BC857S BC857S E2 B2 C1 C2 SC70-6 Mark: 3C B1 pin #1 E1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. PNP Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 200 mA. Sourced from Process 68. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCES Collector-Base Voltage 50 V VCBO Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient 1998 Fairchild Semiconductor Corporation Max Units BC857S 300 2.4 415 mW mW/C C/W 4 (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 45 V V(BR)CES Collector-Base Breakdown Voltage IC = 10 A, IE = 0 50 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 A, IE = 0 50 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 A, IC = 0 5.0 ICBO Collector-Cutoff Current VCB = 30 V VCB = 30 V, TA = 150C V 15 4.0 nA A ON CHARACTERISTICS hFE DC Current Gain IC = 2.0 mA, VCE = 5.0 V VCE(sat) Collector-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5.0 mA IC = 2.0 mA, VCE = 5.0 V IC = 10 mA, VCE = 5.0 V 125 630 0.3 0.65 0.75 0.82 0.6 V V V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cobo NF Output Capacitance Noise Figure IC = 10 mA, VCE = 5.0, f = 100 mHz VCB = 10 V, f = 1.0 MHz 200 MHz 3.5 pF IC = 0.2 mA, VCE = 5.0, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz 2.5 dB NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. Typical Pulsed Current Gain vs Collector Current 500 V CE = 5V 400 125 C 300 25 C 200 100 0 0.01 - 40 C 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) VCESAT - COLLECTOR EMITTE R VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.3 0.25 = 10 0.2 0.15 25 C 0.1 0.05 0 0.1 125 C - 40 C 1 10 100 I C - COLLECTOR CURRE NT (mA) 300 BC857S PNP Multi-Chip General Purpose Amplifier (continued) (continued) Base-Emitter Saturation Voltage vs Collector Current 1.2 = 10 1 - 40 C 0.8 25 C 0.6 125 C 0.4 0.2 0 0.1 1 10 100 I C - COLLECTOR CURRE NT (mA) 300 V BEON - BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EM ITTE R VOLTAGE (V) Typical Characteristics Base Emitter ON Voltage vs Collector Current 1 0.8 - 40C 25 C 125 C 0.6 0.4 V CE = 5V 0.2 0 0.1 1 10 I C - COLLECTOR CURRE NT (mA) Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 10 1 0.1 0.01 25 50 75 100 T A - AMBIE NT TEMP ERATURE ( C) 125 BVCER - BREAKDOWN VOLTAGE (V) V CB = 50V 95 90 85 80 75 70 0.1 1 10 100 Input and Output Capacitance vs Reverse Voltage 4 100 Ta = 25C 3 2 1000 RESISTANCE (k ) Collector Saturation Region Ic = 100 uA 300 mA 50 mA 1 f = 1.0 MHz CAPACITANCE (pF) V CE - COLLECTOR-EMITTER VOLTAGE (V) I CBO - COLLE CTOR CURRENT (nA) Collector-Cutoff Current vs Ambient Temperature 100 100 200 10 Cib Cob 0 100 300 700 I B - BASE CURRENT (uA) 2000 4000 0.1 1 10 V CE - COLLECTOR VOLTAGE (V) 100 BC857S PNP Multi-Chip General Purpose Amplifier (continued) f T - GAIN BANDWIDTH PRODUCT (MHz) Typical Characteristics (continued) Switching Times vs Collector Current Gain Bandwidth Product vs Collector Current 300 40 Vce = 5V 270 ts 240 30 TIME (nS) 210 20 180 IB1 = IB2 = Ic / 10 V cc = 10 V 150 120 90 10 tf 60 30 0 10 20 50 100 150 td I C - COLLECTOR CURRENT (mA) 20 30 50 100 200 I C - COLLECTOR CURRENT (mA) Power Dissipation vs Ambient Temperat ure PD - POWE R DIS SIPATION (W) 1 0 10 500 400 SC70 -6 300 200 100 0 0 25 50 75 100 TE MPE RATURE (C) tr 125 150 300 BC857S PNP Multi-Chip General Purpose Amplifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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