DATA SH EET
Product data sheet
Supersedes data of 1999 May 11 2003 Mar 25
DISCRETE SEMICONDUCTORS
PMBD6100
High-speed double diode
db
ook, halfpage
M3D088
2003 Mar 25 2
NXP Semiconductors Product data sheet
High-speed double diode PMBD6100
FEATURES
•Small plastic SMD package
•High switching speed: max. 4 ns
•General application
•Continuous reverse voltage:
max. 70 V
•Repetitive peak reverse voltage:
max. 85 V
•Repetitive peak fo rward current:
max. 450 mA.
APPLICATIONS
•High-speed switching in surface
mounted circuits.
DESCRIPTION
The PMBD6100 consists of two
high-speed switching diodes with
common cathodes, fabricated in
planar technology, and encapsulated
in the small SOT23 plastic SMD
package.
PINNING
PIN DESCRIPTION
1anode (a1)
2anode (a2)
3common cathod e
Fig.1 Simplified outline (SOT23) and symbol.
handbook, 4 columns 21
3
Top view
MAM108
21
3
MARKING
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
TYPE NUMBER MARKING
CODE(1)
PMBD6100 ∗5B
LIMITING VALUES
In accordance with the A bsolute Maxi mum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRRM repetitive peak reverse voltage −85 V
VRcontinuous revers e voltage −70 V
IFcontinuous forward current single diode loaded; note 1;
see Fig.2 −215 mA
double diode load ed; note 1;
see Fig.2 −125 mA
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NXP Semiconductors Pr oduct dat a shee t
High-speed double diode PMBD6100
Note
1. Device mounted on an FR4 printed-circuit board .
IFRM repetitive peak forward current −450 mA
IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs−4 A
t = 1 ms −1 A
t = 1 s −0.5 A
Ptot total power dissipation Tamb = 25 °C; note 1 −250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ELECTRICAL CHARACTERISTIC S
Tj = 25 °C unless otherwise specified.
THERMAL CHARACTE RISTICS
Note
1. Device mounted on an FR4 printed-circuit board .
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VFforward voltage see Fig.3
IF = 1 mA 550 700 mV
IF = 10 mA −855 mV
IF = 50 mA −1 V
IF = 100 mA 0.85 1.1 V
IRreverse current see Fig.5
VR = 50 V −100 nA
VR = 50 V; Tj = 150 °C−50 µA
Cddiode capacit an ce f = 1 MHz; VR = 0; see Fig.6 −1.5 pF
trr reverse recove ry time when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured
at IR = 1 mA; see Fig.7
−4ns
Vfr forward recove ry voltage when switched from IF = 10 mA;
tr = 20 ns; see Fig.8 −1.75 V
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 360 K/W
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
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NXP Semiconductors Pr oduct dat a shee t
High-speed double diode PMBD6100
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuou s forward
current as a func tion of ambient
temperature.
0 200
300
0
100
200
MBD033
100
IF
(mA)
T ( C)
amb o
single diode loaded
double diode loaded
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.3 Forward current as a function of forward
voltage.
handbook, halfpage
02
300
IF
(mA)
0
100
200
MBG382
1VF (V)
(1) (3)(2)
Fig.4 Maximum permissible non-repetitive peak forwar d current as a function of pulse duration.
Based on square wave currents.
Tj = 25 °C prior to surge.
handbook, full pagewidth
MBG704
10 tp (µs)
1
IFSM
(A)
102
10−1104
102103
10
1
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NXP Semiconductors Pr oduct dat a shee t
High-speed double diode PMBD6100
Fig.5 Reverse current as a function of junc tion
temperature.
handbook, halfpage
10
2
10
200
0
MBG379
100 Tj (
o
C)
IR
(µA)
1
10
2
10
1
(1) (2) (3)
(1) VR = 50 V; maximum values.
(2) VR = 50 V; typical values.
(3) VR = 30 V; typical values.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj = 25 °C.
handbook, halfpage
0816124
0.8
0.6
0
0.4
0.2
MBG446
VR (V)
Cd
(pF)
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NXP Semiconductors Pr oduct dat a shee t
High-speed double diode PMBD6100
Fig.7 Reverse reco very voltage test circuit and waveforms.
(1) IR = 1 mA.
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SΩIF
D.U.T.
R = 50
iΩ
SAMPLING
OSCILLOSCOPE
MGA881
Fig.8 Forward recovery voltage test circuit and waveforms.
trt
tp
10%
90%
I
input
signal
R = 50
SΩ
I
R = 50
iΩ
OSCILLOSCOPE
Ω1 k Ω450
D.U.T.
MGA882
Vfr
t
output
signal
V
2003 Mar 25 7
NXP Semiconductors Pr oduct dat a shee t
High-speed double diode PMBD6100
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT2
3
2003 Mar 25 8
NXP Semiconductors Pr oduct dat a shee t
High-speed double diode PMBD6100
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s) described in this document may have changed since this docu ment was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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reserves the right to make changes to informa t ion
published in this doc ument, including without limitation
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modificat ion .
Limiting values ⎯ Stress abov e on e or more limit ing
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values a re s t ress ratings only and
operation of the device at these or an y other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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extract of th e product data given in the Limiting values and
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NXP Semiconductors
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Customer notification
This data sheet was changed to reflect the new company name NXP Semicon ductors. No change s were
made to the content, except for the legal definitions and disclaimer s.
Printed in The Netherlands 613514/04/pp9 Date of release: 2003 Mar 25 Docum ent order numbe r: 9397 750 10967
