SOT-23 Plastic-Encapsulate Transistors Wi ,. MMBTA42LT1 TRANSISTOR (NPN) 1.BASE 2.EMITTER 3.COLLECTOR 2 Y UNIT: mm mee dissipation Pom: 0.3. W (Tamb=25 > Collector current icm: O.3A Collector-base voltage ViBR)CBO:300V Operating and storage junction temperature range Tu, Tstg :-55C to+150C ELECTRICAL CHARACTERISTICS (Tamp=25C unless otherwise specified) i Collector-base breakdown voltage V(BR)CBO Ic=100U A, le=0 300 Vv Collector-emitter breakdown voltage V(BR)CEO Ic=tmA, la=0 300 Vv Emitter-base breakdown voitage V(BR}EBO 1e=10L A, IB=0 5 Vv Collector cut-off current Icso VcB=200V le=0 0.25 BA Emitter cut-off current lEBO VeB=3V,Ic=OmA 0.25 uA hFE(1) Vce=10V,Ic=imA 25 DC current gain NFE(2) VceE=10V,Ic=10mA 100 200 NFE(3) VcE=10V, Ic=50mA 25 Collector-emitter saturation voltage VcEsat Ic=20mA,la=2mA 0.5 Vv Base-emitter saturation voltage VBEsat Ic=20mA,la=2mA 0.9 V Transition frequency ft Vce=5V,Ic=10mA,f=30MHz 50 MHz DEVICE MARKING : MMBTA42LT1=1D 196197 hre .DC CURRENT GAIN Typical Characteristics 120 100 80 V, VOLTAGE (VOLTS) 04 Ty = +425C Mee MMBTA42LT1 Voce = 10 Vde 16 10 ic, COLLECTOR CURRENT (mA) DC Current 04 10 ic, COLLECTOR CURRENT (mA) 10 "ON" Voltages fr CURRENT-GAIN BANDWIDTH (MHz) 100 Gain VcEsat @25 C, IclB = 10 a To Vesa @125 C, Icle = 10 7 - a - Vee sat @-55 C, tcla = 10 crn VBEsat @25'C, Icip = 10 Sot te VBEsat @125 C, Icla = 10 -~ - - ~ += + - = VBEsat @-55 C, Icis = 10 - ee - VBE O25, VCE = 10V fem ee VBE @125'C, Voce = 10V VBE @-55 C, Vce = 10V 8C 70 60 50 / 40 \ 30 Ty =26C Vce =20V 20 it 10 2.0 3.0 5.0 7.0 10 2 30 50 70 100 Ic, COLLECTOR CURRENT {mA} CurrentGain Bandwidth