December 1998 NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control. -7.5 A, -30 V. RDS(ON) = 0.030 @ VGS = -10 V RDS(ON) = 0.045 @ VGS = -4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ______________________________________________________________________________ D G Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current D D S - Continuous (Note 1a) Maximum Power Dissipation NDT456P Units -30 V 20 V 7.5 A 20 (Note 1a) 3 (Note 1b) 1.3 (Note 1c) TJ,TSTG S TA = 25C unless otherwise noted - Pulsed PD G Operating and Storage Temperature Range W 1.1 -65 to 150 C THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 C/W RJC Thermal Resistance, Junction-to-Case (Note 1) 12 C/W (c) 1998 Fairchild Semiconductor Corporation NDT456P Rev. F Electrical Characteristics (T Symbol A = 25C unless otherwise noted) Parameter Conditions Min -30 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A IDSS Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V V TJ = 55C -1 A -10 A IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA -3 V ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = - 250 A RDS(ON) Static Drain-Source On-Resistance VGS = -10 V, ID = -7.5 A -1 TJ = 125C -0.5 TJ = 125C VGS = - 4.5 V, ID = -6 A -1.5 -1.1 -2.6 0.026 0.03 0.035 0.054 0.041 0.045 ID(on) On-State Drain Current VGS = -10 V , VDS = - 5 V -20 A VGS = -4.5 V, VDS = - 5 V -10 Gfs Forward Transconductance VGS = -10 V, ID = -7.5 A 13 S VDS = -15 V, VGS = 0 V, f = 1.0 MHz 1440 pF 905 pF 355 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -15 V, ID = -7 A, VGEN = -10 V, RGEN = 12 VDS = -10 V, ID = -7.5 A, VGS = -10 V 10 20 ns 65 120 ns 70 130 ns 70 130 ns 47 67 nC 5 nC 12 nC NDT456P Rev. F Electrical Characteristics (T Symbol A = 25C unless otherwise noted) Parameter Conditions Min Typ Max Units -2.5 A -1.2 V 140 ns DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = - 2.5 A trr Reverse Recovery Time VGS = 0 V, IF = - 2.5 A dIF/dt = 100 A/s Notes: 1. P D (t) = T J -T A R JA (t) = T J -T A R JC +R CA (t) = I 2D (t) x R DS(ON)@T J - 0.85 (Note 2) RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is defined by users. For general reference: Applications on 4.5"x5" FR-4 PCB under still air environment, typical RJA is found to be: a. 42oC when mounted on a 1 in2 pad of 2oz copper. b. 95oC when mounted on a 0.066in2 pad of 2oz copper. c. 110oC/W when mounted on a 0.00123in2 pad of 2oz copper. 1a 1b 1c Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. NDT456P Rev. F Typical Electrical Characteristics -6.0 -5.0 -3.5 R DS(on) , NORMALIZED -16 2.5 -4.5 -4.0 VGS = -10V -12 -3.0 -8 -4 -2.5 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) -20 0 0 -1 V DS -2 V GS=-3.5V 2 -4.0 -4.5 1.5 -7.0 0.5 -3 0 -4 -8 , DRAIN-SOURCE VOLTAGE (V) -20 V R DS(on) , NORMALIZED 1 .2 5 = -10V GS 1 0 .7 5 DRAIN-SOURCE ON-RESISTANCE 2.5 0 .5 -50 VGS = -10V 2 25C 1 -55C 0.5 0 -25 0 25 50 75 100 T , JUNCTION TEMPERATURE (C) 125 TJ = 125C 1.5 150 0 -4 -8 -12 -16 -20 I D , DRAIN CURRENT (A) J Figure 4. On-Resistance Variation with Drain Current and Temperature. Figure 3. On-Resistance Variation with Temperature. T = -55C 25 J VDS =- 10V 125 V GS(th) , NORMALIZED -16 -12 D -8 -4 0 -0.8 -1.6 V GS -2.4 -3.2 , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. -4 GATE-SOURCE THRESHOLD VOLTAGE 1.2 -20 , DRAIN CURRENT (A) -16 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. I D =-7.5A I -12 I D , DRAIN CURRENT (A) 1 .5 R DS(ON), NORMALIZED -10 1 Figure 1. On-Region Characteristics. DRAIN-SOURCE ON-RESISTANCE -5.0 VDS = VGS I D =- 250A 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 T , JUNCTION TEM PERATURE (C) 125 150 J Figure 6. Gate Threshold Variation with Temperature. NDT456P Rev. F Typical Electrical Characteristics 20 -IS , REVERSE DRAIN CURRENT (A) BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 1 .1 I D =- 250A 1 .0 8 1 .0 6 1 .0 4 1 .0 2 1 0 .9 8 0 .9 6 0 .9 4 -5 0 -2 5 0 T J 25 50 75 100 , JU N CTION T EM PERA T U RE (C) 125 150 V GS = 0V 5 -55C 0.01 0.001 0.0001 0 0.2 -V SD 0.4 10 -VGS , GATE-SOURCE VOLTAGE (V) 3000 2000 Ciss Coss 1000 Crss 300 f = 1 MHz VGS = 0V 200 0.1 0.2 0.5 1 2 5 10 20 30 8 R GEN 6 4 2 0 0 10 20 30 40 50 60 Figure 10. Gate Charge Characteristics. t on t d(on) RL t off tr t d(off) tf 90% 90% V OUT VOUT DUT G 1.2 -20V -VDD D 1 Q g , GATE CHARGE (nC) Figure 9. Capacitance Characteristics. V IN 0.8 VDS =- 5V -10V I D = -7.5A VDS , DRAIN TO SOURCE VOLTAGE (V) VGS 0.6 , BODY DIODE FORWARD VOLTAGE (V) Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 4000 CAPACITANCE (pF) 25C 0.1 Figure 7. Breakdown Voltage Variation with Temperature. 500 400 TJ = 125C 1 10% 10% 90% S V IN 50% 50% 10% PULSE W IDTH Figure 11. Switching Test Circuit. INVERTED Figure 12. Switching Waveforms. NDT456P Rev. F 3 .5 18 STEADY-STATE POWER DISSIPATION (W) VDS = -5V TJ = -55C 15 25C 12 125C 9 6 3 g FS , TRANSCONDUCTANCE (SIEMENS) Typical Thermal Characteristics 0 0 -2 -4 -6 -8 1a 3 2 .5 2 1 .5 1b 1c 1 4.5"x5" FR-4 Board o TA = 25 C Still Air 0 .5 0 -10 0 .2 0 .4 0 .6 0 .8 2 o z COPPER M O U N T ING PAD AREA (in 2 ) 1 Figure 13. Transconductance Variation with Drain Current and Temperature. Figure 14. SOT-223 Maximum Steady-State Power Dissipation versus Copper Mounting Pad Area. 10 40 20 8 1a 6 1b 1c 4 4.5"x5" FR-4 Board o TA = 25 C Still Air VGS = -10V 2 0 0 0.2 0.4 0.6 0.8 -ID , DRAIN CURRENT (A) -ID , STEADY-STATE DRAIN CURRENT (A) I D, DRAIN CURRENT (A) 10 R N) LIM IT 10m s 100 ms 1s 10s DC 1 0.3 0.1 VGS = -10V SINGLE PULSE RJA = See Note 1c TA = 25C 0.01 0.1 0.2 0.5 2oz COPPER MOUNTING PAD AREA (in2 ) Figure 15. Maximum Steady-State Drain Current versus Copper Mounting Pad Area. 100 us 1m s 3 0.03 1 (O DS 1 2 5 10 30 50 - VDS , DRAIN-SOURCE VOLTAGE (V) Figure 16. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0 .5 D = 0.5 0 .2 0 .2 0 .1 0 .1 0 .05 0 .0 5 0 .02 0 .0 2 0 .01 R (t) = r(t) * R JA JA R JA = See Note 1 c P(p k) 0 .0 1 t1 0 .0 0 5 Single Pulse 0 .0 0 2 0 .0 0 1 0 .0 0 0 1 t2 TJ - TA = P * R JA (t) Duty Cycle, D = t 1 / t 2 0 .0 0 1 0 .01 0 .1 t 1 , TIM E (sec) 1 10 100 300 Figure 17. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. NDT456P Rev. F TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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