VISHAY
BFQ67F
Document Number 85097
Rev. 1.3, 24-Aug-04
Vishay Semiconductors
www.vishay.com
1
2
1
3
Electrostatic sensitive device.
Observe precautions for handling.
16867
Silicon NPN Planar RF Transistor
Description
The main purpose of this bipolar transistor is broad-
band amplification up to 2 GHz. In the space-saving
3-pin surface-mount SOT-490 package electrical per-
formance and reliability are taken to a new level cov-
ering a smaller footprint on PC boards than previous
packages. In addition to space savings, the SOT-490
provides a higher level of reliability than other 3-pin
packages, such as more resistance to moisture. Due
to the short length of its leads the SOT-490 is also
reducing package inductances resulting in some bet-
ter electrical performance. All of these aspects make
this device an ideal choice for demanding RF applica-
tions.
Features
• Low noise figure
• High transition frequency
• High power gain
• Small feedback capacitance
• Flat-lead SMD package
Applications
Low noise small signal broadband applications, such
as in satellite TV tuners, RF modules for wireless and
mobile communications up to 2 GHz.
Mechanical Data
Typ: BFQ67F
Case: SOT-490 Plastic case
Weight: approx. 2.5 mg
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Part Marking Package
BFQ67F V2 SOT-490
Parameter Test condition Symbol Value Unit
Collector-base voltage VCBO 20 V
Collector-emitter voltage VCEO 10 V
Emitter-base voltage VEBO 2.5 V
Collector current IC50 mA
Total power dissipation Tamb ≤ 60 °C Ptot 200 mW
Junction temperature Tj150 °C
Storage temperature range Tstg - 65 to + 150 °C
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Document Number 85097
Rev. 1.3, 24-Aug-04
VISHAY
BFQ67F
Vishay Semiconductors
Maximum Thermal Resistance
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Thermal resistance junction
ambient
1) RthJA 450 K/W
Parameter Test condition Symbol Min Ty p. Max Unit
Collector-emitter cut-off current VCE = 20 V, VBE = 0 ICES 100 µA
Collector-base cut-off current VCB = 15 V, IE = 0 ICBO 100 nA
Emitter-base cut-off current VEB = 1 V, IC = 0 IEBO 1µA
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0 V(BR)CEO 10 V
Collector-emitter saturation
voltage
IC = 50 mA, IB = 5 mA VCEsat 0.1 0.4 V
DC forward current transfer ratio VCE = 5 V, IC = 15 mA hFE 65 100 150
VISHAY
BFQ67F
Document Number 85097
Rev. 1.3, 24-Aug-04
Vishay Semiconductors
www.vishay.com
3
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Package Dimensions in mm
Parameter Test condition Symbol Min Typ. Max Unit
Transition frequency VCE = 8 V, IC = 15 mA,
f = 500 MHz
fT7.5 GHz
Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 0.4 pF
Collector-emitter capacitance VCE = 8 V, f = 1 MHz Cce 0.2 pF
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 0.85 pF
Noise figure VCE = 8 V, ZS = ZSopt,
f = 800 MHz, IC = 5 mA
F1.2dB
VCE = 8 V, ZS = 50 Ω, f = 2 GHz,
IC = 5 mA
F2.5dB
Power gain VCE = 8 V, ZS = 50 Ω, ZL = ZLopt,
IC = 15 mA, f = 800 MHz
Gpe 16 dB
VCE = 8 V, ZS = 50 Ω, ZL = ZLopt,
IC = 15 mA, f = 2 GHz
Gpe 8.5 dB
Transducer gain VCE = 8 V, IC = 15 mA,
f = 800 MHz, ZO = 50 Ω
|S21e|215 dB
Linear output voltage - two tone
intermodulation test
VCE = 8 V, IC = 15 mA,
dIM = 60 dB, f1 = 806 MHz,
f2 = 810 MHz, ZS = ZL = 50 Ω
V1 = V2160 mV
Third order intercept point VCE = 8 V, IC = 15 mA,
f = 800 MHz
IP326 dBm
16866
ISO Method E
0.4 (0.016)
0.5(0.016)
0.65(0.026)
1.15(0.045)
0.1 B
0.1 A
1.5 (0.059)
1.7 (0.066)
0.6 (0.023)
0.8 (0.031)
3 x 0.20 (0.008)
3 x 0.30 (0.012)
1.5 (0.059)
1.7 (0.066)
0.75 (0.029)
0.95 (0.037)
0.10 (0.004)
0.20 (0.008)
0.5 (0.016)
1.0 (0.039)
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Document Number 85097
Rev. 1.3, 24-Aug-04
VISHAY
BFQ67F
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
