ky SGS-THOMSON Sf StS THOMSON BDY90/1/2 HIGH CURRENT, HIGH SPEED TRANSISTORS DESCRIPTION The BDY90, BDY91, BDY92 are silicon multiepi- taxial planar NPN transistors in Jedec TO-3 metal case intended for use in switching and linear appii- cations in military and industrial equipment. INTERNAL SCHEMATIC DIAGRAM c B NPN fo OHI E ABSOLUTE MAXIMUM RATINGS Value Symbol Parameter Unit BDY90 | BDY91 | BDY92 Voso Collector-base Voltage (le = 0) 120 100 80 Vv Voev Collector-emitter Voltage (Vgc = 1.5 V) 120 100 80 Vv Voeo Collector-emitter Voltage (Ip = 0) 100 80 60 Vv VeEBo Emitter-base Voltage (Ic = 0) 6 Vv lo Collector Current 10 A lem Collector Peak Current 15 A lg Base Current 2 A Prot Total Power Dissipation at Tease < 25 C 60 Ww Tstg Storage Temperature 65 to 175 C T, Junction Temperature 175 C December 1988 1/2 241sew lower Yo rahe THERMAL DATA Rth j-case Thermal Resistance Junction-case Max 2.5 ELECTRICAL CHARACTERISTICS (T.,5 = 25 unless otherwise specified) _| ecw | Symbol Parameter Test Conditions Min. Typ. Max. Unit lcBo Collector Cutoff Current Vee = Voso 1 mA (le = 0) Icey Collector Cutoff Current Voce = Vcev 1 mA (Vee =- 1.5 V) Tease = 150 C Vce = Vcev 3 mA leso Emitter Cutoff Current Ven =<6V 1 mA (Ic = 0) Vceotsus)| Collector-emitter Sustaining Io = 100 mA Voltage (Ip = 0) for DBY90 120 v for BDY91 100 V for BDY92 80 Vv Veceisaty | Collector-emitter Saturation Ic =5A Ip =0.5A 0.5 Vv Voltage lo =10A Ip=tA for BDY90, BDY91 15 Vv for BDY92 1 Vv Vpe(saty | Base-emitter Saturation Ic =5A Ip =0.5A Vv Voltage lc =10A Ip =1A Vv Hre* DC current Gain lc =1A Vee =2V 30 Ic =5A Vee =5V 30 120 Ic =10A Vee =5V 20 fr Transition Frequency Ic =05A Voe = 5 V 70 MHz f = 5 MHz ton Turn-on Time Ic =5A lg, =O5A 0.35 us Veco = 30 V ts Storage Time Ic =5A lg; =-le2 =O05A 1.3 us ti Fall Time Vee =30V 0.2 us * Pulsed : pulse duration = 300us, duty cycle < 2%. 2/2 242 ka7 SGS-THOMSON vs Sopartucrnomes