SuperSOT
SOT23 PNP SILICON POWER
(SWITCHING) TRANSISTORS
ISSUE 3 JUNE 1996
FEATURES
* 625mW POWER DISSIPATION
*I
C CONT 2.5A
*I
C Up To 10A Peak Pulse Current
* Excellent hfe Characteristics Up To 10A (pulsed)
* Extremely Low Saturation Voltage E.g. 10mV Typ.
* Exhibits extremely low equivalent on-resistance; RCE(sat)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
FMMT
717
FMMT
718
FMMT
720
FMMT
722
FMMT
723 UNIT
Collector-Base Voltage VCBO -12 -20 -40 -70 -100 V
Collector-Emitter Voltage VCEO -12 -20 -40 -70 -100 V
Emitter-Base Voltage VEBO -5 -5 -5 -5 -5 V
Peak Pulse Current** ICM -10 -6 -4 -3 -2.5 A
Continuous Collector Current IC-2.5 -1.5 -1.5 -1.5 -1 A
Base Current IB-500 mA
Power Dissipation at Tamb
=25°C* Ptot 625 mW
Operating and Storage
Temperature Range
Tj:Tstg -55 to +150 °C
*Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
C
B
E
3 - 159
FMMT717 FMMT718
FMMT720 FMMT722
FMMT723
DEVICE TYPE COMPLEMENT PARTMARKING RCE(sat)
FMMT717 FMMT617 717 72mΩ at 2.5A
FMMT718 FMMT618 718 97mΩ at 1.5A
FMMT720 FMMT619 720 163mΩ at 1.5A
FMMT722 722 -
FMMT723 FMMT624 723 -
DIM Millimeters Inches
Min Max Min Max
A 2.67 3.05 0.105 0.120
B 1.20 1.40 0.047 0.055
C 1.10 0.043
D 0.37 0.53 0.0145 0.021
F 0.085 0.15 0.0033 0.0059
G NOM 1.9 NOM 0.075
K 0.01 0.10 0.0004 0.004
L 2.10 2.50 0.0825 0.0985
N NOM 0.95 NOM 0.37
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Fax: (44)161-627 5467
Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by
Streitfeldstraße 19 47 Mall Drive, Unit 4 3510 Metroplaza, Tower 2 agents and distributors in
D-81673 München Commack NY 11725 Hing Fong Road, major countries world-wide
Germany USA Kwai Fong, Hong Kong Zetex plc 1997
Telefon: (49) 89 45 49 49 0 Telephone: (516) 543-7100 Telephone:(852) 26100 611 Internet:
Fax: (49) 89 45 49 49 49 Fax: (516) 864-7630 Fax: (852) 24250 494 http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
0.0
0.2
0.4
0.6
0.8
1.0
Collector Current
I
C
/I
B
=10
Collector Current
10A
Collector Current
Collector Current
0.0
I
C
/I
B
=20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
CE
=2V
0
450
225
V
CE
=2V
0.2
0.0
1.0
0.8
0.6
0.4
10
1.0
0.1
0.01
SINGLE PULSE TEST T
amb
= 25 deg C
VCE (VOLTS)
TYPICAL CHARACTERISTICS
-55°C
100°C
25°C
25°C
100°C
-55°C
25°C
100°C
-55°C
25°C
100°C
-55°C
D.C.
1s
100ms
10ms
1ms
100
µ
s
0.1
10A1mA
10A1mA
1mA
10A1mA
Safe Operating Area
0.6
0.2
0.4
1.4
1.6
10m
1
1m 10m
VCE(SAT) v IC
IC- Collector Current (A)
100m 101
I
C
/I
B
=10
I
C
/I
B
=20
I
C
/I
B
=50
+25°C
100m
VCE(SAT) vs IC
10mA 100mA 1A
VBE(SAT) vs IC
10mA 100mA 1A
hFE vs IC
10mA 100mA 1A
VBE(ON) vs IC
10mA 100mA 1A 1.0 10 100
FMMT720
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL
FMMT722 FMMT723
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-70 -150 -100 -200 V I
C
=-100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-70 -125 -100 -160 V I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 -8.8 -5 -8.8 V I
E
=-100µA
Collector Cut-Off
Current
I
CBO
-100
-100
nA
nA
V
CB
=-60V
V
CB
=-80V
Emitter Cut-Off
Current
I
EBO
-100 -100 nA V
EB
=-4V
Collector Emitter
Cut-Off Current
I
CES
-100
-100
nA
nA
V
CES
=-60V
V
CES
=-80V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-35
-135
-140
-175
-50
-200
-220
-260
-50
-125
-210
-80
-200
-330
mV
mV
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-10mA*
I
C
=-0.5A, I
B
=-20mA*
I
C
=-0.5A, I
B
=-50mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-1A, I
B
=-150mA*
I
C
=-1.5A, I
B
=-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.94 -1.05
-0.89 -1.0 V I
C
=-1A, I
B
=-150mA*
I
C
=-1.5A, I
B
=-200mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.78 -1.0
-0.71 -1.0 V I
C
=-1A, V
CE
=-10V*
I
C
=-1.5A, V
CE
=-5V*
Static Forward
Current Transfer
Ratio
h
FE
300
300
175
40
470
450
275
60
10
300
300
250
475
450
375
250
30
I
C
=-10mA, V
CE
=-5V*
I
C
=-10mA, V
CE
=-10V*
I
C
=-0.1A, V
CE
=-5V*
I
C
=-0.1A, V
CE
=-10V*
I
C
=-0.5A, V
CE
=-10V*
I
C
=-1A, V
CE
=-5V*
I
C
=-1A, V
CE
=-10V*
I
C
=-1.5A, V
CE
=-5V*
I
C
=-1.5A, V
CE
=-10V*
I
C
=-3A, V
CE
=-5V*
Transition
Frequency
f
T
150 200 150 200 MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance C
obo
14 20 13 20 pF V
CB
=-10V, f=1MHz
Turn-On Time t
(on)
40 50 ns V
CC
=-50V, I
C
=-0.5A
I
B1
=I
B2
=-50mA
Turn-Off Time t
(off)
700 760 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FMMT722
FMMT723
3 - 164 3 - 165
-55°C
100°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Collector Current
I
C
/I
B
=10
Collector Current
Collector Current
Collector Current
25°C
100°C
-55°C
25°C
100°C
-55°C
I
C
/I
B
=30
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
CE
=2V
0
450
225
25°C
100°C
-55°C
V
CE
=2V
0.2
0.0
1.0
0.8
0.6
0.4
D.C.
1s
100ms
10ms
1ms
100
µ
s
10
1.0
0.1
0.01
VCE (VOLTS)
Safe Operating Area
TYPICAL CHARACTERISTICS
0.1
10A1mA
10A1mA
10A 1mA
10A 1mA
1.2
1.4
0.6
0.5
0.40.4
0.3
0.2
0.1
0.0
1.4
100m
1
10m
1m
1m 10m 100m 1 10
IC- Collector Current (A)
VCE(SAT) v IC
I
C
/I
B
=10
I
C
/I
B
=30
I
C
/I
B
=50
+25°C
10mA
100mA 1A
VCE(SAT) vs IC
VBE(SAT) vs IC
10mA
100mA 1A
10mA 100mA 1A
hFE vs IC
VBE(ON) vs IC
10mA 100mA 1A 1.0 10 100
SINGLE PULSE TEST T
amb
= 25 deg C
FMMT718
0.0
0.2
0.4
0.6
0.8
1.0
Collector Current
I
C
/I
B
=5
Collector Current
10A
Collector Current
10A
Collector Current
10A
Collector Current
10A
I
C
/I
B
=10
I
C
/I
B
=20
I
C
/I
B
=50
25°C I
C
/I
B
=10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
CE
=5V
450
225
V
CE
=5V
0.2
0.0
1.0
0.8
0.6
0.4
10
1.0
0.1
0.01
SINGLE PULSE TEST T
amb
= 25 deg C
VCE (VOLTS)
TYPICAL CHARACTERISTICS
-55°C
100°C
25°C
25°C
100°C
-55°C
25°C
100°C
-55°C
25°C
100°C
-55°C
D.C.1s
100ms
10ms
1ms
1mA
0.1
1mA
1mA
1mA
10A1mA
0.0
0.1
0.2
0.3
0.4
0.5
0.0
Safe Operating Area
I
C
/I
B
=5
0.6 0.6
0.5
0.4
0.3
0.2
0.1
1.4
1.6 1.2
10mA 1A100mA
VBE(SAT) vs IC
10mA 100mA 1A
VCE(SAT) vs IC
10mA 100mA 1A
VBE(SAT) vs IC
10mA 1A100mA
hFE vs IC
VBE(ON) vs IC
10mA 100mA 1A
100
µ
s
1 10 100
FMMT722
3 - 166 3 - 163
DERATING CURVE
* Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate
MAXIMUM TRANSIENT THERMAL RESISTANCE
FMMT617 FMMT624
FMMT618 FMMT625
FMMT619
THERMAL CHARACTERISTICS AND DERATING INFORMATION
FMMT717 FMMT722
FMMT718 FMMT723
FMMT720
SuperSOT Series
3 - 158