SOT23 NPN SILICON PLANAR BCW65
MEDIUM POWER TRANSISTORS BCW66
ISSUE 3- AUGUST 1995 I I
PARTMARKING DETAILS -(f
BCW65A -EA BCW65A13 -4V
BCW65B -EB BCW65BR -5V
BCW65C -EC BCW65CR -6V
BCW66F -EF BCW66FR -7P
BCW66G -EG BCW66GF -5T
BCW66H -EH BCW66HF -7M
COMPLEMENTARY TYPES -SOT23
BCW65 -BCW67
BCW66 -BCW68
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL BCW65 BCW66 UNIT
——..—- ..—
Collector-Base Voltage v-
CBO 60 75 v
Collector-Emitter Voltage ‘CEO 32 45 ‘“ v
—.
Emitter-Base Voltage vEBO 5v
——
Continuous Collector Current .—. -
Ic 800 mA
——— .—
Peak Collector Current(l Ores) ‘CM 1000 mA
-..—-—
Base Current IB 100 mA
Power Dissipation at T,mb=250C ——
P101 330 mW
Operating and Storage Temperature Range ——-—
~Tj:T=g !-55 to +150 ‘“ “c
3-27
BCW65
BCW66
;LECTRICAL CHARACTERISTICS (at Tal
3
Breakdown Voltage
BCW65 V(B~)m~
BCW66
-“
Emitter-Bese Breakdown Voltage
BCW66 I
Emitter-Base Cut-Off Current Iho
Collector-Emitter Saturation Voltage VcE(~m)
Base-Emitter Saturation Voltage ‘EIE(SAT)
Static BCW65A hFE
Forward BCW66F
Current
Transfer
BCW65B h~~
BCW66G
m-
BCW65C hFE
BCW66H
Transition Frequency fT
e’
Collector-Base Capacitance
Switching times:
rum-On Time t
Furn-Off Time t;
b= 25°C unless othenvise stated).
MIN. TYP. MAX. UNIT CONDITIONS.
32 v;cE&lOmA
$5 ~E&lOmA
30 vlc=lo@
75 l~loyA
5 v IEBO=lOKA
20 nA Vc-s= 32V
20 pA VcEs. 32V ,Tti.lEO%
20 nA VCES=45V
20 @VcE~. 45V ,T@.150W
20 nA VEBO=4V
0,3 v&loomA. la.lomA
0.7 v1~ 5C0rnA. la.50MA*
2 v lc=500mA, la=50mA”
35 Ic=loo@, VCE=1OV
75 Ic= 10mA, Vc. =lV
100 160 250 lc=l OOmA, VCE=IV*
35 lc=500mA, VCE=2V*
80
180
250
100
50 I&loo@, VCE.1OV
110 $= 10mA, VCE=IV
160 250 400 l&l OOmA, VCE. IV”
60 lF500mA, VCE. 2V*
$=1 OOPA, VCE.1 Ov
$= 10mA, VCE= lV
350 630 l&lOOmA, VCE=IV*
l~500mA, VCE. 2V*
100 MHz Ic =20mA, VCE=1OV
f.100MHz
8 12 pF Vcao=l OV, f=1MHz
80 pF VEao=0.5V, f=lMHz
210 dB I& 0.2mA, VCE. 5V
RG=lkf2
100 ns lc=150mA
400 ns &la2=15mA
RL=150Q
;pice parameter data is available upon request for this device
‘Measured under pulsed conditions. Pulse width= 300ks. Duty cycle <2%
3-28