DATA SH EET
Product specification
Supersedes data of 2001 Oct 12 2002 Mar 04
DISCRETE SEMICONDUCTORS
BAT54 series
Schottky barrier (double) diodes
o
ok, halfpage
M3D088
2002 Mar 04 2
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT54 series
FEATURES
Low forward voltage
Guard ring protected
Small plastic SMD package.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diodes encapsulated in a SOT23
small plastic SMD package. Single diodes and double
diodes with different pinning are available.
MARKING
Note
1. = p : Made in Hong Kong.
= t : Made in Malaysia.
= W: Made in China.
PINNING
TYPE NUMBER MARKING CODE(1)
BAT54 L4
BAT54A L42 or V3
BAT54C L43 or W1
BAT54S L44 or V4
PIN DESCRIPTION
BAT54 BAT54A BAT54C BAT54S
1a k
1a
1a
1
2 n.c. k2a2k2
3k a
1
,a
2k
1
,k
2k
1
,a
2
handbook, 2 columns
21
3
MGC421
Top view
Fig.1 Simplified outline (SOT23) and pin
configuration.
3
12
MLC360
3
12
MLC359
3
12
MLC358
Fig.2 Diode configuration and symbol.
3
12
n.c.
MLC357
(1) BAT54 (2) BAT54A
(3) BAT54C (4) BAT54S
2002 Mar 04 3
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT54 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Refer to SOT23 standard mounting conditions.
CHARACTERISTICS
Tamb =25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRcontinuous reverse voltage 30 V
IFcontinuous forward current 200 mA
IFRM repetitive peak forward current tp1s;δ≤0.5 300 mA
IFSM non-repetitive peak forward current tp<10ms 600 mA
Tstg storage temperature 65 +150 °C
Tjjunction temperature 125 °C
Per device
Ptot total power dissipation Tamb 25 °C230 mW
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to
ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
VFforward voltage see Fig.3
IF= 0.1 mA 240 mV
IF= 1 mA 320 mV
IF= 10 mA 400 mV
IF= 30 mA 500 mV
IF= 100 mA 800 mV
IRreverse current VR= 25 V; see Fig.4 2 µA
trr reverse recovery time when switched from IF=10mA
to IR= 10 mA; RL= 100 ;
measured at IR= 1 mA;
see Fig.6
5ns
C
ddiode capacitance f = 1 MHz; VR= 1 V; see Fig.5 10 pF
2002 Mar 04 4
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT54 series
handbook, halfpage
10
IF
VF (V)
3
10
(mA)
2
10
1
10
1
1.20.80.40
MSA892
(3)(2)(1)
(3)(2)(1)
(1) Tamb = 125 °C.
(2) Tamb =85°C.
(3) Tamb =25°C.
Fig.3 Forward current as a function of forward
voltage; typical values.
0102030
V (V)
R
10
3
IR
(µA)
10
2
10
1
10
1
(1)
(2)
(3)
MSA893
(1) Tamb = 125 °C.
(2) Tamb =85°C.
(3) Tamb =25°C.
Fig.4 Reverse current as a function of reverse
voltage; typical values.
h
andbook, halfpage
0102030
0
5
10
15
VR (V)
Cd
(pF)
MSA891
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tamb =25°C.
Fig.6 Reverse recovery definitions.
h
andbook, halfpage
90%
10%
tf
Q
dI
dt
t
IF
IR
MRC129 - 1
F
r
2002 Mar 04 5
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT54 series
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
2002 Mar 04 6
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT54 series
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany otherconditionsabove thosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warrantythatsuchapplicationswill be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusing orsellingthese products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseofanyoftheseproducts,conveys nolicence ortitle
under any patent, copyright, or mask work right to these
products,and makes norepresentationsor warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2002 Mar 04 7
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAT54 series
NOTES
© Koninklijke Philips Electronics N.V. 2002 SCA74
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Printed in The Netherlands 613514/04/pp8 Date of release: 2002 Mar 04 Document order number: 9397 750 09408