APM8001K Dual N-Channel Enhancement Mode MOSFET Pin Description Features * D1 D1 80V/4.1A, D2 D2 RDS(ON) =55m(Typ.) @ VGS = 10V * * Reliable and Rugged S1 G1 S2 Lead Free and Green Devices Available G2 (RoHS Compliant) SOP-8 D1 D1 D2 D2 Applications * G1 G2 Power Management in DC/DC Converter, DC/ AC Inverter Systems. S1 S2 N-Channel MOSFET Ordering and Marking Information Package Code K : SOP-8 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device APM8001 Assembly Material Handling Code Temperature Range Package Code APM8001 K : APM8001 XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines "Green" to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Apr., 2009 1 www.anpec.com.tw APM8001K Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted) Parameter Symbol Rating VDSS Drain-Source Voltage 80 VGSS Gate-Source Voltage 25 ID* Continuous Drain Current IDM* Pulsed Drain Current IS* Diode Continuous Forward Current 2.5 Pulse Source Current 20 Maximum Junction Temperature 150 ISM** TJ TSTG Storage Temperature Range PD* Maximum Power Dissipation RJA* EAS Unit V 4.1 VGS=10V 18 A C -55 to 150 TA=25C 2 TA=100C 0.8 W Thermal Resistance-Junction to Ambient 62.5 C/W Drain-Source Avalanche Energy, L=0.1mH 16.3 mJ Note*Surface Mounted on 1in pad area, t 10 sec. 2 **Pulse test; pulse width 300s, duty cycle 2%. Electrical Characteristics Symbol Parameter (TA = 25C Unless Otherwise Noted) Test Conditions APM8001K Min. Typ. Max. 80 - - - - 1 - - 30 Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) a VGS=0V, IDS=250A VDS=64V, VGS=0V TJ=85C V A Gate Threshold Voltage VDS=VGS, IDS=250A 2.5 3.5 4.5 V Gate Leakage Current VGS=25V, VDS=0V - - 100 nA Drain-Source On-State Resistance VGS=10V, IDS=4.1A - 55 72 m - 0.75 1.1 V - 36 - ns - 30 - nC Diode Characteristics a VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Copyright ANPEC Electronics Corp. Rev. A.1 - Apr., 2009 ISD=2.5A, VGS=0V ISD=2.5A, dISD/dt=100A/s 2 www.anpec.com.tw APM8001K Electrical Characteristics (Cont.) Symbol Parameter Dynamic Characteristics (TA = 25C Unless Otherwise Noted) Test Conditions APM8001K Min. Typ. Max. b RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 2.5 - Ciss Input Capacitance - 1100 - Coss Output Capacitance - 105 - Crss Reverse Transfer Capacitance VGS=0V, VDS=30V, Frequency=1.0MHz - 60 - td(ON) Turn-on Delay Time - 9 17 - 6 12 - 38 69 - 12 23 - 23 32 - 4 - - 6 - Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VDD=40V, RL=40, IDS=1A, VGEN=10V, RG=6 Turn-off Fall Time Gate Charge Characteristics Qg Unit pF ns b Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=40V, VGS=10V, IDS=4.1A nC Note a : Pulse test ; pulse width 300 s, duty cycle 2%. Note b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. A.1 - Apr., 2009 3 www.anpec.com.tw APM8001K Typical Operating Characteristics Drain Current 2.5 5 2.0 4 ID - Drain Current (A) Ptot - Power (W) Power Dissipation 1.5 1.0 3 2 0.5 1 0.0 0 o 0 20 40 60 80 100 120 140 160 TA=25 C,VG=10V 0 20 Tj - Junction Temperature (C) 60 80 100 120 140 160 Tj - Junction Temperature (C) Safe Operation Area Thermal Transient Impedance 2 Normalized Transient Thermal Resistance 50 Rd s(o n) Lim it 10 ID - Drain Current (A) 40 300s 1 1ms 10ms 0.1 100ms 1s DC o TA=25 C 0.01 0.01 0.1 1 10 100 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 2 1E-3 1E-4 500 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Apr., 2009 Duty = 0.5 1 Mounted on 1in pad o RJA :62.5 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM8001K Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 18 72 VGS= 5,6,7,8,9,10V 4V 16 RDS(ON) - On - Resistance (m) 68 ID - Drain Current (A) 14 12 10 8 3.5V 6 4 3V 2 0 0.0 64 60 52 48 44 40 0.5 1.0 1.5 2.0 VGS=10V 56 2.5 3.0 0 2 4 6 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 90 1.8 1.6 Normalized Threshold Voltage 85 RDS(ON) - On Resistance (m) 10 IDS =250A IDS=4.1A 80 75 70 65 60 55 50 8 1.4 1.2 1.0 0.8 0.6 0.4 0.2 2 3 4 5 6 7 8 9 0.0 -50 -25 10 VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Apr., 2009 0 25 50 75 100 125 150 Tj - Junction Temperature (C) 5 www.anpec.com.tw APM8001K Typical Operating Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 20 2.0 IDS = 4.1A 1.8 10 IS - Source Current (A) Normalized On Resistance VGS = 10V 1.6 1.4 1.2 1.0 0.8 o Tj=150 C o Tj=25 C 1 0.6 0.4 o 0.2 -50 -25 RON@Tj=25 C: 55m 0 25 50 75 0.1 0.0 100 125 150 Tj - Junction Temperature (C) 0.2 0.4 1.0 1.2 1.4 Gate Charge 10 1400 VDS=40V Frequency=1MHz 9 VGS - Gate - source Voltage (V) 1200 Ciss C - Capacitance (pF) 0.8 VSD - Source - Drain Voltage (V) Capacitance 1000 800 600 400 200 0 0.6 Coss Crss 0 5 10 15 20 IDS= 4.1A 8 7 6 5 4 3 2 1 25 30 35 0 40 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Apr., 2009 0 5 10 15 20 25 QG - Gate Charge (nC) 6 www.anpec.com.tw APM8001K Package Information SOP-8 D E E1 SEE VIEW A h X 45 c A 0.25 b GAUGE PLANE SEATING PLANE A1 A2 e L VIEW A S Y M B O L SOP-8 INCHES MILLIMETERS MIN. MAX. A MIN. MAX. 1.75 0.069 0.010 0.004 0.25 A1 0.10 A2 1.25 b 0.31 0.51 0.012 0.020 c 0.17 0.25 0.007 0.010 D 4.80 5.00 0.189 0.197 E 5.80 6.20 0.228 0.244 E1 3.80 4.00 0.150 0.157 e 0.049 1.27 BSC 0.050 BSC h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 0 0 8 0 8 Note: 1. Follow JEDEC MS-012 AA. 2. Dimension "D" does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension "E" does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 10 mil per side. Copyright ANPEC Electronics Corp. Rev. A.1 - Apr., 2009 7 www.anpec.com.tw APM8001K Carrier Tape & Reel Dimensions P0 P2 P1 A B0 W F E1 OD0 K0 A0 A OD1 B B T SECTION A-A SECTION B-B H A d T1 Application A 330.0 2.00 P0 SOP-8 4.00.10 H T1 C d D W E1 F 12.4+2.00 13.0+0.50 0.05 50 MIN. 1.5 MIN. 20.2 MIN. 12.00.30 1.750.10 5.5 -0.00 -0.20 P1 P2 D0 D1 T A0 B0 K0 1.5+0.10 0.6+0.00 8.00.10 2.00.05 6.400.20 5.200.20 2.100.20 1.5 MIN. -0.00 -0.40 (mm) Devices Per Unit Package Type Unit Quantity SOP-8 Tape & Reel 2500 Copyright ANPEC Electronics Corp. Rev. A.1 - Apr., 2009 8 www.anpec.com.tw APM8001K Taping Direction Information SOP-8 USER DIRECTION OF FEED Classification Profile Copyright ANPEC Electronics Corp. Rev. A.1 - Apr., 2009 9 www.anpec.com.tw APM8001K Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 C 150 C 60-120 seconds 150 C 200 C 60-120 seconds 3 C/second max. 3C/second max. 183 C 60-150 seconds 217 C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 C/second max. 6 C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process - Classification Temperatures (Tc) 3 Package Volume mm Thickness <350 <2.5 mm 235 C 2.5 mm Volume mm 350 220 C 220 C 3 220 C Table 2. Pb-free Process - Classification Temperatures (Tc) Package Thickness <1.6 mm 1.6 mm - 2.5 mm 2.5 mm Volume mm <350 260 C 260 C 250 C 3 3 Volume mm 350-2000 260 C 250 C 245 C Volume mm >2000 260 C 245 C 245 C 3 Reliability Test Program Test item SOLDERABILITY HOLT PCT TCT Method JESD-22, B102 JESD-22, A108 JESD-22, A102 JESD-22, A104 Copyright ANPEC Electronics Corp. Rev. A.1 - Apr., 2009 10 Description 5 Sec, 245C 1000 Hrs, Bias @ 125C 168 Hrs, 100%RH, 2atm, 121C 500 Cycles, -65C~150C www.anpec.com.tw APM8001K Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 2F, No. 11, Lane 218, Sec 2 Jhongsing Rd., Sindain City, Taipei County 23146, Taiwan Tel : 886-2-2910-3838 Fax : 886-2-2917-3838 Copyright ANPEC Electronics Corp. Rev. A.1 - Apr., 2009 11 www.anpec.com.tw