ZXM61P02F
Document Number DS33478 Rev. 3 - 2
1 of 7
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ZXM61P02F
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) ID
TA = +25C
-20V
600mΩ @ VGS = -4.5V -0.92A
900mΩ @ VGS = -2.7V -0.75A
Description and Applications
This MOSFET utilizes a unique structure that combines the benefits
of low on-resistance with fast switching speed, making it ideal for
high-efficiency power management applications.
DC - DC converters
Power management functions
Disconnect switches
Motor control
Features and Benefits
Fast switching speed
Low on-resistance
Low threshold
Low gate drive
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish; Solderable per MIL-STD-202,
Method 208
Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXM61P02FTA P02 7 8 3000 Units
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Top View Equivalent Circuit
P02 = Product Type Marking Code
D
S
G
Top View
Pin Out
D
S
G
SOT23
P02
ZXM61P02F
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ZXM61P02F
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current VGS = 4.5V TA = +25°C (Note 6)
TA = +70°C (Note 6) ID -0.9
-0.7 A
Pulsed Drain Current (Note 7) IDM -4.9 A
Continuous Source Current (Body Diode) (Note 6) IS -0.9 A
Pulsed Source Current (Body Diode) (Note 7) ISM -4.9 A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Linear Derating Factor PD 625
5
mW
mW/°C
Power Dissipation (Note 6)
Linear Derating Factor PD 806
6.4
mW
mW/°C
Thermal Resistance, Junction to Ambient (Note 5) RθJA 200 °C/W
Thermal Resistance, Junction to Ambient (Note 6) RθJA 155 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
6. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs.
7. Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10μs - pulse current limited by maximum junction temperature.
Thermal Characteristics
ZXM61P02F
Document Number DS33478 Rev. 3 - 2
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ZXM61P02F
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS -20 V ID = -250μA, VGS = 0V
Zero Gate Voltage Drain Current IDSS -0.1 μA VDS = -20V, VGS = 0V
Gate-Source Leakage IGSS ±100 nA
VGS = 12V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage VGS
(
th
)
-0.7 -1.5 V
ID = -250A, VDS = VGS
Static Drain-Source On-Resistance (Note 8) RDS (ON) 0.6 Ω VGS = -4.5V, ID = -0.61A
0.9 VGS = -2.7V, ID = -0.31A
Forward Transconductance (Notes 8 and 10) gfs 0.56 S VDS = -10V, ID = -0.31A
Diode Forward Voltage (Note 8) VSD -0.95 V
TJ = +25°C, IS = -0.61A, VGS = 0V
Reverse Recovery Time (Note 10) tr
r
14.9 ns TJ = +25°C, IF = -0.61A,
di/dt = 100A/μs
Reverse Recovery Charge (Note 10) Qr
r
5.6 nC
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance Ciss 150
pF VDS = -15V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss 70
Reverse Transfer Capacitance Crss 30
Turn-On Delay Time (Note 9) td
(
on
)
2.9
ns VDD = -110V, ID = -0.93A,
RG 6.2Ω RD 11Ω
Turn-On Rise Time (Note 9) t
r
6.7
Turn-Off Delay Time (Note 9) td
(
off
)
11.2
Turn-Off Fall Time (Note 9) tf 10.1
Total Gate Charge (Note 9) Q
g
3.5
nC VDS = -16V, VGS = -4.5V,
ID = -0.61A
Gate-Source Charge (Note 9) Q
g
s 0.5
Gate-Drain Charge (Note 9) Q
g
d 1.5
Notes: 8. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.
ZXM61P02F
Document Number DS33478 Rev. 3 - 2
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ZXM61P02F
Typical Characteristics - continued
Test Circuits
C
urr
e
nt
regulator
Ch ar g e
Gate charge test circuit
Sw itching time test circuit
Basicgatechargewaveform
Sw itching time w aveforms
D.U.T
50k
0.2mF
12V Sa m e as
D.U.T
V
GS
V
GS
V
DS
V
G
Q
GS
Q
GD
Q
G
V
GS
90%
10%
t
(on)
t
(on)
t
d(on)
t
r
t
r
t
d(of )
V
DS
V
DD
R
D
R
G
Pulse width , 1mS
Duty factor 0.1%
V
DS
I
D
I
G
ZXM61P02F
Document Number DS33478 Rev. 3 - 2
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ZXM61P02F
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.890 1.00 0.975
K1 0.903 1.10 1.025
L 0.45 0.61 0.55
L1 0.25 0.55 0.40
M 0.085 0.150 0.110
a
8°
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
XE
Y
C
Z
J
K1K
L1
H
L
M
All 7°
A
CB
D
a
ZXM61P02F
Document Number DS33478 Rev. 3 - 2
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October 2013
© Diodes Incorporated
ZXM61P02F
IMPORTANT NOTICE
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