
Features
n RoHS compliant*
n Protects one or two lines
n Unidirectional and bidirectional
configurations
n ESD protection 30 kV max.
Applications
n RS-232, RS-422 and RS-423 data lines
n Portable electronics
n Wireless bus protection
n Control and monitoring systems
Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted)
CDSOT23-T03~T36C - TVS Diode Array Series
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
General Information
Portable communications, computing and video equipment manufacturers are challenging
the semiconductor industry to develop increasingly smaller electronic components.
Bourns oers Transient Voltage Suppressor Array diodes for surge and ESD protection
applications, in compact chip package SOT23 size format. The TransientVoltage Supressor
Array series oers a choice of voltage types ranging from 3 V to 36 V. Bourns® Chip Diodes
conform to JEDEC standards, are easy to handle on standard pick and place equipment
and their at conguration minimizes roll away.
The Bourns device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC 61000-4-5
(Surge) requirements.
Parameter Symbol Value Unit
Operating Temperature TJ-55 to +150 ºC
Storage Temperature TSTG -55 to +150 ºC
Notes: 1. See Pulse Wave Form. 3. Only applies to unidirectional devices.
2. See Peak Pulse Power vs. Pulse Time. 4. Part numbers with a “C” sux are bidirectional devices, i.e., CDSOT23-T03C.
*RoHS COMPLIANT
LEAD FREE
*RoHS COMPLIANT
VERSIONS
AVAILABLE
LEAD FREE
VERSIONS ARE
RoHS COMPLIANT*
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter Symbol
CDSOT23-
UnitUni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi-
T03 T03C T05 T05C T08 T08C T12 T12C T15 T15C T24 T24C T36 T36C
Breakdown Voltage @ 1 mA VBR 4.0 6.0 8.5 13.3 16.7 26.7 40.0 V
Working Peak Voltage VWM 3.3 5.0 8.0 12.0 15.0 24.0 36.0 V
Maximum Clamping Voltage
VC @ IP = 1 A (1) VF7.0 9.8 13.4 19.0 24.0 43.0 51.0 V
Maximum Clamping Voltage
@ 8/20 µs VC = IPP (1) VF10.9 V
@ 43 A
13.5 V
@ 42 A
16.9 V
@ 34 A
25.9 V
@ 21 A
30.0 V
@ 17 A
49.0 V
@ 12 A
76.8 V
@ 9 A V
Maximum Leakage Current
@ VWM ID125 20 10 2 1 1 1 µA
Typical Capacitance - Unidirectional
@ 0 V, 1 MHz Cj(SD) 500 350 250 150 100 88 80 pF
Typical Capacitance - Bidirectional
@ 0 V, 1 MHz Cj(SD) 300 210 150 90 60 63 60 pF
ESD Protection (per IEC 61000-4-2)
Contact - Min.
Contact - Max.
Air - Min.
Air - Max.
ESD
±8
±30
±15
±30
kV
Peak Pulse Power (tp @ 8/20 µs) (2) PPP 500 W
Forward Voltage @ 100 mA,
300 µs - Square Wave (3) VF1.5 V
3
1
2
3
1
2
E2801L