Transistors 2SC1317, 2SC1318 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SA0719 and 2SA0720 4.00.2 5.10.2 5.00.2 * Low collector-emitter saturation voltage VCE(sat) * Complementary pair with 2SA0719 and 2SA0720 0.70.2 Features 12.90.5 0.70.1 Absolute Maximum Ratings Ta = 25C Collector-base voltage (Emitter open) 2SC1317 Symbol Rating Unit VCBO 30 V 2SC1318 0.45+0.15 -0.1 0.45+0.15 -0.1 2.5+0.6 -0.2 2.5+0.6 -0.2 60 25 V Collector-emitter voltage 2SC1317 (Base open) 2SC1318 VCEO Emitter-base voltage (Collector open) VEBO 7 Collector current IC 0.5 A Peak collector current ICP 1 A Collector power dissipation PC 625 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C 1 2 3 2.30.2 Parameter 50 V 1: Emitter 2: Collector 3: Base TO-92-B1 Package Electrical Characteristics Ta = 25C 3C Parameter Symbol Collector-base voltage (Emitter open) 2SC1317 Collector-emitter voltage (Base open) 2SC1317 Conditions IC = 10 A, IE = 0 VCBO 2SC1318 IC = 10 mA, IB = 0 VCEO VEBO IE = 10 A, IC = 0 Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 Collector-emitter saturation voltage Base-emitter saturation voltage *1 Transition frequency 30 Unit V 25 V 7 V 0.1 A 340 hFE1 *2 VCE = 10 V, IC = 150 mA 85 hFE2 VCE = 10 V, IC = 500 mA 40 VCE(sat) IC = 300 mA, IB = 30 mA 0.35 0.60 V VBE(sat) IC = 300 mA, IB = 30 mA 1.1 1.5 V VCB = 10 V, IE = -50 mA, f = 200 MHz 200 fT Collector output capacitance (Common base, input open circuited) Max 50 Emitter-base voltage (Collector open) *1 Typ 60 2SC1318 Forward current transfer ratio *1 Min VCB = 10 V, IE = 0, f = 1 MHz Cob 6 MHz 15 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 Publication date: March 2003 SJC00100CED 1 2SC1317, 2SC1318 PC Ta IC VCE 400 200 IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 0.6 0.5 4 mA 0.4 3 mA 0.3 2 mA 0.2 1 mA 0.1 80 120 0 160 0 Ambient temperature Ta (C) 4 Base-emitter saturation voltage VBE(sat) (V) Collector-emitter saturation voltage VCE(sat) (V) Ta = 75C 25C -25C 0.1 1 0.3 0.2 0 20 0 25C Ta = 75C -25C 0.1 0.1 1 200 160 120 80 40 -100 Collector output capacitance C (pF) (Common base, input open circuited) ob VCB = 10 V Ta = 25C Ta = 75C 200 25C -25C 150 100 50 10 VCER RBE 4 2 IC = 2 mA Ta = 25C 100 80 60 2SC1318 40 2SC1317 20 0 10 Collector-base voltage VCB (V) SJC00100CED 1 120 6 1 0.1 Collector current IC (A) 8 0 10 250 0 0.01 10 IE = 0 f = 1 MHz Ta = 25C 10 8 VCE = 10 V Collector current IC (A) 12 6 hFE IC Cob VCB Emitter current IE (mA) 4 300 1 fT I E -10 2 Base current IB (mA) IC / IB = 10 0.01 0.01 10 240 Transition frequency fT (MHz) 16 10 Collector current IC (A) 0 -1 0.4 VBE(sat) IC 0.1 0.01 0.01 12 100 IC / IB = 10 10 1 0.5 Collector-emitter voltage VCE (V) VCE(sat) IC 100 8 Forward current transfer ratio hFE 40 0.6 0.1 Collector-emitter voltage (V) (Resistor between B and E) VCER 0 VCE = 10 V Ta = 25C 0.7 Collector current IC (A) 600 0.8 Ta = 25C 0.7 0 2 IC I B 0.8 Collector current IC (A) Collector power dissipation PC (mW) 800 100 1 10 100 1 000 Base-emitter resistance RBE (k) 2SC1317, 2SC1318 ICEO Ta 104 Safe operation area Collector current IC (A) ICEO (Ta) ICEO (Ta = 25C) 103 102 10 1 10 VCE = 10 V 0 40 80 120 160 Ambient temperature Ta (C) 200 Single pulse Ta = 25C ICP 1 t = 10 ms IC t=1s DC 0.1 0.01 0.001 0.1 1 10 100 Collector-emitter voltage VCE (V) SJC00100CED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL