LLDB3 AND LLDB3SEL TRIGGER DIODES FEATURES * VBO: 32V/34V/40V VERSIONS * Low Breakover Current LL-34 DESCRIPTION High reliability glass passivation insuring parameter stability and protection against junction contamination .059 (1.50) .055 (1.40) .020 (0.50) .014 (0.35) .138 (3.51) .120 (3.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At T A = 25oC unless otherwise noted) RATING Repetitive Peak On-State Current tp=20uA,F=100Hz Power Dissipation (@ T A=50 oC) SYMBOL VALUE ITRM 2 A 150 mW 4.0 mW/ o C P Derate Above +50 oC Storage Temperature Range T STG Junction Temperature UNITS -40 to + 125 o C 125 o C TJ o ELECTRICAL CHARACTERISTICS (At TA = 25 C unless otherwise noted) RATING Breakover Voltage(Forward and Reverse) at IBO,C=22nF** VALUE SYMBOL VBO LLDB3 UNITS LLDB3SEL Min Max Min Max 30 34 28 36 Volts Volts Maximum Breakover Voltage Symmetry delta V BO= +V BO - -VBO C=22nF delta VBO +/-2 Minimum Dynamic Breakover Voltage delta I=IBO to IF =10mA (see Fig3) delta V+/- 5 Volts Minimum Output Voltage* (see Fig 2) VO 5 Volts Peak Breakover Current at Breakorver Voltage* C=22nF** IBO 100 25 Rise Time* (see Fig3) tr 1.5 Leakage Current* VB=0.5VBO max (see Fig1) IB 10 NOTES: 1. *Electrical characteristic applicable in both forward and reverse derections. 2.**Connected in parallel with the devices. 3. "Fully ROHS compliant", "100% Sn plating (Pb-free)". uA uS uA 2008-02 RATING AND CHARACTERISTICS CURVES ( LLDB3 AND LLDB3SEL ) 10k + IF D.U.T 500k 220V 50Hz Vo 0.1uF R = 20 10mA IBO IB -V +V 0.5 VBO FIG.2 Test circuit for output voltage V VBO Ip 90 % - IF 10 % FIG.1 Current-voltage characteristics tr FIG.3 Test circuit see Fig.2 Adjust R for Ip=0.5A RATING AND CHARACTERISTICS CURVES ( LLDB3 AND LLDB3SEL ) 1.08 140 1.06 VBO (TJ) VBO (TJ=25OC) 120 100 80 60 1.04 1.02 40 20 0 20 40 60 80 100 120 140 150 1.00 25 50 O AMBIENT TEMPERATURE, ( C) 75 F=100Hz TJ initial= 25 OC 1.0 0.1 10 125 FIG.5 RELATIVE VARIATION OF VBO VERSUS JUNCTION TEMPERATURE (TYPICAL VALUES) 2.0 0.01 100 JUNCTION TEMPERATURE, (OC) FIG.4 POWER DISSPATION VERSUS AMBIENT TEMPERATURE (MAXIMUM VALUES) ITRM, PEAK PULSE CURRENT (A) POWER DISSIPATION, (mW) 160 100 1000 10000 tp, PULSE DURATION (uS) FIG.6 PEAK PULSE CURRENT VERSUS PULSE DURATION (MAXIMUM VALUES) DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures.