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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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©2012 Fairchild Semiconductor Corporation 1www.fairchildsemi.comNN
November 2014
FAN7085_GF085 Rev. 1.0.2
FAN7085_GF085 High Side Gate Driver with Recharge FET
FAN7085_GF085
High Side Gate Driver with Recharge FET
Features
• Qualified to AEC Q100
• Floating channel designed for bootstrap operation fully oper-
ational up to 300V.
• Tolerance to negative transient voltage on VS pin
• dv/dt immune.
• Gate drive supply range from 4.5V to 20V
• Under-voltage lockout
• CMOS Schmitt-triggered inputs with pull-down and pull-up
• High side output out of phase with input (Inverted input)
• Reset input
• Internal recharge FET for bootstrap refresh
Typical Applications
• Diesel and gasoline injectors/valves
• MOSFET-and IGBT high side driver applications
For Fairchild’s definition of “green” Eco Status, please visit:
http://www.fairchildsemi.com/company/green/rohs_green.html
Description
The FAN7085_GF085 is a high-side gate drive IC with reset
input and built-in recharge FET. It is designed for high voltage
and high speed driving of MOSFET or IGBT, which operates up
to 300V. Fairchild's high-voltage process and common-mode
noise cancellation technique provide stable operation in the
high side driver under high-dV/dt noise circumstances. Logic
input is compatible with standard CMOS outputs. The UVLO cir-
cuits prevent from malfunction when VCC and VBS are lower
than the specified threshold voltage. It is available with space
saving SOIC-8 Package. Minimum source and sink current
capability of output driver is 250mA and 250mA. Built-in
recharge FET to refresh bootstrap circuit is very useful for circuit
topology requiring switches on low and high side of load.
SOIC-8
Ordering Information
Device Package Operating
Temp.
FAN7085M_GF085 SOIC-8 -40 C ~ 125 C
FAN7085MX_GF085 SOIC-8 -40 C ~ 125 C
X : Tape & Reel type
©2012 Fairchild Semiconductor Corporation 2www.fairchildsemi.com
FAN7085_GF085 Rev. 1.0.2
FAN7085_GF085 High Side Gate Driver with Recharge FET
Block Diagrams
VCC Under Voltage
Reset VCC to GND
Logic
Pulse
Filter
Level Shifter
ON
Level Shifter
OFF
Delay
Under
Voltage Reset
VB to VS
Pulse Filter
Flip Flop
Brake before
make
RESET-
IN-
GND
VS
HO
VB
Recharge Path
Pin Assignments
1
2
3
45
6
7
8
VCC
IN
GND
RESET VS
NC
HO
VB
Pin Definitions
Pin Number Pin Name I/O Pin Function Description
1VCC PDriver supply voltage, typically 5V
2IN- IDriver control signal input (Negative Logic)
3GND PGround
4RESET- IDriver enable input signal (Negative Logic)
5VS PHigh side floating offset for MOSFET Source connection
6NC -No connection (No Bond wire)
7HO AHigh side drive output for MOSFET Gate connection
8VB PDriver output stage supply
©2012 Fairchild Semiconductor Corporation 3www.fairchildsemi.com
FAN7085_GF085 Rev. 1.0.2
FAN7085_GF085 High Side Gate Driver with Recharge FET
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are abso-
lute voltages referenced to GND.
Parameter Symbol Min. Max. Unit
High side floating supply voltage VBS -0.3 25 V
High side driver output stage voltage
Neg. transient: 0.5 ms, external MOSFET off
VB-5 325 V
High side floating supply offset voltage
Neg. transient 0.2 us
Vs -25 300 V
High side floating output voltage VHO VS-0.3 VB+0.3 V
Supply voltage VCC -0.3 25 V
Input voltage for IN- VIN -0.3 Vcc+0.3 V
Input voltage for RESET- VRES -0.3 Vcc+0.3 V
Power Dissipation 1) Pd 0.625 W
Thermal resistance, junction to ambient 1) Rthja 200 C/W
Electrostatic discharge voltage
(Human Body Model)
VESD 1.5K V
Charge device model VCDM 500 V
Junction Temperature Tj 150 C
Storage Temperature TS-55 150 C
Note: 1) The thermal resistance and power dissipation rating are measured bellow conditions;
JESD51-2: Integrated Circuit Thermal Test Method Environmental Conditions - Natural condition(StillAir)
JESD51-3: Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Package
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions
Parameter Symbol Min. Max. Unit
High side floating supply voltage(DC)
Transient:-10V@ 0.2 us
VBVS+4.5 VS+20 V
High side floating supply offset voltage(DC)
@VBS=7V
VS-3 300 V
High side floating supply offset voltage(Transient)
0.2us @VBS<25V
VS-25 300 V
High side floating output voltage VHO Vs VB V
Allowable offset voltage Slew Rate 1) dv/dt -50 V/ns
Supply voltage for logic part VCC 4.5 20 V
Input voltage for IN- VIN 0Vcc V
Input voltage for RESET- VRESET 0Vcc V
Switching frequency 2) Fs 200K Hz
Minimum low input width 3) tIN(low,min) 560 -ns
Minimum high input width 3) tIN(high,min) 60 -ns
Minimum operating voltage of VB related to GND VB(MIN)4) 4 - V
Ambient temperature Ta-40 125 C
.-40°C <= Ta <= 125°C
Note: 1) Guaranteed by design.
2) Duty = 0.5, VBS >=7V
3) Guaranteed by design. Pulse widths below the specified values, may be ignored. Output will either follow the input signal or will ignore it.
No false output state is guaranteed when minimum input width is smaller than tin
4) Guaranteed by design
©2012 Fairchild Semiconductor Corporation 4www.fairchildsemi.com
FAN7085_GF085 Rev. 1.0.2
FAN7085_GF085 High Side Gate Driver with Recharge FET
Statics Electrical Characteristics
Unless otherwise specified, -40°C <= Ta <= 125°C, VCC = 5V, VBS = 7V, VS = 0V, VRESET = 5V, RL = 50, CL = 2.5nF.
Parameter Symbol Conditions Min. Typ. Max. Unit
VCC and VBS Supply Characteristics
VCC and VBS supply under voltage
positive going threshold
VCCUV+
VBSUV+
Vcc and VBS rising from 0V -3.7 4.3 V
VCC and VBS supply under voltage
negative going threshold
VCCUV-
VBSUV-
Vcc and VBS dropping from 5V 2.8 3.4 - V
VCC and VBS under voltage hysteresis VCCUVH
VBSUVH
-0.02 0.3 - V
Under voltage lockout response time tduvcc
tduvbs
VCC: 6.5V->2.4V or 2.4V->6.5V
VBS: 6.5V->2.4V or 2.4V->6.5V
0.5
0.5
20
20
us
us
Offset supply leakage current ILK VB=VS=300V - - 200 uA
Quiescent Vcc supply current IQCC Vcc=20V - - 500 uA
Quiescent VBS supply current IQBS1 Static mode,
VBS=7V, VIN=0 or 5V
100 uA
Quiescent VBS supply current IQBS2 Static mode,
VBS=16V, VIN=0 or 5V
200 uA
VBS drop due to output turn-on
(Design guaranty)
VBS VBS=7V, Cbs=1uF, tdIG-IN =3uS,
tTEST=100uS
210 mV
Input Characteristics
High logic level input voltage for IN- VIH 0.6VCC - - V
Low logic level input voltage for IN- VIL - - 0.28VCC V
Low logic level input bias current for IN- IIN- VIN=0 525 60 uA
High logic level input bias current for IN- IIN+ VIN=5V - - 5 uA
Full up resistance at IN RIN 83 200 1000
High logic level input voltage for RESET- VRH 0.6Vcc - - V
Low logic level input voltage for RESET- VRL 0.28Vcc V
High logic level input current for RESET- IRES+ VRESET=5V 525 60 uA
Low logic level input bias current for RESET- IRES- VRESET=0 5uA
Full down resistance at RESET- RRES 83 200 1000
Output characteristics
High level output voltage, VB - VHO VOH IO=0 - - 0.1 V
Low level output voltage, VHO-GND VOL IO=0 - - 0.1 V
Peak output source current IO+ VIN=5V 250 450 -mA
Peak output sink current IO- VIN=0 250 450 -mA
Equivalent output resistance ROP 15.5 28
RON 15.5 28
Recharge Characteristics
Recharge TR turn-on propagation delay Ton_rech 47.9 9.8 us
Recharge TR turn-off propagation delay Toff_rech 0.2 0.4 us
Recharge TR on-state voltage drop VRECH Is=1mA, VIN=5V @125C1.2 V
Dead Time Characteristics
High side turn-off to recharge gate turn-on DTHOFF Vcc=5V, VS=7V 47.8 9.8 us
Recharge gate turn-off to high side turn-on DTHON Vcc=5V, VS=7V 0.1 0.4 0.7 us
Note: The input parameter are referenced to GND. The VO and IO parameters are referenced to GND.
©2012 Fairchild Semiconductor Corporation 5www.fairchildsemi.com
FAN7085_GF085 Rev. 1.0.2
FAN7085_GF085 High Side Gate Driver with Recharge FET
Dynamic Electrical Characteristics
Unless otherwise specified, -40°C <= Ta <= 125°C, VCC = 5V, VBS = 7V, VS = 0V, VRESET = 5V, RL = 50, CL = 2.5nF.
Parameter Symbol Conditions Min. Typ. Max. Unit
Input-to-output turn-on propagation delay tplh 50% input level to 10% output level,
VS = 0V
0.56 1us
Input-to-output turn-off propagation delay tphl 50% input level to 90% output level
VS = 0V
-0.15 0.5 us
RESET-to-output turn-off propagation delay tphl_res 50% input level to 90% output level -0.17 0.5 us
RESET-to-output turn-on propagation delay tplh_res 50% input level to 10% output level -0.56 1us
Output rising time tr1 Tj=25C - 65 200 ns
tr2 -400 ns
tr3 Tj=25C,VBS=16V 65 200 ns
tr4 VBS=16V -400 ns
Output falling time tf1 Tj=25C - 25 200 ns
tf2 -300 ns
tf3 Tj=25C,VBS=16V 25 200 ns
tf4 VBS=16V -300 ns
©2012 Fairchild Semiconductor Corporation 6www.fairchildsemi.com
FAN7085_GF085 Rev. 1.0.2
FAN7085_GF085 High Side Gate Driver with Recharge FET
Application Information
1. Logic Tables
VCC VBS RESET- IN- Ho RechFET
< VCCUVLO- X X X OFF ON
X X LOW XOFF ON
X X X HIGH OFF ON
> VCCUVLO+ > VBSUVLO+ HIGH LOW ON OFF
> VCCUVLO+ < VBSUVLO- HIGH LOW OFF OFF
Notes:
X means independent from signal
IN-=LOW indicates that the high side NMOS is ON
IN-=HIGH indicates that the high side NMOS is OFF
RechFET =ON indicates that the recharge MOSFET is ON
RechFET =OFF indicates that the recharge MOSFET is OFF
©2012 Fairchild Semiconductor Corporation 7www.fairchildsemi.com
FAN7085_GF085 Rev. 1.0.2
FAN7085_GF085 High Side Gate Driver with Recharge FET
Typical Application Circuit
VCC
IN-
GND
RESET-
VB
HO
NC
VS
C1
R1
R2
C2
VCC
C3
D1 Up to 300V
Load
1. Typical Application Circuit
VCC
IN-
GND
RESET-
VB
HO
NC
VS
C2 C1
R1
R2
R3
R4
C3
5V
From Charge Pump Voltage Source
C4
Load
GND
From LS Driver
S1
S2
D3
D4
D5
2. Application Example
©2012 Fairchild Semiconductor Corporation 8www.fairchildsemi.com
FAN7085_GF085 Rev. 1.0.2
FAN7085_GF085 High Side Gate Driver with Recharge FET
Input-Output Waveforms
Toff_rech Ton_rech
tphl
IN-
RESET-
VS
VHO
Recharge tplh
10%
90%90%
10%
tr tf
Figure.1 Input and Output Timing Diagram and Switching Time Waveform Definition
1. Input/Output Timing Diagrams
2. Reset Timing Diagrams
tphl_res
tplh_res
IN-
RESET-
VHO
Figure.2 Reset and Output Timing Diagram
©2012 Fairchild Semiconductor Corporation 9www.fairchildsemi.com
FAN7085_GF085 Rev. 1.0.2
FAN7085_GF085 High Side Gate Driver with Recharge FET
3.VB Drop Voltage Diagram
VBdrop
IN-
RESET-
VB-VS
Ig
7V
Brake before make
VCC
IN-
GND
RESET-
VB
HO
NC
VS
1u
50R
2n5
Ig
Figure3.b VB Drop Voltage Test Circuit
Figure3.a VB Drop Voltage Diagram
4.Recommendation Min. Short Pulse Width
Figure 4a.Short Pulse Width Test Circuit and Pulse Width Waveform
Figure 4b. Abnormal Output Waveform with short pulse width
Figure 4c. Recommendation of pulse width Output Waveform
Bat1
1
2
45
6
7
8
3
VCC
IN
RESET
N.C
VS
HO
VB
COM
Bat2
0.1uF
FAN7085
IN 60%
28%
Tpulse =560nS
Less than
430nS Pulse
Width
142KHz
IN
HO Abnormal Output
Recommended
pulse width 560nS
142KHz
HO
IN
©2012 Fairchild Semiconductor Corporation 10 www.fairchildsemi.com
FAN7085_GF085 Rev. 1.0.2
FAN7085_GF085 High Side Gate Driver with Recharge FET
Performance Graphs
4.4 4.7 5.0 5.3 5.6 5.9 6.2 6.5
2.2
2.4
2.6
2.8
3.0
3.2
Typ.
Vinth+ (V)
Vsupply (V)
Figure 5a. Positive IN and RESET Threshold vs VCC Supply Figure 5b. Negative IN and RESET Threshold vs VCC Supply
Figure6b. Output Source Current vs Temperature
Figure 7a. Turn-On Propagation Delay Time vs Temperature Figure 7b. Turn-Off Propagation Delay Time vs Temperature
Figure6a. Output Sink Current vs VBS Supply
VBS=7V, RL=50, CL=2.5nF
4.4 4.7 5.0 5.3 5.6 5.9 6.2 6.5
1.8
2.0
2.2
2.4
2.6
Typ.
Vinth- (V)
Vsupply (V)
5101520
0
400
800
1200
1600
2000
125oC
Output Sink Cureent (mA)
VBS(V)
-40oC
-50 0 50 100 150
300
350
400
450
500
Typ.
Output Source Cureent (mA)
Temperature (oC)
-50 0 50 100 150
500
530
560
590
620
650
Turn-on Propagation Delay (ns)
Temperature(oC)
Typ.
-50 0 50 100 150
100
150
200
250
Turn-off Propagation Delay (ns)
Temperature (oC)
Typ.
VBS=7V, RL=50, CL=2.5nF
VCC=5V, VBS=7VVCC=5V
VCC=5V,VBS=7V, RL=50, CL=2.5nFVCC=5V,VBS=7V, RL=50, CL=2.5nF
This performance graphs based on ambient temperature -40C ~125C
-50 0 50 100 150
100
150
200
250
Typ.
RES-to-Output Turn-off Propagation Delay (ns)
Temperature (oC)
-50 0 50 100 150
500
550
600
650
700
Typ.
RES-to-Output Turn-on Propagation Delay (ns)
Temperature (oC)
Figure 8a. RES to Output Turn-On Propagation Delay vs Temperature Figure 8b. RES to Output Turn-Off Propagation Delay vs Temperatur
Figure 10. Logic “1” RESET Input Current vs Temperature
Figure 11a. VBS Under Voltage Threshold(+) vs Temperature Figure 11b. VBS Under Voltage Threshold(-) vs Temperature
Figure 9. Logic “0” IN Input Current vs Temperature
VCC=5V, VBS=7V, RL=50, CL=2.5nF VCC=5V, VBS=7V, RL=50, CL=2.5nF
-50 0 50 100 150
0
10
20
30
40
50
Logic "0" Input Current (uA)
Temperature (oC)
Typ.
-50 0 50 100 150
0
10
20
30
40
50
Typ.
Logic "1" RES Input Current (uA)
Temperature (oC)
VCC=5V, RL=50, CL=2.5nF VCC=5V, RL=50, CL=2.5nF
-50 0 50 100 150
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Min.
Max.
Typ.
VBS Supply Voltage(V)
Temperature(oC)
-50 0 50 100 150
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VBS Supply Voltage(V)
Temperature(oC)
Max.
Typ.
Min.
©2012 Fairchild Semiconductor Corporation 11 www.fairchildsemi.com
FAN7085_GF085 Rev. 1.0.2
FAN7085_GF085 High Side Gate Driver with Recharge FET
Figure 12a. VCC Under Voltage Threshold(+) vs Temperature Figure 12b. VCC Under Voltage Threshold(-) vs Temperature
Figure 13. Recharge FET Turn-on Delay time
Figure 15. Recharge FET I-V curve
Figure 14. Recharge FET Turn-off Delay time
VBS=7V
-50 0 50 100 150
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VCC Supply Voltage(V)
Temperature(oC)
Max.
Typ.
Min.
-50 0 50 100 150
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VCC Supply Voltage(V)
Temperature(oC)
Max.
Typ.
Min.
-50 0 50 100 150
4
6
8
10
Typ.
Recharge Transistor Turn-on Propagation
Delay (us)
Temperature(oC)
-50 0 50 100 150
140
180
220
260
300
Typ.
Recharge Gate Turn-off Propagation
Delay (ns)
Temperature (oC)
0.4 0.6 0.8 1.0 1.2
0.2
0.6
1.0
1.4
1.8
I (mA)
V (V)
Typ.
-50 0 50 100 150
4
6
8
10
Typ.
High Side Turn-off to Recharge Gate
Turn-on (us)
Temperature (oC)
Figure 16. High Side Turn-off to Recharge FET turn-on VS Temperature
VCC=5v, VBS=7, VRL=50, CL=2.5nF VCC=5v, VBS=7V, RL=50, CL=2.5nF
VCC=5v, VBS=7V, RL=50, CL=2.5nF VCC=5v, VBS=7V, RL=50, CL=2.5nF
©2012 Fairchild Semiconductor Corporation 12 www.fairchildsemi.com
FAN7085_GF085 Rev. 1.0.2
FAN7085_GF085 High Side Gate Driver with Recharge FET
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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