REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Change to one part - one part number format. Add device type 02. Add vendor CAGE 01295 for device type 02. Add characterization for device classes B, S, Q, and V. Add ground bounce and latch-up changes to table I. Editorial changes throughout 93-01-15 Monica L. Poelking B Change the power dissipation capacitance parameters in table I. 93-04-14 Monica L. Poelking C Technical and editorial changes throughout. Add RHA requirements. - CS 97-11-05 Monica L. Poelking D Add device type 03. Add vendor CAGE F8859. Add case outline X. Add radiation features for device type 01. Update boilerplate to MIL-PRF-38535 requirements. - jak 02-07-03 Thomas M. Hess E Add radiation features for device type 03 in section 1.5. Update the boilerplate to include radiation hardness assured requirements for device type 03. Editorial changes throughout. - jak 04-05-05 Thomas M. Hess REV SHEET REV C D E E D D E E D SHEET 15 16 17 18 19 20 21 22 23 REV STATUS REV E E E E E E E E E E E E D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Jeffery Tunstall STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216 http://www.dscc.dla.mil CHECKED BY D. A. DiCenzo APPROVED BY N. A. Hauck DRAWING APPROVAL DATE 87-05-26 REVISION LEVEL E MICROCIRCUIT, DIGITAL, CMOS, 1-OF-8 DECODER/DEMULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON SIZE CAGE CODE A 67268 SHEET DSCC FORM 2233 APR 97 1 OF 5962-87554 23 5962-E179-04 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes B, Q and M), and space application (device classes S and V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F Federal stock class designator \ RHA designator (see 1.2.1) 87554 01 M X A Device type (see 1.2.2) Device class designator (see 1.2.3) Case outline (see 1.2.4) Lead finish (see 1.2.5) / \/ Drawing number 1.2.1 RHA designator. Device classes B, S, Q, and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number 01 54ACT138 02 54ACT11138 03 54ACT138 Circuit function 1-of-8 decoder/demultiplexer, TTL compatible inputs 1-of-8 decoder/demultiplexer, TTL compatible inputs 1-of-8 decoder/demultiplexer, TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class M Device requirements documentation Vendor self-certification to the requirements for MIL-STD-883 compliant, nonJAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A B, S, Q, or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter E F X 2 Descriptive designator Terminals GDIP1-T16 or CDIP2-T16 GDFP2-F16 or CDFP3-F16 CDFP4-F16 CQCC1-N20 Package style 16 16 16 20 Dual-in-line Flat pack Flat pack Leadless-chip-carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes B, S, Q, and V or MIL-PRF-38535, appendix A for device class M. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-87554 A REVISION LEVEL E SHEET 2 1.3 Absolute maximum ratings. 1/ 2/ Supply voltage range (VCC)........................................................................................ -0.5 V dc to +6.0 V dc DC input voltage (VIN) ................................................................................................ -0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT)................................................................................. -0.5 V dc to VCC + 0.5 V dc DC input diode current (IIK) (0.0V > VIN, VIN > VCC).................................................... 20 mA DC output diode current (IOK) (0.0V > VOUT, VOUT > VCC) ........................................... 20 mA DC output current (IOUT) (per output) ......................................................................... 50 mA DC VCC or GND current (ICC, IGND) (per pin)............................................................... 200 mA 3/ Storage temperature range (TSTG) ............................................................................. -65C to +150C Maximum power dissipation (PD) ............................................................................... 500 mW Lead temperature (soldering, 10 seconds): Case outline X ........................................................................................................ +260C All other case outlines except case X..................................................................... +300C Thermal resistance, junction-to-case (JC) ................................................................ See MIL-STD-1835 Junction temperature (TJ) .......................................................................................... +175C Case operating temperature (TC)............................................................................... -55C to +125C 1.4 Recommended operating conditions. 2/ 4/ Supply voltage range (VCC)........................................................................................ +4.5 V dc to +5.5 V dc Input voltage range (VIN)............................................................................................ +0.0 V dc to VCC Output voltage range (VOUT) ...................................................................................... +0.0 V dc to VCC Maximum low level input voltage (VIL) ....................................................................... 0.8 V Minimum high level input voltage (VIH) ...................................................................... 2.0 V Case operating temperature range (TC) .................................................................... -55C to +125C Input rise and fall rate (tr and tf) maximum: VCC = 4.5 V ............................................................................................................. 10 ns/V VCC = 5.5 V ............................................................................................................. 8 ns/V Maximum high level output current (IOH).................................................................... -24 mA Maximum low level output current (IOL)...................................................................... 24 mA 1.5 Radiation features. Device type 01: Maximum total dose available (dose rate = 50 - 300 rads (Si)/s) ........................ Single Event Latch-up (SEL) ................................................................................ Device type 03: Maximum total dose available (dose rate = 50 - 300 rads (Si)/s) ........................ Single Event Latchup (SEL) or Single Event Upset (SEU)................................... 1/ 2/ 3/ 4/ 100 krads (Si) 2 100 MeV-cm /mg 300 krads (Si) 2 93 MeV-cm /mg Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. The maximum junction temperature may be exceeded for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. Unless otherwise noted, all voltages are referenced to GND. For packages with multiple VCC and GND pins, this value represents the maximum total current flowing into or out of all VCC or GND pins. Unless otherwise specified, the values listed above shall apply over the full VCC and TC recommended operating range. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-87554 A REVISION LEVEL E SHEET 3 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 MIL-STD-1835 - Test Method Standard Microcircuits. Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 MIL-HDBK-780 - List of Standard Microcircuit Drawings. Standard Microcircuit Drawings. (Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ELECTRONIC INDUSTRIES ALLIANCE (EIA) EIA/JEDEC Standard No. 78 - IC Latch-Up Test JEDEC Standard No. 20 - Standard for Description of 54/74ACXXXX and 54/74ACTXXXX Advanced High-Speed CMOS Devices (Copies of these documents are available online at http://www.jedec.org or from the Electronic Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201-3834.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes B, S, Q, and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level C devices and as specified herein. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-87554 A REVISION LEVEL E SHEET 4 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes B, S, Q, and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. Test conditions for these specified characteristics and limits are as specified in table I. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes B, S, Q, and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes B, S, Q, and V shall be a "QML" or "Q" as required in MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes B, S, Q, and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes B, S, Q, and V, the requirements of MIL-PRF-38535 and herein or for device class M the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes B, S, Q, and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 39 (see MIL-PRF-38535, appendix A). 3.11 Substitution. Substitution data shall be as indicated in the appendix herein. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-87554 A REVISION LEVEL E SHEET 5 TABLE I. Electrical performance characteristics. Test and MIL-STD-883 test method 1/ Symbol Test conditions 2/ 3/ -55C TC +125C 4.5 V VCC 5.5 V unless otherwise specified Device type 4/ and device class VCC Group A subgroups Limits 5/ Min High level output voltage 3006 VOH1 6/ For all inputs affecting output under test VIN = VIH or VIL VIH = 2.0 V VIL = 0.8 V For all other inputs VIN = VCC or GND IOH = -50 A All All 4.5 V 1, 2, 3 4.4 VOH2 For all inputs affecting output under test VIN = VIH or VIL VIH = 2.0 V VIL = 0.8 V For all other inputs M, D, P, L, R VIN = VCC or GND IOH = -50 A All All 5.5 V 1, 2, 3 5.4 VOH3 01 B, S, Q, V For all inputs affecting output under test VIN = VIH or VIL VIH = 2.0 V VIL = 0.8 V For all other inputs VIN = VCC or GND IOH = -24 mA All All V 4.5 V 1, 2, 3 3.7 1 VOH4 6/ For all inputs affecting output under test VIN = VIH or VIL VIH = 2.0 V VIL = 0.8 V For all other inputs VIN = VCC or GND IOH = -24 mA All All 5.5 V 1, 2, 3 4.7 VOH5 7/ For all inputs affecting output under test VIN = VIH or VIL VIH = 2.0 V VIL = 0.8 V All All 5.5 V 1, 2, 3 3.85 For all other inputs VIN = VCC or GND IOH = -50 mA 01 B, S, Q, V M, D, P, L, R Max 1 01 B, S, Q, V M, D, P, L, R Unit 1 See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-87554 A REVISION LEVEL E SHEET 6 TABLE I. Electrical performance characteristics - Continued. Test and MIL-STD-883 test method 1/ Symbol Device type 4/ and device class Test conditions 2/ 3/ -55C TC +125C 4.5 V VCC 5.5 V unless otherwise specified VCC Group A subgroups Limits 5/ Min Low level output voltage 3007 Max VOL1 6/ For all inputs affecting output under test VIN = VIH or VIL VIH = 2.0 V VIL = 0.8 V For all other inputs VIN = VCC or GND IOL = 50 A All All 4.5 V 1, 2, 3 0.1 VOL2 For all inputs affecting output under test VIN = VIH or VIL VIH = 2.0 V VIL = 0.8 V All All 5.5 V 1, 2, 3 0.1 For all other inputs VIN = VCC or GND IOL = 50 A VOL3 M, D, P, L, R 01 B, S, Q, V All B, S, Q, V For all inputs affecting output under test VIN = VIH or VIL VIH = 2.0 V VIL = 0.8 V For all other inputs VIN = VCC or GND IOL = 24 mA M, D, P, L, R For all inputs affecting output under test 4.5 V 1, 3 0.4 2 0.5 01 B, S, Q, V 1 All 1 0.4 2, 3 0.5 1, 3 0.4 2 0.5 1 0.4 2, 3 0.5 1, 2, 3 1.65 All B, S, Q, V 5.5 V VIN = VIH or VIL VIH = 2.0 V VIL = 0.8 V For all other inputs VIN = VCC or GND All M IOL = 24 mA VOL5 7/ For all inputs affecting output under test VIN = VIH or VIL VIH = 2.0 V VIL = 0.8 V For all other inputs VIN = VCC or GND IOL = 50 mA All All 5.5 V 01 B, S, Q, V M, D, P, L, R V 1 M VOL4 6/ Unit 0.4 1 See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-87554 A REVISION LEVEL E SHEET 7 TABLE I. Electrical performance characteristics - Continued. Test and MIL-STD-883 test method 1/ Positive input clamp voltage Symbol VIC+ Device type 4/ and device class Test conditions 2/ 3/ -55C TC +125C 4.5 V VCC 5.5 V unless otherwise specified For input under test IIN = 1 mA 3022 All B, S, Q, V M, D, P, L, R Negative input clamp VICvoltage All B, S, Q, V M, D, P, L, R Input current high IIH 3010 Group A subgroups All IIL 3009 1.5 V -0.4 -1.5 V 1 0.1 A 2 1.0 1 0.1 2, 3 1.0 1 0.1 1 -0.1 2 -1.0 1 -0.1 2, 3 -1.0 1 -0.1 1 1 1 Open 1 5.5 V All M Input current low 0.4 GND B, S, Q, V M, D, P, L, R 01 B, S, Q, V All For input under test VIN = GND For all other inputs VIN = VCC or GND 5.5 V B, S, Q, V All M M, D, P, L, R Unit Max 01 B, S, Q, V For input under test VIN = VCC For all other inputs VIN = VCC or GND Limits 5/ Min 01 B, S, Q, V For input under test IIN = -1 mA 3022 VCC 01 B, S, Q, V A Input capacitance 3012 CIN See 4.4.1c TC = +25C All All GND 4 10.0 pF Power dissipation capacitance CPD 8/ See 4.4.1c TC = +25C 01, 03 All 5.0 V 4 85.0 pF 02 All Quiescent supply current delta, TTL input levels 3005 ICC 9/ For input under test VIN = VCC - 2.1 V For all other inputs VIN = VCC or GND 110.0 01 5.5 V 3 1.6 1, 2 1.0 03 Q, V 1, 2, 3 1.6 All M 1, 2, 3 1.6 01 1 B, S, Q, V M, D P, L, R mA 1.6 B, S, Q, V 3.5 See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-87554 A REVISION LEVEL E SHEET 8 TABLE I. Electrical performance characteristics - Continued. Test and MIL-STD-883 test method 1/ Symbol Device type 4/ and device class Test conditions 2/ 3/ -55C TC +125C 4.5 V VCC 5.5 V unless otherwise specified VCC Group A subgroups Limits 5/ Min Quiescent supply current, output high 3005 ICCH For all inputs VIN = VCC or GND 1 2.0 2 40.0 All 1 8.0 2, 3 160.0 5.5 V M M Quiescent supply current, output low 3005 ICCL Max B, S, Q, V All A 100.0 A 1.0 mA D 01 P, L, R B, S, Q, V 3.5 M, D, P, L, R, F 10/ 03 Q, V 50 A 1 2.0 A 2 40.0 1 8.0 For all inputs VIN = VCC or GND 1 Unit All 5.5 V B, S, Q, V All M M 01 D B, S, Q, V 2, 3 160.0 1 100.0 A 1.0 mA P, L, R 3.5 M, D, P, L, R, F 10/ 03 Q, V 50 A Latch-up input/ output overvoltage ICC (O/V1) 11/ tw 100 s tcool tw 5 s tr 5 ms 5 s tf 5 ms Vtest = 6.0 V VCCQ = 5.5 V Vover = 10.5 V All B, S, Q, V 5.5 V 2 200 mA Latch-up input/ output positive over-current ICC (O/I1+) 11/ tw 100 s tcool tw 5 s tr 5 ms 5 s tf 5 ms Vtest = 6.0 V VCCQ = 5.5 V Itrigger = +120 mA All B, S, Q, V 5.5 V 2 200 mA See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-87554 A REVISION LEVEL E SHEET 9 TABLE I. Electrical performance characteristics - Continued. Test and MIL-STD-883 test method 1/ Symbol VCC Device type 4/ and device class Test conditions 2/ 3/ -55C TC +125C 4.5 V VCC 5.5 V unless otherwise specified Group A subgroups Limits 5/ Min Unit Max Latch-up input/ output negative over-current ICC (O/I1-) 11/ tw 100 s tcool tw 5 s tr 5 ms 5 s tf 5 ms Vtest = 6.0 V VCCQ = 5.5 V Itrigger = -120 mA All B, S, Q, V 5.5 V 2 200 mA Latch-up supply over-voltage ICC (O/V2) 11/ tw 100 s tcool tw 5 s tr 5 ms 5 s tf 5 ms Vtest = 6.0 V VCCQ = 5.5 V Vover = 9.0 V All B, S, Q, V 5.5 V 2 100 mA Truth table test, output voltage 12/ VIL = 0.40 V VIH = 2.40 V Verify output VOUT See 4.4.1e All All 4.5 V 7, 8 L H All M 5.5 V 7, 8 L H 01 B, S, Q, V 4.5 V 7 L H All 4.5 V 9, 11 1.0 11.0 B, S, Q, V 10 1.0 12.5 All 9 1.0 11.0 10, 11 1.0 12.5 9 1.0 11.0 9, 11 1.0 12.0 10 1.0 13.5 9 1.0 12.0 10, 11 1.0 13.5 9 1.0 12.0 3014 M, D, P, L, R Propagation delay tPHL1, time, select to output, An to On tPLH1 3003 13/ 14/ CL = 50 pF minimum RL = 500 See figure 4 M 01 B, S, Q, V M, D, P, L, R Propagation delay time, enable to output, E1 or E2 to On 3003 tPHL2, tPLH2 CL = 50 pF minimum All RL = 500 See figure 4 4.5 V B, S, Q, V All 13/ 14/ M 01 B, S, Q, V M, D, P, L, R ns ns See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-87554 A REVISION LEVEL E SHEET 10 TABLE I. Electrical performance characteristics - Continued. Test and MIL-STD-883 test method 1/ Propagation delay Symbol tPHL3, time, enable to output, E3 to On tPLH3 3003 13/ 14/ Device type 4/ and device class VCC All B, S, Q, V 4.5 V Test conditions 2/ 3/ -55C TC +125C 4.5 V VCC 5.5 V unless otherwise specified CL = 50 pF minimum RL = 500 See figure 4 Group A subgroups All M 01 B, S, Q, V M, D, P, L, R Limits 5/ Min Max 9, 11 1.0 12.5 10 1.0 14.0 9 1.0 12.5 10, 11 1.0 14.0 9 1.0 12.5 Unit ns 1/ For tests not listed in the referenced MIL-STD-883 (e.g. ICC), utilize the general test procedure under the conditions listed herein. All inputs and outputs shall be tested, as applicable, to the tests in table I herein. 2/ Each input/output, as applicable shall be tested at the specified temperature for the specified limits. Output terminals not designated shall be high level logic, low level logic, or open, except as follows: 3/ a. VIC (pos) tests, the GND terminal can be open. TC = +25C. b. VIC (neg) tests, the VCC terminal shall be open. TC = +25C. c. All ICC and ICC tests, the output terminal shall be open. When performing these tests, the current meter shall be placed in the circuit such that all current flows through the meter. RHA parts for device type 01 are tested at all levels M, D, P, L, and R of irradiation. Pre and post irradiation values are identical unless otherwise specified in table I. RHA parts for device type 03 meet all levels M, D, P, L, R, and F of irradiation. Pre and post irradiation values are identical unless otherwise specified in table I When performing post irradiation electrical measurements for any RHA level for any device, TA = +25 C. 4/ The word "All" in the device type and device class column, means limits for all device types and classes. 5/ For negative and positive voltage and current values, the sign designates the potential difference in reference to GND and the direction of current flow, respectively; and the absolute value of the magnitude, not the sign, is relative to the minimum and maximum limits, as applicable, listed herein. 6/ For device classes B, S, Q, and V, this test is guaranteed, if not tested, to the limits specified in table I. 7/ Transmission driving tests are performed at VCC = 5.5 V dc with a 2 ms duration maximum. This test may be performed using VIN = VCC or GND. When VIN = VCC or GND is used, the test is guaranteed for VIN = 2.0 V or 0.8 V. For device class M, subgroup 1 testing shall be guaranteed if not tested to the limits specified in table I. For radiation hardness assured devices, subgroup 1 tests shall be performed. 8/ Power dissipation capacitance (CPD) determines the no load dynamic power consumption, PD = (CPD + CL) (VCC x VCC)f +(ICC x VCC) + (n x d x ICC x VCC), and the dynamic current consumption, IS = (CPD + CL)VCCf + ICC + n x d x ICC. For both PD and IS, n is the number of device inputs at TTL levels, f is the frequency of the input signal, and d is the duty cycle of the input signal. 9/ This test may be performed either one input at a time (preferred method) or with all input pins simultaneously at VIN = VCC - 2.1 V (alternate method). Classes M, B, S, Q, and V shall use the preferred method. When the test is performed using the alternate test method, the maximum limit is equal to the number of inputs at a high TTL input level times ICC maximum limits; and the preferred method and limits are guaranteed. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-87554 A REVISION LEVEL E SHEET 11 TABLE I. Electrical performance characteristics - Continued. 10/ The maximum limit for this parameter at 100 krads (Si) is 2 A. 11/ See JEDEC Standard No. 17 for electrically induced latch-up test methods and procedures. The values listed for Itrigger and Vover are to be accurate within 5 percent. 12/ Tests shall be performed in sequence, attributes data only. Functional tests shall include the truth table and other logic patterns used for fault detection. Functional tests shall be performed in sequence as approved by the qualifying activity on qualified devices. H 2.5 V, L < 2.5 V; high inputs = 2.4 V and low inputs = 0.4 V. The input voltage levels have the allowable tolerances in accordance with MIL-STD-883 already incorporated. 13/ Device classes B, S, Q, and V are tested at VCC = 4.5 V and TC = +125C for sample testing and at VCC = 4.5 V and = +25C for screening. Other voltages of VCC and temperatures are guaranteed, if not tested (see 4.4.1d). TC 14/ AC limits at VCC = 5.5 V are equal to the limits at VCC = 4.5 V and guaranteed by testing at VCC = 4.5 V. Minimum ac limits for VCC = 5.5 V are 1.0 ns and guaranteed by guardbanding the VCC = 4.5 V minimum limits to 1.5 ns. For propagation delay tests, all paths must be tested. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-87554 A REVISION LEVEL E SHEET 12 Device types 01 and 03 Case outlines E, F, and X Terminal number 02 2 E 2 Terminal symbol A0 A1 A2 E1 E2 E3 O7 GND O6 O5 O4 O3 O2 O1 O0 VCC --------- 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 NC A0 A1 A2 E1 NC E2 E3 O7 GND NC O6 O5 O4 O3 NC O2 O1 O0 VCC O1 O2 O3 GND O4 O5 O6 O7 E2 E1 E3 VCC A2 A1 A0 O0 --------- NC A2 A1 A0 O0 NC O1 O2 O3 GND NC O4 O5 O6 O7 NC E2 E1 E3 VCC NC = No connection. Terminal description Terminal symbol Description An (n = 0 to 2) Address (data) inputs E1, E2 Asynchronous enable control inputs (active low) E3 Asynchronous enable control input (active high) On (n = 0 to 7) Outputs (active low) FIGURE 1. Terminal connections. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-87554 A REVISION LEVEL D SHEET 13 Device types 01, 02, and 03 Inputs Outputs E1 E2 E3 A0 A1 A2 O0 O1 O2 O3 O4 O5 O6 O7 H X X X H X X X L X X X X X X X X X H H H H H H H H H H H H H H H H H H H H H H H H L L L L L L L L L L L L L L L L H H H H H H H H L H L H L H L H L L H H L L H H L L L L H H H H L H H H H H H H H L H H H H H H H H L H H H H H H H H L H H H H H H H H L H H H H H H H H L H H H H H H H H L H H H H H H H H L H = High voltage level L = Low voltage level X = Immaterial FIGURE 2. Truth table. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-87554 A REVISION LEVEL D SHEET 14 FIGURE 3. Logic diagram. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-87554 A REVISION LEVEL C SHEET 15 NOTES: 1. CL = 50 pF minimum or equivalent (includes test jig and probe capacitance). 2. RT = 50 or equivalent. RL = 500 or equivalent. 3. Input signal from pulse generator: VIN = 0.0 V to 3.0 V; PRR 10 MHz; tr 3 ns; tf 3 ns; duty cycle = 50 percent. 4. Timing parameters shall be tested at a minimum input frequency of 1 MHz. 5. Outputs are measured one at a time with one output per measurement. FIGURE 4. Switching waveforms and test circuit. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-87554 A REVISION LEVEL D SHEET 16 4. VERIFICATION 4.1 Sampling and inspection. For device classes B, S, Q, and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A 4.2 Screening. For device classes B, S, Q, and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device classes M, B, and S. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA = +125C, minimum. (3) Delete the sequence specified in 3.1.10 through 3.1.14 of method 5004 and substitute the first 7 test requirements of table II herein. (4) For device class M, unless otherwise noted, the requirements for device class B in method 1015 of MIL-STD-883 shall be followed. (5) Unless otherwise specified in the QM plan for static burn-in, device classes B and S, test condition A, method 1015 of MIL-STD-883, the test duration for each static test shall be 24 hours minimum for class S devices and in accordance with table I of method 1015 for class B devices. (a) For static burn-in I, all inputs shall be connected to GND. Outputs may be open or connected to VCC/2 0.5 V. Resistors R1 are optional on both inputs and open outputs and required on outputs connected to VCC/2 0.5 V. R1 = 220 to 47 k. (b) For static burn-in II, all inputs shall be connected through the R1 resistors to VCC. Outputs may be open or connected to VCC/2 0.5 V. Resistors R1 are optional on open outputs, and required on outputs connected to VCC/2 0.5 V. R1 = 220 to 47 k. (c) VCC = 5.5 V 0.5 V. (6) Unless otherwise specified in the QM plan for dynamic burn-in, device classes B and S, test condition D, method 1015 of MIL-STD-883, the following shall apply: (a) Input resistors = 220 to 2 k 20 percent. (b) Output resistors = 220 20 percent. (c) VCC = 5.5 V 0.5 V. (d) The A0 pin shall be connected through a resistor to clock pulse 1 (CP1). The A1 pin shall be connected through a resistor to clock pulse 2 (CP2). The A2 pin shall be connected through a resistor to clock pulse 3 (CP3). The enable pins shall be connected to VCC or GND, as applicable, to enable the outputs. Outputs shall be connected through the resistors to VCC/2 0.5 V. (e) CP1, CP2, CP3 = 25 kHz to 1 MHz square wave; fCP2 = fCP1/2; fCP3 = fCP2/2; duty cycle = 50 percent 15 percent; VIH = 4.5 V to VCC; VIL = 0.0 V 0.5 V; tr, tf 100ns. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-87554 A REVISION LEVEL E SHEET 17 b. Interim and final electrical test parameters shall be as specified in table II herein. c. For class S devices, post dynamic burn-in, or class B devices, post static burn-in, electrical parameter measurements may, at the manufacturer's option, be performed separately or included in the final electrical parameter requirements. 4.2.2 Additional criteria for device classes B, S, Q, and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II herein. c. Additional screening for device class V or S beyond the requirements of device class Q or B shall be as specified in MIL-PRF-38535, appendix B. 4.2.3 Percent defective allowable (PDA). a. The PDA for class S or V devices shall be 5 percent for static burn-in and 5 percent for dynamic burn-in, based on the exact number of devices submitted to each separate burn-in. b. Static burn-in I and II failures shall be cumulative for determining the PDA. c. The PDA for class B or Q devices shall be in accordance with MIL-PRF-38535 for static burn-in. Dynamic burn-in is not required. d. The PDA for class M devices shall be in accordance with MIL-PRF-38535, appendix A for static burn-in and dynamic burn-in. e. Those devices whose measured characteristics, after burn-in, exceed the specified delta limits or electrical parameter limits specified in table I, subgroup I, are defective and shall be removed from the lot. The verified number of failed devices times 100 divided by the total number of devices in the lot initially submitted to burn-in shall be used to determine the percent defective for the lot and the lot shall be accepted or rejected based on the specified PDA. 4.3 Qualification inspection. 4.3.1 Qualification inspection for device classes B, S, Q, and V. Qualification inspection for device classes B, S, Q, and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.5). 4.4 Conformance inspection. Technology conformance inspection for classes B, S, Q, and V shall be in accordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.5). STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-87554 A REVISION LEVEL E SHEET 18 TABLE II. Electrical test requirements. Test requirements Interim electrical parameters, method 5004 Static burn-in I, method 1015 (4.2.1a) Interim electrical parameters, method 5004 (4.2.1b) Static burn-in II, method 1015 (4.2.1a) Interim electrical parameters, method 5004 (4.2.1b) Dynamic burn-in I, method 1015 (4.2.1a) Interim electrical parameters, method 5004 (4.2.1b) Final electrical parameters, method 5004 Group A test requirements, method 5005 (4.4.1) Group B end-point electrical parameters, method 5005 (4.4.2) Group C end-point electrical parameters, method 5005 (4.4.3) Group D end-point electrical parameters, method 5005 (4.4.4) Group E end-point electrical parameters, method 5005 (4.4.5) 1/ 2/ 3/ 4/ 5/ 6/ Subgroups 1/ (in accordance with MIL-STD-883, method 5005, table I) Device class M 3/ Subgroups 1/ (in accordance with MIL-PRF-38535, table III) Device 2/ class B 1 Device 2/ class S 1 Device class Q 1 Device class V 1 Not required Required 4/ Not required Required 4/ 1 5/ 3/ 3/ 1 5/ Required 6/ Required 4/ Required 6/ Required 4/ 1 2/ 5/ 1 2/ 5/ 1 2/ 5/ 1 2/ 5/ Not required Required 4/ Not required Required 4/ 1 5/ 1, 2, 3, 7, 8, 9 2/ 1, 2, 7, 9 2/ 6/ 1, 2, 7, 9 2/ 1, 2, 3, 4, 7, 8, 9, 10, 11 1, 2, 3, 4, 7, 8, 9, 10, 11 1, 2, 3, 4, 7, 8, 9, 10, 11 1, 2, 3, 7, 8, 9, 10, 11 5/ 1, 2, 3 1, 2 5/ 1, 2, 3 1, 2 1, 7, 9 1, 7, 9 1 5/ 1, 2, 3, 7, 8, 9, 10, 11 2/ 6/ 1, 2, 3, 4, 7, 8, 9, 10, 11 1, 2, 3, 7,8, 9, 10, 11 2/ 1, 2, 3, 4, 7, 8, 9, 10, 11 1, 2, 3 5/ 1, 2, 3, 7, 8, 9, 10, 11 5/ 1, 2, 3 1, 2, 3 1, 2, 3 1, 7, 9 1, 7, 9 1, 7, 9 Blank spaces indicate tests are not applicable. PDA applies to subgroup 1 (see 4.2.3). For device classes S and V, PDA applies to subgroups 1 and 7 (see 4.2.3). The burn-in shall meet the requirements of 4.2.1a herein. On all class S lots, the device manufacturer shall maintain read-and-record data (as a minimum on disk) for burn-in electrical parameters (group A, subgroup 1), in accordance with test method 5004 of MIL-STD-883. For pre-burn-in and interim electrical parameters, the read-and-record requirements are for delta measurements only. Delta limits shall be required only on table I, subgroup 1. The delta values shall be computed with reference to the previous interim electrical parameters. The delta limits are specified in table III. The device manufacturer may, at his option, either complete subgroup 1 electrical parameter measurements, including delta measurements, within 96 hours after burn-in completion (removal of bias) or may complete subgroup 1 electrical measurements without delta measurements within 24 hours after burn-in completion (removal of bias). When the manufacturer elects to perform the subgroup 1 electrical parameter measurements without delta measurements, there is no requirement to perform the pre-burn-in electrical tests (first interim electrical parameters test in table II). STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-87554 A REVISION LEVEL D SHEET 19 TABLE III. Burn-in and operating life test, delta parameters (+25C). Parameter 1/ Supply current Symbol Device types Delta limits ICCH, ICCL 01 100 nA 2/ 03 300 nA 03 0.4 mA Input current low level ICC IIL 03 20 nA Input current high level IIH 03 20 nA VOL 03 0.04 V VOH 03 0.20 V Supply current delta Output voltage low level VCC = 5.5 V, IOL = 24 mA Output voltage high level VCC = 5.5 V, IOH = -24 mA 1/ These parameters shall be recorded before and after the required burn-in and life tests to determine delta limits. 2/ Guaranteed, if not tested. 4.4.1 Group A inspection. a. Tests shall be as specified in table II herein. b. Latch-up tests are required for device classes B, S, Q, and V. These tests shall be performed only for initial qualification and after process or design changes which may affect the performance of the device. Latch-up tests shall be considered destructive. For latch-up tests, test all applicable pins on five devices with zero failures. c. CIN and CPD shall be measured only for initial qualification and after process or design changes which may affect capacitance. CIN shall be measured between the designated terminal and GND at a frequency of 1 MHz. CPD shall be tested in accordance with the latest revision of JEDEC Standard No. 20 and table I herein. For CIN and CPD, test all applicable pins on five devices with zero failures. d. For device classes B, S, Q, and V, subgroups 9 and 11 tests shall be measured only for initial qualification and after process or design changes which may affect dynamic performance. e. For device class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table. The test vectors used to verify the truth table shall test all possible input to output logic patterns. For device classes B, S, Q, and V, subgroups 7 and 8 shall include verifying the functionality of the device. 4.4.2 Group B inspection. When applicable, the group B inspection end-point electrical parameters shall be as specified in table II herein. For device class S steady steady-state life tests, the test circuit shall be maintained by the manufacturer and shall be made available to the acquiring or preparing activity upon request. 4.4.3 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table II herein. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-87554 A REVISION LEVEL D SHEET 20 4.4.3.1 Additional criteria for device class M . Steady-state life test conditions, method 1005 of MIL-STD-883: a. Test condition A, B, C or D. The test circuit shall maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-883. b. TA = +125C, minimum. c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. 4.4.3.2 Additional criteria for device classes B, S, Q, and V. The steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB, in accordance with MIL-PRF-38535, and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-883. 4.4.4 Group D inspection. Group D inspection end-point electrical parameters shall be as specified in table II herein. 4.4.5 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. End-point electrical parameters shall be as specified in table II herein. b. For device classes B, S, Q, and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25C 5C, after exposure, to the subgroups specified in table II herein. c. RHA tests for device classes M, B, S, Q, and V for levels M, D, P, L, R, and F shall be performed through each level to determine at what levels the devices meet the RHA requirements. These RHA tests shall be performed for initial qualification and after design or process changes that may affect the RHA performance of the device. d. Prior to irradiation, each selected sample shall be assembled in its qualified package. It shall pass the specified group A electrical parameters in table I for subgroups specified in table II herein. 4.4.5.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883, method 1019, condition A and as specified herein. Prior to and during total dose irradiation characterization and testing, the devices for characterization shall be biased so that 50 percent are at inputs high and 50 percent are at inputs low, and the devices for testing shall be biased to the worst case condition established during characterization. Devices shall be biased as follows: a. Device type 01: (1) Inputs tested high, VCC = 5.5 V dc +5%, RCC = 10 +20%, VIN = 5.0 V dc +5%, RIN = 1 k +20%, and all outputs are open. (2) Inputs tested low, VCC = 5.5 V dc +5%, RCC = 10 +20%, VIN = 0.0 V dc, RIN = 1 k +20%, and all outputs are open. b. Device type 03: (1) Inputs tested high, VCC = 5.5 V dc 5%, VIN = 5.0 V dc +10%, RIN = 1 k 20%, and all outputs are open. (2) Inputs tested low, VCC = 5.5 V dc 5%, VIN = 0.0 V dc, RIN = 1 k 20%, and all outputs are open. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-87554 A REVISION LEVEL E SHEET 21 4.4.5.1.1 Accelerated aging test. Accelerated aging shall be performed on classes M, B, S, Q, and V devices requiring an RHA level greater than 5K rads (Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be the pre-irradiation end-point electrical parameter limit at 25C 5C. Testing shall be performed at initial qualification and after any design or process changes which may affect the RHA response of the device. 4.5 Methods of inspection. Methods of inspection shall be specified as follows. 4.5.1 Voltage and current. Unless otherwise specified, all voltages given are referenced to the microcircuit GND terminal. Currents given are conventional current and positive when flowing into the referenced terminal. 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes B, S, Q, and V or MIL-PRF-38535, appendix A for device class M. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. 6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractorprepared specification or drawing. 6.1.2 Substitutability. Device classes B and Q devices will replace device class M devices. 6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal. 6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus (DSCC) when a system application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0544. 6.4 Comments. Comments on this drawing should be directed to DSCC-VA, Columbus, Ohio 43216-5000, or telephone (614) 692-0547. 6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-38535 and MIL-HDBK-1331. 6.6 Sources of supply. 6.6.1 Sources of supply for device classes B, S, Q, and V. Sources of supply for device classes B, S, Q, and V are listed in QML-38535. The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have agreed to this drawing. 6.6.2 Approved sources of supply for device classes M. Approved sources of supply for class M are listed in MIL-HDBK-103. The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by DSCC-VA. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-87554 A REVISION LEVEL E SHEET 22 APPENDIX A A.1. SCOPE A.1.1 Scope. This appendix contains the PIN substitution information to support the one part-one part number system. For new designs, after the date of this document the new PIN shall be used in lieu of the old PIN. For existing designs prior to the date of this document, the new PIN can be used in lieu of the old PIN. This appendix is a mandatory part of the specification. The information contained herein is intended for compliance. The PIN substitution data shall be as follows. A.2. APPLICABLE DOCUMENTS. This section is not applicable to this appendix. A.3. SUBSTITUTION DATA New PIN 5962-8755401MEA 5962-8755401MFA 5962-8755401M2A Old PIN 5962-8755401EA 5962-8755401FA 5962-87554012A STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 SIZE 5962-87554 A REVISION LEVEL D SHEET 23 STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 04-05-05 Approved sources of supply for SMD 5962-87554 are listed below for immediate acquisition information only and shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by DSCC-VA. This information bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. Standard microcircuit drawing PIN 1/ 5962-8755401MEA 5962-8755401MFA 5962-8755401M2A 5962-8755401BEA 5962-8755401BFA 5962-8755401B2A 5962-8755401SFA 5962-8755401SEA 5962-8755401S2A 5962R8755401BEA 5962R8755401BFA 5962R8755401B2A 5962R8755401SEA 5962R8755401SFA 5962R8755401S2A 5962-8755402MEA 5962-8755402M2A 5962-8755403QXA 5962-8755403QXC 5962-8755403VXA 5962-8755403VXC 5962F8755403QXA 5962F8755403QXC 5962F8755403VXA 5962F8755403VXC Vendor CAGE number 27014 27014 27014 27014 3/ 3/ 3/ 3/ 3/ 27014 27014 27014 27014 27014 27014 3/ 3/ F8859 F8859 F8859 F8859 F8859 F8859 F8859 F8859 Vendor similar PIN 2/ 54ACT138DMQB 54ACT138FMQB 54ACT138LMQB JM54ACT138BEA JM54ACT138BFA JM54ACT138B2A JM54ACT138SFA JM54ACT138SEA JM54ACT138S2A JM54ACT138BEA-R JM54ACT138BFA-R JM54ACT138B2A-R JM54ACT138SEA-R JM54ACT138SFA-R JM54ACT138S2A-R 54ACT11138J 54ACT11138FK 54ACT138K02Q 54ACT138K01Q 54ACT138K02V 54ACT138K01V RHFACT138K02Q RHFACT138K01Q RHFACT138K02V RHFACT138K01V 1/ The lead finish shown for each PIN representing a hermetic package is the most readily available from the manufacturer listed for that part. If the desired lead finish is not listed contact the vendor to determine its availability. 2/ Caution. Do not use this number for item acquisition. Items acquired to this number may not satisfy the performance requirements of this drawing. 3/ No longer available from an approved supplier. Vendor CAGE number Vendor name and address 27014 National Semiconductor 2900 Semiconductor Drive P.O. Box 58090 Santa Clara, CA 95052-8090 F8859 ST Microelectronics 3 rue de Suisse BP4199 35041 RENNES cedex2 - France The information contained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuracies in the information bulletin.