Dual N-Channel Enhancement Mode MOSFET
Copyright ANPEC Electronics Corp.
Rev. A.1 - Apr., 2009 www.anpec.com.tw1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM8001K
Features
Applications
• Power Management in DC/DC Converter, DC/
AC Inverter Systems.
Pin Description
Ordering and Marking Information
N-Channel MOSFET
• 80V/4.1A,
RDS(ON) =55mΩ(Typ.) @ VGS = 10V
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
G1
S1
D1 D1
G2
S2
D2 D2
SOP-8
S1G1S2G2
D1D1D2D2
APM8001
Handling Code
Temperature Range
Package Code
Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
APM8001 K : APM8001
XXXXX XXXXX - Date Code
Assembly Material
Copyright ANPEC Electronics Corp.
Rev. A.1 - Apr., 2009 www.anpec.com.tw2
APM8001K
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter Rating Unit
VDSS Drain-Source Voltage 80
VGSS Gate-Source Voltage ±25 V
ID* Continuous Drain Current 4.1
IDM* Pulsed Drain Current VGS=10V 18
IS* Diode Continuous Forward Current 2.5
ISM** Pulse Source Current 20
A
TJ Maximum Junction Temperature 150
TSTG Storage Temperature Range -55 to 150 °C
TA=25°C 2
PD* Maximum Power Dissipation TA=100°C 0.8 W
RθJA* Thermal Resistance-Junction to Ambient 62.5 °C/W
EAS Drain-Source Avalanche Energy, L=0.1mH 16.3 mJ
Note：*Surface Mounted on 1in2 pad area, t ≤ 10 sec.
**Pulse test; pulse width ≤ 300µs, duty cycle ≤ 2%.
APM8001K
Symbol
Parameter Test Conditions Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 80 - - V
VDS=64V, VGS=0V - - 1
IDSS Zero Gate Voltage Drain Current
TJ=85°C
- - 30 µA
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 2.5 3.5 4.5 V
IGSS Gate Leakage Current VGS=±25V, VDS=0V - - ±100
nA
RDS(ON) a
Drain-Source On-State Resistance
VGS=10V, IDS=4.1A - 55 72 mΩ
Diode Characteristics
VSDa Diode Forward Voltage ISD=2.5A, VGS=0V - 0.75
1.1 V
trr Reverse Recovery Time - 36 - ns
Qrr Reverse Recovery Charge ISD=2.5A, dISD/dt=100A/µs
- 30 - nC
Copyright ANPEC Electronics Corp.
Rev. A.1 - Apr., 2009 www.anpec.com.tw3
APM8001K
Electrical Characteristics (Cont.) (TA = 25°C Unless Otherwise Noted)
APM8001K
Symbol
Parameter Test Conditions Min.
Typ.
Max.
Unit
Dynamic Characteristics b
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 2.5 - Ω
Ciss Input Capacitance - 1100
-
Coss Output Capacitance - 105
-
Crss Reverse Transfer Capacitance
VGS=0V,
VDS=30V,
Frequency=1.0MHz - 60 - pF
td(ON) Turn-on Delay Time - 9 17
Tr Turn-on Rise Time - 6 12
td(OFF) Turn-off Delay Time - 38 69
Tf Turn-off Fall Time
VDD=40V, RL=40Ω,
IDS=1A, VGEN=10V,
RG=6Ω - 12 23
ns
Gate Charge Characteristics b
Qg Total Gate Charge - 23 32
Qgs Gate-Source Charge - 4 -
Qgd Gate-Drain Charge
VDS=40V, VGS=10V,
IDS=4.1A - 6 -
nC
Note a : Pulse test ; pulse width ≤ 300 µs, duty cycle ≤ 2%.
Note b : Guaranteed by design, not subject to production testing.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Apr., 2009 www.anpec.com.tw4
APM8001K
Typical Operating Characteristics
ID - Drain Current (A)
Drain Current
Tj - Junction Temperature (°C)
Safe Operation Area
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
Square Wave Pulse Duration (sec)
Power Dissipation
Ptot - Power (W)
Tj - Junction Temperature (°C)
ID - Drain Current (A)
Normalized Transient Thermal Resistance
0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
1E-4 1E-3 0.01 0.1 1 10 30
1E-3
0.01
0.1
1
2
Mounted on 1in2 pad
RθJA :62.5 oC/W
0.01
0.02
0.05
0.1
0.2
Single Pulse
Duty = 0.5
020 40 60 80 100 120 140 160
0
1
2
3
4
5
TA=25oC,VG=10V
0.01 0.1 110 100 500
0.01
0.1
1
10
50
300µs
Rds(on) Limit
1s
TA=25oC
10ms
100ms
DC
1ms
Copyright ANPEC Electronics Corp.
Rev. A.1 - Apr., 2009 www.anpec.com.tw5
APM8001K
RDS(ON) - On - Resistance (mΩ)
Drain-Source On Resistance
ID - Drain Current (A)
Tj - Junction Temperature (°C)
Gate Threshold Voltage
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Output Characteristics
VGS - Gate - Source Voltage (V)
Normalized Threshold Voltage
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
RDS(ON) - On Resistance (mΩ)
-50 -25 0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8 IDS =250µA
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
2
4
6
8
10
12
14
16
18 4V
3.5V
3V
VGS= 5,6,7,8,9,10V
0 2 4 6 8 10
40
44
48
52
56
60
64
68
72
VGS=10V
2 3 4 5 6 7 8 9 10
50
55
60
65
70
75
80
85
90
IDS=4.1A
Copyright ANPEC Electronics Corp.
Rev. A.1 - Apr., 2009 www.anpec.com.tw6
APM8001K
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
Normalized On Resistance
Tj - Junction Temperature (°C)
C - Capacitance (pF)
VSD - Source - Drain Voltage (V)
Source-Drain Diode Forward
IS - Source Current (A)
Capacitance Gate Charge
QG - Gate Charge (nC)
VGS - Gate - source Voltage (V)
Typical Operating Characteristics (Cont.)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.1
1
10
20
Tj=150oC
Tj=25oC
0 5 10 15 20 25 30 35 40
0
200
400
600
800
1000
1200
1400
Frequency=1MHz
Crss Coss
Ciss
-50 -25 0 25 50 75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
RON@Tj=25oC: 55mΩ
VGS = 10V
IDS = 4.1A
0 5 10 15 20 25
0
1
2
3
4
5
6
7
8
9
10 VDS=40V
IDS= 4.1A
Copyright ANPEC Electronics Corp.
Rev. A.1 - Apr., 2009 www.anpec.com.tw7
APM8001K
Package Information
SOP-8
S
Y
M
B
O
LMIN. MAX.
1.75
0.10
0.17 0.25
0.25
A
A1
c
D
E
E1
e
h
L
MILLIMETERS
b0.31 0.51
SOP-8
0.25 0.50
0.40 1.27
MIN. MAX.
INCHES
0.069
0.004
0.012 0.020
0.007 0.010
0.010 0.020
0.016 0.050
0
0.010
1.27 BSC 0.050 BSC
A2 1.25 0.049
0
°
8
°
0
°
8
°
D
e
E
E1
SEE VIEW A
cb
h X 45
°
A
A1A2
L
VIEW A
0.25
SEATING PLANE
GAUGE PLANE
Note: 1. Follow JEDEC MS-012 AA.
2. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension “E” does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.
3.80
5.80
4.80
4.00
6.20
5.00 0.189 0.197
0.228 0.244
0.150 0.157
Copyright ANPEC Electronics Corp.
Rev. A.1 - Apr., 2009 www.anpec.com.tw8
APM8001K
Application
A H T1 C d D W E1 F
330.0±
2.00 50 MIN.
12.4+2.00
-0.00
13.0+0.50
-0.20
1.5 MIN.
20.2 MIN.
12.0±0.30
1.75±0.10
5.5±0.05
P0 P1 P2 D0 D1 T A0 B0 K0
SOP-8
4.0±0.10
8.0±0.10
2.0±0.05
1.5+0.10
-0.00
1.5 MIN.
0.6+0.00
-0.40
6.40±0.20
5.20±0.20
2.10±0.20
(mm)
Carrier Tape & Reel Dimensions
H
T1
A
d
A
E1
A
B
W
F
T
P0
OD0
BA0
P2
K0
B0
SECTION B-B
SECTION A-A
OD1
P1
Devices Per Unit
Package Type Unit Quantity
SOP-8 Tape & Reel 2500
Copyright ANPEC Electronics Corp.
Rev. A.1 - Apr., 2009 www.anpec.com.tw9
APM8001K
Taping Direction Information
SOP-8
USER DIRECTION OF FEED
Classification Profile
Copyright ANPEC Electronics Corp.
Rev. A.1 - Apr., 2009 www.anpec.com.tw10
APM8001K
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
100 °C
150 °C
60-120 seconds
150 °C
200 °C
60-120 seconds
Average ramp-up rate
(Tsmax to TP) 3 °C/second max. 3°C/second max.
Liquidous temperature (TL)
Time at liquidous (tL) 183 °C
60-150 seconds 217 °C
60-150 seconds
Peak package body Temperature
(Tp)* See Classification Temp in table 1 See Classification Temp in table 2
Time (tP)** within 5°C of the specified
classification temperature (Tc) 20** seconds 30** seconds
Average ramp-down rate (Tp to Tsmax)
6 °C/second max. 6 °C/second max.
Time 25°C to peak temperature 6 minutes max. 8 minutes max.
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Classification Reflow Profiles
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness Volume mm3
<350 Volume mm3
350-2000 Volume mm3
>2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
≥2.5 mm 250 °C 245 °C 245 °C
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Thickness Volume mm3
<350 Volume mm3
≥350
<2.5 mm 235 °C 220 °C
≥2.5 mm 220 °C 220 °C
Reliability Test Program
Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HOLT JESD-22, A108 1000 Hrs, Bias @ 125°C
PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -65°C~150°C
Copyright ANPEC Electronics Corp.
Rev. A.1 - Apr., 2009 www.anpec.com.tw11
APM8001K
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838
