SYMBOLS & CODES EXPLAINED j p 7 e 4 . { i a i ( i . . [A G n LINE TYPE [DEVICE Vp. BVdss (BVgss _| \ass Igss@ ND] COMMON SOURCE/ Rds | MAX. | IN STRUC|Y200 (EO No. No. [DISS @ | | Id Ig |Vgs=0O8 we pi Vgs /Vds gfs Yos Cis FREE |MAX|-TURE | s/a jAD @25C |ld=0 |Vds | Vds>Vp!& mhos. AIR [TEMP T0200/D E w) | (vy | ty) Vv} | tA) | A A Vv MAX ee C Ser. v- Matched Type, also listed in STRUCTURE Section 13, Category 6 A typical afg D ~ Diffused @ Phototransistor, also listed in Pulsed E Epitaxial tooe bonr ae ; % High Frequency (Yes) Ge GermaniumPE 5 (i- Yes PE Planar Epitaxial PL Planar eet tg: . # Junction Type A With infinite heat sink A_y - Y, * Insulated Gate (MOS Type) T Above 28C; For additional is 9 _ Matched pair or dual information, consult manufacturer. + Not at given test conditions A Switching, other uses % Maximum Zw Chopper, Other uses + * Pulsed D Noise figure 8db or below VgglCut off} mi fT = Plastic Package A. Vogt Threshold) Vv H Hometaxial % Typical % Maximum $ Tetrode # Mini A Not given at test conditions % Insulated Gate (MNOS Type} - imimum R [_# = Mini T Rosion) # Vps * A Depletion Mode, Type A $ Depletion-Enhancement Mode, Type B x Enhancement Mode, Type C a A - BYv T- sv bso DSX A pss @ Ves = Qand Vos Vp Ves 790 Minimum Typical Pulsed ON e+ P+ , (Output Shorted) Not given at test conditions Typical Cass Cag0 g-c igs JJunction $Storage AAmbient CCase A Phototransistor Device A Tetrode Device % Composite Type BYngo ! Lo mE al ks esaleain M wa Re aay alg we TYPE No. fT - 40 # g0c * 45C $ 100c # 50 D Free Air Zz 60C y Typical Vatue 75C A- > 100C Symbols indicate temperature at which derating starts. A Q With infinite heat sink Following symbols indicate temp W Power at which derating starts: Output f- 40% (- ec % gor * 45C ~- 70C A Pulsed #- 50% $$ - 100C %_ min * 0-65C A Ambient @ 70-80 C Case # 85-100C J Junction # 110-125C S Storage 130-135C ~ 140-165C 170-200C v Over 200C D - te . $ Minimum # Pulsed or Peak a T At temperature 25C Case D- 1, # Pulsed $ Minimum aE t sraucly indicated Maximum tyt % * Ton t, # ~ ts QD ~ AtVog < Max. Veg (see mfr. spec.) FT - ttt * Tote # Icex ky A - rs * = Ton * Toft 1 cer CEO) CES @ AtTemp. 25C Case Vv Typical Value # Pulsed $ Typical tT AtTemp. > 25C # Rated max. operating frequency f # BV __ or punch-through t <b x a Gain bandwidth product (ft) Q- BV ces * Pulsed A- 1 * Maximum frequency of oscillation g BV BVsoisus) B-1 Q Figure of merit (frequency for CER $ Minimum B unity power gain) op A Minimum Z- Maximum 7 At Temp. 25C Case fon a $ Minimum ~~ "fe * ~ Available to # Pulsed selected range $ ~ Tetrode Typical narrower than # Radiation Resistant Device (Also see top of reverse side of card.)IN ORDER OF (1) MIN. DERATING FACTOR TYPE | ceo |icbo @ fae | MAX.| tr EO No. SAT. -TURE | s/a jAD RES. TO200/D E 153-26t . : : 866m |3.0ud MT58 154-241 : : : : 833m |3.0ug MT58 15 : : : : 833m |3.0ud MT58 DTS105t : : : : : 180m |550n |DM |TO3 DTS108 : : : 150m |550n |DMA |T03_ [cg DTS3704B : : 0 |. 1.6 TO41 DTS3705B : : : 80 TO3 SDT2111 : : MT41a SDT2151 : : R121 2N1016C/M_ |1. * : : : : : MT1 151-241 : ; : : : : MTt 152-24t MT1 1776-04401 1. : ( TO63 A AMF227 : * . 5 . MT1 AMF227C : * : : : MT1 AMF2288 : : : MT1 AMF229A : : : : : MT1 BSC1015 : * : . : MT1 BSC 1016 : : : : : MT1 SDT2205 : f ; ; J MT23 SEC 1478 : : : : MT STC1015 : . ; . . : 2.5Mt MT1 STC1015C : : : ; 2.5Mt MTt STC1016 : : : : : 2.5Mt MT1 STC 1016C : : : : : 2.5Mt MT STC 1400 : : , . . : : 25Mt |1. MTt STX5/5010 : : 5.0 10Mt STX5/6025 : : : 5.0 10Mt 1561A603 : 120 @ . : : 3.0 800 5A |330m 2N1421 : 30 Z . 0B | 1.0 10M5A|3.0 L10B : 200 6.0 | 10 500k |.10 L20A : 200 : 6.0 | 20 500k |.10 L20D : 200 : 6.0 | 20 500k |.10 L30c : 200 : 6.0 | 30 500k ].10 $DT1908 : 140% es : 2. 50 340k5 $DT2008 : 140G les 2.0% | 50 340k SYMBOLS AND CODES 109 D.A.T.A. EXPLAINED IN INTERPRETER 109b> CQew + LINE No. Vv - - #- SYMBOLS & CODES COMMON TO MORE THAN ONE TECH New Type Revised Specifications Non-JEDEC type manufactured outside U'S.A. TYPE No. SYMBOLS & CODES EXPLAINED Switching type, also listed in Section 12 Chopper, also listed in Section 13, Category 10 These types also included elsewhere with other characteristics. See Type No. Cross Index for alternate line number. Radiation Resistant Devices, also listed in Section 13, Category 13. ICAL SECTION wo fa, Gain bandwidth product (f-) Maximum frequency of oscillation Figure of merit (frequency for unity power gain) Minimum Maximum I Charge storage time constant Stored base charge picocoulomb Total switching time Ton = t + ty Typical Value ee Tort = ts + ty Typical Value Ton + Tote =td+ tr + tf + ts LINE No. TYPE No. [2] RISE [DELAY TIME | TIME STRUCTURE (Atl Sections A Alloy Except 6 & 7} AN Annular D Diffused or drift DM - Diffused mesa E Epitaxial EA -~ Epitaxial annular EM Epitaxial mesa F Fused G Grown GA Gallium Arsenide H Hometaxial MA -- Mico alloy MD Micro alloy diffused ME - Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alloy diffused PE Planar epitaxial PL Planar s Surface barrier to Matched pair ~ Switching, other uses Chopper, other uses Noise figure 8db or below Plastic package ~ Overlay * THESE TYPES ALSO INCLUDED ELSEWHERE WITH OTHER CHARACTERISTICS SEE TYPE NO. CROSS INDEX FOR ADDITIONAL PAGE & LINE NO. Pulsed Minimum Maximum Available to selected range narrower than indicated - Yes in millimho (FETs only). Bias values are Vos & 'b . | Cob SAT. xX Tt - "bp rbb PP +him vw 24 NP Cob |N-NPN i A|TEMP: T OWG. No. ormr moo Ge Germanium Si Siticon Tetrode NPN or N Channel PNP or P Channel Field Effect Transistor Radiation Resistant Device (See above also) D With infinite heat sink Following symbols indicate temperature at which derating starts: f - 40c 70 * ~ 45C $- 100C or greater # 50C @ 80C ~ 60C A- Pulsed A ~- Maximum $ ~ Cob - Ron (FETs only) # Pulsed - Coes (FET's only} SISTORS A Ambient Cc Case J Junction Ss Storage DESCRIPTION a 1 Avalanche Mode 10 - 2 Bi-directional 11 - Unmatched Ge Germanium 3 Field Effect Composite (Dual) Si Silicon 4 Hook Collector 12 Cryogenic 5 ~ Complementary 13 Radiation Symmetry (PNP & Resistant Devices NPN) Matched Pair 14 Pressure Sensitive N -~ NPN or N Channel See TECHNICAL TERM DEFINITIONS Section | 6 Matched Pair 15 Transistor chips P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)IN ORDER OF (1) fab, (2) MAX RISE TIME & RISE DELAY| STORE| FALL |IN FREE . | Cob rbb |STRUCTURE|M|MAX.|Y200 [EO TIME ; TIME | TIME | TIME | AIR @ | Veb X |P-PNP A|TEMP! s/a AD tr td ts tf 25C Cob |N-NPN T T0200 |DE 113 B170022 151-26 152-24 152-30 B 170026 MP1536 2N5579 MP 1530 MP1533 2N1821 2N1834 2N2128 MP900 B113003 2N463 MP1536A MP1530A 2N2535 MP1550A MP1553A MP1556A MP1559A BUY27 CST1773B MP5692 MP5695 580-0402 580-0802 580-1202 A580-1602 A5 80-1802 580-2002 580-2202 580-2402 ASZ 161 2N2343 6000n 7.0ud 7.0ugd 7.0ud 8000n 8000ne 10ug 10ud 10ud 20ug 20ud 20ud 25u u 30u 4.0ktA | 4.6ut 5.0ktA |8000nd 5.0ktA 10ud B.0kA 12u 10kt |5000nd 10kt 10ug 10kt 10uS 10kt 10ud 10k8 20u (Ot5M = |2500n 200k5A |} 20u 200k8A | 20u 250k8A | 10u 250k8A | 10u 250k6A | 10u 250k8A | 10 250k8A | 10u 250kK8A | 10u 250k8A | 10u 250k8A | 10u 25M 350ktA D.A.T.A. 400n 2.5u 2.0u 5.0u 5.0u 5.0u 3.0u 300n _ 2.0u 8.0u 4.0u 4.0u 4.0u 4.0u 4.0u 1.0u 14 25u u 25u u 25u 60u 400n 15u u 15u 908 |40 100 Ze |4.0 100 De 100 Be 120 90 150 $ 90 g 90 Z 250 250 250 250 3.5 3.0 Z 40 Z% 3.0 D 3.0 D 15 25m m 20m m 70D 10 G|100 2.0 27 3.0% | 35 3.0 Z| 20 15 @ 10ud SYMBOLS AND CODES N-DM Si N-F Si N-F Si N-F EXPLAINED IN INTERPRETER TO3 MT1 MT1 MT1 TO3 T041 MD37 1041 TO41 TO49 TO49 TO83 X71 TO3 113