ES1A – ES1M
1.0A SURFACE MOUNT SUPER FAST RECTIFIER
Data Sheet 2621, Rev. A
Features
Glass Passivated Die Construction
Ideally Suited for Automatic Assembly B
Low Forward Voltage Drop, High Efficiency
Surge Overload Rating to 30A Peak
Low Power Loss A
Super-Fast Recovery Time F
Plastic Case Material has UL Flammability
Classification Rating 94V-O C H G
E
Mechanical Data
Case: Low Profile Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.064 grams (approx.)
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
SMA/DO-214AC
Dim Min Max Min Max
A 2.50 2.90 0.098 0.114
B 4.00 4.60 0.157 0.181
C 1.40 1.60 0.055 0.063
D 0.152 0.305 0.006 0.012
E 4.80 5.28 0.189 0.208
F 2.00 2.44 0.079 0.096
G0.051 0.203 0.002 0.008
H 0.76 1.52 0.030 0.060
In mm In inch
Characteristic Symbol ES1A ES1B ES1C ES1D ES1E ES1G ES1J ES1K ES1M Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR 50 100 150 200 300 400 600 800 1000 V
RMS Reverse Voltage VR(RMS) 35 70 105 140 210 280 420 560 700 V
Average Rectified Output Current @TL = 75°C IO 1.0 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method) IFSM 30 A
Forward Voltage @IF = 1.0A VFM 0.975 1.35 1.60 V
Peak Reverse Current @T
A = 25°C
At Rated DC Blocking Voltage @TA = 100°C IRM 5.0
500 µA
Reverse Recovery Time (Note 1) trr 50 60 100 nS
Typical Junction Capacitance (Note 2) Cj 45 pF
Typical Thermal Resistance (Note 3) RθJL 35 K/W
Operating and Storage Temperature Range Tj, TSTG -50 to +150 °C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
SENSITRON
SEMICONDUCTOR
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0.01
0.1
1.0
10
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
I , INSTANTANEOUS FORWARD CURRENT (A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
T = 25 C
Pulse width = 300 s
j°µ
10
20
30
0
1 10 100
I , PEAK FORWARD SURGE CURRENT (A)
FSM
NUMBER OF CYCLES AT 60Hz
Fig. 3 Peak Forward Surge Current
Pulse width
8.3 ms single half-sine-wave
(JEDEC method)
50V DC
Approx
50 NI (Non-inductive)10 NI
1.0
NI
Oscilloscope
(Note 1)
Pulse
Generator
(Note 2)
Device
Under
Test
trr
Settimebasefor5/10ns/cm
+0.5A
0A
-0.25A
-1.0A
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF.
2. Rise Time = 10ns max. Input Impedance = 50 .
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
(+)
(+)
(-)
(-)
1
10
100
1 10 100
C , CAPACITANCE (pF)
j
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
R
T = 25 C
f = 1.0MHz
j°
0
0.25
0.50
0.75
1.00
02550
75 100 125 150 175
I , AVERAGE FWD RECTIFIED CURRENT (A)
(AV)
T,LEAD TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
L°
Singlephasehalfwave
ResistiveorInductiveload
ES1A -ES1D ES1E -ES1G
ES1J-ES1M
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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
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medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
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property claims or any other problems that ma y result from applications of information, products or circuits described in the datasheets.
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use at a value exceeding the absolute maximum rating.
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