Bridge Diode Dual In-Line Package OUTLINE S1NBB80 Unit : mm Weight : 0.29g typ. Package1NA 6.8 800V 1A Type No. * DIP * 3.4mm Class S1NBB 8000 10 - Date code Feature * Small-DIP * Pin-distance 3.4mm for isolation 2.6 Unit : mm Weight : 0.29gtyp. Package1NA 6.8 Type No. Class SINBB 8000 - 6.5 Date code 2.5 4.4 Web 'PSEFUBJMTPGPVUMJOFEJNFOTJPOT SFGFSUPPVSXFCTJUFPSUIF4FNJDPOEVDUPS 4IPSU'PSN$BUBMPH"TGPSUIFNBSLJOH SFGFSUPUIFTQFDJaDBUJPOi.BSLJOH 5FSNJOBM$POOFDUJPOu RATINGS Absolute Maximum Ratings Tl = 25unless otherwise speci Storage Temperature Operation Junction Temperature Maximum Reverse Voltage Forward Voltage Reverse Current Thermal Resistance S1NBB80 Unit Tstg -40150 Tj 150 800 V VRM Average Rectified Forward Current Peak Surge Forward Current Current Squared Time IO IFSM 2 It 50Hz 50Hz sine wave, Resistance load 1 Ta25 *2 0.84 jl IF = 0.5A, Pulse measurement, per diode VR =VRM, Pulse measurement, per diode Junction to Lead ja Junction to Ambient VF IR A 50 A 6 A2s Electrical Characteristics Tl = 25unless otherwise speci 2 *2101mm On glass-epoxy substrate, copper soldering pad area 101mm2 J534 Ta26 *1 50Hz Tj = 25 50Hz sine wave, Non-repetitive 1cycle peak value, Tj = 25 1mst10msTj =25 per diode 2 *1324mm On glass-epoxy substrate, copper soldering pad area 324mm2 22 Type No. Symbol Conditions Item MAX 1.05 MAX 10 MAX 15 *1 MAX 68 *2 MAX 84 V A /W Small DIP Bridge S1NBB80 CHARACTERISTIC DIAGRAMS Sine wave 50Hz )[TJOFXBWFJTVTFEGPSNFBTVSFNFOUT Typical 4FNJDPOEVDUPSQSPEVDUTHFOFSBMMZIBWFDIBSBDUFSSJTUJDWBSJBUJPO 5ZQJDBMJTBTUBUJTUJDBMBWFSBHFPGUIFEFWJDFhTBCJMJUZ J534 23 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Shindengen: S1NBB80-7062 S1NBB80-7101 S1NBB80-7102