20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXM61N02F
SUMMARY
V(BR)DSS=20V; RDS(ON)=0.18V; ID=1.7A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•Low on-resistance
•Fast switching speed
•Low threshold
•Low gate drive
•SOT23 package
APPLICATIONS
•DC - DC Converters
•Power Management Functions
•Disconnect switches
•Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
(inches) TAPE WIDTH (mm) QUANTITY
PER REEL
ZXM61N02FTA 7 8mm embossed 3000 units
ZXM61N02FTC 13 8mm embossed 10000 units
DEVICE MARKING
•N02
Top View
SOT23
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PROVISIONAL ISSUE A - MAY 1999
ZXM61N02F
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS 20 V
Gate Source Voltage VGS ± 12 V
Continuous Drain Current (VGS=4.5V; TA=25°C)(b)
(V
GS=4.5V; TA=70°C)(b) ID1.7
1.3 A
Pulsed Drain Current (c) IDM 7.4 A
Continuous Source Current (Body Diode) (b) IS0.8 A
Pulsed Source Current (Body Diode) ISM 7.4 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor PD625
5mW
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor PD806
6.4 mW
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) RθJA 200 °C/W
Junction to Ambient (b) RθJA 155 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t<5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
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PROVISIONAL ISSUE A - MAY 1999
ZXM61N02F
0.1 100
0.0001 0.1 10
080160
VDS - Drain-Source Voltage (V)
Safe Operating Area
10m
100m
10
I
D
- Drain Current (A)
D=0.2
D=0.1
Thermal Resistance (°C/W)
180
80 D=0.5
0
Pulse Width (s)
Transient Thermal Impedance
Max Power Dissipation (Watts)
1.0
0.6
0
T - Temperature (°C)
Derating Curve
Refer Note (a)
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Transient Thermal Impedance
0.0001
0
Pulse Width (s)10 1000
120
240
Single Pulse
D=0.5
D=0.05
D=0.2
D=0.1
1
101
0.8
0.4
0.2
20 40 60 100 120 140
Refer Note (b)
Refer Note (b) Refer Note (a)
20
40
60
100
120
140
160
0.001 0.01 1
200
160
40
80
0.001 0.01 0.1 1 100
CHARACTERISTICS
DC
1s
100ms
10ms
1ms
100us
Refer Note (a)
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PROVISIONAL ISSUE A - MAY 1999
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP.(3) MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V(BR)DSS 20 V ID=250µA, VGS=0V
Zero Gate Voltage Drain Current IDSS 1µAVDS=20V, VGS=0V
Gate-Body Leakage IGSS 100 nA VGS
=± 12V, VDS
=0V
Gate-Source Threshold Voltage VGS(th) 0.7 V ID=250µA, VDS
= VGS
Static Drain-Source On-State Resistance
(1) RDS(on) 0.18
0.24 Ω
ΩVGS
=4.5V, ID=0.93A
VGS
=2.7V, ID=0.47A
Forward Transconductance (3) gfs 1.3 S VDS=10V,ID=0.47A
DYNAMIC (3)
Input Capacitance Ciss 160 pF VDS=15 V, VGS=0V,
f=1MHz
Output Capacitance Coss 50 pF
Reverse Transfer Capacitance Crss 30 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 2.4 ns
VDD
=10V, ID=0.93A
RG=6.2Ω, RD=11Ω
(refer to test
circuit)
Rise Time tr4.2 ns
Turn-Off Delay Time td(off) 7.8 ns
Fall Time tf4.2 ns
Total Gate Charge Qg3.4 nC VDS=16V,VGS=4.5V,
ID=0.93A
(refer to test
circuit)
Gate-Source Charge Qgs 0.41 nC
Gate-Drain Charge Qgd 0.8 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD 0.95 V TJ=25°C, IS=0.93A,
VGS
=0V
Reverse Recovery Time (3) trr 12.9 ns TJ=25°C, IF=0.93A,
di/dt= 100A/µs
Reverse Recovery Charge (3) Qrr 5.2 nC
NOTES
(1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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ZXM61N02F
PROVISIONAL ISSUE A - MAY 1999
ZXM61N02F
61
0.1 1 10
1.5 2.5 4.5
VDS - Drain-Source Voltage (V)
Output Characteristics
10
100
I
D
- Drain Current (A)
1
0.01
3V
6V
4V
2.5V
2V
1.5V
+25°C
0.1 1 10
VDS - Drain-Source Voltage (V)
Output Characteristics
1
100
10m
I
D
- Drain Current (A)
+150°C
3.5V
3V
2.5V
2V
1.5V
4V
6V
VGS=2.7V
VGS=4.5V
10010
On-Resistance v Drain Current
ID- Drain Current (A)
0.1
0.1
1
10
ID=250µA
VGS(th)
RDS(on)
Normalised RDS(on) and VGS(th)
v Temperature
TJ- Junction Temperature (°C)
0.4
VGS=4.5V
1.0
1.6
Normalised R
DS(on)
and V
GS(th)
VGS=VDS
ID=0.93A
2000-100
I
D
- Drain Current (A)
VGS - Gate-Source Voltage (V)
Transfer Characteristics
0.1
10
3.5 100
0.6
0.8
1.2
1.4
1
R
DS(on)
- Drain Source On Resistance (Ω)
Source-Drain Diode Forward Voltage
VSD - Source-Drain Voltage (V)
0.2 0.4 1.0 1.4
100
100m
100µ
I
SD
- Reverse Drain Current (A)
1m
10m
1
10
0.6 0.8 1.2
VGS VGS
T=150°C
T=25°C
10m
100m
1
100m
10
VDS=10V
T=150°C
T=25°C
TYPICAL CHARACTERISTICS
PROVISIONAL ISSUE A - MAY 1999
0.1 10 100
Coss
Crss
C - Capacitance (pF)
400
200
Ciss
0
VDS - Drain-Source Voltage (V)
Capacitance v Drain-Source Voltage
100
300
103
V
GS
- Gate Source Voltage (V)
5
2
ID=0.93A
0
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
VDS=16V
12
1
3
4
Basic Gate Charge Waveform Gate Charge Test Circuit
Switching Time Waveforms Switching Time Test Circuit
VGS=0V
f=1MHz
TYPICAL CHARACTERISTICS
ZXM61N02F
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PROVISIONAL ISSUE A - MAY 1999
N
PACKAGE DIMENSIONS PAD LAYOUT DETAILS
DIM Millimetres Inches
Min Max Min Max
A 2.67 3.05 0.105 0.120
B 1.20 1.40 0.047 0.055
C– 1.10 – 0.043
D 0.37 0.53 0.0145 0.021
F 0.085 0.15 0.0033 0.0059
G NOM 1.9 NOM 0.075
K 0.01 0.10 0.0004 0.004
L 2.10 2.50 0.0825 0.0985
N NOM 0.95 NOM 0.037
ZXM61N02F
64
Zetex plc.
Fields New Road, Chadde rt on, Oldha m, OL9 -8NP, Unit ed Kingdom .
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
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right to alter without notice the specification, design, price or conditions of supply of any product or service.
PROVISIONAL ISSUE A - MAY 1999
