1
Transistors
Publication date: March 2003 SJC00100CED
2SC1317, 2SC1318
Silicon NPN epitaxial planar type
For low-frequency power amplification and driver amplification
Complementary to 2SA0719 and 2SA0720
■Features
•Low collector-emitter saturation voltage VCE(sat)
•Complementary pair with 2SA0719 and 2SA0720
■Absolute Maximum Ratings Ta = 25°C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Parameter Symbol Rating Unit
Collector-base voltage 2SC1317 VCBO 30 V
(Emitter open) 2SC1318 60
Collector-emitter voltage 2SC1317 VCEO 25 V
(Base open) 2SC1318 50
Emitter-base voltage (Collector open) VEBO 7V
Collector current IC0.5 A
Peak collector current ICP 1A
Collector power dissipation PC625 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage 2SC1317 VCBO IC = 10 µA, IE = 030V
(Emitter open) 2SC1318 60
Collector-emitter voltage 2SC1317 VCEO IC = 10 mA, IB = 025V
(Base open) 2SC1318 50
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 07V
Collector-base cutoff current (Emitter open)
ICBO VCB = 20 V, IE = 0 0.1 µA
Forward current transfer ratio *1hFE1 *2VCE = 10 V, IC = 150 mA 85 340
hFE2 VCE = 10 V, IC = 500 mA 40
Collector-emitter saturation voltage *1VCE(sat) IC = 300 mA, IB = 30 mA 0.35 0.60 V
Base-emitter saturation voltage *1VBE(sat) IC = 300 mA, IB = 30 mA 1.1 1.5 V
Transition frequency fT
V
CB
= 10 V, I
E
= −50 mA, f = 200 MHz
200 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 6 15 pF
(Common base, input open circuited)
5.0
±0.2
0.7
±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
123
+0.6
–0.2
4.0
±0.2
5.1
±0.2
12.9
±0.5
2.3
±0.2
0.7
±0.2
■Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank Q R S
hFE1 85 to 170 120 to 240 170 to 340
2SC1317, 2SC1318
2SJC00100CED
PC TaIC VCE IC IB
VCE(sat) ICVBE(sat) IChFE IC
fT IECob VCB VCER RBE
0 16040 12080
0
800
600
200
400
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(°C)
020164128
0
0.8
0.6
0.2
0.5
0.7
0.4
0.1
0.3
T
a
= 25°C
I
B
= 10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
0108264
0
0.8
0.6
0.2
0.5
0.7
0.4
0.1
0.3
V
CE
= 10 V
T
a
= 25°C
Base current I
B
(mA)
Collector current I
C
(A)
0.01 0.1 1 10
0.01
0.1
1
10
100 IC / IB = 10
Ta = 75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(A)
0.01 0.1 1 10
0.01
0.1
1
10
100 IC / IB = 10
Ta = 75°C
−25°C
25°C
Base-emitter saturation voltage VBE(sat) (V)
Collector current IC (A)
0.01 0.1 1 10
0
300
250
200
150
100
50
V
CE
= 10 V
T
a
= 75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(A)
−1−10 −100
0
240
200
160
120
80
40
VCB = 10 V
Ta = 25°C
Transition frequency fT (MHz)
Emitter current IE (mA)
1 10 100
0
12
10
8
6
4
2
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector-base voltage V
CB
(V)
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
1 10 100 1 000
0
120
100
80
60
40
20
IC = 2 mA
Ta = 25°C
2SC1317
2SC1318
Base-emitter resistance RBE (kΩ)
Collector-emitter voltage
(Resistor between B and E) VCER (V)
2SC1317, 2SC1318
3
SJC00100CED
ICEO TaSafe operation area
0 20016040 12080
1
10
10
2
10
3
10
4
V
CE
= 10 V
Ambient temperature T
a
(°C)
I
CEO
(T
a
)
I
CEO
(T
a
= 25°C)
0.1 1 10 100
0.001
0.01
0.1
1
10 Single pulse
T
a
= 25ºC
t = 10 ms
t = 1 s
DC
I
CP
I
C
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
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and semiconductors described in this material
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the latest specifications satisfy your requirements.
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mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
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Even when the products are used within the guaranteed values, take into the consideration of
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2002 JUL
