Semiconductor Group 1 Sep-12-1996
BSP 324
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
•
V
GS(th) = 1.5 ...2.5 V
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Type
V
DS
I
D
R
DS(on) Package Marking
BSP 324 400 V 0.17 A 25 ΩSOT-223 BSP 324
Type Ordering Code Tape and Reel Information
BSP 324 Q67000-S215 E6327
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage
V
DS 400 V
Drain-gate voltage
R
GS = 20 kΩ
V
DGR 400
Gate source voltage
V
GS ± 14
Gate-source peak voltage,aperiodic
V
gs ± 20
Continuous drain current
T
A = 33 °C
I
D 0.17 A
DC drain current, pulsed
T
A = 25 °C
I
Dpuls 0.68
Power dissipation
T
A = 25 °C
P
tot 1.7 W
Semiconductor Group 2 Sep-12-1996
BSP 324
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature
T
j -55 ... + 150 °C
Storage temperature
T
stg -55 ... + 150
Thermal resistance, chip to ambient air
R
thJA ≤ 72 K/W
Therminal resistance, junction-soldering point 1)
R
thJS ≤ 12
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at
T
j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
GS = 0 V,
I
D = 0.25 mA,
T
j = 25 °C
V
(BR)DSS 400 - - V
Gate threshold voltage
V
GS=
V
DS,
I
D = 1 mA
V
GS(th) 1.5 2 2.5
Zero gate voltage drain current
V
DS = 400 V,
V
GS = 0 V,
T
j = 25 °C
V
DS = 400 V,
V
GS = 0 V,
T
j = 125 °C
I
DSS
-
- 8
10 50
100 nA
µA
Gate-source leakage current
V
GS = 20 V,
V
DS = 0 V
I
GSS - 10 100 nA
Drain-Source on-state resistance
V
GS = 10 V,
I
D = 0.17 A
R
DS(on) - 20 25 Ω
Semiconductor Group 3 Sep-12-1996
BSP 324
Electrical Characteristics, at
T
j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
DS≥ 2 *
I
D *
R
DS(on)max,
I
D = 0.17 A
g
fs 0.1 0.17 - S
Input capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
iss - 90 120 pF
Output capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
oss - 10 15
Reverse transfer capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
rss - 4 6
Turn-on delay time
V
DD = 30 V,
V
GS = 10 V,
I
D = 0.21 A
R
GS = 50 Ω
t
d(on)
- 5 8
ns
Rise time
V
DD = 30 V,
V
GS = 10 V,
I
D = 0.21 A
R
GS = 50 Ω
t
r
- 10 15
Turn-off delay time
V
DD = 30 V,
V
GS = 10 V,
I
D = 0.21 A
R
GS = 50 Ω
t
d(off)
- 18 25
Fall time
V
DD = 30 V,
V
GS = 10 V,
I
D = 0.21 A
R
GS = 50 Ω
t
f
- 15 20
Semiconductor Group 4 Sep-12-1996
BSP 324
Electrical Characteristics, at
T
j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
A = 25 °C
I
S- - 0.17 A
Inverse diode direct current,pulsed
T
A = 25 °C
I
SM - - 0.68
Inverse diode forward voltage
V
GS = 0 V,
I
F = 0.34 A,
T
j = 25 °C
V
SD - 0.85 1.3 V
Reverse recovery time
V
R = 30 V,
I
F=
l
S, d
i
F/d
t
= 100 A/µs
t
rr - 300 - ns
Reverse recovery charge
V
R = 30 V,
I
F=
l
S, d
i
F/d
t
= 100 A/µs
Q
rr - 0.82 - µC
Semiconductor Group 5 Sep-12-1996
BSP 324
Power dissipation
P
tot = ƒ(
T
A)
020 40 60 80 100 120 °C 160
T
A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
W
2.0
P
tot
Drain current
I
D = ƒ(
T
A)
parameter:
V
GS ≥ 10 V
020 40 60 80 100 120 °C 160
T
A
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
A
0.18
I
D
Safe operating area
I
D=f(
V
DS)
parameter :
D
= 0,
T
C=25°C Transient thermal impedance
Z
th JA = ƒ(
t
p)
parameter:
D = t
p /
T
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
Z
thJC
10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group 6 Sep-12-1996
BSP 324
Typ. output characteristics
I
D = ƒ(
V
DS)
parameter:
t
p = 80 µs ,
T
j = 25 °C
0 4 8 12 16 V 22
V
DS
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0.28
0.32
A
0.38
I
D
V
GS [V]
a
a 2.5
b
b 3.0
c
c 3.5
d
d 4.0
e
e 4.5
f
f 5.0
g
g 5.5
h
h 6.0
i
i 7.0
j
j 8.0
k
k 9.0
l
P
tot = 2W
l 10.0
Typ. drain-source on-resistance
R
DS (on) = ƒ(
I
D)
parameter:
t
p = 80 µs,
T
j = 25 °C
0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 A 0.34
I
D
0
10
20
30
40
50
60
Ω
80
R
DS (on)
V
GS [V] =
a
2.5
V
GS [V] =
a
a
3.0
b
b
3.5
c
c
4.0
d
d
4.5
e
e
5.0
f
f
5.5
g
g
6.0
h
h
7.0
i
i
8.0
j
j
9.0
k
k
10.0
Typ. transfer characteristics
I
D
= f
(
V
GS)
parameter:
t
p = 80 µs
012345678V10
V
GS
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
A
0.45
I
D
Typ. forward transconductance
g
fs =
f
(
I
D)
parameter:
t
p = 80 µs,
0.00 0.05 0.10 0.15 0.20 0.25 0.30 A 0.40
I
D
0.00
0.05
0.10
0.15
S
0.25
g
fs
7 Sep-12-1996
Semiconductor Group
BSP 324
Drain-source on-resistance
R
DS (on) = ƒ(
T
j)
parameter:
I
D = 0.17 A,
V
GS = 10 V
-60 -20 20 60 100 °C 160
T
j
0
10
20
30
40
50
60
70
80
Ω
100
R
DS (on)
typ
98%
Gate threshold voltage
V
GS (th) = ƒ(
T
j)
parameter:
V
GS =
V
DS,
I
D = 1 mA
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
V
4.6
V
GS(th)
-60 -20 20 60 100 °C 160
T
j
2%
typ
98%
Typ. capacitances
C
=
f
(
V
DS)
parameter:
V
GS=0V,
f
= 1 MHz
0 5 10 15 20 25 30 V 40
V
DS
0
10
1
10
2
10
3
10
pF
C
C
iss
C
rss
C
oss
Forward characteristics of reverse diode
I
F = ƒ(
V
SD)
parameter:
T
j
, t
p = 80 µs
-3
10
-2
10
-1
10
0
10
A
I
F
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
V
SD
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 150 °C typ
T
j = 150 °C (98%)
Semiconductor Group 8 Sep-12-1996
BSP 324
Drain-source breakdown voltage
V
(BR)DSS = ƒ(
T
j)
-60 -20 20 60 100 °C 160
T
j
360
370
380
390
400
410
420
430
440
450
460
V
480
V
(BR)DSS
Safe operating area
I
D=f(
V
DS)
parameter :
D
= 0.01,
T
C=25°C
Semiconductor Group 9 Sep-12-1996
BSP 324
Package outlines
SOT-223
Dimensions in mm
