BC635
Medium Power Bipolar Transistors
Page <1> 13/05/08 V1.1
Features:
•High performance, low frequency devices typically with current ratings 1A up
to 1W power dissipation.
•NPN silicon planar epitaxial transistors.
•Driver stages of audio amplifier application.
TO-92 Plastic Package Dimensions Minimum Maximum
A 4.32 5.33
B 4.45 5.20
C 3.18 4.19
D 0.41 0.55
E 0.35 0.50
F 5°
G
1.14
1.40
H 1.53
K 12.70 -
Dimensions : Millimetres
Pin Configuration:
1. Base
2. Collector
3. Emitter
BC635
Medium Power Bipolar Transistors
Page <2> 13/05/08 V1.1
Absolute Maximum Ratings (Ta= 25°C)
Description Symbol BC635 Unit
Collector-Base Voltage VCBO
45
VCollector-Emitter Voltage VCEO
Emitter-Base Voltage VEBO 5.0
Collector Current Continuous IC 1.0 A
Power Dissipation at Ta= 25°C
Derate Above 25°C PD
800
6.4
mW
mW/°C
Power Dissipation at TC= 25°C
Derate Above 25°C
2.75
22
W
mW/°C
Operating and Storage Junction Temperature Range Tj, Tstg -55 to +150 °C
Thermal Resistance
From Junction to Case Rth (j-c) 45
°C/W
From Junction to Ambient Rth (j-a) 156
Electrical Characteristics (Ta= 25°C unless otherwise specified)
Description Symbol Test Condition TBC635 Units
Collector-Emitter Voltage VCEO* IC= 10mA, IB= 0
>45
VCollector-Base Voltage VCBO IC= 100µA, IE= 0
Emitter-Base Voltage VEBO IE= 10µA, IC= 0 >5.0
Collector Cut off Current ICBO
VCB = 30V, IE= 0
Ta= 125°C
VCB = 30V, IE= 0
<100
<10
nA
µA
Base Emitter On Voltage VBE (on)* IC= 500mA, VCE = 2V <1.0
V
Collector Emitter Saturation Voltage VCE (sat)* IC= 500mA, IB= 50mA <0.5
DC Current Gain hFE*
IC= 5mA, VCE = 2V
IC= 150mA, VCE = 2V
Group-10
Group-16
IC= 500mA, VCE = 2V
>25
-
40 - 250
63 - 160
100 - 250
>25
Dynamic Characteristics
Transistors Frequency fTIC= 50mA, VCE = 2V, f = 100MHz 200 (Typical) MHz
Output Capacitance Cob VCB = 10V, f = 1MHz 7.0 (Typical)
pF
Input Capacitance Cib VBE = 0.5V, IC= 0, f = 1MHz 50 (Typical)
*Pulse Test : Pulse Width = 300µs, Duty Cycle = 2%.
BC635
Medium Power Bipolar Transistors
Page <3> 13/05/08 V1.1
Specifications
VCEO
Maximum
(V)
IC
Maximum
(A)
hFE
Minimum
at IC= 150mA
VCE (Sat)
Maximum
(V)
at IC= 500mA
Package
(Pin Out) Type Part Number
45 1 40 0.5 TO-92 (h) NPN BC635
For enquiries from all other markets
BC635
Medium Power Bipolar Transistors
Page <4> 13/05/08 V1.1
Notes:
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