SENSITRON
SEMICONDUCTOR
Technical Data Green Products
Data Sheet M2687, Rev. -
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR2560CT-G
MBRB2560CT-G
MBR2560CT-1-G
MBR2560CT-G/MBRB2560CT-G/MBR2560CT-1-G
SCHOTTKY RECTIFIER
Applications:
•
••
• Switching power suppl y •
••
• Conve rt ers •
••
• Free-Wheeling diodes •
••
• Reverse battery protection
Features:
• 150 °
°°
°C TJ operation
• Cent e r tap configuration
• Low forwar d voltage drop
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
• Hig h fr e quenc y ope ration
• Guard ring for enhanced ruggedness and long term reliability
Mechanical Dimensions: In Inches / mm
TO-220AB
Case styles
MBR2560CT-G
TO-220AB
MBRB2560CT-G
D2PAK
MBR2560CT-1-G
TO-262
SENSITRON
SEMICONDUCTOR
Technical Data Green Products
Data Sheet M2687, Rev. -
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR2560CT-G
MBRB2560CT-G
MBR2560CT-1-G
D2PAK
1.17(0.046)
1.37(0.054)
1.30(0.051)
1.70(0.067)
10.16(0.400)
REF.
15.49(0.610)
14.73(0.580)
1.40(0.055)
1.14(0.045)
3
×
8.90(0.350)
8.50(0.335)
2
×
0.93(0.037)
0.69(0.027)
4.69(0.185)
4.20(0.165)
1.32(0.052)
1.22(0.048)
5.28(0.208)
4.78(0.188)
5.08(0.200)REF.
0.55(0.022)
0.46(0.018)
BASE
COMMON
CATHODE
ANODE 1 ANODE 2
CATHODE
COMMON
TO-262
SENSITRON
SEMICONDUCTOR
Technical Data Green Products
Data Sheet M2687, Rev. -
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR2560CT-G
MBRB2560CT-G
MBR2560CT-1-G
Maximum Ratings:
Characteristics Symbol Condition Max. Units
Peak Inverse Voltage VRWM - 60 V
Max. Average Forward IF(AV) 50% duty cycle @TC = 130°C,
rectangular wave form 30 A
Max. Peak One Cycle Non-
Repetiti ve Surge Current
(per leg) IFSM 8.3 ms, half Sine pulse 150 A
Electrical Characteristics:
Characteristics Symbol Condition Max. Units
Max. Forward Voltage Drop
(per leg) * VF1 @ 15A, Pulse, TJ = 25 °C
@ 30A, Puls e, TJ = 25 °C 0.75
- V
V
F2 @ 15A, Pu lse , TJ = 125 °C
@ 30A, Puls e, TJ = 125 °C 0.65
- V
Max. Reverse Current (per
leg) * IR1 @VR = rated VR
TJ = 25 °C 1.0 mA
I
R2 @VR = rated VR
TJ = 125°C 50 mA
Max. Voltage Rate of Change dv /d t - 10,000 V/µs
Clip mounting, the epoxy body
away from the heatsink edge by
more than 0.110” along the lead
direction
4500
Clip mounting , the epoxy body is
inside the heatsink. 3500
RSM Isolation Vol ta ge
(t=1.0second, R.H.<=30%,
TA=25%)
VISO
Screw mounting, the epoxy body
is inside the heatsi nk 1500
V
* Pulse Width < 300µs, Duty Cycle <2%
Thermal -Mec hanic al Spe cif ica tions:
Characteristics Symbol Condition Specification Units
Max. Junction Temperature TJ - -55 to +150
°C
Max. Storage Temperature Tstg - -55 to +150
°C
Maximum Thermal
Resistan ce Ju n ctio n to Case RθJC DC operation 3.5 °C/W
Approximate Weight wt - 2.0 g
Mounting Torque TM - 6(Min.)
12(Max.) Kg-cm
Case Style TO-220AB D2PAK TO-262(Suffix”-1”forTO-262”MBRBx” for D2PAK)
SENSITRON
SEMICONDUCTOR
Technical Data Green Products
Data Sheet M2687, Rev. -
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR2560CT-G
MBRB2560CT-G
MBR2560CT-1-G
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the lates t
version of the datasheet (s) .
2- In cases where extremely high reliabil it y is required (such as use in nuclear power control, aerospac e and aviation, tr aff ic equi pm ent ,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or
by means of users ’ f ail-s a fe precaut ions or other arrangem ent .
3- In no event shall Sensitr on Sem i conduc t or be liable for any damages that may result from an accident or any other caus e during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting
from us e at a value exceeding the absolute m aximum rat i ng.
5- No license is granted by the datas heet(s ) under any patents or other rights of any third party or Sens it ron Semic onduc tor.
6- The datasheet(s) m ay not be reproduced or duplicated, in any form , in whole or part, without the expressed writ ten permiss i on of
Sensit ron S em i conduc tor .
7- The products (tec hnolo gies) descr ibed in the datas heet( s) are not to be provided to any party whose purpose in their application will
hinder main tenanc e of int ernat ional peace and safet y nor are they to be applied to that purpose by their direct purc h as ers or any third
party. When exporting these products (t echnologi es ), the nec ess ary procedures are to be taken in accor danc e with related laws and
regulations.
