Preliminary Data Sheet
April 2004
AGR19125E
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19125E is a 125 W, 28 V N-channel later-
ally diffused metal oxide semiconductor (LDMOS)
RF power field effect transistor (FET) suitable for
personal communication service (PCS)
(1930 MHz—1990 MHz), time-division multiple
access (TDMA), and single-carrier or multicarrier
class AB power amplifier applications.
Figure 1. Available Packages
Features
■Typical 2 carrier, N-CDMA performance for
VDD = 28 V, IDQ = 1250 mA, F1 = 1958.75 MHz,
F2 = 1961.25 MHz, IS-95 (pilot, paging, sync,
traffic channels 8—13 ) 1.22 88 MHz chann el
bandwidth (BW). Adjacent channels measured
over a 30 kHz BW at F1 – 0.885 MHz and
F2 + 0.885 MHz. Intermodulation distortion
products measured over a 1.2288 MHz BW at
F1 – 2.5 MHz and F2 + 2.5 MHz. Peak/Average
(P/A) = 9.72 dB at 0.01% probability on CCDF:
— Output power: 24 W.
— Power gain: 15 dB.
— Efficiency: 24%.
— ACPR: –48 dBc.
— IMD3: –34 dBc.
— Return loss: –10 dB.
■High-reliability, gold-metalization process.
■Low hot carrier injection (HCI) induced bias drift
over 20 years.
■Internally matched.
■High gain, efficiency, and linearity.
■Integrated ESD protection.
■Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1960 MHz, 125 W contin-
uous wave (CW) output power.
■Large signal impedance parameters available.
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adverse ly affect
device reliability.
Table 3. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22- A114B (HBM), JES D22-A 115A (MM), and
JESD22-C101A (CDM ) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR19125EU (unflanged) AGR19125EF (flanged)
Parameter Sym Value Unit
Thermal Resistance,
Junction to Case:
AGR19125EU
AGR19125EF RθJC
RθJC 0.5
0.5 °C/W
°C/W
Parameter Sym Value Unit
Drain-source V oltage VDSS 65 Vdc
Gate-source V oltage VGS –0.5, +15 Vdc
Total Dissipation at TC = 2 5 °C:
AGR19125EU
AGR19125EF PD
PD350
350 W
W
Derate Above 25 °C:
AGR19125EU
AGR19125EF —
—2.0
2.0 W/°C
W/°C
Operating Junction Tempera-
ture TJ200 °C
S tor age Tem peratu re Ra nge TSTG –65, + 150 °C
AGR19125E Minimum (V) Class
HBM 500 1B
MM 50 A
CDM 1500 4
2Agere Systems Inc.
125 W, 1930 M Hz —1990 MHz, PCS LDMOS RF Power Transistor April 2004
AGR19125E Preliminary Data Sheet
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. d c Characteristics
Table 5. RF Characteristics
* IS-95 N-CDMA P/A = 9.72 dB at 0.01% CCDF, f1 = 1958.75 MHz, and f2 = 1961.25 MHz.
VDD =28Vdc, IDQ = 1250 mA, and POUT = 24 W avg.
Parameter Symbol Min Typ Max Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS =0, ID=200µA) V(BR)DSS 65 —— Vdc
Gate-source Leakage Current (VGS =5V, VDS =0V) IGSS ——4µAdc
Zero Gate Voltage Drain Leakage Current (VDS =28V, VGS =0V) IDSS ——12 µAdc
On Characteristics
Forward Transconductance (VDS =10V, ID=1A) GFS — 9 — S
Gate Threshold Voltage (VDS =10V, ID=400µA) VGS(TH) ——4.8 Vdc
Gate Quiescent Voltage (VDS =28V, ID= 1200 mA) VGS(Q) —3.8 —Vdc
Drain-source On-voltage (VGS =10V, ID=1A) VDS(ON) —0.08 —Vdc
Parameter Symbol Min Typ Max Unit
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS =28V, VGS =0, f=1.0MHz)
(This part is internally matched on both the input and output.)
CRSS —3.0 —pF
Functional Tests (in Agere Systems Supplied Test Fixture)
Common-source Amplifier Power Gain* GPS 14 15 —dB
Drain Efficiency* η—24 — %
Third-order Intermodulation Distortion*
(IMD3 measured over 1.2288 MHz BW @ f1 – 2.5 MHz
and f2 + 2.5 MHz)
IM3 —–34 —dBc
Adjacent Channel Power Ratio*
(ACPR measured over BW of 30 kHz @ f1 – 0.885 MHz
and f2 + 0.885 MHz)
ACPR —–48 —dBc
Input Return Loss* IRL —–10 —dB
Power Output, 1 dB Compression Point
(VDD =28V, fC= 1960.0 MHz) P1dB —125 — W
Output Mismatch Stress
(VDD =28V, POUT = 125 W (CW), IDQ =1250mA, fC= 1960.0 MHz
VSWR = 10:1; [all phase angles])
ψNo degradation in output power.
Agere Systems Inc. 3
Preliminary Data Sheet AGR19125E
April 2004 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Test Circuit Illustrations for AGR19125E
A. Schematic
B. Component Layout
Figure 2. AGR19125E Test Circuit
Parts List:
■Microstrip Line:
Z1 0.785 in. x 0.065 in.
Z2 0.205 in. x 0.065 in.
Z3 0.070 in. x 0.255 in.
Z4 0.378 in. x 0.065 in.
Z5 0.177 in. x 0.860 in.
Z6 0.050 in. x 0.247 in.
Z7 0.050 in. x 0.593 in.
Z8 0.500 in. x 1.030 in.
Z9 0.323 in. x 0.185 in.
Z10 0.465 in. x 0.115 in.
Z11 0 .075 in. x 0.065 in.
Z12 0.252 in. x 0.065 in.
■ATC® chip capacitor:
C1 10 pF 100B100JW500X
C5, C14, C15: 5.6 pF100B5R6BW500X
C9 6.8 pF 100B6R8JW500X
C10 1.2 pF 100B1R2BW500X
C16: 15 pF 100B150JW500X.
■Sprague® tantalum surface-mount chip capacitor:
C2, C4, C11, C12: 22 µF, 35 V.
■Kemet® 1206 size chip capacitor:
C6, C13: 0.1 µF C1206104K5RAC7800.
■Murata® 0805 size chip capacitor:
C8 0.01 µF GRM40X7R103K100A L.
■Johanson Giga-Trim® variable capacitor:
C17 0.6 pF to 4.5 pF 27271SL.
■1206 size chip capacitor: C3, C7: 22000 pF.
■1206 size chip resistor: R1 1 kΩ; R2 560 kΩ; R3 4.7 Ω.
■Fair-Rite® ferrite bead: FB1 2743019447.
■Taconic® ORCER RF-35: board material, 1 oz. cop-
per, 30 mil thickness, εr = 3.5.
DUT
R3
C2
R2
R1
+
C3 C4
+
C5
FB1
Z6
Z1 C1 Z2 Z3 Z4 Z5
Z8 Z9 Z10 Z13
C9C8C7C6
Z7 C13C12C11
+
C10 C14
RF INPUT
VGG
VDD
RF
C16
C15
OUTPUT
+
1
2
3
PINS:
1. DRAIN
2. GATE
3. SOURCE
Z11
C17
4Agere Systems Inc.
125 W, 1930 M Hz —1990 MHz, PCS LDMOS RF Power Transistor April 2004
AGR19125E Preliminary Data Sheet
Typical Performance Characteristics
Figure 3. Series Equivalent Input and Output Impedances
MHz (f ) ZS Ω
(Complex Source Impedance)ZL Ω
(Complex Optimum Load Impedance)
1930 (f1) 4.22 – j6.13 1.63 – j1.42
1960 (f2) 4.02 – j5.80 1.60 – j1.19
1990 (f3) 3.91 – j5.55 1.74 – j1.18
0.1
0.1
0.1
0.2
0.2
0.3
0.3
0.4
0.4
0.5
0.5
0.6
0.6
0.7
0.7
0.8
0.8
0.9
0.9
1.0 1.0
1.2
1.2
1.4
1.4
1.6
1.6
1.8
1.8
2.0
2.0
3.0
3.0
4.0
4.0
5.0
5.0
10
10
10
20
20
20
50
50
50
0.2
0.2
0.2
0.4
0.4
0.4
0.6
0.6
0.6
0.8
0
.8
0.8
1.0
1.0
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
-160
170
-170
180
±
90-90
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.2
0.21
0.22
0.23
0.23
0.24
0.24
0.25
0.25
0.26
0.26
0.27
0.27
0.28
0.29
0.3
0.31
0.32
0.33
0.34
0.35
0.36
0.37
0.38
0.39
0.4
0.41
0.42
0.43
0.44
0.45
0.46
0.47
0.48
0.48
0.49
0.49
0.0
0.0
A
N
G
L
E
O
F
T
R
A
N
S
M
I
S
S
I
O
N
C
O
E
F
F
I
C
I
E
N
T
I
N
D
E
G
R
E
E
S
A
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G
L
E
O
F
R
E
F
L
E
C
T
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O
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F
F
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T
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D
E
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W
A
V
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L
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N
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T
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A
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<
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A
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A
N
C
E
C
O
M
P
O
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E
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T
(
-
j
X
/
Z
o
)
,
O
R
I
N
D
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V
E
S
U
S
C
E
P
T
A
N
C
E
(
-
j
B
/
Y
o
)
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
F
ZL
f3
f1
ZS
f3
f1
Z0 = 10 Ω
DUT
ZSZL
INPUT MATCH OUTPUT MATCH
DRAIN (1)
SOURCE (3)
GATE (2)
Agere Systems Inc. 5
Preliminary Data Sheet AGR19125E
April 2004 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
TEST CONDITIONS:
VDD = 28 V, IDQ = 1250 mA, F = 1960 MHz.
Figure 4. Output Power and Efficiency vs. Input Power
TEST CONDITIONS:
VDD = 28 V, F = 1960 MHz, CW MEASUREMENT.
Figure 5. Power Gain vs. Output Power
0.0
20.0
40.0
60.0
80.0
100.0
120.0
140.0
0.00 1.00 2.00 3.00 4.00 5.00 6.00
P
IN
, INPUT POWER (W)S
P
OUT
, OUT PUT P O WE R (W) ,
EFFI CIENCY ( %)S
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
I RL, I NP UT RETURN LO S S
(dB)S
P
OUT
EFFICIENCY
IRL
12.00
13.00
14.00
15.00
16.00
1.00 10.00 100.00 1000.00
P
OUT
, OUTPUT POWER (W)S
Gps, POWER GAIN (dB)S
I
DQ
= 1500 mA
I
DQ
= 900 mA
I
DQ
= 1250 mA
6Agere Systems Inc.
125 W, 1930 M Hz —1990 MHz, PCS LDMOS RF Power Transistor April 2004
AGR19125E Preliminary Data Sheet
Typical Performance Characteristics (continued)
TEST CONDITIONS:
VDD = 28 V, F = 1960 MHz, 100 kHz TONE SPACING.
Figure 6. Two-Tone Gain vs. Output Power
TEST CONDITIONS:
VDD = 28 V, IDQ = 1250 mA, POUT = 125 W (PEP), 100 kHz TONE SPACING.
Figure 7. Two-Tone Broadband Performance
12
13
14
15
16
10 100 1000
P
OUT
, O UTPUT PO W ER (W) PEPS
Gps, POWER GAIN (dB)S
I
DQ
= 900 mA
I
DQ
= 1250 mA
I
DQ
= 1500 mA
0
5
10
15
20
25
30
35
40
45
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FRE QUE NCY (MHz)S
Gps, POWER GAIN (dB), DRAINS
EFFICIENCY (%) S
-35
-30
-25
-20
-15
-10
-5
0
5
IRL, INPUT RETURN LOSS (dB),
IMD3,S INTERMODULATI ON
DISTORTIONS (dBc)S
EFFICIENCY
IRL
Gps
IMD3
Agere Systems Inc. 7
Preliminary Data Sheet AGR19125E
April 2004 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
TEST CONDITIONS:
VDD = 28 V, F = 1960 MHz, IDQ = 1250 mA, POUT = 125 W (PEP).
Figure 8. Two-Tone Intermodulation Products vs. Tone Spacing
TEST CONDITIONS:
F = 1960 MHz, IDQ = 1250 mA, POUT = 125 W (PEP ), 100 kHz TONE SPA CIN G.
Figure 9. Two-Tone Intermodulation Distortion and Efficiency vs. Drain Supply
-55
-45
-35
-25
100 1000 10000 100000
T ONE S P ACING ( k Hz) S
IMD, I NTERM ODULA T IO N DISTO RTI ON (dB c)S
IMD7
IMD5
IMD3
36
37
38
39
40
41
42
43
44
24 25 26 27 28 29 30
V
DD
, DRAIN SUPPLY (V)S
DRA IN E FF ICI ENCY ( % )S
-35
-30
-25
-20
-15
-10
-5
0
5
IMD3, I NTERM ODULA T IO NS
DISTO RTIO N (dBc)S
EFFICIENCY
IMD3
8Agere Systems Inc.
125 W, 1930 M Hz —1990 MHz, PCS LDMOS RF Power Transistor April 2004
AGR19125E Preliminary Data Sheet
Typical Performance Characteristics (continued)
TEST CONDITIONS:
VDD = 28 V, F = 1960 MHz, 100 kHz TONE SPACING.
Figure 10. Third Order Intermodulation Distortion vs. Output Power
TEST CONDITIONS:
VDD = 28 V, IDQ = 1250 mA, F = 1960 MHz, 100 kHz TONE SPACING.
Figure 11. Intermodulation Distortion Products vs. Output Power
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
10 100 1000
P
OUT
, O UTPUT POW ER (W) PEPS
IMD3, THIRD ORDER INTERMODULATIONS
DISTORTION (dBc)S
I
DQ
= 900 mA
I
DQ
= 1250 mA
I
DQ
= 15 00 mA
-80.0
-70.0
-60.0
-50.0
-40.0
-30.0
-20.0
-10.0
0.0
1.00 10.00 100.00 1000.00
Pout, OUTPUT POWER (WATTS) PEP
IMD, INTERMODULATION DISTORTION (dBc)S
5.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
45.0
50.0
DRAIN EFFICI E NCY ( %)S
EFFICIENCY
3rd O RDE R
5t h O RDER
7th ORDER
Agere Systems Inc. 9
Preliminary Data Sheet AGR19125E
April 2004 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
TEST CONDITIONS:
VDD = 28 V, IDQ = 1250 mA, F1 = 1960 MHz, F2 = 1962.5 MHz.
9 IS-95 CHANNELS/CARRIER, P/A RATIO = 9.72 dB AT 0.01% PROBABILITY.
Figure 12. Two Carrier IS-95 CDMA Performance vs. Output Power
TEST CONDITIONS:
VDD = 28 V, IDQ = 1250 mA, POUT = 24 W, 2 CARRIERS.
2.5 MHz SPACING, P /A RATIO = 9.72 dB AT 0.01%.
Figure 13. Two Carrier CDMA (IS-95) Broadband Performance
0.00
5.00
10.00
15.00
20.00
25.00
30.00
35.00
40.00
1.00 10.00 100.00
POUT, OUTPUT P OWER (W)S
Gps, POWER G AI N ( dB)
DRAINSEFFICIENCY (%)S
-70.0
-60.0
-50.0
-40.0
-30.0
-20.0
-10.0
0.0
IMD3 (dBc), ACPR (dBc)S
EFFICIENCY
IMD3
Gps
ACPR
0
5
10
15
20
25
30
1880 1900 1920 1940 1960 1980 2000 2020 2040
f , F RE Q UE NCY (MHz)S
G ps, POW ER G AI N (dB), DRAINS
EFF I CIENCY (%)S
-55
-45
-35
-25
-15
-5
5
IRL, INPUT RETURN LOSS (dB),
IMD3,S INT ERMODULATI ON
DISTO RTI O N, AND ACPR (dBc)S
EFFICIENCY
IRL
Gps
IMD3
A
CPR
10 Agere Systems Inc.
125 W, 1930 M Hz —1990 MHz, PCS LDMOS RF Power Transistor April 2004
AGR19125E Preliminary Data Sheet
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified. Cut lead indicates drain.
AGR19125EU
AGR19125 EF
Label Notes:
■M before the part number denotes model program . X before the part number denotes engineering prototype.
■The last two letters of the part number denote wafer technology and package type.
■YYWWLL is the date code including place of manufacture: year year work week (YYWW ), LL = location (AL = Allentown, PA; T = Thailand).
XXXXX = fi ve -digit wa fe r l o t n u m b e r.
■ZZZZZZZ = seven-digit assem bly lot number on production parts.
■ZZZZZZZZ ZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineerin g prototypes.
PINS:
1. DRAIN
2. GATE
3. SOURCE
PINS:
1. DRA IN
2. GATE
3. SOURCE
AGERE
M-AGR21125U
YYWWUR
ZZZZZZZ
AGERE
AGR19125XU
YYWWLL XXXXX
ZZZZZZZ
1
2
31
2
3
AGERE
M-AGR21125F
YYWWUR
ZZZZZZZ
1
3
2
AGERE
AGR19125XF
YYWWLL XXXXX
ZZZZZZZ
1
2
3
Copyright © 2004 Agere Systems Inc.
All Rights Reserved
April 2004
DS04-161RFPP (Replaces D S04-035R FPP)
Agere Systems Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application.
Agere is a registered trademark of Agere Systems Inc. Agere Systems and the Agere logo are trademarks of Agere Systems Inc.
Fair-Rite is a registered trademark of Fair-Rite Products Corporation.
Johanson and Giga-Trim are registered trademarks of Johanson Manufacturing Corporation.
ATC is a registered trademark of American Technical Ceramics Corp.
Kemet is a registered trademark of KRC Trade Corporation.
Sprague is a registered trademark of Sprague Electric Company Corporation.
Murata is a registered trademark of Murata Electronics North America, Inc.
Taconic is a registered trademark of Tonoga Limited DBA Taconic Plastics Ltd.
For additional information, contact your Agere Systems Account Manager or the following:
INTERNET: http://www.agere.com
E-MAIL: docmaster@agere.com
N. AMERICA: Agere Systems Inc., Lehigh Valley Central Campus, Room 10A-301C, 1110 American Parkway NE, Allentown, PA 18109-9138
1-800-372-2447, FAX 610-712-4106 (In CANADA: 1-800-553-2448, FAX 610 - 712-4106)
ASIA: Agere Systems Hong Kong Ltd., Suites 3201 & 3210-12, 32/F, Tower 2, The Gateway, Harbour City, Kowloon
Tel. (852) 3129-2000, FAX (852) 3129-2020
CHINA: (86) 21-5 047-1212 (Shanghai), (86) 755-25881122 (Shenzhen)
JAPAN: (81) 3-5421-1600 (Tokyo ), KORE A: ( 82) 2-767-18 50 (Seoul), SINGAPORE: (65 ) 6778-8833, TAIWAN: (886) 2-2725-5858 (Taipei)
EUROPE: Tel. (44) 1344 296 400
125 W, 1930 M Hz —1990 MHz, PCS LDMOS RF Power Transistor April 2004
AGR19125E Preliminary Data Sheet
RF Power Product Information
For product and application information, please visit our website: http://www.agere.com/rfpower.
