5KASMC10A thru 5KASMC43A
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Revision: 18-Apr-16 1Document Number: 89432
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
FEATURES
Junction passivation optimized design
passivated anisotropic rectifier technology
•T
J = 185 °C capability suitable for high reliability
and automotive requirement
Available in uni-directional polarity only
5000 W peak pulse power capability with a 10/1000 μs
waveform
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
AEC-Q101 qualified
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-214AB (SMCJ)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified (“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HM3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
Note
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
PRIMARY CHARACTERISTICS
VWM 10 V to 43 V
VBR 11.1 V to 52.8
PPPM (10 x 1000 μs) 5000 W
PD 6.5 W
TJ max. 185 °C
Polarity Uni-directional
Package DO-214AB (SMCJ)
DO-214AB (SMCJ)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 3) PPPM (1) 5000 W
Peak power pulse current with a 10/1000 μs waveform (fig. 1) IPPM (1) See next table A
Power dissipation on infinite heatsink, TM = 50 °C PD6.5 W
Operating junction and storage temperature range TJ, TSTG -65 to +185 °C
5KASMC10A thru 5KASMC43A
www.vishay.com Vishay General Semiconductor
Revision: 18-Apr-16 2Document Number: 89432
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse test: tp 50 ms
(2) Surge current waveform per fig. 3 and derated per fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
Notes
(1) Mounted on minimum recommended pad layout
(2) Mounted on infinite heat sink
Note
(1) AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
VBR AT IT (1)
(V)
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
IR (μA)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
TJ = 150 °C
ID (μA)
MAXIMUM
PEAK PULSE
SURGE
CURRENT
IPPM (2)
(A)
MAXIMUM
CLAMPING
VOLTAGE
AT IPPM
VC (V)
MIN. MAX.
5KASMC10A 5AX 11.1 12.3 1.0 10 20.0 500 294.1 17.0
5KASMC12A 5BE 13.3 14.7 1.0 12 10.0 300 251.3 19.9
5KASMC13A 5BG 14.4 15.9 1.0 13 10.0 300 232.6 21.5
5KASMC16A 5BP 17.8 19.7 1.0 16 2.0 50 192.3 26.0
5KASMC17A 5BR 18.9 20.9 1.0 17 2.0 50 181.2 27.6
5KASMC18A 5BT 20.0 22.1 1.0 18 2.0 50 171.2 29.2
5KASMC20A 5BV 22.2 24.5 1.0 20 2.0 50 154.3 32.4
5KASMC22A 5BX 24.4 26.9 1.0 22 2.0 50 140.8 35.5
5KASMC24A 5BZ 26.7 29.5 1.0 24 2.0 50 128.5 38.9
5KASMC26A 5CE 28.9 31.9 1.0 26 2.0 50 118.8 42.1
5KASMC28A 5CG 31.1 34.4 1.0 28 2.0 50 110.1 45.4
5KASMC30A 5CK 33.3 36.8 1.0 30 2.0 50 103.3 48.4
5KASMC33A 5CM 36.7 40.6 1.0 33 2.0 50 93.8 53.3
5KASMC36A 5CP 40.0 44.2 1.0 36 2.0 50 86.1 58.1
5KASMC40A 5CR 44.4 49.1 1.0 40 2.0 50 77.5 64.5
5KASMC43A 5CT 47.8 52.8 1.0 43 2.0 50 72.0 69.4
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Typical thermal resistance, junction to ambient RJA (1) 100 °C/W
Typical thermal resistance, junction to mount RJM (2) 20.8 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
5KASMC10AHM3/57 (1) 0.257 57 850 7" diameter plastic tape and reel
5KASMC10AHM3/9A (1) 0.257 9A 3500 13" diameter plastic tape and reel
5KASMC10AHM3_A/H (1) 0.257 H 850 7" diameter plastic tape and reel
5KASMC10AHM3_A/I (1) 0.257 I 3500 13" diameter plastic tape and reel
5KASMC10A thru 5KASMC43A
www.vishay.com Vishay General Semiconductor
Revision: 18-Apr-16 3Document Number: 89432
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 3 - Pulse Waveform
Fig. 4 - Typical Junction Capacitance
Fig. 5 - Power Derating Curve
Fig. 6 - Typical Transient Thermal Impedance
1
10
100
1101001000
P
PPM
- Peak Pulse Power (kW)
td - Pulse Width (µs)
0
25
50
75
100
050 100 150 200
TJ - Initial Temperature (°C)
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage (%)
0
50
100
150
tr = 10 µs
tr = 8 µs
Peak Value
IPPM
Half Value -
IPPM
IPP
2
td
01.0 2.0 3.0 4.0
t - Time (ms)
I
PPM
- Peak Pulse Current (% I
RSM
)
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
td = 1000 µs
td = 20 µs
100
10 000
1 000 000
10 20 30 40 50
C
J
- Junction Capacitance (pF)
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Measured at
Zero Bias
Measured at
Stand-Off Voltage V
WM
1000
100 000
6.5
Temperature (°C)
PD - Power Dissipation (W)
0
1501000 20050 1751257525
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5 T
A,
Mounted on Minimum
Recommended Pad Layout
T
M
, Mounted on
Innite Heatsink
Transient Thermal Impedance (°C/W)
tp - Pulse Duration (s)
100
10
1
0.01 0.1 1 10 100 1000
5KASMC10A thru 5KASMC43A
www.vishay.com Vishay General Semiconductor
Revision: 18-Apr-16 4Document Number: 89432
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.260 (6.60)
0.280 (7.11)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.2)
0.305 (7.75)
0.320 (8.13)
0.220 (5.59)
0.246 (6.22)
0.079 (2.06)
0.103 (2.62)
0.114 (2.90)
0.126 (3.20)
Cathode Band
DO-214AB (SMC J-Bend)
0.320 REF.
Mounting Pad Layout
0 (0)
0.185 (4.69)
MAX.
0.126 (3.20)
MIN.
0.060 (1.52)
MIN.
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 13-Jun-16 1Document Number: 91000
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