Diode (Surface Mount) 113 SLA2502M High-side Power Switch IC (4-circuits) 36 STA463C Power transistor Array 85 SFPB-76 Schottky barrier Diode (Surface Mount) 113 SLA4708M Stepper-motor Driver IC 46 STA464C Power transistor Array 86 SFPE-63 Schottky barrier Diode (Surface Mount) 113 SLA5027 MOS FET Array 102 STA508A MOS FET Array 99 SFPE-64 Schottky barrier Diode (Surface Mount) 113 SLA8004 Power transistor Array 87 STA509A MOS FET Array 100 SFPJ-53 Schottky barrier Diode (Surface Mount) 113 SMA5113 MOS FET Array 101 TFC561D Thyristor for HID Lamp Ignition with built-in Reverse Diode 106 SFPJ-63 Schottky barrier Diode (Surface Mount) 113 SML11516C 5o Round Deep Red / Pure Green Bicolor LED Lamp 122 UGS3059KA Hall-Effect IC (Gear-Tooth Sensor) 60 SFPJ-73 Schottky barrier Diode (Surface Mount) 113 SML1216C 5o Round Red / Green Bicolor LED Lamp 122 UGS3060KA Hall-Effect IC (Gear-Tooth Sensor) 60 SFPL-52 Ultra-Fast-Recovery Rectifier Diode (Surface Mount) 112 SML1216W 5o Round Red / Green Bicolor LED Lamp 122 UGS3132* Hall-Effect IC (Bipolar Switch) 60 SFPL-62 Ultra-Fast-Recovery Rectifier Diode (Surface Mount) 112 SML12451W 5o Round Red / Green Bicolor LED Lamp 122 UGS3133* Hall-Effect IC (Bipolar Switch) 60 SFPM-52 Rectifier Diode (Surface Mount) 110 SML12460C 2.55 Rectangular Red / Green Bicolor LED Lamp 122 SFPM-54 Rectifier Diode (Surface Mount) 110 SML1516W 5o Round Deep Red / Pure Green Bicolor LED Lamp 122 SFPM-62 Rectifier Diode (Surface Mount) 110 SML16716CN 5o Round GaAlAs Red / Yellow Bicolor LED Lamp 122 SFPM-64 Rectifier Diode (Surface Mount) 110 SML16716WN 5o Round GaAlAs Red / Yellow Bicolor LED Lamp 122 SFPZ-68 Power Zener Diode (Surface Mount) 109 SML16751WN 5o Round GaAlAs Red / Yellow Bicolor LED Lamp 122 SML16760CN 2.55 Rectangular GaAlAs Red / Yellow Bicolor LED Lamp 122 SG-9CNR 134 Classification Rectifier Diode for Alternator 107 Sanken Electric Co., Ltd. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo PHONE: 03-3986-6164 FAX: 03-3986-8637 Overseas Sales Offices Asia Sanken Electric Singapore Pte. Ltd. 150 Beach Road, #14-03 The Gateway West, Singapore 0718 PHONE: 291-4755 FAX: 297-1744 Sanken Electric Hong Kong Co., Ltd. 1018 Ocean Centre, Canton Road, Kowloon, Hong Kong PHONE: 2735-5262 FAX: 2735-5494 Sanken Electric Korea Co., Ltd. SK Life B/D 6F, 168 Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea PHONE: 82-2-714-3700 FAX: 82-2-3272-2145 North America Allegro MicroSystems, Inc. 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615, U.S.A. PHONE: (508)853-5000 FAX: (508)853-7861 Europe Allegro MicroSystems Europe Limited. Balfour House, Churchfield Road, Walton-on-Thames, Surrey KT12 2TD, U.K. PHONE: 01932-253355 FAX: 01932-246622 Contents of this catalog are subject to change due to modification PRINTED in JAPAN H1-C01EC0-0110015TA