IGB50N65S5 Highspeedswitchingseriesfifthgeneration TRENCHSTOPTM5highspeedsoftswitchingIGBT FeaturesandBenefits: C HighspeedS5technologyoffering *Highspeedsmoothswitchingdeviceforhard&softswitching *VeryLowVCEsat,1.35Vatnominalcurrent *PlugandplayreplacementofpreviousgenerationIGBTs *650Vbreakdownvoltage *LowQG *Maximumjunctiontemperature175C *Pb-freeleadplating;RoHScompliant *CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E C PotentialApplications: *EnergyGeneration -SolarStringInverter -SolarMicroInverter *IndustrialPowerSupplies -IndustrialSMPS -IndustrialUPS *MetalTreatment -Welding *EnergyDistribution -EnergyStorage *Infrastructure-Charge -Charger G E ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttests ofJEDEC47/20/22 KeyPerformanceandPackageParameters Type IGB50N65S5 Datasheet www.infineon.com VCE IC VCEsat,Tvj=25C Tvjmax Marking Package 650V 50A 1.35V 175C G50ES5 PG-TO263-3 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.2 2018-01-11 IGB50N65S5 Highspeedswitchingseriesfifthgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Datasheet 2 V2.2 2018-01-11 IGB50N65S5 Highspeedswitchingseriesfifthgeneration MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj25C VCE 650 V DCcollectorcurrent,limitedbyTvjmax Tc=25Cvaluelimitedbybondwire Tc=100C IC 80.0 63.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 200.0 A Turn off safe operating area VCE650V,Tvj175C,tp=1s - 200.0 A Gate-emitter voltage TransientGate-emittervoltage(tp10s,D<0.010) VGE 20 30 V PowerdissipationTc=25C PowerdissipationTc=100C Ptot 270.0 135.0 W Operating junction temperature Tvj -40...+175 C Storage temperature Tstg -55...+150 C Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STA-020) C 260 ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance, junction - case Rth(j-c) - - 0.55 K/W Thermal resistance, min. footprint junction - ambient Rth(j-a) - - 65 K/W Thermal resistance, 6cm Cu on PCB junction - ambient Rth(j-a) - - 40 K/W ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 650 - - Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=50.0A Tvj=25C Tvj=125C Tvj=175C - 1.35 1.50 1.60 1.70 - Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 3.2 4.0 4.8 V Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25C Tvj=175C - 2000 50 - A Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=50.0A - 62.0 - S StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Datasheet 3 V V V2.2 2018-01-11 IGB50N65S5 Highspeedswitchingseriesfifthgeneration ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 3000 - - 50 - - 11 - - 120.0 - nC - 7.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=520V,IC=50.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 20 - ns - 30 - ns - 139 - ns - 60 - ns - 1.23 - mJ IGBTCharacteristic,atTvj=25C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.74 - mJ Total switching energy Ets - 1.97 - mJ Turn-on delay time td(on) - 18 - ns Rise time tr - 15 - ns Turn-off delay time td(off) - 150 - ns Fall time tf - 68 - ns Turn-on energy Eon - 0.48 - mJ Turn-off energy Eoff - 0.23 - mJ Total switching energy Ets - 0.71 - mJ Datasheet Tvj=25C, VCC=400V,IC=50.0A, VGE=0.0/15.0V, RG(on)=8.2,RG(off)=8.2 L,CfromFig.E Energy losses include "tail" and diode reverse recovery. Tvj=25C, VCC=400V,IC=25.0A, VGE=0.0/15.0V, RG(on)=8.2,RG(off)=8.2 L,CfromFig.E Energy losses include "tail" and diode reverse recovery. 4 V2.2 2018-01-11 IGB50N65S5 Highspeedswitchingseriesfifthgeneration SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 21 - ns - 30 - ns - 160 - ns - 55 - ns - 1.55 - mJ IGBTCharacteristic,atTvj=150C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.96 - mJ Total switching energy Ets - 2.51 - mJ Turn-on delay time td(on) - 19 - ns Rise time tr - 15 - ns Turn-off delay time td(off) - 188 - ns Fall time tf - 26 - ns Turn-on energy Eon - 0.63 - mJ Turn-off energy Eoff - 0.42 - mJ Total switching energy Ets - 1.05 - mJ Datasheet Tvj=150C, VCC=400V,IC=50.0A, VGE=0.0/15.0V, RG(on)=8.2,RG(off)=8.2 L,CfromFig.E Energy losses include "tail" and diode reverse recovery. Tvj=150C, VCC=400V,IC=25.0A, VGE=0.0/15.0V, RG(on)=8.2,RG(off)=8.2 L,CfromFig.E Energy losses include "tail" and diode reverse recovery. 5 V2.2 2018-01-11 IGB50N65S5 270 90 240 80 210 70 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] Highspeedswitchingseriesfifthgeneration 180 150 120 90 60 50 40 30 60 20 30 10 0 25 50 75 100 125 150 0 175 25 TC,CASETEMPERATURE[C] 100 125 150 175 Figure 2. Collectorcurrentasafunctionofcase temperature (VGE15V,Tvj175C) 200 200 VGE = 20V 180 VGE = 20V 180 18V 15V 160 12V 140 10V 8V 120 7V 100 6V 5V 80 60 140 7V 4 Datasheet 5V 60 0 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Typicaloutputcharacteristic (Tvj=25C) 6V 80 20 3 8V 100 20 2 10V 120 40 1 15V 12V 40 0 18V 160 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 75 TC,CASETEMPERATURE[C] Figure 1. Powerdissipationasafunctionofcase temperature (Tvj175C) 0 50 0 1 2 3 4 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 4. Typicaloutputcharacteristic (Tvj=175C) 6 V2.2 2018-01-11 IGB50N65S5 Highspeedswitchingseriesfifthgeneration 200 3.5 Tvj = 25C Tvj = 150C VCEsat,COLLECTOR-EMITTERSATURATION[V] 180 IC,COLLECTORCURRENT[A] 160 140 120 100 80 60 40 20 0 2 3 4 5 6 7 8 9 IC = 25A IC = 50A IC = 100A 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10 25 VGE,GATE-EMITTERVOLTAGE[V] Figure 5. Typicaltransfercharacteristic (VCE=20V) 100 125 150 175 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] td(off) tf td(on) tr t,SWITCHINGTIMES[ns] 75 Figure 6. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 1000 100 10 1 50 Tvj,JUNCTIONTEMPERATURE[C] 0 30 60 90 120 100 10 1 150 IC,COLLECTORCURRENT[A] Figure 7. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tvj=150C,VCE=400V, VGE=0/15V,rG=8.2,Dynamictestcircuitin Figure E) Datasheet 0 5 10 15 20 25 rG,GATERESISTOR[] Figure 8. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=150C,VCE=400V, VGE=0/15V,IC=50A,Dynamictestcircuitin Figure E) 7 V2.2 2018-01-11 IGB50N65S5 Highspeedswitchingseriesfifthgeneration 1000 6 typ. VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 1 25 50 75 100 125 150 5 4 3 2 1 0 175 25 Tvj,JUNCTIONTEMPERATURE[C] Figure 9. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=50A,rG=8.2,Dynamictestcircuitin Figure E) 75 100 125 150 Figure 10. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.5mA) 15 3.5 Eoff Eon Ets Eoff Eon Ets 3.0 12 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 50 Tvj,JUNCTIONTEMPERATURE[C] 9 6 3 2.5 2.0 1.5 1.0 0.5 0 0 30 60 90 120 0.0 150 IC,COLLECTORCURRENT[A] Figure 11. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=150C,VCE=400V, VGE=0/15V,rG=8.2,Dynamictestcircuitin Figure E) Datasheet 0 5 10 15 20 25 rG,GATERESISTOR[] Figure 12. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=150C,VCE=400V, VGE=0/15V,IC=50A,Dynamictestcircuitin Figure E) 8 V2.2 2018-01-11 IGB50N65S5 Highspeedswitchingseriesfifthgeneration 3.0 3.5 Eoff Eon Ets 3.0 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 2.5 2.0 1.5 1.0 2.5 2.0 1.5 1.0 0.5 0.0 Eoff Eon Ets 0.5 25 50 75 100 125 150 0.0 200 175 Tvj,JUNCTIONTEMPERATURE[C] 250 300 350 400 450 500 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 13. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=50A,rG=8.2,Dynamictestcircuitin Figure E) Figure 14. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=150C,VGE=0/15V, IC=50A,rG=8.2,Dynamictestcircuitin Figure E) 16 VCC=130V VCC=520V Cies Coes Cres 1E+4 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 14 10 8 6 1000 100 4 10 2 0 0 20 40 60 80 100 120 1 140 QGE,GATECHARGE[nC] Figure 15. Typicalgatecharge (IC=50A) Datasheet 0 5 10 15 20 25 30 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 16. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 9 V2.2 2018-01-11 IGB50N65S5 Highspeedswitchingseriesfifthgeneration Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 5 6 ri[K/W]: 5.3E-3 0.158702 0.238385 0.134762 0.011583 1.8E-3 i[s]: 1.4E-5 3.4E-4 2.8E-3 0.013683 0.216456 3.533918 0.001 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 17. IGBTtransientthermalimpedance (D=tp/T) Datasheet 10 V2.2 2018-01-11 IGB50N65S5 Highspeedswitchingseriesfifthgeneration Package Drawing PG-TO263-3 MAX 4.57 0.25 0.85 1.15 0.65 1.40 9.45 7.90 10.31 8.60 MIN 4.30 0.00 0.65 0.95 0.33 1.17 8.51 7.10 9.80 6.50 2.54 5.08 2 14.61 2.29 0.70 1.00 16.05 9.30 4.50 10.70 3.65 1.25 Datasheet MAX 0.180 0.010 0.033 0.045 0.026 0.055 0.372 0.311 0.406 0.339 MIN 0.169 0.000 0.026 0.037 0.013 0.046 0.335 0.280 0.386 0.256 Z8B00003324 0 0 5 5 0.100 0.200 2 15.88 3.00 1.60 1.78 16.25 9.50 4.70 10.90 3.85 1.45 0.575 0.090 0.028 0.039 0.632 0.366 0.177 0.421 0.144 0.049 11 7.5mm 0.625 0.118 0.063 0.070 0.640 0.374 0.185 0.429 0.152 0.057 30-08-2007 01 V2.2 2018-01-11 IGB50N65S5 Highspeedswitchingseriesfifthgeneration Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 12 V2.2 2018-01-11 IGB50N65S5 Highspeedswitchingseriesfifthgeneration RevisionHistory IGB50N65S5 Revision:2018-01-11,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2017-05-19 Final data sheet 2.2 2018-01-11 Remove of Pb-free symbol and editorial changes. Datasheet 13 V2.2 2018-01-11 Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)InfineonTechnologiesAG2018. AllRightsReserved. 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