MS1579 RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS Features * * * * * * * 470 - 860 MHz 25 VOLTS CLASS A OPERATION INTERNAL INPUT MATCHING POUT = 14 WATTS GP = 8.5 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1579 is a gold metallized, epitaxial silicon NPN transistor designed for Class A, UHF and Band IV, V television transmitters applications. Diffused emitter ballast resistors ensure long term reliability under Class A linear operation. ABSOLUTE MAXIMUM RATINGS (Tcase Tcase = 25 25C) Symbol VCBO VCEO VEBO PDISS IC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Power Dissipation Device Current Junction Temperature Storage Temperature Value Unit 45 25 4.0 65 5.2 +200 -65 to +150 V V V W A C C 2.5 C/W Thermal Data RTH(J-C) Thermal Resistance Junction-case 053-7101 Rev - 11-2002 MS1579 ELECTRICAL SPECIFICATIONS (Tcase = 25 25C) STATIC Symbol BVCBO BVCEO BVEBO HFE Test Conditions IC = 20 mA IC = 40 mA IE = 5 mA VCE = 20 V IE IB IC IC = 0 mA = 0 mA = 0 mA = 0.5 A Min. Value Typ. Max. Unit 45 25 3.0 10 --------- ------200 V V V --- DYNAMIC Symbol Min. Value Typ. Max. Unit POUT f = 845 MHz PIN = 2.0 VCE = 25 V 14 --- --- W GP POUT = 14 W PIN = 2.0 VCE = 25 V 8.5 --- --- dB IMD3 POUT = 14 W PIN = 2.0 VCE = 25 V --- -47 --- dBc f =1 MHz VCB = 25 V --- --- 20 pf COB Conditions Test Conditions VCE = 25 V 053-7101 Rev - 11-2002 ICQ = 2 x 850 mA MS1579 TYPICAL PERFORMANCE 053-7101 Rev - 11-2002 MS1579 TEST CIRCUIT 053-7101 Rev - 11-2002 MS1579 PACKAGE MECHANICAL DATA 053-7101 Rev - 11-2002