G SOLID STATE ol DED 3875041 00142449 3 i 3875081 G E SOLID STATE Tt tae O1E 18249. DI~ 37-07 Standard Power MOSFETs IRFF110, IRFF111, IRFF112, IRFF113 File Number 1562 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 3.0A and 3.5A, GO0V-100V fps(on) = 0.6 Q and 0.8 Q Features: = SOA Is power-dissipation limited Nanosecond switching speeds w Linear transfer characteristics & High input impedance am Majority carrier device The IRFF110, IRFF111, |RFF112 and IRFF113 are n-channel enhancement-mode silicon-gate power field-effect N-CHANNEL ENHANCEMENT MODE s 9205-33741 TERMINAL DIAGRAM TERMINAL DESIGNATION transistors designed for applications such as switching GATE regulators, switching converters, motordrivers, relay drivers, and drivers for high-power bipolar switching transistors pRAIN requiring high speed and low gate-drive power. These types SOURCE (CASE) can be operated directly from integrated circults. The IRFF-types are supplied in the JEDEG TO-205AF (LOW-PROFILE TO-39) metal package. Absolute Maximum Ratings 9208-37555 JEDEC TO-205AF Parameter (REF110 IAFFAN1 IRFF 112 IRFF113 Units Vos Drain ~ Source Voltage @ 100 60 100 60 Vv VpGR Drain - Gate Voltage (Reg = 20 KO) 100 60 100 60 Vv Ip @ Tc = 26C Continuous Orain Current 3.5 3.5 3.0 3.0 A low Pulsed Drain Current @ 14 14 12 12 A Ves Gate - Source Voltage 20 Vv Pp @Tc = 25C Max. Power Dissipation 16 (See Fig. 14) Ww Linear Derating Factor 0.12 [See Fig. 14) wre LM Inductive Current, Clamped . {See Fig. 15 and 16}L = 100xH A 14 14 ! 12 | 12 T rs Tag Sera Tamperature Range 85 10 150 C Lead Temperature 300 (0.063 in. {1.6mm} from case for 10s) ec 192 0207 A~06G E SOLID STATE on DE ff 375081 goleeso a I " 3875081 GE SOLID STATE O1E 18250 Dd T+39-D7 oe Standard Power MOSFETs IRFF110, IRFF111, IRFF112, IRFF113 Electrical Characteristics @T = 25C (Unless Otherwise Specified) Parameter Type Min. | Typ. | Max. | Units Test Conditions BY, Drain - Source Breakdown Voltage IRFF110 OSS waeert2 | 100 7 fo v Ves = OV fREFAM1 warring | 89 f - | v Ip = 250uA V@siih) Gate Threshold Voltage ALL 2.0 ~ 4.0 v Vos = Ves. lp = 250zA loss _ Gate-Source Leakage Forward ALL - _ 100 nA Ves = 20V 'gsg _ Gate-Source Leakage Reverse ALL = = 4-100 nA VGs = -20V | 2 ii i _ - Vps = Mex. Rating, Ves = OV IDSs ero Gate Voltage Drain Current ALL 250 BA Ds x. Rai i a. Ves = 7 TOOO pA Vps = Mex. Rating x 0.8, Vgg = OV. Te = 125C ipian) On-State Drain Current @ REPO 3.8 _ _ A ne Vos? 'ofon) * Foston) max. Ves * 10V inFeiig | 3-0 | - A Rpstonj Static Drain-Source On-State IRFF TIO _ Resistance @ IRFF 144 O58 | 06 a TAFFIIe Ves = 10V, Ip = 1.54 (RFE N33 - 0.6 0.8 9 Ms Forward Transconductance @ ALL 10 =f 18 | $ tn} Vos >!piony * Roston) max.: Ip = 1-5A Ciss Input Capacitance ALL - 135 | 200 pF Vag = OV. Vpg = 28V,f = 1.0 MHz Coss Output Capacitance ALL - 80 100 oF See Fig. 10 Ciss Reverse Transfer Capacitance ALL - 20 25 pF dion} _ Turn-On Delay Time ALL = 10 20 fis Vop = 9-5 BVpgg. Ip = 1.5A,Z, = 500 t, Rise Time AtL - 15 26 as See Fig. 17 , tdtoff) _Turn-Off Detay Time ALL - 15 26 os (MOSFET switching times are essentially ty Fall Time ALL _ 10 20 ns independent of operating temperature.) Total Gate Charge _ Vg = 10V. Ip = 8.0A, Vpg = 0.8 Max. Rating. % {Gate-Source Pius Gate-Drain} ALL 5.0 16 nc sorFig. 18 for test circuit. {Gate charge Is essentially Q . Gate-Source Charge ALL _ 2.0 _ nc independent of operating temperature.) Qqq Gate-Drain ("Miler") Charge ALL - 3.0 - ac lp Internal Drain Inductance ALL - 5.0 - nH Measured from the Modified MOSFET drain lead. mm (0.2 symbol showing the in.} from header to internal device center of die. inductances. iD Ls Internat Source Inductance ALL = 15 - oH Measured from the source lead, Sram {0.2 in.) from header to & Ls source bonding pad. s Thermal Resistance Ainjc__Junction-to-Case [au [| - | - [e323] ecw] | Rihga _ Junction-to-Ambient Liaw [| - = [178 [caw [Free air Operauan | Source-Drain Diode Ratings and Characteristics ts Continuous Source Current (RFFI10 _ _ 35 A Modified MOSFET symbol {Body Diode} (RFFIV showing the integral IRFFI12 teverse P-N junction rectifier. o IRFFVIS | - 4 30 A | Pulse Source Current IRFENIO SM (Body Dicde) @ IRFFIW f - | 4 a G IRFF V2 s inFe3 | - 12 A Vsp _ Dioda Forward Voltage @ ieee { - | - | aed ov Te = 28C, Ig = 3.5A, Vag = OV rns | - | - | 20] v Tg = 25C, Ig = 3.04, Vag = OV ter Reverse Recovery Time ALL - 200] ns Ty = 180C, tp = 355A, dipfdt = 100A/ps Qra Reverse Recovered Charge ALL - 1.0 - xc Ty = 180C, Ip 3.5A, dip/dt = T00A/us ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on apesd is substantially contralied by Lg + Lp. @MTy = 25C to 180C. @)Pulse Test: Pulse width < 3004s, Duty Cycla < 2%. @ Repetitive Rating: Pulss width limited by max. junction temperature. See Transient Thermat Impedance Curva (Fig. 5). wanes 193 0208 A-07G E SOLID STATE Standard Power MOSFETs OL DEB 3475081 00134251 1 7-29-07 IRFF110, (RFF 111, IRFF112, IRFF113 194 WW ZrhscltAynsc. NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE {PER UNIT] he 1 a as 48 4g 32 Ip. DRAIN CURRENT (AMPERES) a Ys, ORAIN-TC SOUACE VOLTAGE (VOLTS} Fig, 1 Typical Output Characteristics Ip, ORAIN CURRENT AMPERES - oe 2. 18 a es 19 15 20 25 35 Vos > ton * max, 8 j = z & = 2 z < = a s 6 8 2 8 8 10 Vgg. GATE TO SOURCE VOLTAGE (VOLTS) Fig. 2 Typical Transfer Characteristics GPEAATION IN THIS AREA SS LIMITED 8Y Rostanp g c 2 = = : 5 a & = 5 3 z =} S a Te = 25C Ty + 180C MAX. Fuyg 7823 TAFF411, 02 4048 50 Vog. DRAIN TO SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics on 2 a & o 2 8 2 -2= & . au wm 2 5 m0 4 so 100 200 8500 Vos, DRAIN TO-SOUACE VOLTAGE (VOLTS) Fig. 4 Maximum Safe Operating Area Lathe} - ~- 2 1 DUTY FACTOR, D= + 2 PER UNIT ASE = Rinse =8 33 OEG CW 3 Tw -Te Pow Ziuclt. 2 5 wt 2 5 19 2 5 5 wt 2 wi 2 5 192 {), SQUARE WAVE PULSE OURATION (SECONDS) Fig. 5 Maxi Effective Ti Thermat (mped. $ to-Case Vs. Pulse DurationG E SOLID STATE 3875081 G E SOLID STATE O1 DE 3475081 0018252 3 i O1E 18252 DT-39-O7 Standard Power MOSFETs wo a * Apstan} uy ye ow -_ ae Ww Ws, TRANSCONDUCTANCE (SIEMENS} ess 8 2 = a @ O08 16 24 32 40 48 56 64 72 80 (ip, ORAIN CUARERT (AMPERES) Fig. 6 Typical Transconductance Vs. Drain Current 4.25 410 -TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 8 035 & 0.90 = S By 088 oa > = 98 O75 60 40 -20 0 27 400 600100 #20 140 Ty, JUNCTION TEMPERATURE Pct Fig. 8 Breakdown Voltage Vs. Temperature = f= 1 MHz Ging * Cyt Cot, Cay < tw s + 3 Can ae Ge : = oigt ge < 3 3 oe 4 10 Fs | a Co ) Vg. ORAIM-TO-SOUACE VOLTAGE (VOLTS) Fig. 10 Typical Capacitance V1. Drain-to-Source Voltage . memes -- Rgs(on). ORAIN-TO-SOUACE ON STATE RESISTANCE (NORMALIZED) B % IRFF110, (RFF111, IRFF112, IRFF113 Sop. REVERSE DRAIN CURRENT (AMPERES) a1 Q 02 04 06 08 10 #12 4 16 $B 26 V5q, SOURCE TO ORAIN VOLTAGE {VOLTS} Fig. 7 Typical Source-Drain Diode Forward Voltage 075 1.54 025 6 4 40 -20 8 OM 4 60 8 100 120 140 Ty JUNCTION TEMPERATURE (C) Fig. Normalized On-Resistance Vs. Temperature a Vs. GATE-TO SOURCE VOLTAGE (VOLTS} on & Ip" BA TEST CIRCUIT FIGURE 18 8 2 4 6 8 0 Q,, TOTAL GATE CHARGE {nC} Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voitage 195 0210 A-09G E SOLID STATE Standard Power MOSFETs OL DEM 3475081 9018253 5 7-29-07 IRFF110, IRFF111, IRFF112, IRFF113 TRITIAL Ty = 259C. (HEATING Is 2 an Psion). ORAIN-TOSOUACE ON RESISTANCE (OHMS) 8 5 10 w tg. ORAIN CURRENT (AMPERES) Fig. 12 Typical On-Resistance Vs. Drain Current Pp. POWER DISSIPATION (WATTS) 3s a a 20 we Jp. DRAIN CURRENT (AMPERES} Q 2 6 $0 125 150 5 Te. CASE TEMPERATURE (9C} Fig. 13 Maximum Drain Current Ve. Case Temperature a Co) a 100 wo 14 Te. CASE TEMPERATURE (C) Fig. 14 Power Vs. Temperature Derating Curve VARY ty TOQRTAIN REQUIRED PEAK Uy vee our & Fig. 15 Clamped Inductive Test Circuit AOJUST fy - 10 OBTAIN SPECIFIED Ip y, PULSE GENERATOR r Fig. 17 Switching Time Test Cireuit 196 __ - To Ey 058V 055 Ve * 0 158vo5 Vos 0 USOLATED SUPPLY] SAME TYPE 1g to CURRENT = CURRENT SHUNT SHUNT Fig. 18 Gate Charge Test Circuit O21L