BSP 324 SIPMOS (R) Small-Signal Transistor * N channel * Enhancement mode * VGS(th) = 1.5 ...2.5 V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSP 324 400 V 0.17 A 25 SOT-223 BSP 324 Type BSP 324 Ordering Code Q67000-S215 D Tape and Reel Information E6327 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage RGS = 20 k Values 400 V 400 Gate source voltage VGS 14 Gate-source peak voltage,aperiodic Vgs 20 Continuous drain current ID TA = 33 C A 0.17 IDpuls DC drain current, pulsed TA = 25 C 0.68 Ptot Power dissipation TA = 25 C Semiconductor Group Unit W 1.7 1 Sep-12-1996 BSP 324 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA 72 Therminal resistance, junction-soldering point 1) RthJS 12 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 C V 400 - - 1.5 2 2.5 VDS = 400 V, VGS = 0 V, Tj = 25 C - 10 100 nA VDS = 400 V, VGS = 0 V, Tj = 125 C - 8 50 A Gate threshold voltage VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current Gate-source leakage current IDSS IGSS VGS = 20 V, VDS = 0 V Drain-Source on-state resistance - 10 100 RDS(on) VGS = 10 V, ID = 0.17 A Semiconductor Group nA - 2 20 25 Sep-12-1996 BSP 324 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS 2 * ID * RDS(on)max, ID = 0.17 A Input capacitance 0.1 pF - 90 120 - 10 15 - 4 6 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 0.17 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 0.21 A RGS = 50 Rise time - 5 8 - 10 15 - 18 25 - 15 20 tr VDD = 30 V, VGS = 10 V, ID = 0.21 A RGS = 50 Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 0.21 A RGS = 50 Fall time tf VDD = 30 V, VGS = 10 V, ID = 0.21 A RGS = 50 Semiconductor Group 3 Sep-12-1996 BSP 324 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TA = 25 C Inverse diode direct current,pulsed - - 0.68 V 0.85 1.3 trr ns - 300 - Qrr VR = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 0.17 - VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge - VSD VGS = 0 V, IF = 0.34 A, Tj = 25 C Reverse recovery time - ISM TA = 25 C Inverse diode forward voltage A C - 4 0.82 - Sep-12-1996 BSP 324 Power dissipation Ptot = (TA) Drain current ID = (TA) parameter: VGS 10 V 2.0 0.18 W Ptot A 1.6 ID 0.14 1.4 0.12 1.2 0.10 1.0 0.08 0.8 0.06 0.6 0.04 0.4 0.02 0.2 0.0 0.00 0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 TA 120 C 160 TA Safe operating area ID=f(VDS) Transient thermal impedance Zth JA = (tp) parameter: D = tp / T parameter : D = 0, TC=25C 10 2 K/W 10 1 ZthJC 10 0 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 10 -3 single pulse 0.02 0.01 10 -4 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Semiconductor Group 5 Sep-12-1996 BSP 324 Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 0.38 Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 80 l k h ji gf e Ptot = 2W A a 0.32 b c VGS [V] ID d a 2.5 b 3.0 c 3.5 d 4.0 e 4.5 f 5.0 g 5.5 h 6.0 i 7.0 j 8.0 0.28 0.24 0.20 c 0.16 0.12 k 9.0 l 10.0 RDS (on) 60 50 40 30 d f e j h igk 20 b 0.08 10 VGS [V] = 0.04 a 2.5 3.0 a 0.00 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i 7.0 8.0 j 9.0 k 10.0 0 0 4 8 12 16 V 22 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 A 0.34 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 s Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s, 0.25 0.45 A ID gfs 0.35 S 0.30 0.15 0.25 0.20 0.10 0.15 0.10 0.05 0.05 0.00 0 0.00 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 0.00 0.05 0.10 0.15 0.20 0.25 0.30 A ID 0.40 Sep-12-1996 BSP 324 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 0.17 A, VGS = 10 V Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 100 4.6 V 4.0 RDS (on) 80 VGS(th) 70 3.6 3.2 60 2.8 50 2.4 98% typ 2.0 40 98% typ 30 2% 1.6 1.2 20 0.8 10 0.4 0 0.0 -60 -20 20 60 100 C 160 -60 -20 20 60 100 C Tj 160 Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 3 10 0 pF A C IF 10 2 10 -1 Ciss 10 1 10 -2 Coss Tj = 25 C typ Tj = 150 C typ Crss Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 -3 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 Sep-12-1996 BSP 324 Safe operating area ID=f(VDS) Drain-source breakdown voltage V(BR)DSS = (Tj ) parameter : D = 0.01, TC=25C 480 V 460 V(BR)DSS 450 440 430 420 410 400 390 380 370 360 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 Sep-12-1996 BSP 324 Package outlines SOT-223 Dimensions in mm Semiconductor Group 9 Sep-12-1996