BAS16H Switching Diode Features * S Prefix for Automotive and Other Applications Requiring Unique * Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 CATHODE MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 100 V Peak Forward Current IF 200 mA IFSM(surge) 1.8 A Repetitive Peak Forward Current (Note 2) IFRM 1.0 A Non-Repetitive Peak Forward Current (Square Wave, TJ = 25C prior to surge) t = 1 ms t = 10 ms t = 100 ms t = 1 ms t = 10 ms t = 100 ms t=1s IFSM Non-Repetitive Peak Forward Surge Current, 60 Hz www.onsemi.com 2 1 SOD-323 CASE 477 STYLE 1 A MARKING DIAGRAM 36.0 18.0 6.0 3.0 1.8 1.3 1.0 A6 M A6 M Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature February, 2019 - Rev. 13 = Specific Device Code = Date Code ORDERING INFORMATION Symbol Max Unit PD 200 mW 1.57 mW/C RqJA 635 C/W TJ, Tstg -55 to 150 C 1. FR-4 Minimum Pad. 2. Square Wave, f = 40 kHz, PW = 200 ns Test Duration = 60 s, TJ = 25C prior to surge. (c) Semiconductor Components Industries, LLC, 2016 2 ANODE Device Package Shipping BAS16HT1G SOD-323 (Pb-Free) 3000 / Tape & Reel SBAS16HT1G SOD-323 (Pb-Free) 3000 /T ape & Reel BAS16HT3G SOD-323 (Pb-Free) 10000 / Tape & Reel SBAS16HT3G SOD-323 (Pb-Free) 10000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 Publication Order Number: BAS16HT1/D BAS16H ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Max - - - 1.0 50 30 100 - - - - - 715 855 1000 1250 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 100 Vdc) (VR = 75 Vdc, TJ = 150C) (VR = 25 Vdc, TJ = 150C) IR Reverse Breakdown Voltage (IBR = 100 mAdc) V(BR) mAdc Vdc Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD - 2.0 pF Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) VFR - 1.75 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, RL = 50 W) trr - 6.0 ns Stored Charge (IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 W) QS - 45 pC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 W +10 V 2.0 k 100 mH tr 0.1 mF IF tp t IF trr 10% t 0.1 mF 90% D.U.T. 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE iR(REC) = 1.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 BAS16H TYPICAL CHARACTERISTICS 10 100 IR , REVERSE CURRENT (A) IF, FORWARD CURRENT (mA) TA = 150C TA = 85C 10 TA = -40C 1.0 TA = 25C TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 TA = 25C 0.001 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (V) 0 1.2 10 Figure 2. Forward Voltage Figure 3. Leakage Current 40 0.68 Based on square wave currents TJ = 25C prior to surge 35 30 0.64 IFSM (A) CD, DIODE CAPACITANCE (pF) 50 20 30 40 VR, REVERSE VOLTAGE (V) 0.60 25 20 15 10 0.56 5 0.52 0 2 4 6 0 0.0001 8 0.001 0.01 0.1 1 10 100 VR, REVERSE VOLTAGE (V) tp (mSec) Figure 4. Capacitance Figure 5. Maximum Non-repetitive Peak Forward Current as a Function of Pulse Duration, Typical Values www.onsemi.com 3 1000 BAS16H PACKAGE DIMENSIONS SOD-323 CASE 477-02 ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L NOTE 5 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE A1 SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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