LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
FEATURES
* Response time
( tr : TYP. 3µs at VCE = 10V, IC = 2mA, RL = 100Ω )
* Current transfer ratio
( CTR : MIN. 20% at IF = 10mA, VCE = 10V )
* Input-output isolation voltage
4N25 series : Viso = 2,500Vrms
4N26 series : Viso = 1,500Vrms
* Dual-in-line package :
4N25, 4N26
* Wide lead spacing package :
4N25M, 4N26M
* Surface mounting package :
4N25S, 4N26S
* Tape and reel packaging :
4N25S-TA1, 4N26S-TA1
* UL approved ( No. E113898 )
* TUV approved ( No. R9653630 )
* DEMKO approved ( No. 303985 )
Part No. : 4N25 / 4N26 ( M, S, -TA1 ) Page : 1 of 10
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
4N25 :
4N26 :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
Part No. : 4N25 / 4N26 ( M, S, -TA1 ) Page : 2 of 10
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
4N25M :
4N26M :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
Part No. : 4N25 / 4N26 ( M, S, -TA1 ) Page : 3 of 10
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
4N25S :
4N26S :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
Part No. : 4N25 / 4N26 ( M, S, -TA1 ) Page : 4 of 10
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
TAPING DIMENSIONS
4N25S-TA1 , 4N26S-TA1 :
Description Symbol Dimensions in mm ( inches )
Tape wide W 16 ± 0.3 ( .63 )
Pitch of sprocket holes P0 4 ± 0.1 ( .15 )
Distance of compartment F
P2 7.5 ± 0.1 ( .295 )
2 ± 0.1 ( .079 )
Distance of compartment to compartment P1 12 ± 0.1 ( .472 )
Part No. : 4N25 / 4N26 ( M, S, -TA1 ) Page : 5 of 10
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
ABSOLUTE MAXIMUM RATING
( Ta = 25°C )
PARAMETER SYMBOL RATING UNIT
Forward Current IF 80 mA
Reverse Voltage VR 6 V
INPUT
Power Dissipation P 150 mW
Collector - Emitter Voltage VCEO 30 V
Emitter - Collector Voltage VECO 7 V
Collector - Base Voltage VCBO 70 V
Collector Current IC 100 mA
OUTPUT
Collector P ower Dissipation PC 150 mW
T otal Power Dissipation Ptot 250 mW
4N25 series 2,500
*1 Isolation Voltage 4N26 series Viso 1,500 Vrms
Operating Temperature Topr -55 ~ +100 °C
Storage Temperature Tstg -55 ~ +150 °C
*2 Soldering Temperature Tsol 260 °C
*1. AC For 1 Minute, R.H. = 40 ~ 60%
Isolation voltage shall be measured using the following method.
(1) Short between anode and cathode on the primary side and between collector,
emitter and base on the secondary side.
(2) The isolation voltage tester with zero-cross circuit shall be used.
(3) The waveform of applied voltage shall be a sine wave.
*2. For 10 Seconds
Part No. : 4N25 / 4N26 ( M, S, -TA1 ) Page : 6 of 10
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
ELECTRICAL - OPTICAL CHARACTERISTICS
( Ta = 25°C )
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Forward Voltage VF — 1.2 1.5 V IF=10mA
Reverse Current IR — — 10
µA VR=4V
INPUT
Terminal Capacitance Ct — 50 — pF V=0, f=1KHz
Collector Dark Current ICEO — — 50 nA VCE=10V, IF=0
Collector-Emitter
Breakd own Voltage BVCEO 30 — — V
IC=0.1mA
IF=0
Emitter-Collector
Breakd own Voltage BVECO 7 — — V
IE=10µA
IF=0
OUTPUT
Collector-Base
Breakd own Voltage BVCBO 70 — — V
IC=0.1mA
IF=0
Collector Current IC 2 — — mA
* Current Transfer Ratio CTR 20 — — %
IF=10mA
VCE=10V
Collector-Emitter
Saturation Voltage VCE(sat) — 0.1 0.5 V
IF=50mA
IC=2mA
Isolation Resistance Riso 5×1010 1×1011 — Ω DC500V
40 ~ 60% R.H.
Floating Capacitance Cf — 1 — pF V=0, f=1MHz
Response Time (Rise) tr — 3 —
µs
TRANSFER
CHARACTERISTICS
Response Time (Fall) tf — 3 —
µs
VCE=10V, IC=2mA
RL=100Ω
* CTR I
I100%
C
F
=×
Part No. : 4N25 / 4N26 ( M, S, -TA1 ) Page : 7 of 10
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
CHARACTERISTICS CURVES
Fig.1 Forward Current vs. Ambie nt Fig.2 Collector Po wer Dissipat ion vs .
Ambient Temperat ure
Fig.3 Forward Current vs. Forward
F
FF
60
80
40
100
20
0
-55 0 25 50 75 125100 100 125755025
0
-55
0
50
100
150
200
500
10
1
200
100
50
20
2
5
3.02.52.01.51.00.50
10
100k
R =
155
5020
F
20mA
10mA
5mA
Pc(MAX.)
I = 40mA
T a= 25 C
Ta= 25 C
V = 10V
15
10
5
00
52101
50
0
40
30
20
CE
F
Collector-emitter Voltage
Fig.5 Collector Current vs.
Fig.4 Current Transfer Ratio vs. Forward
-25 -25
0.1 0.2 0.5 100
10
30mA
Ambient temperature Ta ( C)
Forward voltage V (V)
Collector-emitter voltage V (V)
Forward current I (mA)
Ambient temperature T a ( C)
Forward current I (mA)
Collector power dissipation Pc (mW)
Forward current I (mA)
Current Transfer ratio CTR (%)
Collector current Ic (mA)
Current
Temperature
Fig.6 Relative Cur rent Transfer Ratio
vs. Ambient Temperature
300
200
100
0
-55 0 25 50 75 100
I = 10mA
V = 10V
F
-25
Relative current transfer ratio (%)
Ambient temperature T a ( C)
o
o
o
Voltage
o
o
oo
o
o
o
Part No. : 4N25 / 4N26 ( M, S, -TA1 ) Page : 8 of 10
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
CHARACTERISTICS CURVES
Fig.7 Collector-emitter Saturation Voltage vs. Fig.8 Collector Dark Current vs.
Ambient Temperature
Fig.9 Response Time vs. Load Resistance Fig.10 Frequency Response
Fig.11 Col lecto r-e mitte r Saturation
Voltage vs. Forward Current
1007550250-55
0
0.1
-25 -55
-6
10
-7
10
-8
10
-9
10
-10
10
10
0204060 125
0
-200.5 1 2 5 10 20 50 100
6
5
4
3
2
1
00 5 10 15 20 25
Ic=0.5mA
1mA
2mA
Ta= 25 C
R = 10k
L 1k 100
V = 5V
Ic= 2mA
Ta= 25 C
V = 10V
Ambient Temperature
10
-12
-13
10
-15
-10
-5
5
200 500
5mA
3mA
0.3
0.2
-25 100
5
5
5
5
5
5
0.5
0.2
0.1 105
ts
td
tf tr
Ta= 25 C
Ic= 2mA
V = 10V
210.50.20.10.05
1
2
5
10
20
50
100
20 50
30
7
7mA
Response time ( s)
Voltage gain Av (dB)
Ambient temperature T a ( C) Ambient temperature T a ( C)
Fre quency f (kHz)
5
O
OO
O
O
Input Output
Input
Output
Vcc
td
tr tf
ts
90%
10%
Output
Vcc
Test Circuit for Response Time
Test Circuit for Frequency Response
IF=50mA
IC=2mA
Load resistance RL(k )
Forward current IF(mA)
Collector dark current I
CEO
(A)
Collector-emitter saturation voltage
V
CE(
sat)(V)
Collector-emitter saturation voltage
V
CE(
sat)(V)
RL
RD
RDRL
Part No. : 4N25 / 4N26 ( M, S, -TA1 ) Page : 9 of 10
BNS-OD-C131/A4
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD)
Unit : mm
Part No. : 4N25 / 4N26 ( M, S, -TA1 ) Page : 10 of 10
BNS-OD-C131/A4
