Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.2
www.infineon.com 2018-01-11
IGB50N65S5
Highspeedswitchingseriesfifthgeneration
TRENCHSTOPTM5highspeedsoftswitchingIGBT
FeaturesandBenefits:
HighspeedS5technologyoffering
•Highspeedsmoothswitchingdeviceforhard&softswitching
•VeryLowVCEsat,1.35Vatnominalcurrent
•PlugandplayreplacementofpreviousgenerationIGBTs
•650Vbreakdownvoltage
•LowQG
•Maximumjunctiontemperature175°C
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
PotentialApplications:
•EnergyGeneration
-SolarStringInverter
-SolarMicroInverter
•IndustrialPowerSupplies
-IndustrialSMPS
-IndustrialUPS
•MetalTreatment
-Welding
•EnergyDistribution
-EnergyStorage
•Infrastructure–Charge
-Charger
ProductValidation:
Qualifiedforindustrialapplicationsaccordingtotherelevanttests
ofJEDEC47/20/22
G
C
E
G
E
C
KeyPerformanceandPackageParameters
Type VCE ICVCEsat,Tvj=25°C Tvjmax Marking Package
IGB50N65S5 650V 50A 1.35V 175°C G50ES5 PG-TO263-3
Datasheet 2 V2.2
2018-01-11
IGB50N65S5
Highspeedswitchingseriesfifthgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Datasheet 3 V2.2
2018-01-11
IGB50N65S5
Highspeedswitchingseriesfifthgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter Symbol Value Unit
Collector-emittervoltage,Tvj≥25°C VCE 650 V
DCcollectorcurrent,limitedbyTvjmax
Tc=25°Cvaluelimitedbybondwire
Tc=100°C
IC80.0
63.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 200.0 A
Turn off safe operating area
VCE≤650V,Tvj≤175°C,tp=1µs - 200.0 A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20
±30 V
PowerdissipationTc=25°C
PowerdissipationTc=100°C Ptot 270.0
135.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
reflow soldering (MSL1 according to JEDEC J-STA-020) 260 °C
ThermalResistance
Value
min. typ. max.
Parameter Symbol Conditions Unit
RthCharacteristics
IGBT thermal resistance,
junction - case Rth(j-c) - - 0.55 K/W
Thermal resistance, min. footprint
junction - ambient Rth(j-a) - - 65 K/W
Thermal resistance, 6cm² Cu on
PCB
junction - ambient
Rth(j-a) - - 40 K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 - - V
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=50.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
-
-
1.35
1.50
1.60
1.70
-
-
V
Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 3.2 4.0 4.8 V
Zero gate voltage collector current ICES
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
-
2000
50
-
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=50.0A - 62.0 - S
Datasheet 4 V2.2
2018-01-11
IGB50N65S5
Highspeedswitchingseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance Cies - 3000 -
Output capacitance Coes - 50 -
Reverse transfer capacitance Cres - 11 -
VCE=25V,VGE=0V,f=1MHz pF
Gate charge QGVCC=520V,IC=50.0A,
VGE=15V - 120.0 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE- 7.0 - nH
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) - 20 - ns
Rise time tr- 30 - ns
Turn-off delay time td(off) - 139 - ns
Fall time tf- 60 - ns
Turn-on energy Eon - 1.23 - mJ
Turn-off energy Eoff - 0.74 - mJ
Total switching energy Ets - 1.97 - mJ
Tvj=25°C,
VCC=400V,IC=50.0A,
VGE=0.0/15.0V,
RG(on)=8.2Ω,RG(off)=8.2Ω
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Turn-on delay time td(on) - 18 - ns
Rise time tr- 15 - ns
Turn-off delay time td(off) - 150 - ns
Fall time tf- 68 - ns
Turn-on energy Eon - 0.48 - mJ
Turn-off energy Eoff - 0.23 - mJ
Total switching energy Ets - 0.71 - mJ
Tvj=25°C,
VCC=400V,IC=25.0A,
VGE=0.0/15.0V,
RG(on)=8.2Ω,RG(off)=8.2Ω
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Datasheet 5 V2.2
2018-01-11
IGB50N65S5
Highspeedswitchingseriesfifthgeneration
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=150°C
Turn-on delay time td(on) - 21 - ns
Rise time tr- 30 - ns
Turn-off delay time td(off) - 160 - ns
Fall time tf- 55 - ns
Turn-on energy Eon - 1.55 - mJ
Turn-off energy Eoff - 0.96 - mJ
Total switching energy Ets - 2.51 - mJ
Tvj=150°C,
VCC=400V,IC=50.0A,
VGE=0.0/15.0V,
RG(on)=8.2Ω,RG(off)=8.2Ω
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Turn-on delay time td(on) - 19 - ns
Rise time tr- 15 - ns
Turn-off delay time td(off) - 188 - ns
Fall time tf- 26 - ns
Turn-on energy Eon - 0.63 - mJ
Turn-off energy Eoff - 0.42 - mJ
Total switching energy Ets - 1.05 - mJ
Tvj=150°C,
VCC=400V,IC=25.0A,
VGE=0.0/15.0V,
RG(on)=8.2Ω,RG(off)=8.2Ω
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Datasheet 6 V2.2
2018-01-11
IGB50N65S5
Highspeedswitchingseriesfifthgeneration
Figure 1. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot,POWERDISSIPATION[W]
25 50 75 100 125 150 175
0
30
60
90
120
150
180
210
240
270
Figure 2. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
TC,CASETEMPERATURE[°C]
IC,COLLECTORCURRENT[A]
25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
80
90
Figure 3. Typicaloutputcharacteristic
(Tvj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
012345
0
20
40
60
80
100
120
140
160
180
200
VGE = 20V
18V
15V
12V
10V
8V
7V
6V
5V
Figure 4. Typicaloutputcharacteristic
(Tvj=175°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
012345
0
20
40
60
80
100
120
140
160
180
200
VGE = 20V
18V
15V
12V
10V
8V
7V
6V
5V
Datasheet 7 V2.2
2018-01-11
IGB50N65S5
Highspeedswitchingseriesfifthgeneration
Figure 5. Typicaltransfercharacteristic
(VCE=20V)
VGE,GATE-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
2345678910
0
20
40
60
80
100
120
140
160
180
200
Tvj = 25°C
Tvj = 150°C
Figure 6. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
Tvj,JUNCTIONTEMPERATURE[°C]
VCEsat,COLLECTOR-EMITTERSATURATION[V]
25 50 75 100 125 150 175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IC = 25A
IC = 50A
IC = 100A
Figure 7. Typicalswitchingtimesasafunctionof
collectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,rG=8.2Ω,Dynamictestcircuitin
Figure E)
IC,COLLECTORCURRENT[A]
t,SWITCHINGTIMES[ns]
0 30 60 90 120 150
1
10
100
1000
td(off)
tf
td(on)
tr
Figure 8. Typicalswitchingtimesasafunctionofgate
resistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=50A,Dynamictestcircuitin
Figure E)
rG,GATERESISTOR[Ω]
t,SWITCHINGTIMES[ns]
0 5 10 15 20 25
1
10
100
1000
td(off)
tf
td(on)
tr
Datasheet 8 V2.2
2018-01-11
IGB50N65S5
Highspeedswitchingseriesfifthgeneration
Figure 9. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=50A,rG=8.2Ω,Dynamictestcircuitin
Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
t,SWITCHINGTIMES[ns]
25 50 75 100 125 150 175
1
10
100
1000
td(off)
tf
td(on)
tr
Figure 10. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.5mA)
Tvj,JUNCTIONTEMPERATURE[°C]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
25 50 75 100 125 150
0
1
2
3
4
5
6
typ.
Figure 11. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,rG=8.2Ω,Dynamictestcircuitin
Figure E)
IC,COLLECTORCURRENT[A]
E,SWITCHINGENERGYLOSSES[mJ]
0 30 60 90 120 150
0
3
6
9
12
15
Eoff
Eon
Ets
Figure 12. Typicalswitchingenergylossesasa
functionofgateresistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=50A,Dynamictestcircuitin
Figure E)
rG,GATERESISTOR[Ω]
E,SWITCHINGENERGYLOSSES[mJ]
0 5 10 15 20 25
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Eoff
Eon
Ets
Datasheet 9 V2.2
2018-01-11
IGB50N65S5
Highspeedswitchingseriesfifthgeneration
Figure 13. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=50A,rG=8.2Ω,Dynamictestcircuitin
Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
E,SWITCHINGENERGYLOSSES[mJ]
25 50 75 100 125 150 175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Eoff
Eon
Ets
Figure 14. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=0/15V,
IC=50A,rG=8.2Ω,Dynamictestcircuitin
Figure E)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
200 250 300 350 400 450 500
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Eoff
Eon
Ets
Figure 15. Typicalgatecharge
(IC=50A)
QGE,GATECHARGE[nC]
VGE,GATE-EMITTERVOLTAGE[V]
0 20 40 60 80 100 120 140
0
2
4
6
8
10
12
14
16
VCC=130V
VCC=520V
Figure 16. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
C,CAPACITANCE[pF]
0 5 10 15 20 25 30
1
10
100
1000
1E+4 Cies
Coes
Cres
Datasheet 10 V2.2
2018-01-11
IGB50N65S5
Highspeedswitchingseriesfifthgeneration
Figure 17. IGBTtransientthermalimpedance
(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.001
0.01
0.1
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
5.3E-3
1.4E-5
2
0.158702
3.4E-4
3
0.238385
2.8E-3
4
0.134762
0.013683
5
0.011583
0.216456
6
1.8E-3
3.533918
Datasheet 11 V2.2
2018-01-11
IGB50N65S5
Highspeedswitchingseriesfifthgeneration
01
30-08-2007
Z8B00003324
0.039
0.000
0.026
0.335
0.013
0.037
MIN
0.169
0.046
0.280
0.090
0.386
8.60 0.3390.256
0.575
0.632
0.366
0.177
0.421
0.049
0.144
5.08
2.54
1.00
7.10
2.29
9.80
6.50
9.30
4.50
14.61
16.05
10.70
1.25
3.65
0.70
2
0.00
0.65
0.33
8.51
0.95
4.30
MIN
1.17
1.60
1.78
7.90
10.31
3.00
15.88
16.25
9.50
4.70
10.90
1.45
3.85
MAX
4.57
0.25
1.15
0.65
9.45
0.85
1.40
0.200
0.100
0.028
2
0.063
0.070
0.311
0.406
0.118
0.625
0.640
0.374
0.185
0.429
0.057
0.152
0.010
0.180
0.033
0.026
0.372
0.045
MAX
0.055
0
7.5mm
5
5
0
Package Drawing PG-TO263-3
Datasheet 12 V2.2
2018-01-11
IGB50N65S5
Highspeedswitchingseriesfifthgeneration
t
ab
td(off) tftr
td(on)
90% IC
10% IC
90% IC
10% VGE
10% IC
t
90% VGE
t
t
90% VGE
VGE(t)
t
t
t
t1t4
2% IC
10% VGE
2% VCE
t2t3
E
t
t
V I t
off = x x d
1
2
CE C
E
t
t
V I t
on = x x d
3
4
CE C
CC
dI /dt
F
dI
I,V
Figure A.
Figure B.
Figure C. Definition of diode switching
characteristics
Figure E. Dynamic test circuit
Figure D.
I (t)
C
Parasitic inductance L ,
parasitic capacitor C ,
relief capacitor C ,
(only for ZVT switching)
s
s
r
t t t
Q Q Q
rr a b
rr a b
= +
= +
QaQb
V (t)
CE
VGE(t)
I (t)
C
V (t)
CE
Testing Conditions
Datasheet 13 V2.2
2018-01-11
IGB50N65S5
Highspeedswitchingseriesfifthgeneration
RevisionHistory
IGB50N65S5
Revision:2018-01-11,Rev.2.2
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2017-05-19 Final data sheet
2.2 2018-01-11 Remove of Pb-free symbol and editorial changes.
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