Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
APPLICATION
Switching mode power supply, light dimmer, electric flasher unit, hair drier,
control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared
kotatsu · carpet, small motor control,
copying machine, electric tool, solenoid drivers, other general purpose control applications
BCR10PM
•IT (RMS) ......................................................................10A
•V
DRM ..............................................................400V/600V
•I
FGT !, IRGT !, IRGT #......................... 30mA (20mA) ✽5
•Viso........................................................................ 1500V
• UL Recognized: File No. E80276
✽1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
Conditions
Commercial power frequency, sine full wave 360° conduction, Tc=85°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Ratings
10
100
41.6
5
0.5
10
2
–40 ~ +125
–40 ~ +125
2.0
1500
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage ✽1
Non-repetitive peak off-state voltage ✽1
Voltage class Unit
V
V
MAXIMUM RATINGS
8
400
500
12
600
720
OUTLINE DRAWING
Dimensions
in mm
TO-220F
TYPE
NAME
VOLTAGE
CLASS
φ3.2±0.2
1.3 MAX
0.8
2.54
13.5 MIN3.6 5.0
1.2
8.5
10.5 MAX
5.2
4.5
231
2
1
3
1
2
3
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
17
2.54
2.8
0.5 2.6
∗ Measurement point of
case temperature
Feb.1999
10023 5710
1
40
20
23 5710
2
44
60
80
100
30
10
50
70
90
0
3.80.6 1.4 2.2 3.01.0 1.8 2.6 3.4
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
T
j
= 125°C
T
j
= 25°C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽4.The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
✽5.High sensitivity (IGT≤20mA) is also available. (IGT item 1)
Test conditions
Voltage
class
8
12
VDRM
(V)
400
600
Min.
—
10
—
10
Commutating voltage and current waveforms
(inductive load)
(dv/dt) c
Symbol
R
L
R
L
Unit
V/µs
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state commutat-
ing current
(di/dt)c=–5.0A/ms
3. Peak off-state voltage
VD=400V
Symbol
IDRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
(dv/dt)c
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage ✽2
Gate trigger current ✽2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Test conditions
Tj=125°C, VDRM applied
Tc=25°C, ITM=15A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C, VD=1/2VDRM
Junction to case ✽4
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
V/µs
Typ.
—
—
—
—
—
—
—
—
—
—
—
!
@
#
!
@
#
ELECTRICAL CHARACTERISTICS
Limits
Min.
—
—
—
—
—
—
—
—
0.2
—
✽3
Max.
2.0
1.5
1.5
1.5
1.5
30✽5
30✽5
30✽5
—
3.5
—
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
PERFORMANCE CURVES
Feb.1999
2310
–1
5710
0
23 5710
1
23 5710
2
3.5
3.0
2.5
2.0
1.5
1.0
0.5
4.0
0
2310
2
5710
3
23 5
10
0
2310
1
5710
2
23 5710
3
23 5710
4
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
–1
VGD = 0.2V
PGM = 5W
VGM = 10V
VGT = 1.5V IGM = 2A
IRGT I IFGT I, IRGT III
PG(AV) =
0.5W
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
TYPICAL EXAMPLE
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
IFGT I
IRGT I, IRGT III
TYPICAL EXAMPLE
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (°C/W)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
TRANSIENT THERMAL IMPEDANCE (°C/W)
CONDUCTION TIME
(CYCLES AT 60Hz)
10
3
10
–1
10
3
10
4
10
2
7
5
3
2
10
0
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
1
23 57 23 57
10
2
10
5
23 57 23 57
NO FINS 16
12
6
4
2
14
10
8
0160 24 86 101214
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
GATE CHARACTERISTICS
100 (%)
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
100 (%)
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Feb.1999
LACHING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT (mA)
JUNCTION TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (°C)
14040–40–60 –20 0 20 60 80 100120
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
TYPICAL EXAMPLE
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
10
1
TYPICAL EXAMPLE
160
120
100
60
20
0160 2 6 10 14
40
80
140
4812
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CASE TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
160
120
100
60
20
0160 2 6 10 14
40
80
140
4812
60 60 t2.3
120 120 t2.3
100 100 t2.3
NATURAL
CONVECTION
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE,
INDUCTIVE
LOADS
160
120
100
60
20
03.20 0.4 1.2 2.0 2.8
40
80
140
0.8 1.6 2.4
NATURAL CONVECTION
NO FINS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
160–40 0 40 80 120
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
T
2
+, G–
TYPICAL
EXAMPLE
T
2
+, G+
T
2
–, G–
TYPICAL
EXAMPLE
DISTRIBUTION
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
100 (%)
HOLDING CURRENT (T
j
= t°C)
HOLDING CURRENT (T
j
= 25°C)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Feb.1999
160
100
80
40
20
014040–40–60 –20 0 20 60 80
140
100120
60
120
TYPICAL EXAMPLE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
COMMUTATION CHARACTERISTICS
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
100 (%)
BREAKOVER VOLTAGE (dv/dt = xV/µs)
BREAKOVER VOLTAGE (dv/dt = 1V/µs)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (µs)
100 (%)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
10
1
10
3
7
5
3
2
10
0
23 5710
1
10
2
7
5
3
2
23 5710
2
4
4
44
I
RGT III
I
RGT I
I
FGT I
TYPICAL EXAMPLE
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160
# 2
# 1
TYPICAL EXAMPLE
T
j
= 125°C
I QUADRANT
III QUADRANT
10
1
2310
0
5710
1
23 5710
2
23 5710
3
3
2
10
2
7
5
3
2
7
5
7
5
3
2
10
0
TYPICAL
EXAMPLE
T
j
= 125°C
I
T
= 4A
τ = 500µs
V
D
= 200V
f = 3Hz
I QUADRANT
III QUADRANT
MINIMUM
CHARAC-
TERISTICS
VALUE
VOLTAGE WAVEFORM
CURRENT WAVEFORM
V
D
t
(dv/dt)
C
I
T
τt
(di/dt)
C
100 (%)
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
6Ω6Ω
6Ω
6V 6V
6V
R
G
R
G
R
G
A
V
A
V
A
V
TEST PROCEDURE 1
TEST PROCEDURE 3
TEST PROCEDURE 2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
