ZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -20V Features and Benefits ID RDS(on) TA = +25C 600m @ VGS = -4.5V -0.92A 900m @ VGS = -2.7V -0.75A Fast switching speed Low on-resistance Low threshold Low gate drive Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for high-efficiency power management applications. DC - DC converters Power management functions Disconnect switches Motor control Case: SOT23 Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish; Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) SOT23 D S G D G Top View S Equivalent Circuit Top View Pin Out Ordering Information (Note 4) Product ZXM61P02FTA Notes: Marking P02 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 Units 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html Marking Information P02 ZXM61P02F Document Number DS33478 Rev. 3 - 2 P02 = Product Type Marking Code 1 of 7 www.diodes.com October 2013 (c) Diodes Incorporated ZXM61P02F Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS = 4.5V TA = +25C (Note 6) TA = +70C (Note 6) Pulsed Drain Current (Note 7) Continuous Source Current (Body Diode) (Note 6) Pulsed Source Current (Body Diode) (Note 7) ID IDM IS ISM Value -20 12 -0.9 -0.7 -4.9 -0.9 -4.9 Units V V Value 625 5 806 6.4 200 155 -55 to +150 Unit mW mW/C mW mW/C C/W C/W C A A A A Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation (Note 5) Linear Derating Factor Power Dissipation (Note 6) Linear Derating Factor Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Notes: Symbol PD PD RJA RJA TJ, TSTG 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions 6. For a device surface mounted on FR4 PCB measured at t 5 secs. 7. Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10s - pulse current limited by maximum junction temperature. Thermal Characteristics ZXM61P02F Document Number DS33478 Rev. 3 - 2 2 of 7 www.diodes.com October 2013 (c) Diodes Incorporated ZXM61P02F Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 -0.1 100 V A nA ID = -250A, VGS = 0V VDS = -20V, VGS = 0V VGS = 12V, VDS = 0V VGS(th) -0.7 V Static Drain-Source On-Resistance (Note 8) RDS (ON) Forward Transconductance (Notes 8 and 10) Diode Forward Voltage (Note 8) Reverse Recovery Time (Note 10) Reverse Recovery Charge (Note 10) DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time (Note 9) Turn-On Rise Time (Note 9) Turn-Off Delay Time (Note 9) Turn-Off Fall Time (Note 9) Total Gate Charge (Note 9) Gate-Source Charge (Note 9) Gate-Drain Charge (Note 9) gfs VSD trr Qrr 0.56 14.9 5.6 -1.5 0.6 0.9 -0.95 ID = -250A, VDS = VGS VGS = -4.5V, ID = -0.61A VGS = -2.7V, ID = -0.31A VDS = -10V, ID = -0.31A TJ = +25C, IS = -0.61A, VGS = 0V Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd 150 70 30 2.9 6.7 11.2 10.1 3.5 0.5 1.5 Notes: S V ns nC Test Condition TJ = +25C, IF = -0.61A, di/dt = 100A/s pF VDS = -15V, VGS = 0V f = 1.0MHz ns VDD = -110V, ID = -0.93A, RG 6.2 RD 11 nC VDS = -16V, VGS = -4.5V, ID = -0.61A 8. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 9. Switching characteristics are independent of operating junction temperature. 10. For design aid only, not subject to production testing. ZXM61P02F Document Number DS33478 Rev. 3 - 2 3 of 7 www.diodes.com October 2013 (c) Diodes Incorporated ZXM61P02F Typical Characteristics ZXM61P02F Document Number DS33478 Rev. 3 - 2 4 of 7 www.diodes.com October 2013 (c) Diodes Incorporated ZXM61P02F Typical Characteristics - continued Test Circuits Current regulator QG 12V VG QGS 50k 0.2mF Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% RD VGS VDS RG VDD 10% VGS tr t d(of ) t (on) tr t d(on) t (on) Switching time waveforms ZXM61P02F Document Number DS33478 Rev. 3 - 2 Pulsewidth , 1mS Duty factor 0.1% 5 of 7 www.diodes.com Switching time test circuit October 2013 (c) Diodes Incorporated ZXM61P02F Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 7 l l A H SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 8 All Dimensions in mm J K 1 K a M A 1 L L B C D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X ZXM61P02F Document Number DS33478 Rev. 3 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 6 of 7 www.diodes.com October 2013 (c) Diodes Incorporated ZXM61P02F IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright (c) 2013, Diodes Incorporated www.diodes.com ZXM61P02F Document Number DS33478 Rev. 3 - 2 7 of 7 www.diodes.com October 2013 (c) Diodes Incorporated