Philips Semiconductors Product Specification eee ee eeeec eee eneee cece eee ncn eee ee as PowerMOS transistor BUK456-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL | PARAMETER MAX. } MAX. | UNIT field-effect power transistor in.a - - plastic envelope. BUK456 -800A | -800B The device is intended for use in Vos Drain-source voitage 800 800 V Switched Mode Power Supplies lp Drain current (DC) 4 3.5 A (SMPS), moter control, welding, Prot Total power dissipation 125 125 Ww DC/DC and AC/DC converters, and Rosiony Drain-source on-state 3 4 Q in general purpose switching resistance applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d 1 gate / ~ a _ 2 {drain fi \ g_\l 44 / 3. |source NI tab |drain | s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL |PARAMETER CONDITIONS MIN. MAX. UNIT Vos Drain-source voltage : - 800 Vv Voor Drain-gate voltage Res = 20 kQ - 800 Vv Ves Gate-source voltage - - 30 Vv -B00A -800B tb Drain current te Tb = 25C - 4.0 3.5 A lp Drain current (DC) Timp = 100 C - 2.5 2.2 A lon Drain current (pulse peak value) |T, = 25 C - 16 14 A Prot Total power dissipation Tp = -25 C - 125 Ww stg Storage temperature - - 55 150 C jl Junction Temperature - : 150 C THERMAL RESISTANCES SYMBOL |PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Ris james Thermal resistance junction to - - 1.0 | K/W mounting base Rin pa Thermal resistance junction to - 60 - KAY ambient May 1995 719 Rev 1.200Philips Semiconductors Product Specification PowerMOS transistor BUK456-800A/B STATIC CHARACTERISTICS Tw = 25 C unless otherwise specified SYMBOL | PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Viseyoss Drain-source breakdown Ves = 0 V3 Ip = 0.25 MA 800 - - Vv voltage Vesiro Gate threshold voltage Vos = Vegi Ip = 1 MA 2.1 3.0 4.0 Vv loss Zero gate voltage drain current | Vos = 800 V; Veg = 0 V; T, = 25 C - 2 20 HA loss Zero gate voltage drain current | Vp, = 800-V; Veg = 0 V; T, =125 C - | 1.0 mA less Gate source leakage current Veg = 80 V; Vog = OV - 10 100 nA Rosron) Drain-source on-state Veg = 10 V; BUK456-800A - 2.7 3.0 Q resistance Ib=tba BUK456-800B | - 3.5 4.0 Q DYNAMIC CHARACTERISTICS Tap = 25 C unless otherwise specified SYMBOL |PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Os Forward transconductance Vpp = 25 Vi b= 1.5A 3.0 4.3 - S Cics Input capacitance , Vos = OV; Vog = 25 Vi f = 1 MHz - 1000 | 1250 |] pF Coss Output capacitance - 80 120 pF iss Feedback capacitance - 30 50 pF ty on Turn-on delay time Vop = 30 V3 1, = 2.3 A; - 10 25 ns t. Turn-on rise time Ves = 10 V; Res = 50 9; - 50 70 ns ta off Turn-off delay time Rogen = 80 2 - 130 | 150 ns t, Turn-off fall time - 40 60 ns Ly Internal drain inductance Measured from contact screw on : 3.5 - nH tab to centre of die Ly internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die L, Internal source inductance Measured from source lead 6 mm - 7.5 - nH from package to source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tmo = 25 C unless otherwise specified SYMBOL |PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT lor Continuous reverse drain - - - 4.0 current loam Pulsed reverse drain current - - - 16 A Vep Diode forward voltage =40A;Ve,=0V - 1.0 1.3 Vv te Reverse recovery time i; = 4.0.A; -di./dt = 100 A/us; - 1800 - ns + Reverse recovery charge Veg = OV; Va = 100 V - 12 - pc May 1995 720 Rev 1.200Philips Semiconductors PowerMOS transistor Product Specification BUK456-800A/B Normalised Power 0 20 40 60 80, 100 120 6140 Tmb/ C Fig.1. Normalised power dissipation. PD% = 100-Po/Pp as c= F(T) 6.07 Toe 0.001 + : na = 1E-05 1E-03 1E-01 t/s Fig.4. Transient thermal impedance. Zin jmp = 1D); parameter D = t,/T 1E+01 Normalised Current 120 110 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 700 #200140 Tmbi"C Fig.2._ Normalised continuous drain current. ID% = 100-Ip/Ip 05 - = F(T}; Conditions: Veg 2 10 V 0 4 8 12 16 20 24 28 VDS/V Fig.5. Typical output characteristics, T; = 25 C. fy = (Vp); parameter Vag ID/A 00 1a 100 1000 vos;v Fig.3. Safe operating area. T,,, = 25 C Ip. & low = f(Vos); low Single pulse; parameter t, a RPDS(ON) / Ohm oO 2 4 6 ID/A Typical on-state resistance, T, = 25 C. Fosiom = (lp); parameter Ves Fig.6. May 1995 721 Rev 1.200Philips Semiconductors PowerMOS transistor Product Specification BUK456-800A/B ID/A 8 Aa oO 2 4 6 & 10 VGS/V Fig.7. Typical transfer characteristics. In = f(Ves) ; conditions: Vp, = 25 V; parameter T, 0 -40 -20 0 20 40 e 60 80 100 120 140 Tj - Fig.10. Gate threshold voltage. Vaso) = 1(T); conditions: I = 1 MA; Vos = Vag Q 2 4 6 8 ID/A Fig.8. Typical transconductance, T, =25 C. 9is = F(lp); conditions: Vp, = 25 V Fig.11. Sub-threshold drain current. Ip = t(Vagy Conditions: T, = 25 C; Vos = Vas a Normatised RDS(ON) = {{(Tj) Q -60 -40 -20 0 20 40 60 80 100 120 140 m/s Fig.9. Normalised drain-source on-state resistance. a= Foston/Rosronpes c= t T)): p= 1.5 A; Vas =10V 0 20 40 VDS/V Fig.12. Typical capacitances, Cis, Coss, C, iss? OSS? rss" C = f(Vo5); conditions: Vag = 0 V; f= 1 MHz May 1995 722 Rev 1.200Philips Semiconductors Product Specification PowerMOS transistor BUK456-800A/B VGS/V IF/A 12 8 10 0 Q 26 40 0 1 2 QG inc VSDS/V Fig.13. Typical turn-on gate-charge characteristics. Fig.14. Typical reverse diode current. Ves = f(Q,); conditions: [, = 4 A; parameter Vp, I; = f(Vsps); conditions: Vag= 0 V; parameter T, May 1995 723 Rev 1.200