ZXGD3006E6
Document Number DS35229 Rev. 6 - 2
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ZXGD3006E6
40V 10A GATE DRIVER IN SOT26
Description
The ZXGD3006E6 is a 40V Gate Driver for switching IGBTs and SiC
MOSFETs. It can transfer up to 10A peak source/sink current into the
gate for effective charging and discharging of a large capacitive load.
The ZXGD3006E6 can drive typically 4A into the low gate impedance
of an IGBT, with just 1mA input from a controller. Also, the turn-on and
turn-off switching behavior of the IGBT can be individually tailored to
suit an application. In particular, by defining the switching
characteristics appropriately, EMI and cross conduction can be
reduced.
Applications
Gate driving IGBTs and SiC MOSFETs in:
DC-DC Converters in Electric Cars
Automotive Active Suspension Systems
Solar Inverters
Power Supplies
Plasma Display Panel Power Modules
Features
High-Gain Buffer with Typically 4A Output from 1mA Input
40V Supply for +20V to -18V Gate Driving to Prevent dV/dt
Induced False Triggering
Emitter-Follower that is Rugged to Latch-Up / Shoot-Through
Issues, and Delivers <10ns Propagation Delay Time
Optimized Pin-Out to Simplify PCB Layout and Reduce
Parasitic Trace Inductances
Near-Zero Quiescent Supply Current
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (ZXGD3006E6Q)
Mechanical Data
Case: SOT26
Case Material: Molded Plastic. ―Green‖ Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads.
Solderable per MIL-STD-202, Method 208
Weight: 0.018 grams (Approximate)
Ordering Information (Note 4)
Compliance
Marking
Reel Size (inches)
Tape Width (mm)
Quantity per Reel
AEC-Q101
3006
7
8
3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See http://www.diodes.com/quality/lead_free/ for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"
and Lead-Free.
3. Halogen and Antimony free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Pin Name
Pin Function
VCC
Supply Voltage High
IN
Driver Input Pin
VEE
Supply Voltage Low
SOURCE
Source Current Output
*
SINK
Sink Current Output *
VCC
IN
VEE
Source
Do Not Connect
Sink
SOT26
Top View
Pin-Out
Top View
* Typically connect SOURCE & SINK
together
ZXGD3006E6
ZXGD3006E6
Document Number DS35229 Rev. 6 - 2
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ZXGD3006E6
Marking Information
Date Code Key
Year
2018
2019
2020
2021
2022
2022
2023
2024
2025
2026
2027
Code
F
G
H
I
J
K
L
M
N
O
P
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Typical Application Circuit
3006 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: F = 2018)
M or M = Month (ex: 9 = September)
SOT26
3006
ZXGD3006E6
VCC
VEE
ZXGD3006E6
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ZXGD3006E6
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Supply Voltage, with Respect to VEE
VCC
40
V
Input Voltage, with Respect to VEE
VIN
40
V
Output Difference Voltage (Source – Sink)
V(source-sink)
±7
V
Peak Pulsed Output Current (Source – Sink)
IOM
±10
A
Peak Pulsed Input Current
IIN
±100
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Notes 5 & 6)
Linear Derating Factor
PD
1.1
8.8
W
mW/°C
Thermal Resistance, Junction to Ambient (Notes 5 & 6)
RθJA
113
°C /W
Thermal Resistance, Junction to Lead (Note 7)
RθJL
105
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 8)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
1,500
V
1C
Electrostatic Discharge – Charged Device Model
ESD CDM
1,000
V
IV
Notes: 5. For a device mounted on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst
operating in a steady-state. The heatsink is split in half with the pin 1 (VCC) and pin 3 (VEE) connected separately to each half.
6. For device with two active die running at equal power.
7. Thermal resistance from junction to solder-point at the end of each lead on pin 1 (VCC) and pin 3 (VEE).
8. Refer to JEDEC specification JESD22-A114 and JESD22-C101.
ZXGD3006E6
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Output Voltage, High
VOUT(hi)
VCC - 1.0
VCC - 0.8
—
V
VIN = VCC
CL = 1nF
Output Voltage, Low
VOUT(low)
—
VEE + 0.12
VEE + 0.3
VIN = VEE
Supply Breakdown Voltage
BVCC
40
—
—
V
IQ = 100A, VIN = VCC
40
—
—
IQ = 100A, VIN = VEE = 0V
Quiescent Supply Current
IQ
—
—
50
nA
VCC = 30V, VIN = VCC
—
—
50
VCC = 30V, VIN = VEE = 0V
Peak Pulsed Source Current
I(source)M
—
4.0
—
A
VCC = 5V, IIN = 1mA, VOUT = 0V
Peak Pulsed Sink Current
I(sink)M
—
3.8
—
VCC = 5V, IIN = -1mA, VOUT = 5V
Source Current
with Varying Input Resistances
ISOURCE
—
6.4
5.5
3.9
2.2
0.44
—
A
RIN = 200Ω
RIN = 1kΩ
RIN = 10kΩ
RIN = 100kΩ
RIN = 1000kΩ
VCC = 15V, VEE = 0V
VIN = 15V
CL = 100nF, RL = 0.18Ω
Sink Current
with Varying Input Resistances
ISINK
—
7.7
6.5
4.4
2.3
0.46
—
A
RIN = 200Ω
RIN = 1kΩ
RIN = 10kΩ
RIN = 100kΩ
RIN = 1000kΩ
VCC = 15V, VEE = 0V
VIN = 15V
CL = 100nF, RL = 0.18Ω
Switching Times
with Low Load Capacitance CL = 10nF
td(rise)
tr
td(fall)
tf
—
8
48
16
35
—
ns
VCC = 15V, VEE = 0V
VIN = 0 to 15V
RIN = 1kΩ
CL = 10nF, RL = 0.18Ω
Switching Times
with High Load Capacitance CL = 100nF
td(rise)
tr
td(fall)
tf
—
46
419
47
467
—
ns
VCC = 15V, VEE = 0V
VIN = 0 to 15V
RIN = 1kΩ
CL = 100nF, RL = 0.18Ω
Switching Times
with Asymmetric Source and Sink
Resistors
td(rise)
tr
td(fall)
tf
—
27
208
11
53
—
ns
VCC = 20V, VEE = -18V
VIN = -18V to 20V
RIN= 1kΩ
CL = 10nF, RL = 0.18Ω
RSOURCE = 4.7Ω, RSINK = 0Ω (See page 7).
Switching Test Circuit and Timing Diagram
ZXGD3006E6
VCC
VEE
ZXGD3006E6
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ZXGD3006E6
Typical Switching Characteristics (@TA = +25°C, unless otherwise specified.)
0.0 0.2 0.4 0.6 0.8 1.0
-20
-10
0
10
20
10 100 1k 10k 100k 1M
1E-4
1E-3
0.01
0.1
1
10
0100 200 300 400 500 600 700 800
0
5
10
15
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0
5
10
15
Switching Speed
Asymmetric Source and Sink Resistance
VIN
VOUT
TA = 25 OC
VCC=V+IN=20 V
VEE=V-IN=-18 V
RIN = 1 k
CL = 10 nF
RL = 0.18
RSOURCE=4.7
RSINK = 0
Voltage (V)
Time (s)
CL=1F
CL=100nF
TA = 25OC
VCC= 15V
VIN = 15V
Square Wave
CL=10nF
Supply Current
Supply Current (A)
(Frequency (Hz))
CL=1nF
TA = 25OC
VCC= 15V
VIN = 15V
RIN = 1k
CL = 10nF
RL = 0.18
VOUT
Switching Speed
Voltage (V)
Time (ns)
VIN
TA = 25OC
VCC= 15V
VIN = 15V
RIN = 1k
CL = 100nF
RL = 0.18
VOUT VIN
Switching Speed
Time (s)
Voltage (V)
ZXGD3006E6
Document Number DS35229 Rev. 6 - 2
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ZXGD3006E6
Typical Switching Characteristics (@TA = +25°C, unless otherwise specified.)
110 100 1k
1
10
100
1000
110 100 1k
1
10
100
1000
1k 10k 100k 1M 10M
0.01
0.1
1
10
1k 10k 100k 1M 10M
0.01
0.1
1
10
110 100 1k
10
100
1000
10000
110 100 1k
10
100
1000
10000
VIN = 15V
VCC= 15V
VEE= 0V
RL = 0.18
VIN = 15V
VCC= 15V
VEE= 0V
RL = 0.18
RIN=200RIN=1kRIN=10k
RIN=100k
RIN=1M
Turn-On Delay Time
td(rise) (ns)
CL Load Capacitance (nF)
VIN = 15V
VCC= 15V
VEE= 0V
RL = 0.18
RIN=200RIN=1kRIN=10k
RIN=100k
Turn-Off Delay Time
td(fall) (ns)
CL Load Capacitance (nF)
RIN=1M
VIN = 15V
VCC= 15V
VEE= 0V
RL = 0.18
CL=10nF
CL=100nF
CL=1nF
CL=1F
Source Current vs. Input Resistance
Peak Source Current (A)
RIN Input Resistance ()
VIN = 15V
VCC= 15V
VEE= 0V
RL = 0.18CL=1nF
CL=10nF
CL=100nF
CL=1F
Sink Current vs. Input Resistance
Peak Sink Current (A)
RIN Input Resistance ()
VIN = 15V
VCC= 15V
VEE= 0V
RL = 0.18
RIN=200
RIN=1k
RIN=10k
RIN=1M
RIN=100k
Turn-On Rise Time
tr (ns)
CL Load Capacitance (nF)
VIN = 15V
VCC= 15V
VEE= 0V
RL = 0.18
RIN=1k
RIN=200
RIN=10k
RIN=100k
RIN=1M
Turn-Off Fall Time
CL Load Capacitance (nF)
tf (ns)
ZXGD3006E6
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Circuit Examples
ZXGD3006E6 Driving a MOSFET
Application example of the ZXGD3006E6 driving the gate of a
MOSFET from 0 to +15V.
Switching Time Characteristic
ZXGD3006E6 Driving an IGBT
Application example of ZXGD3006E6 driving the gate of an IGBT with
independent tON and tOFF using asymmetric RSOURCE and RSINK. In
addition, the gate is driven negative to -18V to prevent dV/dt induced
false triggering.
Switching Time Characteristic
ZXGD3006E6
IN
SOURCE
SINK
GND
PWM
Controller DRV
GND
+10V
VCC
Load
RIN
VS
ZXGD3006E6
IN
SOURCE
SINK
VEE
Isolated
Driver IC
with
Protection
OUT
DESAT
GND
IN+
+20V
VCC
-18V
Load
RSOURCE
RIN
ZXGD3006E6
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ZXGD3006E6
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT26
SOT26
Dim
Min
Max
Typ
A1
0.013
0.10
0.05
A2
1.00
1.30
1.10
A3
0.70
0.80
0.75
b
0.35
0.50
0.38
c
0.10
0.20
0.15
D
2.90
3.10
3.00
e
-
-
0.95
e1
-
-
1.90
E
2.70
3.00
2.80
E1
1.50
1.70
1.60
L
0.35
0.55
0.40
a
-
-
8°
a1
-
-
7°
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT26
Dimensions
Value (in mm)
C
2.40
C1
0.95
G
1.60
X
0.55
Y
0.80
Y1
3.20
a1
D
e
E1 E
b
A2 A1
Seating Plane
L
c
a
e1
A3
C1
Y1 G
X
Y
C
ZXGD3006E6
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ZXGD3006E6
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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website, harmless against all damages.
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
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labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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