SILICON TRANSISTOR 2SB962-2 PNP SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2SB962-Z is designed for Audio frequency amplifier and switching, especially in Hybrid Integrated Circuits. FEATURE @ Low Veceisaty Vceisat) = -0.3 V TYP. QUALITY GRADE Standard Please refer to Quality grade on NEC Semiconductor Devices (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Collector to Base Voltage Vcso 40 Vv Collector to Emitter Voltage VcEo -30 V Emitter to Base Voltage VEBO . 5 Vv Collector Current (DC) Ic -3 A Collector Current (Pulse)* Ic -6 A Total Power Dissipation (Ta = 25 C)** = Pr 2.0 Ww Junction Temperature Tj 150 C Storage Temperature Tstg -55 to +150 C * PW S 10 ms, Duty Cycle $ 50 % ** When mounted on ceramic substrate of 7.5 cm? x 0.7mm PACKAGE DIMENSIONS (in millimeters) 6.54202 2.3 + 0.2 0.5 + 0.1 P 0.5 1.Base . 2. Collector 3. Emitter 4. Collector Document No. TC-1626B (0.0. No. TC-5641) Date Published December 1993. M Printed in Japan NEC Corporation 1985_NEC - 2SB962-Z ELECTRICAL CHARACTERISTICS (Ta = 25 C) CHARACTERISTIC SYMBOL | MIN. | Typ. | MAX. | UNIT TEST CONDITIONS ~ Collector Cutoff Current cso -10 pA | Vee =~30V, le =0 Emitter Cutoff Current leso -1.0 LA Ves = -3.0 V, Ic = 0 DC Current Gain hre1* 30 150 Vce = -2.0 V, Ic = -20 mA DC Current Gain hre2* 60 160 400 Vce = -2.0V, Ic=-1.0A Collector Saturation Voltage Veeisat* -0.3 ~0.5 Vv Ic=-2.0A,le=-0.2A Base Saturation Voltage Veetsati* ~1.0 -2.0 Vv Ic = -2.0 A, ls = -0.2A Gain Bandwidth Product fr 80 MHz | Vce =-5.0 V, le = 100 mA Output Capacitance Con 55 pF Vee = ~10 V, le = 0, f= 1.0 MHz * Pulsed: PW $ 350 ys, Duty Cycle 2 % hre Classification MARKING R Q P E hre2 60 to 120 100 to 200 160 to 320 200 to 400 TYPICAL CHARACTERISTICS (Ta = 25 C) TOTAL POWER DISSIPATION vs. 12 -10 = 1 10 3 mens c << b; 2 i Sina. 8 38 b = Peon m 5, s 2 3 e 6 Sie 2 &% 3 5, ; 5 0.3 Rs Xi 2 " = 4 wit & 0.1 3 Tt] Cer, ! 1 e amMic Yo | 2 of7.5 ome Sostrate 2 & X07 mm 0.03 Tos 25C ~0.01 (2: Single Pulse (Non Repeat) 0 50 100 150 -1 -3 ~6 -10 -30 -60-100 Ta - Ambient Temperature C Vce - Collector to Emitter Voltage - V OER S U EWE OF SAFE TRANSIENT THERMAL RESISTANCE 100 2 = ~ = lk=10 A = 100 30 = e = to Ambient 3 sof PN G 2 40 Z ee, 2 unction to Case 4 S 5 60 N65 | SY E 3 o % oO 2 >, PS fe 40 &% = aad 1 S Ou e 2 S&S & Oo o i E . KK t 0.1 0 50 100 150 o 0.1 03 1 3 10 30 100 300 1000 Tc - Case Temperature C PW Pulse Width msNEC 2SB962-2 COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE BASE TO EMITTER VOLTAGE 1 000 fea 20 Pulsed < 1 & vay o 5 S 109 o Cc 5 oO e -6 mA 5 8 mA | 3 2 am a 3 -3 mA I 10 b mA ~ la=-1mA 1 0 -4 -8 -12 -16 -20 -0,001 -0.01 -0.1 -1 -10 Vce - Collector to Emitter Voltage - V Ic - Collector Current - A BASE AND COLLECTOR SATURATION GAIN BANDWIDTH PRODUCT vs. VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT 1 000 Ic= 10+ Is Pulsed Vce=-5V > I D> N P, = Zo $2 cs 8 100 c5 & 3.= Be 0.1 s Bs : Ba S 10 oo o Som 0.01 a Om pe 3 aS 1 >> ~-0.001 | 0.001 -0.01 -0.1 -1 -10 -0.01 0.1 -1 lc - Collector Current -A . tc - Collector Current -A OUTPUT CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 1 000 le=0 = 1.0 MHz 100 10 Cop Output Capacitance pF -1 -10 -100 Vce Collector to Base Voltage VNEC 2SB962-Z Reference Application note name No. Quality control of NEC semiconductors devices. TEI-1202 Quality control guide of semiconductors devices. ME!-1202 Assembly manual of semiconductors devices. 1E1-1207 Design of Push-Pull Type. Switching Regulators (Basic). TEB-1002 Design of Push-Puil Type Switching Regulators (Applications). TEB-1003 Optimum Base Drive Conditions of Switching Power Transistors. TEB-1014 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from. use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6