A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OCNONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBOIC = 5 mA 45 V
BVCER IC = 20 mA RBE = 10 Ω45 V
BVEBO IE = 5 mA 3.5 V
ICBO VCE = 28 V 500 µµA
hFE VCE = 5.0 V IC = 100 mA 15 150 ---
FtVCE = 20 V IC = 100 mA 600 MHz
Cob VCB = 28 V f = 1.0 MHz 7.0 pF
PG
ηηCVCE = 28 V POUT = 3.0 W f = 400 MHz 12
50 13
60 dB
%
NPN SILICON RF POWER TRANSISTOR
C3-28
DESCRIPTION:
The C3-28 is Designed for Class A, B
and C Power Amplifier Applications Up
to 500 MHz.
FEATURES:
• PG = 13 dB Typ. at 3.0 W/400 MHz
• Emitter Ballasting for Ruggedness
• Omnigold™ Metallization System
MAXIMUM RATINGS
IC1.0 A
VCB 45 V
PDISS 12 W @ TC = 25 OC
TJ-65 to +200 OC
TSTG -65 to +150 OC
θθJC 15 OC/W
PACKAGE STYLE .280 4L STUD
ORDER CODE: ASI10810
MINIMUM
inches / mm
.003 / 0.08
.270 / 6.86
.117 / 2.97
B
C
D
E
F
G
A
MAXIMUM
.285 / 7.24
.137 / 3.48
.007 / 0.18
inches / mm
H.245 / 6.22 .255 / 6.48
DIM
1.010 / 25.65 1.055 / 26.80
I
J.217 / 5.51
.220 / 5.59
K
.175 / 4.45 .285 / 7.24.275 / 6.99
.572 / 14.53
.640 / 16.26
.130 / 3.30
.230 /5.84
G
K
H
F
E
D C
B
45° A
#8-32 UNC
I
J
E
E
B
C
