SBT80-06JS Ordering number : ENA1523 SANYO Semiconductors DATA SHEET SBT80-06JS Schottky Barrier Diode (Twin Type * Cathode Common) 60V, 8A Rectifier Applications * High frequency rectification (switching regulators, converters, choppers). Features * * * * * * Guaranteed up to Tj=150C. Low forward voltage (VF max=0.58V). Short reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure. Attachment workability is good by Mica-less package. Specifications Absolute Maximum Ratings at Ta=25C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Symbol Conditions Ratings Unit VRRM VRSM 60 50Hz resistive load, sine wave Tc=109C V 66 V 8 A Surge Forward Current IO IFSM 80 A Junction Temperature Tj --55 to +150 C Storage Temperature Tstg --55 to +150 C 50Hz sine wave, 1 cycle Electrical Characteristics at Ta=25C Parameter Reverse Voltage Forward Voltage Reverse Current Symbol VR VF IR Conditions IR=1mA, Tj=25C * IF=3.0A, Tj=25C * VR=30V, Tj=25C * Note) * : Value per element Ratings min typ max 60 Unit V 0.58 V 0.1 mA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 72209SD TK IM TC-00002023 No. A1523-1/3 SBT80-06JS Continued from preceding page. Parameter Symbol Interterminal Capacitance C Thermal Resistance Rth(j-c) Ratings Conditions min typ VR=10V, Tj=25C * Junction-Case : Smoothed DC Unit max 130 pF 5.0 C / W Note) * : Value per element Package Dimensions Electrical Connection unit : mm (typ) 7525-001 1 10.0 3 4.5 3.2 1 : Anode 2 : Cathode 3 : Anode 7.2 3.5 2.8 3.6 16.0 2 1.6 14.0 1.2 0.75 1 2 3 0.7 2.4 1 : Anode 2 : Cathode 3 : Anode 2.55 SANYO : TO-220ML(LS) 2.55 IF -- VF 2 Represented by max 5 Reverse Current, IR -- mA 7 Forward Current, IF -- A 7 C 150 C 25 Tj= 10 5 3 2 1.0 7 5 3 2 0.5 1.0 2 10 C 125 7 5 typ C 100 3 2 (1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180 8 6 4 (4) (3) (2) (1) Rectangular wave 360 Sine wave 2 180 360 0 1 2 3 4 5 6 7 10 20 typ 8 Average Output Current, IO -- A 9 10 IT08387 30 40 50 60 Reverse Voltage, VR -- V IT08385 PF(AV) -- IO 10 7 5 0 1.5 Average Reverse Power Dissipation, PR(AV) -- W 0 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W max 0C 5 1 Tj= typ C 150 3 1.0 0.1 0 IR -- VR 100 PR(AV) -- VRM 4.5 3.5 (1)Rectangular wave =300 (2)Rectangular wave =240 (3)Rectangular wave =180 (4)Sine wave =180 3.0 Rectangular wave 4.0 (1) (2) VR 2.5 (3) 360 2.0 1.5 70 IT08386 Sine wave (4) VR 1.0 180 360 0.5 0 PR max at Tj=150C 0 10 20 30 40 50 Peak Reverse Voltage, VRM -- V 60 70 IT08388 No. A1523-2/3 SBT80-06JS Tc -- IO 170 140 130 120 Rectangular wave 110 (4) 100 (2) (1) 360 (3) Sine wave 90 80 360 0 1 2 3 4 5 6 7 8 Average Output Current, IO -- A IFSM -- t 120 9 2 100 7 100 20ms t 60 40 20 7 0.01 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 2 3 ID01009 2 3 5 7 2 10 3 5 7 100 IT08495 2 3 5 7 10 ID01010 Reverse Voltage, VR -- V IT08389 IS 80 5 1.0 10 Current waveform 50Hz sine wave Tj=150C 0 3 180 70 Surge Forward Current, IFSM(Peak) -- A Interterminal Capacitance, C -- pF 150 f=100kHz Transient Thermal Resistance, Rth(j-c) -- C / W Case Temperature, Tc -- C 160 C -- VR 5 (1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180 Rth(j-c) -- t 10 7 5 3 2 1.0 7 5 3 0.001 2 3 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 Time, t -- s SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2009. Specifications and information herein are subject to change without notice. PS No. A1523-3/3